100JIH Search Results

Contextual Info: fo t Immediate Assistante, Contact Your Local Salespersoa SDM862 SDM863 SDM872 SDM873 B U R R -B R O W . 16 Single Ended/8 Differential Input 12-BIT DATA ACQUISITION SYSTEMS FEATURES • COMPLETE 12-BIT DATA ACQUISITION SYSTEM IN A MINIATURE PACKAGE • INPUT RANGES SELECTABLE FOR

KYS 30 40 diode

Abstract: 40n60 transistor mos 30N60 2355Z wiom DC IXYS 30N60 of ic 3915 1XYS 30N60T 35N100
Contextual Info: MbE 4bôb22b D I X Y S OGQQÔTM T H IX Y CORP □IXYS Data Book NO.91560A October 1991 "S" Series MOSIGBTs High Short Circuit SOA Insulated Gate Bipolar Transistor Features Guaranteed Short Circuit Capability SCSOA Low Input Capacitances Optimized for 60Hz to 30kHz Switching

Contextual Info: APT60GT60BR ADVANCED POW ER Te c h n o l o g y 600V 116A Thunderbolt IGBT The Thunderbolt IGBT is a new generation ot high voltage power IGBTs. Using Non-Punch ThroughTechnology the Thunderbolt IGBT™ offers superior ruggedness and ultrafast switching speed.

Contextual Info: tfV W S CA3165 .r ? * 7 ^SSS&SSSr2 May 1999 ca" OÏ Electronic Switching Circuit evtv,a'v Features Description • Switching Initiated by Damping of InternalOscillator • Proximity Sensing of Rotational Motion • Repeatable Timing of Switching States The CA3165 is a single chip electronic switching circuit

MAXL001

Abstract: 51559 toroid inductor MAX655 105c inductor MAX743 MAX4193 MAX630 POWER toroid inductor 5A MAX634
Contextual Info: W I> JX I> I/I 100\iH Toroid Inductor _ Features ♦ ♦ ♦ ♦ ♦ ♦ Low Electromagnetic Interference Toroid Construction Low-Cost, Iron-Powder Core 200kHz Operation 1.75A Saturation Current 0.08ft DC Resistance Ordering Information

A1s smd TRANSISTOR

Abstract: smd diode JC 9E 1px transistor crystal 11.059MHZ AKR 121 11.059mHz crystal oscillator 1E71 mab8051 mPC 514 smd diode code A1s
Contextual Info: NAPC/PHILIPS SEMICOND b3E ] • b b S 3 cJE4 □□0 2 51 1 3GD I SIC3 Philips Semiconductors Microcontroller Products Objective specification Low-voltage single-chip 8-bit microcontroller 83CL411 GENERAL DESCRIPTION FEATURES The83CL411 is manufactured in an

HG20N60B3

Abstract: hG20N60 hg20n60b3 equivalent HG20N60B G20N60B3 hg*20n60 g20n60 vqe 24 d HGTG20N60B3 G20N60B
Contextual Info: interrii HGT1S20N60B3S, HGTP20N60B3, HGTG20N60B3 J a n u a ry . m Data Sheet 40A, 600V, UFS Series N-Channel IGBTs The HGT1S20N60B3S, the HGTP20N60B3 and the HGTG20N60B3 are Generation III MOS gated high voltage switching devices combining the best features of MOSFETs

Contextual Info: MITSUBISHI Neh POWER MOSFET FS70SMH-2 HIGH-SPEED SWITCHING USE FS70SMH-2 OUTLINE DRAWING Dimensions in mm .4.5. 15.9MAX 1.5 /- Ç 20.0 50 r ^2 f 3.2 5.45 5.45 0.6 4 Q w r 2.5V DRIVE V d s s .100V

Contextual Info: MITSUBISHI Neh POWER MOSFET FS30SMH-3 HIGH-SPEED SWITCHING USE OUTLINE DRAWING Dimensions in mm .4.5. 1.5 4 Q w r 2.5V DRIVE V d s s . 150V rDS ON (MAX). 8 7 m i2

TH 2190 mosfet

Contextual Info: MITSUBISHI Neh POWER MOSFET FS5VSH-2 HIGH-SPEED SWITCHING USE ; FS5VSH-2 OUTLINE DRAWING Dimensions in mm 10.5MAX. ! I 0.8 \ - 1. i o • 2.5V DRIVE • VDSS . 100V • rDS ON (MAX) .0.440

Contextual Info: MITSUBISHI Neh POWER MOSFET FS1OVSJ-3 HIGH-SPEED SWITCHING USE FS1 OVSJ-3 I • 4V DRIVE • VDSS . 150V i • ros O N ( m a x ) . 160mn

Contextual Info: MITSUBISHI Neh POWER MOSFET FS5VS-3 HIGH-SPEED SWITCHING USE FS5VS-3 • 10V DRIVE • VDSS .150V • rD S O N (MAX) .0.38S2

pi6v

Contextual Info: LTC 1433/LTC 1434 450mA, Low Noise Current Mode Step-Down DC/DC Converter F€RTUR€S D C S C R IC T IO n • ■ ■ ■ ■ ■ ■ ■ The LTC 1433/LTC1434 are monolithic pulse width modu­ lated step-down DC/DC converters. By utilizing current mode switching techniques, they provide excellent AC and

Contextual Info: MITSUBISHI Neh POWER MOSFET FS10UMJ-3 HIGH-SPEED SWITCHING USE FS10UMJ-3 OUTLINE DRAWING ILI U Dimensions in mm LU q w e 4V DRIVE 150 V 160 m i 2 V d s s . rDS ON (M AX).

743EPE

Abstract: lO01 MAX743CPE MAXL001 Caddell-Burns mpp schematic MAX742 MAX743 MAX743CWE MAX743EWE
Contextual Info: 19-2873; Rev 0; 7/90 Dual-Output, Switch-M ode R egulator +5V to ± 15V o r± 1 2 V _ F e a tu re s The MAX743 DC-DC converter IC contains all the active circuitry needed to build small, dual-output power sup­ plies. Relying on simple two-terminal inductors rather

Contextual Info: FSYA250D, FSYA250R ¡fì HARRIS S E M I C O N D U C T O R 27A, 200V, 0.100 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Ju ne 1 998 Features rDS C N) = 0.100S2 T h e D is c re te P ro d u c ts O p e ra tio n of H a rris S e m ic o n d u c to r h a s d eve lo pe d a s e rie s o f R a d ia tio n H a rd e n e d M O S F E T s

FS10KM

Contextual Info: MITSUBISHI Neh POWER MOSFET FS10KM-3 HIGH-SPEED SWITCHING USE FS10KM-3 OUTLINE DRAWING Dimensions in mm 10 ± 0.3 2 .8 1 0 .2 • w 10V DRIVE V d s s . 150V rDS ON (MAX). 170mi2

D-6840

Abstract: D6840 TXYS 91S50B IC-9017 c10006 d684
Contextual Info: □IXYS PRELIMINARY TECHNICAL INFORMATION Data Sheet No 91S50B July 1992 HIGH VOLTAGE "S" Series MOSIGBT IX S H 1 7 N 1 0 0 ,1 0 0 A Improved S C SO A Capability IX S M 1 7 N 1 0 0 ,1 0 0 A Part Number •

Contextual Info: MITSUBISHI Neh POWER MOSFET FS30UMH-2 HIGH-SPEED SWITCHING USE FS30UMH-2 OUTLINE DRAWING Dimensions in mm * 2.5V DRIVE V d s s .1 0 0 V rDS ON (M A X ) .93mi2

Contextual Info: MITSUBISHI Neh POWER MOSFET FS10KMJ-3 HIGH-SPEED SWITCHING USE FS10KMJ-3 OUTLINE DRAWING Dimensions in mm 10 ± 0.3 2 .8 1 0 .2 4V DRIVE V d s s .150 V rDS ON (M AX). 160 m i 2

Specification Quartz Crystals 3.58Mhz

Abstract: FT 16MHz quartz RESONATOR
Contextual Info: Philips Components-Signetics Document No. 853-1461 ECN No. 000319 Date of issue S ep te m be r6 ,1990 Status Product Specification 80CL410/83CL410 Low voltage/low power single-chip 8-bit microcontroller Application Specific Products DESCRIPTION FEATURES The 80CL410/83CL410 hereafter ge­

Contextual Info: ^M C C DEVICE SPECIFICATION S 4 4 0 2 /S 4 4 0 3 B iC M O S P L L C L O C K G E N E R A T O R S FEATURES APPLICATIONS Generates six clock outputs from 20 MHz to 80 MHz the S4403 generates ten outputs and HFOUT generates 10MHz to 40MHz 21 selectable phase/frequency relationships for

Contextual Info: M ODEL IM C -1210 Inductors Surface Mount, Molded a FEATURES • Molded construction provides superior strength and moisture resistance • Tape and reel packaging for automatic handling, 2000/reel, EIA 481 ELECTRICAL SPECIFICATIONS STANDARD ELECTRICAL SPECIFICATIONS

d74c

Abstract: FSDV 3df s 45 58x58 5CCL MC139
Contextual Info: M INIATURE C O IL S TO KO f r i g n i J i, F r e q .r a n g e Type L ran ge Q T y p . kHz kHz MHz MHz MHz 10 10 0 1 1 0 10 0 “ 1-1-1-1-1“ il i il i 1mH~ 680(iH f& w 75-100 18 - 58pF (E -12 series) (6.2x6.2x6.2mm) IV 5PA 5PAG i i 1 ' H