D 417 TRANSISTOR Search Results

J-STD-020A

Abstract: MMBT123S MMBT123S-7 MARKING .01 SOT DS30292
Contextual Info: SPICE MODEL: MMBT123S MMBT123S 1A NPN SURFACE MOUNT TRANSISTOR NEW PRODUCT Features • · · · · Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching High Collector Current Rating Suitable as a low voltage high current driver

td62381

Contextual Info: SILICON MONOLITHIC BIPOLAR DIGITAL INTEGRATED CIRCUIT TD62785P/F 8CH SOURCE DRIVER The TD62785P, TD62785F are e ight Channel Non-Inverting Source current transistor Array. TD62785P All units feature input pull-up resistors and output p u ll­ down resistors. These device are specifically designed for

MMBTA64

Abstract: MMBTA64-7-F J-STD-020A MMBTA13 MMBTA14 MMBTA63 DS30055
Contextual Info: MMBTA63 / MMBTA64 PNP SURFACE MOUNT DARLINGTON TRANSISTOR SPICE MODEL: MMBTA63 MMBTA64 Features • • • • • Epitaxial Planar Die Construction Complementary NPN Types Available MMBTA13 / MMBTA14 Ideal for Medium Power Amplification and Switching High Current Gain

sot-23 marking k3m

Abstract: J-STD-020A MMBTA42 MMBTA42-7 MMBTA42-7-F MMBTA92 k3m transistor
Contextual Info: MMBTA42 SPICE MODEL: MMBTA42 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • · · · Epitaxial Planar Die Construction Complementary PNP Type Available MMBTA92 Ideal for Medium Power Amplification and Switching Also Available in Lead Free Version

J-STD-020A

Abstract: MMBTA13 MMBTA13-7 MMBTA14 MMBTA63 MMBTA64
Contextual Info: SPICE MODELS: MMBTA13 MMBTA14 MMBTA13 / MMBTA14 NPN SURFACE MOUNT DARLINGTON TRANSISTOR Features • · Epitaxial Planar Die Construction Complementary PNP Types Available MMBTA63 / MMBTA64 Ideal for Medium Power Amplification and Switching High Current Gain

SOT-23 marking 2a

Abstract: 2N7002E 2N7002E-7 2N7002E-7-F J-STD-020A
Contextual Info: 2N7002E N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR SPICE MODEL: 2N7002E NEW PRODUCT Features • · · · · · Low On-Resistance: RDS ON Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Also Available in Lead Free Version

Contextual Info: CMT2N7002 SMALL SIGNAL MOSFET GENERAL DESCRIPTION FEATURES This N-Channel enhancement mode field effect transistor is ‹ High Density Cell Design for Low RDS ON produced using high cell density, DMOS technology. These ‹ Voltage Controlled Small Signal Switch

"vhf,uhf transistor"

Abstract: J-STD-020A MMBTH24 MMBTH24-7 MMBTH24-7-F
Contextual Info: SPICE MODEL: MMBTH24 MMBTH24 NPN SURFACE MOUNT VHF/UHF TRANSISTOR Features • · · · Designed for VHF/UHF Amplifier Applications and High Output VHF Oscillators High Current Gain Bandwidth Product Ideal for Mixer and RF Amplifier Applications with collector currents in the 100mA - 30 mA

J-STD-020A

Abstract: MMBTA42 MMBTA92 MMBTA92-7-F 089L
Contextual Info: MMBTA92 SPICE MODEL: MMBTA92 PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • · · · Epitaxial Planar Die Construction Complementary NPN Type Available MMBTA42 Ideal for Medium Power Amplification and Switching Also Available in Lead Free Version

marking codes transistors sot-23 K4M

Abstract: J-STD-020A MMBT5401 MMBT5401-7 MMBT5551
Contextual Info: SPICE MODEL: MMBT5401 MMBT5401 PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • · · · Epitaxial Planar Die Construction Complementary NPN Type Available MMBT5551 Ideal for Medium Power Amplification and Switching Also Available in Lead Free Version

K1N TRANSISTOR

Abstract: mmbt3904 complementary K1n td complementary mmbt3904 MMBT3904-7 MMBT3904-7-F k1n ic marking k1n marking code mmbt3904 J-STD-020A
Contextual Info: MMBT3904 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR SPICE MODEL: MMBT3904 Features • · · · Epitaxial Planar Die Construction Complementary PNP Type Available MMBT3906 Ideal for Medium Power Amplification and Switching Also Available in Lead Free Version

K38 SOT-23

Abstract: BSS138* spice model bss138 TRANSISTOR K38 transistor bss138 bss138 MARKING DS30144 marking k38 BSS138-7 BSS138-7-F
Contextual Info: SPICE MODEL: BSS138 BSS138 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · · Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Also Available in Lead Free Version SOT-23

BSV52LT1

Abstract: BSV52LT1G
Contextual Info: BSV52LT1 Switching Transistor NPN Silicon Features • Pb−Free Package is Available http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 12 Vdc Collector −Base Voltage VCBO 20 Vdc IC 100 mAdc Symbol Max

MMBT918LT1G

Abstract: MMBTA92LT3 MMBT918LT1 2m3b marking code 17 SOT-23
Contextual Info: MMBT918LT1 VHF/UHF Transistor NPN Silicon Features • Pb−Free Package May be Available. The G−Suffix Denotes a http://onsemi.com Pb−Free Lead Finish COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 15 Vdc Collector −Base Voltage

BCW69LT1

Abstract: BCW70LT1
Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LBCW69LT1G LBCW70LT1G 3 COLLECTOR 1 BASE 3 Featrues 2 EMITTER We declare that the material of product compliance with RoHS requirements. 1 2 MAXIMUM RATINGS CASE 318–08, STYLE 6 Rating Symbol

wp05r24d15

Abstract: WP05R WP05R24D05 WP05R24D12 WP05R24S03 WP05R24S05 WP05R24S12 WP05R24S15
Contextual Info: Product Data Sheet 5 WATT REGULATED SMALL PACKAGE DC/DC CONVERTER WP05R FEATURES APPLICATIONS ● ● ● ● ● ● ● ● ● ● ● ● ● SMALL PACKAGE SIZE: 1" X 2" INDUSTRY STANDARD PINOUT SURFACE MOUNT DEVICES SMD LOW-COST ALTERNATE SOURCE CONTINUOUS SHORT CIRCUIT PROTECTION

MMBT6427LT1

Abstract: MMBT6427LT1G
Contextual Info: MMBT6427LT1 Preferred Device Darlington Transistor NPN Silicon Features • Pb−Free Package is Available http://onsemi.com MAXIMUM RATINGS Rating COLLECTOR 3 Symbol Value Unit Collector −Emitter Voltage VCEO 40 Vdc Collector −Base Voltage VCBO 40 Vdc

SMMBT5401LT1G

Abstract: MMBT5401LT1G
Contextual Info: MMBT5401LT1G, SMMBT5401LT1G, MMBT5401LT3G High Voltage Transistor PNP Silicon http://onsemi.com Features • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements SOT−23 TO−236

SMMBT2907ALT1G

Abstract: SMMBT2907AL SMMBT2907ALT
Contextual Info: MMBT2907AL, SMMBT2907AL General Purpose Transistors PNP Silicon http://onsemi.com Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS • • COLLECTOR 3 Compliant AEC−Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique

Contextual Info: 2SA1417 / 2SC3647 Ordering number : EN2006C SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SA1417 / 2SC3647 High-Voltage Switching Applications Features • • • Adoption of FBET, MBIT processes. High breakdown voltage and large current capacity.

Contextual Info: MMBT2222L, MMBT2222AL, SMMBT2222AL General Purpose Transistors NPN Silicon http://onsemi.com Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS • • Compliant AEC−Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique

wcs10

Abstract: SMMBT4401LT1G
Contextual Info: MMBT4401L, SMMBT4401L Switching Transistor NPN Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique

SMMBT4403LT1G

Abstract: SMMBT4403L
Contextual Info: MMBT4403L, SMMBT4403L Switching Transistor PNP Silicon Features • S Prefix for Automotive and Other Applications Requiring Unique • http://onsemi.com Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

C-150

Abstract: IRGIB6B60KD ANSI PD-94427D
Contextual Info: PD-94427D IRGIB6B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.