116A Search Results

Contextual Info: APTM120U10SAG Single switch Series & parallel diodes MOSFET Power Module SK CR1 D VDSS = 1200V RDSon = 100mΩ typ @ Tj = 25°C ID = 116A @ Tc = 25°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control

irl2203n

Abstract: *L2203N
Contextual Info: PD - 91366 IRL2203N HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 30V RDS on = 7.0mΩ G ID = 116A‡ S Description Advanced HEXFET® Power MOSFETs from International

Contextual Info: APTM120U100D-AlN Single switch with Series diodes MOSFET Power Module VDSS = 1200V RDSon = 100mΩ max @ Tj = 25°C ID = 116A @ Tc = 25°C Application • Zero Current Switching resonant mode Features • Power MOS 7 MOSFETs - Low RDSon - Low input and Miller capacitance

APT0502

Abstract: APT0601 APTM120U100DAG APTM120U10DAG microsemi mosfet 1000V dk 434
Contextual Info: APTM120U10DAG Single switch with Series diodes MOSFET Power Module VDSS = 1200V RDSon = 100mΩ typ @ Tj = 25°C ID = 116A @ Tc = 25°C SK S Application • Zero Current Switching resonant mode D G DK S D Features • Power MOS 7 MOSFETs - Low RDSon - Low input and Miller capacitance

hg116a

Contextual Info: GaAs Hall Element HG-116A Shipped in packet-tape reel 4,000pcs per reel Notice : It is requested to read and accept "IMPORTANT NOTICE" written on the back of the front cover of this catalogue. ●Absolute Maximum Ratings(Ta=25℃) Item Symbol Limit Unit Max. Input Current

APTM120U10SA

Contextual Info: APTM120U10SA Single switch Series & parallel diodes MOSFET Power Module SK CR1 D S Q1 G S D VDSS = 1200V RDSon = 100mΩ typ @ Tj = 25°C ID = 116A @ Tc = 25°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies

Contextual Info: APT60GT60BR ADVANCED POW ER Te c h n o l o g y 600V 116A Thunderbolt IGBT The Thunderbolt IGBT is a new generation ot high voltage power IGBTs. Using Non-Punch ThroughTechnology the Thunderbolt IGBT™ offers superior ruggedness and ultrafast switching speed.

Contextual Info: FDD8874 / FDU8874 N-Channel PowerTrench MOSFET 30V, 116A, 5.1mΩ General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM

Contextual Info: FDD8874 / FDU8874 N-Channel PowerTrench MOSFET 30V, 116A, 5.1mΩ General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM

Contextual Info: PD - 91366 IRL2203N HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 30V RDS on = 7.0mΩ G ID = 116A‡ S Description Advanced HEXFET® Power MOSFETs from International

R5F6416MADFE

Abstract: p125s R5F6416LADFE cts9
Contextual Info: R32C/116A Group Shortsheet PRELIMINARY R32C/116A Group RENESAS MCU 1. REJ03B0297-0050 Rev.0.50 Mar 05, 2010 Overview 1.1 Features The M16C Family offers a robust platform of 32-/16-bit CISC microcomputers MCUs featuring high ROM code efficiency, extensive EMI/EMS noise immunity, ultra-low power consumption, high-speed processing

Contextual Info: GaAs Hall Element HG-116A Shipped in packet-tape reel 4,000pcs per reel Notice : It is requested to read and accept "IMPORTANT NOTICE" written on the back of the front cover of this catalogue. ●Absolute Maximum Ratings(Ta=25℃) Item Symbol Limit Unit Max. Input Voltage

Contextual Info: GaAs Hall Element HG-116A 標準はテーピングリール供給です。 （4000pcs.／Reel） Shipped in packet-tape reel 4,000pcs per reel 注意：弊社製品のご検討にあたっては本カタログの表紙裏の「重要注意事項」を 良くお読みください。

Contextual Info: GaAs Hall Element HG-116A（開発中） 標準はテーピングリール供給です。 （4000pcs.／Reel） Shipped in packet-tape reel 4,000pcs per reel 注意：弊社製品のご検討にあたっては本カタログの表紙裏の「重要注意事項」を

67E-3

Abstract: FDD8874 FDU8874
Contextual Info: FDD8874 / FDU8874 N-Channel PowerTrench MOSFET 30V, 116A, 5.1m Ω General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM

Contextual Info: GaAs Hall Element HG-116A Shipped in packet-tape reel 4,000pcs per reel Notice : It is requested to read and accept "IMPORTANT NOTICE" written on the back of the front cover of this catalogue. ●Absolute Maximum Ratings(Ta=25℃) Item Symbol Limit Unit Max. Input Current

AN-994

Abstract: IRF530S IRL2203NL IRL2203NS
Contextual Info: PD - 94394A IRL2203NS IRL2203NL l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated 100% RG Tested HEXFET Power MOSFET D VDSS = 30V RDS on = 7.0mΩ G ID = 116A‡

Contextual Info: User's Manual 32 R32C/116A Group User’s Manual: Hardware R32C/116A Group User’s Manual: Hardware RENESAS MCU M16C Family / R32C/100 Series All information contained in these materials, including products and product specifications, represents information on the product at the time of publication and is subject to change by

IRL2203N

Abstract: mosfet p 30v 60a
Contextual Info: PD - 91366 IRL2203N HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 30V RDS on = 7.0mΩ G ID = 116A‡ S Description Advanced HEXFET® Power MOSFETs from International

IRL2203NL

Abstract: AN-994 IRF530S IRL2203NS
Contextual Info: PD - 94394 IRL2203NS IRL2203NL HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 30V RDS on = 7.0mΩ G ID = 116A‡ S Description

BC116A

Abstract: bc 330 transistor
Contextual Info: BC 116A S I L I C O N P L A N A R PNP GENERAL PURPOSE TRANSISTOR The 116A is a silicon planar epitaxial PNP tra n sisto r iri a TO -39 epoxy package. It is designed as general purpose device fo r application over a w ide range of co lle cto r current. ABSOLUTE MAXIMUM RATINGS

mosfet p 30v 60a

Abstract: IRL2203NPBF
Contextual Info: PD - 94953 IRL2203NPbF HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description l D VDSS = 30V l RDS on = 7.0mΩ G ID = 116A‡

Contextual Info: PD - 94953 IRL2203NPbF HEXFETÆ Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description l D VDSS = 30V l RDS on = 7.0m" G ID = 116A‡

Contextual Info: GaAs Hall Element HG-116A 標準はテーピングリール供給です。 （4000pcs.／Reel） Shipped in packet-tape reel 4,000pcs per reel 注意：弊社製品のご検討にあたっては本カタログの表紙裏の「重要注意事項」を 良くお読みください。