D 346 TRANSISTOR Search Results

aqz107

Abstract: AQX2144 AQY272 AQY272A AQY272AX AQY274A AQY274AX AQY275A AQY275AX AQY277A
Contextual Info: AQY27❍ PhotoMOS RELAYS PD Type 1- channel Form A Type UL File No.: E43149 CSA File No.: LR26550 FEATURES 8.8±0.2 .346±.008 9.3±0.2 .366±.008 3.9±0.2 .154±.008 8.8±0.2 .346±.008 3.7±0.2 .146±.008 9.3±0.2 .366±.008 mm inch 1. Flat-Packaged Type (W) 8.8x (D)

relay dc 24V matsushita

Abstract: AQY27 DC to AC transformer smoke detector schematic diagrams Solar Charge Controller diagram Transistors Diodes smd e2 ultrasonic range meter IC schematic diagram dc to ac converter transformer dc to ac AQY272
Contextual Info: AQY27❍ PhotoMOS RELAYS PD Type 1- channel Form A Type UL File No.: E43149 CSA File No.: LR26550 FEATURES 8.8±0.2 .346±.008 9.3±0.2 .366±.008 3.9±0.2 .154±.008 8.8±0.2 .346±.008 3.7±0.2 .146±.008 9.3±0.2 .366±.008 mm inch 1. Flat-Packaged Type (W) 8.8x (D)

Contextual Info: TE X AS I NS TRUM E NTS - P RO DUCTION D ATA Tiva TM4C1233D5PM Microcontroller identical to LM4F120C4QR D ATA SHE E T D S -T M 4C 1233 D5 P M - 1 4 6 0 2 . 2 6 4 8 S P M S 346 C o p yri g h t 2 0 07-2013 Te xa s In stru me n ts In co rporated Copyright

transistor D600k

Abstract: transistor d600 transistor b631 D600k transistor transistor B631K D600K b631 transistor B631K 2SB631 D600
Contextual Info: Ordering number:346G PNP/NPN Epitaxial Planar Silicon Transistor 2SB631,631K/2SD600,600K 100V/120V, 1A Low-Frequency Power Amplifier Applications Features Package Dimensions • High breakdown voltage VCEO 100/120V, High current 1A. · Low saturation voltage, excellent hFE linearity.

2sb631 transistor

Abstract: transistor b631 transistor D600k 2sb631 2sd600
Contextual Info: Ordering number:ENN346G PNP/NPN Epitaxial Planar Silicon Transistor 2SB631,631K/2SD600,600K 100V/120V, 1A Low-Frequency Power Amplifier Applications Features Package Dimensions • High breakdown voltage VCEO 100/120V, High current 1A. · Low saturation voltage, excellent hFE linearity.

Contextual Info: N AUER PHILIPS/DISCRETE DEVELOPMENT D A T A ObE D bbS3T31 D0152D1 fl • RX3034B70W This data sheet contains advance information and specifications are subject to change without notice. PULSED MICROWAVE POWER TRANSISTORS NPN silicon planar epitaxial microwave power transistor, intended for use in a common-base class-C

NPN 800V

Abstract: NPN VCEO 800V transistor 800v NTE2585
Contextual Info: NTE2585 Silicon NPN Transistor High Voltage Amplifier Features: D High Breakdown Voltage D Low Output Capacitance D High Reliability D Intended for High–Density Mounting Suitable for Sets Whose Height is Restricted Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)

in4007

Contextual Info: PT8A2524-6/34-6/44-6 | |

I3003

Abstract: KSR1207 KSR2207
Contextual Info: SAMSUNG SEMICONDUCTOR INC T-3S-H IME D § KSR1207 f 0007075 O NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION B ias R esistor Built In • Switching Circuit, Inverter, Interface circuit Driver circuit • Built in bias Resistor (R,=22KQ, R,=47Ktl)

Contextual Info: 32E D • Ô23b320 QDlb77D b « S I P NPN Silicon RFTransistor t ^ -3 I—»7 BF 770 A SIEMENS/ SPCLi SEMICONDS • • Low-noise broadband transistor for frequencies up to 2 GHz at collector currents up to 30 mA Specially suitable for IF amplifiers in TV-sat tuners

TRANSISTOR BO 346

Abstract: BFX89 case BFX89 Power Transisitor 100V 2A Q62702-F296
Contextual Info: B FX89 NPN Transistor for antenna amplifiers B F X 89 is an epitaxial N P N silicon RF transistor in a case 1 8 A 4 D IN 41876 TO-72 . The leads are electrically insulated from the case. This transistor is suitable for general applications and, for instance, for use in antenna and RF amplifiers up into the GHz

transistor c 3206

Abstract: TRANSISTOR 2SC Audio Amplifier Applications 2SC3206
Contextual Info: SILICON NPN TRANSISTOR TRIPLE DIFFUSED TYPE PCT PROCESS 2SC 3206 ( A PPLIC A TIO N S ) • Black and White TV Video Output Applications. • High Voltage Switching A pplications. ■ D riv e r Stage Audio A mplifier Applications. C FEATU RES • High VCEO * VcEO — 150 V

IN4007

Abstract: transistor IN4007 IN4007 DC IN4007 F 5V to 240V relay ic IN4007 voltage regulator PT8A2544 2n5551 128 240v relay ic timer relay
Contextual Info: Data Sheet PT8A2524-6/34-6/44-6 Universal Timer Controller |

CHM6031LPAGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CHM6031LPAGP CURRENT 55 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D-PAK TO-252 FEATURE

CHM3055LAPAGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CHM3055LAPAGP CURRENT 12 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D-PAK TO-252 FEATURE

928 606 402 00

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5008 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC5008 is an NPN epitaxial silicon transistor designed for use in millimeters in low noise and small signal am plifiers from VHF band to L band. Low

BFY86

Abstract: db347 Scans-0010448
Contextual Info: Nicht für Neuentwicklungen Not for new developments BFY 85 • BFY 86 Silizium-NPN-Epitaxial-Planar-Doppeltransistoren Silicon NPN Epitaxial Planar Double Transistors Anwendungen: In Differenzverstärkern Applications: In diffe re n tia l am plifiers Besondere Merkmale:

HEP transistors

Abstract: motorola hep BSS71 MOTOROLA 2N3440 MOTOROLA BF337 MM421 transistors for uhf oscillators BSS72 2n3439 motorola MM6427
Contextual Info: METAL SMALL-SIGNAL TRANSISTORS continued Darlington Transistors These transisto rs are ch a ra c te rize d for very high g ain and input im ped an ce a p p lic a tio n s . D evices are of m o nolithic con­ struction. 'c Device Type V(BR) CEO Volts Min mA

Contextual Info: Product specification BSS215P OptiMOS P2 Small-Signal-Transistor Product Summary Features V DS • P-channel R DS on ,max • Enhancement mode • Super Logic Level (2.5V rated) -20 V V GS=-4.5 V 150 mΩ V GS=-2.5 V 280 ID -1.5 A • Avalanche rated PG-SOT23

BFX59

Abstract: Transistor BFX 25 BFX59F
Contextual Info: B F X 59 B F X 59 F N PIM -Transistoren fü r Treiber- und Endstu fen in A ntennenverstärkern BFX 59 und BFX 59F sind epitaktische NPN-Silizium-Planar-HF-Transistoren im Gehäuse 1 8 A 4 DIN 41876 TO-72 . Die Anschlüsse sind vom Gehäuse elektrisch isoliert. Die Tran­

BF450

Abstract: BF451 BF 450 IY21 Q62702-F312 SIEMENS marking IC marking jw SiEMENS PM 350 92 bf 451 tag 451
Contextual Info: SIEMENS BF 450 BF 451 PNP Silicon RF Transistors • For common emitter AM and FM stages • Low feedback capacitance due to shield diffusion Type Marking Ordering Code BF 450 BF 451 - Q62702-F312 Q62702-F313 Pin Configuration 1 2 3 E C Package1 B TO-92 Maximum Ratings

Contextual Info: _ _ _ _ _ _ PowerMOS transistor N AMER PHILIPS/DISCRETE B U Z 4 5 A _ ObE D ^ • bbSa^l O D m b S M J ’ ~ ~ T - 2? - i 3 July 1987 GENERAL DESCRIPTION N-channel enhancement moae field-effect power transistor in a metal envelope.

TRANSISTOR BO 345

Abstract: TD62554S TRANSISTOR BO 346 TRANSISTOR BO 344 62554S
Contextual Info: SILICON MONOLITHIC BIPO LAR DIGITAL INTEGRATED CIRCUIT TD62551SJD62553S TD62554SJD62555S 4CH SINGLE DRIVER : C O M M O N EMITTER The TD62551S are comprised of four NPN transistor arrays. Applications include relay, hammer, lamp and display LED drivers. FEATURES

BFX59

Abstract: Transistor BFX 25 BFX59F
Contextual Info: B F X 59 B F X 59 F N PIM -Transistoren fü r Treiber- und Endstu fen in A ntennenverstärkern BFX 59 und BFX 59F sind epitaktische NPN-Silizium-Planar-HF-Transistoren im Gehäuse 1 8 A 4 DIN 41876 TO-72 . Die Anschlüsse sind vom Gehäuse elektrisch isoliert. Die Tran­