SI5402DC Search Results

Si5402DC

Contextual Info: Si5402DC Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.035 at VGS = 10 V ± 6.7 0.055 at VGS = 4.5 V ± 5.3 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Compliant to RoHS Directive 2002/95/EC

Si5402DC

Contextual Info: Click Here & Upgrade PDF Complete Expanded Features Unlimited Pages Documents SPICE Device Model Si5402DC Vishay Siliconix N-Channel 2.5-V G-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application

SI5402DC

Contextual Info: Si5402DC New Product Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.035 @ VGS = 10 V "6.7 0.055 @ VGS = 4.5 V "5.3 D 1206-8 ChipFET 1 D D D D D D G G Marking Code S AA XX Lot Traceability and Date Code S Part # Code

Si5402DC

Contextual Info: SPICE Device Model Si5402DC Vishay Siliconix N-Channel 2.5-V G-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

SI5402DC

Contextual Info: Si5402DC Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.035 @ VGS = 10 V "6.7 0.055 @ VGS = 4.5 V "5.3 D 1206-8 ChipFETt 1 D D D D D D G G S Marking Code AA XX Lot Traceability and Date Code S Part # Code Bottom View

S 71062

Abstract: Si5402DC MARKING CODE AA S9926
Contextual Info: Si5402DC New Product Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.035 @ VGS = 10 V "6.7 0.055 @ VGS = 4.5 V "5.3 D 1206-8 ChipFET 1 D D D D D D G G S Marking Code AA XX Lot Traceability and Date Code S Part # Code

MARKING CODE AA

Abstract: Si5402DC Vishay DaTE CODE 1206-8 Si5402DC-T1
Contextual Info: Si5402DC Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A) 0.035 @ VGS = 10 V 6.7 0.055 @ VGS = 4.5 V 5.3 D 1206-8 ChipFETt 1 D D D D D D G G S Marking Code AA XX Lot Traceability and Date Code S Part # Code

MARKING CODE AA

Abstract: Vishay DaTE CODE 1206-8 AN811 AA MARKING CODE SO8
Contextual Info: Si5402DC Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.035 at VGS = 10 V ± 6.7 0.055 at VGS = 4.5 V ± 5.3 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Compliant to RoHS Directive 2002/95/EC

Contextual Info: Si5402DC Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.035 at VGS = 10 V ± 6.7 0.055 at VGS = 4.5 V ± 5.3 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Compliant to RoHS Directive 2002/95/EC

SI5402DC

Contextual Info: Si5402DC Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.035 at VGS = 10 V ± 6.7 0.055 at VGS = 4.5 V ± 5.3 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Compliant to RoHS Directive 2002/95/EC

Si5402DC

Abstract: Si5402DC-T1
Contextual Info: Si5402DC Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.035 @ VGS = 10 V "6.7 0.055 @ VGS = 4.5 V "5.3 D 1206-8 ChipFETt 1 D D D D D D G G S Marking Code AA XX Lot Traceability and Date Code S Part # Code Bottom View

Si5402DC

Contextual Info: Click Here & Upgrade PDF Complete Expanded Features Unlimited Pages Documents SPICE Device Model Si5402DC Vishay Siliconix N-Channel 2.5-V G-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application

Si5402DC

Abstract: Si5402BDC Si5402DC-T1 74062 SI5402BDC-T1-E3
Contextual Info: Specification Comparison Vishay Siliconix Si5402BDC vs. Si5402DC Description: Package: Pin Out: N-Channel, 30-V D-S MOSFET 1206-8 ChipFET Identical Part Number Replacements: Si5402BDC-T1-E3 Replaces Si5402DC-T1-E3 Si5402BDC-T1-E3 Replaces Si5402DC-T1 Summary of Performance:

Si5402DC

Abstract: Si5402DC-T1 Si5402BDC
Contextual Info: Specification Comparison Vishay Siliconix Si5402BDC vs. Si5402DC Description: N-Channel, 30 V D-S MOSFET Package: 1206-8 ChipFET Pin Out: Identical Part Number Replacements: Si5402BDC-T1-E3 Replaces Si5402DC-T1-E3 Si5402BDC-T1 Replaces Si5402DC-T1 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

fqp60n06

Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
Contextual Info: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier

quanta

Abstract: T517 BD LM393 rs200m ATI RS200 ENE1420 lp832 t197 RS200MP Quanta MK2
Contextual Info: 1 2 3 4 5 6 7 8 01 MK2 MLB A A Rev. 1A B C D 01 02 03 04 05 Title Block Diagram Northwood CPU-1 Northwood CPU-2 RS200M-AGTL+ 31 32 33 34 35 Parallel Port Serial Port USB Connector PCU NS 87570 87570 Expansion,LED,SWs 06 07 08 09 10 RS200M-DDR I/F RS200M-PCI & AGP I/F

963L-2

Abstract: 760GX quanta SiS302ELV LM393 VDD63 nec pc123 quanta BL RTM360 MCL F 108 T4-1
Contextual Info: 1 2 3 KH2 MLB 4 5 6 7 8 01 CPU Thermal AMD Athlon 64 Block Diagram Thermal sensor & Fan SMT uPGA754 A A 1.6G MB/s DDR 2700MB/s 166MHz Memory CRT CRT DDC2B 1x D-SUB 15-Pin NB Local Frame Buffer SISM760 DDR 2700MB/s (166MHz) LVDS Transmitter VB 12bit LCD LVDS

kb3926

Abstract: kb3926 d3 MAX8774 MCP67D Maxim MAX8774 kb3920 short stop 12v p18 30a kb3926 d2 ac30 c51 100v 10p quanta at1
Contextual Info: 1 2 PCB STACK UP LAYER 2 : SGND1 PG 36,37 BATT CHARGER LAYER 3 : IN1 LAYER 4 : IN2 DDRII-SODIMM1 LAYER 5 : VCC 4 AC/BATT CONNECTOR RUN POWER SW LAYER 1 : TOP A 3 5 6 PG 34 PG 38 DC/DC +3VSUS +5VSUS DDRII 667mhz LAYER 7 : SGND2 A PG 33 AMD Socket S1 638P DDRII-SODIMM2

M7602

Abstract: VDDIO10 RTM360-755R 963L-2 M760LV rtm360 MAX1632AEAI nec pc123 quanta quanta computer
Contextual Info: 1 2 3 KH1 MLB 4 5 6 7 8 01 CPU Thermal AMD Athlon 64 Block Diagram Thermal sensor & Fan SMT uPGA754 A A 1.6G MB/s DDR 2700MB/s 166MHz Memory CRT CRT DDC2B 1x D-SUB 15-Pin NB Local Frame Buffer SISM760 DDR 2700MB/s (166MHz) LVDS Transmitter VB 12bit LCD LVDS

NTC R29

Abstract: AMP-787441-1 AMP-74 NCP21XV103J03RA 35CV10AX 2N7002-SOT23 8.4v battery charger taiyo yuden date code 919AS-220M ntc 10k 10% D5
Contextual Info: QUICK START GUIDE FOR DEMONSTRATION CIRCUIT 495 2 CELL LI-ION BATTERY CHARGER WITH CHARGE TERMINATION LTC4006 DESCRIPTION Demonstration circuit 495 is a single battery stand-alone battery charge controller with built in charge termination featuring the LTC 4006. The input voltage is 9 to 20V. The

hcl l54

Abstract: t538 LM3935 TXC7A dr3 c502 7A14300038 T596 quanta b30 c300 - 1 South Bridge ALI M1535
Contextual Info: 5 4 3 2 1 Model MODEL REV MK3 M/B BOARD 1A 2A CHANGE LIST MK3 M/B BOARD Page FM 1 1A 2 3A PAGE 8 Layout change add R420,R423 for U25 OSC32K,Y3 BOM del 3 3B PAGE11 Layout change add C648 for HWPG,U5 and TC1&D2 BOM del First Release PAGE 2 Layout change add U37,R411,R412,R413,R414,R415,C647 for AMD recommand

VN10KLS

Abstract: mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05
Contextual Info: Power MOSFET Selector Guide Vishay Siliconix LITTLE FOOT Plusä ä Schottky Name Channel Configuration VDS V rDS(on) @ 10.0V rDS(on) @ 4.5V rDS(on) @ 3.3V rDS(on) @ 2.5V rDS(on) @ 1.8V ID (A) Max. Qg (nC) Typ. PD (W) Max. SO-8 Si4831DY P Single Plus Integrated

sis 962l

Abstract: SIS 650 quanta C945 p 331 NBR12 LM393 PV14 schematic diagram 302ELV NBC107 sis962l
Contextual Info: 1 2 3 VM5 MLB 4 5 CPU 7 8 01 Thermal INTEL P4 SOCKET-478 Block Diagram 6 T h e r m al sensor & Fan A A HostBus CRT NB Memory DDR 2100MB/s (133MHz) SIS 650 1x D-SUB 15-Pin LVDS Transmitter VB 12b it VA 12b it ATA HDD ODD ATA 1x3.5 Jack Mini PCI 133MB/s (33MHZ)

Quanta AT8

Abstract: quanta u36 max8774 MCP51 MAX8774 AMD socket s1 C51M CX20549 max8774 pwm Samsung R418 kb3920
Contextual Info: 1 2 PCB STACK UP LAYER 1 : TOP RUN POWER SW LAYER 2 : SGND1 A 3 4 AC/BATT CONNECTOR PG 36,37 BATT CHARGER LAYER 3 : IN1 5 6 PG 38 PG 34 DC/DC +3VSUS +5VSUS LAYER 4 : IN2 DDRII 667mhz DDRII-SODIMM1 LAYER 5 : VCC PG 5 LAYER 7 : SGND2 DDRII 667mhz HT Link PCI-E