D 417 TRANSISTOR Search Results

Contextual Info: N AUER PHILIPS/D ISCR ETE b'tE D bbS3^31 QQ30bRQ 417 * A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a lastic envelope. he device is intended for use in

BF418

Abstract: BF416 J BF418 416 TRANSISTOR BF transistor BF417 transistor 417 Bf 417 g transistor BF415 emetteur video
Contextual Info: BF 416 *BF418 PNP SILICON TRANSISTOR, EP ITAXIAL PLANAR TRANSISTOR PNP SILICIUM, PLANAR EPITAXIAL Compì, of BF 415 and BF 417 Preferred device D isp o sitif recommandé Video output stages in T V sets Etages de sortie des amplificateurs Video dans ies téléviseurs

honeywell memory sram

Abstract: 419B3E
Contextual Info: b3E D 4551072 DGQ1D3M 417 • H 0 N 3 Honeywell RICMOS SEA OF TRANSISTORS GATE ARRAY HR2210 FEATURES OTHER RADIATION HARDNESS • Total Dose Hardness of >1x106 rad Si02 • Dose Rate Upset Hardness > 1x10° rad(Si)/sec • Dose Rate Survivability > 1x1012rad(Si)/sec

417 TRANSISTOR

Abstract: BF415 Bf 417 g transistor transistor 415 BF417 transistor 417 415 TRANSISTOR bf 415 J BF417 Bf 417
Contextual Info: BF415 *B F 417 NPN SILICON TRANSISTOR, E P IT A X IA L PLANAR TRANSISTOR NPN S ILIC IU M , PLA N A R E P IT A X IA L Compì, o f BF 416 and BF 418 îfc Preferred device D isp o sitif recommandé Video o utput stages in T V sets Etages de sortie des amplificateurs

BLY93C

Abstract: RF POWER TRANSISTOR NPN vhf 77530 capacitor
Contextual Info: 7 1 1 0 8 2 ti D 0 t.3 t.M7 417 « P H I N bSE D BLY93C P H IL I P S I N T E R N A T I O N A L V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, B and C operated h.f. and v.h.f. transm itters w ith a nominal supply voltage o f 28 V. The transistor is resistance stabilized and is

Contextual Info: 12E D I fc.3b?HS4 0005014 4 M A X I M U M R A T IN G S Value Unit VCEO 32 Vdc Collector-Base Voltage VCBO 60 Vdc Emitter-Base Voltage v EBO 5.0 Vdc 'c 800 mAdc Sym bol M ax Unit PD 225 mW 1.8 mW/°C Rö j a 556 °c /w Po 300 mW 2.4 mW/'C RejA 417 X /W Tj« Tstq

bf417

Abstract: Bf 417 g transistor
Contextual Info: <^£.mL-dondu<itoi LPioaucti, L/nc. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BF415 *BF417 NPN SILICON TRANSISTOR, EPITAXIAL PLANAR TRANSISTOR NPN SILICIUM, PLANAR EPITAXIAL Compl. of BF 416 and BF 418

Contextual Info: A Product Line of Diodes Incorporated FMMT415 FMMT417 NPN AVALANCHE TRANSISTOR IN SOT23 Features Mechanical Data • Avalanche Transistor • • • 60A Peak Avalanche Current Pulse width = 20ns BVCES > 260V (415) & 320V (417) • Case: SOT23 Case Material: Molded Plastic. “Green” Molding Compound

B0415

Abstract: b0416 B0633 b0636 MH8106 B0635 BD415 BD416 BD417 b063
Contextual Info: P O L A R IT Y Power Transistors TYPE NO. C A SE H M A X IM U M R A T IN G S V C E S A T FE Pd (W ) 'c (A ) V CEO (V ) m in m ax B D 239 BD239A BD239B B D 240 BD240A N N N P P T O -2 2 0 T O -2 2 0 T O -2 2 0 T O -2 2 0 T O -2 2 0 30 30 30 30 30 2 2 2 2

K1N TRANSISTOR

Abstract: marking code k1 MMBT3904 complementary mmbt3904 mmbt3904 complementary MMBT3904-7 J-STD-020D MMBT3904-7-F MMBT3906 transistor marking code
Contextual Info: MMBT3904 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • Epitaxial Planar Die Construction Complementary PNP Type Available MMBT3906 Ideal for Medium Power Amplification and Switching

Contextual Info: MMBF170 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)20 I(D) Max. (A)500m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)300m Minimum Operating Temp (øC)

ipc-SM-782

Abstract: BC847BLD BC847BLD-7
Contextual Info: BC847BLD Lead-free Green NEW PRODUCT SMALL SIGNAL NPN TRANSISTOR WITH CONTROLLED BASE-EMITTER VOLTAGE Features • · · · · Low Deviation in Base-Emitter Voltage Surface Mount Package Ideally Suited for Automated Assembly Processes Lead Free by Design/RoHS Compliant Note 2

sot-23 Marking 1HD

Contextual Info: SS8550LT1 PNP General Purpose Transistors 3 P b Lead Pb -Free 1 2 SOT-23 VCEO Value -25 -40 -5.0 -1500 300 2.4 417 -25 -0.1 -40 -100 -5.0 -100 -40 -5.0 WEITRON http://www.weitron.com.tw 1/2 -0.15 u -0.15 u 27-Jul-2012 SS8550LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)

sot-23 1Yd

Contextual Info: M8550LT1 PNP General Purpose Transistors 3 P b Lead Pb -Free 1 2 SOT-23 V CEO Value 25 40 5.0 800 300 2.4 417 25 0.1 40 100 5.0 100 35 4.0 WEITRON http://www.weitron.com.tw 1/4 0.15 u 0.15 u 15-Jul-10 M8550LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)

Contextual Info: S9012LT1 PNP General Purpose Transistors 3 P b Lead Pb -Free 1 2 SOT-23 V CEO Value -20 -40 -5 -500 300 2.4 417 S9012PLT1=12P S9012QLT1=12Q S9012RLT1=12R -0.1 -20 -40 -100 -5.0 -100 -35 -4.0 WEITRON http://www.weitron.com.tw S9012SLT1=12S 1/2 -0.15 u -0.15

DG417CJ

Contextual Info: yM X X U M 19-0114; Rev 1:3/94 , Improved SPST/SPDT Analog Switches N e w Features The DG417/DG418 are single-pole/single-throw SPST sw itch es. The DG417 is norm ally clo sed , and the D G 418 is n o rm a lly op e n . The D G 419 is s in g le ­ pole/double-throw (SPDT) with one normally closed

K2t transistor

Abstract: mmbt4403
Contextual Info: MMBT4403 40V PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data • • • • • • • • • • • • Epitaxial Planar Die Construction Complementary NPN Type Available MMBT4401 Ideal for Medium Power Amplification and Switching

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors TO – 92S 2SC536S TRANSISTOR NPN 1. EMITTER FEATURES z General Purpose Switching Application 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors 2SA608S TO – 92S TRANSISTOR PNP 1. EMITTER FEATURES z General Purpose Switching Application 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Contextual Info: M8050LT1 NPN General Purpose Transistors 3 P b Lead Pb -Free 1 2 SOT-23 V CEO Value 25 40 5.0 800 300 2.4 417 25 0.1 40 100 5.0 100 35 4.0 WEITRON http://www.weitron.com.tw 1/4 0.15 u 0.15 u 15-Jul-10 M8050LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)

Contextual Info: MMBTH10 VHF/UHF NPN SILICON TRANSISTOR 25 Volts VOLTAGE POWER SOT-23 225 mW Unit：inch mm MECHANICAL Case : SOT-23, Plastic Terminals : Solderable per MIL-STD-750, Method 2026 Approx weight : MAXIMUM RATINGS R A T IN G S YM B O L VA L UE U N IT C o lle c to r-E mi tte r Vo lta g e

K2X pnp

Abstract: MMBT4401_Q MMBT4401Q-13-F D marking PNP K2X SOT23
Contextual Info: MMBT4401 40V NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data • • • • • • • • • • • • Epitaxial Planar Die Construction Complementary PNP Type Available MMBT4403 Ideal for Medium Power Amplification and Switching

K2F transistor

Abstract: pnp k2f K2F DIODES K2F 9 K2F single Application of MMBT2907A K2F marking
Contextual Info: MMBT2907A 60V PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data • • • • • • • • • • • • Epitaxial Planar Die Construction Complementary NPN Type Available MMBT2222A Ideal for Low Power Amplification and Switching

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors L8050HQLT1 3 1 2 MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-continuoun VCEO VCBO VEBO IC Max Unit 25 40 5 1500 SOT–23 V V V