D 346 TRANSISTOR Search Results

116A

Abstract: C67078-S3120-A2 D 346 transistor
Contextual Info: BUZ 346 Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 346 50 V 58 A 0.018 Ω TO-218 AA C67078-S3120-A2 Maximum Ratings Parameter Symbol

D 346 transistor

Abstract: C67078-S3120-A4
Contextual Info: BUZ 346 S2 Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 346 S2 60 V 58 A 0.018 Ω TO-218 AA C67078-S3120-A4 Maximum Ratings Parameter

Contextual Info: SIEMENS BUZ 346 Not for new design SIPMOS Power Transistor • N channel • Enhancement mode vvoyss ' fé i • Avalanche-rated Pin 1 Pin 2 G Type B U Z 346 Vbs 50 V b 58 A flDS on 0.018 n Pin 3 D S Package Ordering Code TO-218AA C67078-S3120-A2 Maximum Ratings

aqz107

Abstract: AQX2144 AQY272 AQY272A AQY272AX AQY274A AQY274AX AQY275A AQY275AX AQY277A
Contextual Info: AQY27❍ PhotoMOS RELAYS PD Type 1- channel Form A Type UL File No.: E43149 CSA File No.: LR26550 FEATURES 8.8±0.2 .346±.008 9.3±0.2 .366±.008 3.9±0.2 .154±.008 8.8±0.2 .346±.008 3.7±0.2 .146±.008 9.3±0.2 .366±.008 mm inch 1. Flat-Packaged Type (W) 8.8x (D)

BUZ 140 L

Contextual Info: SIEMENS SIPMOS Power MOS Transistors VDS /q ^D S o n • • • • BUZ 16 BUZ 346 BUZ 346 S2 = 50 . . . 60 V = 48 . . . 58 A = 0.018 Q T O -2 04 AE (BUZ 16) N channel E nhancem ent mode A valanche-proof Packages: TO -204A E (TO-3) T O -2 18 A A (T O P -3)1)

relay dc 24V matsushita

Abstract: AQY27 DC to AC transformer smoke detector schematic diagrams Solar Charge Controller diagram Transistors Diodes smd e2 ultrasonic range meter IC schematic diagram dc to ac converter transformer dc to ac AQY272
Contextual Info: AQY27❍ PhotoMOS RELAYS PD Type 1- channel Form A Type UL File No.: E43149 CSA File No.: LR26550 FEATURES 8.8±0.2 .346±.008 9.3±0.2 .366±.008 3.9±0.2 .154±.008 8.8±0.2 .346±.008 3.7±0.2 .146±.008 9.3±0.2 .366±.008 mm inch 1. Flat-Packaged Type (W) 8.8x (D)

UPA827TF

Abstract: UPA833TF UPA802T UPA831TF SOT 363 175 sot363 SOT 153 NE685 dual sot363 sot-363
Contextual Info: Low N oise Bipolar Transistors * VCE V Ic TYP TYP (mA) (dB) Facon I S il MJjX M >j DUAL BIPOLAR TRANSISTORS UPA800T 2.0 3 5 1.9 - 13 3 5 7.5 8.0 120 35 (SOT-363) S06 D NE680 344 UPA801T 2.0 3 7 1.2 - 14 3 7 9.0 4.5 120 100 (SOT-363) S06 D NE856 346 UPA802T

Contextual Info: TE X AS I NS TRUM E NTS - P RO DUCTION D ATA Tiva TM4C1233D5PM Microcontroller identical to LM4F120C4QR D ATA SHE E T D S -T M 4C 1233 D5 P M - 1 4 6 0 2 . 2 6 4 8 S P M S 346 C o p yri g h t 2 0 07-2013 Te xa s In stru me n ts In co rporated Copyright

smd transistor J3

Contextual Info: TE X AS I NS TRUM E NTS - P RO DUCTION D ATA Tiva TM4C1233D5PM Microcontroller identical to LM4F120C4QR D ATA SHE E T D S -T M 4C 1233 D5 P M - 1 4 6 0 2 . 2 6 4 8 S P M S 346 C o p yri g h t 2 0 07-2013 Te xa s In stru me n ts In co rporated Copyright

DIODE BUZ

Abstract: sis 661
Contextual Info: SIEMENS BUZ 346 SIPMOS Power Transistors • • • N channel Enhancement mode Avalanche-rated Ordering Code Tc ^DS on Package 1> 58 A 73 °C 0.018 n TO -218 AA C67078-S3120-A2 58 A 73 ‘ C 0.018£2 TO -218 AA C67078-S3120-A 4 Type VDS ¡a BUZ 346 50 V

C67078-S3120-A2

Contextual Info: SIPMOS Power Transistors BUZ 346 BUZ 346 S2 ● N channel ● Enhancement mode ● Avalanche-rated Type VDS ID TC RDS on Package 1) Ordering Code BUZ 346 50 V 58 A 73 ˚C 0.018 Ω TO-218 AA C67078-S3120-A2 BUZ 346 S2 60 V 58 A 73 ˚C 0.018 Ω TO-218 AA

D 346 transistor

Contextual Info: SIEMENS BUZ 346 S2 Not far new design SJPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 346 S2 Vbs 60 V b 58 A flbaon 0.018 n Package Ordering Code TO-218AA C67078-S3120-A4 Maximum Ratings Parameter Symbol Continuous drain current

TRANSISTOR sd 346

Contextual Info: SIEMENS BUZ 346 N oi fo r new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 346 Vds 50 V b 58 A ^DS on Package Ordering Code 0.018 Q TO-218 AA C67078-S3120-A2 Maximum Ratings Parameter Symbol Continuous drain current

Contextual Info: SIEMENS BUZ 346 S2 Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 346 S2 Vbs 60 V b ^DS on Package Ordering Code 58 A 0.018 n TO-218AA C67078-S3120-A4 Maximum Ratings Parameter Symbol Continuous drain current

2n4401 331

Abstract: 2n4403 331 2n3904 409 2n3904 331 k 2715 2n3906 331 1352s MPSA06 346 2N584 C847B
Contextual Info: Transistors Product List Product List 2N3904 . 614 2S B 2N3906 . 598

transistor D600k

Abstract: transistor d600 D600K D600k transistor transistor b631 b631k b631 transistor 2SB631 transistor B631K k b631k
Contextual Info: Ordering number:ENN346G PNP/NPN Epitaxial Planar Silicon Transistor 2SB631,631K/2SD600,600K 100V/120V, 1A Low-Frequency Power Amplifier Applications Features Package Dimensions • High breakdown voltage VCEO 100/120V, High current 1A. · Low saturation voltage, excellent hFE linearity.

2sb631 transistor

Abstract: transistor b631 transistor D600k 2sb631 2sd600
Contextual Info: Ordering number:ENN346G PNP/NPN Epitaxial Planar Silicon Transistor 2SB631,631K/2SD600,600K 100V/120V, 1A Low-Frequency Power Amplifier Applications Features Package Dimensions • High breakdown voltage VCEO 100/120V, High current 1A. · Low saturation voltage, excellent hFE linearity.

Contextual Info: N AUER PHILIPS/DISCRETE DEVELOPMENT D A T A ObE D bbS3T31 D0152D1 fl • RX3034B70W This data sheet contains advance information and specifications are subject to change without notice. PULSED MICROWAVE POWER TRANSISTORS NPN silicon planar epitaxial microwave power transistor, intended for use in a common-base class-C

SILICON COMPLEMENTARY transistors darlington

Abstract: NTE2554 NTE2555
Contextual Info: NTE2554 NPN & NTE2555 (PNP) Silicon Complementary Transistors Darlington Driver Applications: D Industrial Equipment D Printers D Typewriters D Sewing Machines D Recorders D Computers D Igniters D D D D D D D Car Coolers Projectors Players Stereos Home Appliances

sd 347

Abstract: VEB mikroelektronik Transistoren DDR sd 346 Funkamateur FUNKAMATEUR-Bauelementeinformation SD349 telefunken transistoren MIKROELEKTRONIK ERFURT aktive elektronische bauelemente ddr
Contextual Info: FUNKAMATEUR-Bauelementeinformation Silizium-npn- und -pnp-Leistungstransistoren in Epitaxie-Planar-Technologie A pplikationsschaltungen T G L 39125 H ersteller: V E B M ik ro e le k tro n ik „ A n n a S e g h e r s " N e u h a u s Kurzcharakteristik Grenzwerte im Betriebstemperaturbereich

NTE2591

Abstract: NPN transistor 900v
Contextual Info: NTE2591 Silicon NPN Transistor High Voltage Amp/Switch Features: D High Breakdown Voltage, High Reliability D Low Output Capacitance D Wide ASO Range Absolute Maximum Ratings: TA = +25°C unless otherwise specified Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2000V

NPN 800V

Abstract: NPN VCEO 800V transistor 800v NTE2585
Contextual Info: NTE2585 Silicon NPN Transistor High Voltage Amplifier Features: D High Breakdown Voltage D Low Output Capacitance D High Reliability D Intended for High–Density Mounting Suitable for Sets Whose Height is Restricted Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)

NTE2591

Abstract: NTE259
Contextual Info: NTE2591 Silicon NPN Transistor High Voltage Amp/Switch Features: D High Breakdown Voltage, High Reliability D Low Output Capacitance D Wide ASO Range Absolute Maximum Ratings: TA = +25°C unless otherwise specified Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2000V

NTE2590

Contextual Info: NTE2590 Silicon NPN Transistor High Voltage Amp/Switch Features: D High Breakdown Voltage, High Reliability D Low Output Capacitance D Wide ASO Range Absolute Maximum Ratings: TA = +25°C unless otherwise specified Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1700V