D 337 TRANSISTOR Search Results

marking code CSK

Abstract: transistor marking CSK AD004-00 AD004-02
Contextual Info: H Y - L IN E Sensor-Tec Vertriebs GmbH Inselkammerstraße 10 D-82008 Unterhaching Tel.: 089 / 614 503 30 Tel.: 0 8 9 /6 1 4 09 60 S E N S O R - T E C RS 337-7381, 337-7397, 337-7410 GMR Digital Magnetic Field Sensors AP Series NVE s GMR Digital Magnetic Field Sensors offer unique

Transistor 337

Abstract: transistor bc 337 transistor bc 630 c 337 25 transistor 338 BC 337 transistor BC 338 transistors bc 337 NPN 337 337 npn transistor
Contextual Info: *B C 337 BC 338 NPN SILICON TRANSISTORS, EPITAXIAL PLANAR TRANSISTORS NPN SILIC IU M , PLA N A R E P IT A X IA U X Compì, of BC 327, BC 328 % Preferred device D isp o sitif recommandé The 8C 337 and BC 338 transistors are intended fo r a wide variety o f medium power AF am plifier

Contextual Info: N AMER PHILIPS/DISCRETE b^E D • bbSS^Sl QQ 3 Q 337 b54 « A P X Philips Semiconductors Product Specification PowerMOS transistor BUK100-50GL Logic level DESCRIPTION Monolithic temperature and overioa<y>rotected logic level power

c 337 25

Abstract: NPN 337 bc 170 c BC 337 bc 170 BC338 bc337 bc 338 npn bc 337 AF200
Contextual Info: BC 337 * BC 338 Silizium-NPN-Epitaxial-Planar-NF-Transistoren Silicon NPN Epitaxial Planar AF Transistors Anwendungen: T reiber und Endstufen Applications: D river and p o w e r stages Features: Besondere Merkmale: • Verlustleistung 625 mW • In G ruppen so rtie rt

Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR BC327/328 SWITCHING AND AMPLIFIER APPLICATIONS • Suitable for A F-D river stages and low pow er output stages • C om plem ent to BC 337/BC 338 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector-E m itter Voltage

BUV27

Abstract: BUV27A
Contextual Info: PHILIPS INTERNATIONAL MSE D E3 711002b 00310Ô1 5 E3PHIN BUV27 BUV27A 7^ 337/ SILICON POWER TRANSISTO RS High-speed, glass-passivated npn power transistors in a T 0 -2 2 0 envelope intended for fast switching applications such as high frequency and efficiency converters, switching regulators and motor control.

Contextual Info: N AtlER P H I L I P S / D I S C R E T E SSE D • b b S B IB l 001^337 1 ■ Surface Mount Devices GENERAL PURPOSE TRANSISTORS, PNP TYPE PACKAGE RATINGS hpe VCEO V VCBO V min/max. at Iq A/c e mA/V mA VCE sat max. atfc/lQ V mA/mA ' H typ mh2 , PINOUT ; SEE 7

b0335

Abstract: B0337 b0333 OF IC 337 transistor 337 b0332 D 337 TRANSISTOR ICM 72131 BD335 tr 337
Contextual Info: BD331; 333 BD335; 337 J y P HILIPS INTERNATIONAL SLE ]> • 711002b DDMSflab 2 3 5 ■ PHI N T S IL IC O N D A R L IN G T O N P O W E R T R A N S IS T O R S N-P-N epitaxial base transistors in m onolithic Darlington circu it fo r audio ou tput stages and general

TRANSISTOR 237b

Abstract: TRANSISTOR "BC 258" transistor BC 56 Transistor BC 308C bc 238c transistor 237B TRANSISTOR BC Transistors 257b TRANSISTOR BC 307c transistor BC 307A TRANSISTOR 308B
Contextual Info: BHARAT ELEK/SE niC OND DI 4?E D • 143S3TÛ □□□□OCH 2Tb ■ VCE Si Device No 37. 38. 39. 40. 41. BC 337-40 BC 338 BC 338-16 BC 338-25 BC 338-40 V h FE VCEO VCBO Volts min Volts mm Volts min at bias mtn /max 45 25 25 25 25 50 30 30 30 30 5 5 5 5 5

c 337 25

Abstract: 337 marking code bc337 c 33740 337-40 338 marking code bc 337 equivalent bc 170 c npn bc 337 NPN 337
Contextual Info: NPN Silicon AF Transistors BC 337 BC 338 High current gain ● High collector current ● Low collector-emitter saturation voltage ● Complementary types: BC 327, BC 328 PNP ● 2 1 Type Marking Ordering Code BC 337 BC 337-16 BC 337-25 BC 337-40 BC 338

BD331

Abstract: BD335 TRANSISTOR BD338
Contextual Info: BD331; 333 BD335; 337 _ SILICON DARLINGTON POWER TRANSISTORS N-P-N epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications; plastic SOT-82 envelope for clip mounting; can also be soldered

Contextual Info: BC337, BC338 Small Signal Transistors NPN TO-92 _ FEATURES_ NPN Silicon Epitaxial Planar Transistors for switching and am plifier applications. Especially suitable for AF-driver stages and low power output stages. .098 ( 2 . 5 ) *

TRANSISTOR BC 327

Abstract: h21e bc 327 complementary pair transistor BC 337 transistor AS 337 transistor BC 327 40 transistor bc 630 TRANSISTOR BC 328 BC327 transistor 327
Contextual Info: *B C 3 2 7 BC328 NP SILICON TRANSISTORS, EPITAXIAL PLANAR R A N S IS T O R S PNP S IL IC IU M , P L A N A R E P IT A X IA U X ompl. of BC 337 and BC 338 îf; Preferred device Dispositif recommandé he BC 327 and BC 328 transistors are intended fo r a ide variety o f medium power AF am plifier and switlin g application ; they are particulary useful as

BC327 W 75

Abstract: BC327 BC338 bc337 m pin configuration Bc337 pin configuration Bc327 BC328 BC327 pin out
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company BC327/A BC328 PNP BC337/A BC338 NPN SILICON PLANAR EPITAXIAL TRANSISTORS TO-92 Plastic Package For Lead Free Parts, Device Part # will be Prefixed with "T" C BE General Purpose Transistors Best Suited for use in Driver and Output Stages of Audio Amplifier

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company BC327/A BC328 PNP BC337/A BC338 NPN SILICON PLANAR EPITAXIAL TRANSISTORS TO-92 Plastic Package For Lead Free Parts, Device Part # will be Prefixed with "T" C BE General Purpose Transistors Best Suited for use in Driver and Output Stages of Audio Amplifier

equivalent for BC327

Abstract: BC327 BC328 BC338 bc337 m 337a
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company BC327/A BC328 PNP BC337/A BC338 NPN SILICON PLANAR EPITAXIAL TRANSISTORS TO-92 Plastic Package For Lead Free Parts, Device Part # will be Prefixed with "T" C BE General Purpose Transistors Best Suited for use in Driver and Output Stages of Audio Amplifier

transistor BC 310

Abstract: transistor bc 487 transistor BC 321 TRANSISTOR BC 416 b pnp bc 337-25 transistor TRANSISTOR BC 415 transistor bc 318 transistor BC 337-25 TRANSISTOR BC 413 bc 337-40 transistor
Contextual Info: general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique th o m s o n -c s f Case ^ ^ ^ 1 0 Polarity 92 CB-1% NPN PNP NPN PNP NPN 0,8.1 A 0,4.0,6 A « 0 ,2 A PNP v CEO 20 V B Ç 2 3 8 .

em 483

Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR /IPA804T NPN SILICON EPITAXIALTRANSISTOR WITH BUILT-IN 2 ELEMENTS M INI MOLD The 2SC4571 has b u ilt-in 2 tra n s is to rs w h ic h w e re d e v e lo p e d fo r UHF. PACKAGE DRAWINGS (U n it: m m ) FEATURES • H igh fT

2sc4571

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4571 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4571 is a low supply voltage transistor designed for UHF Units: mm OSC/MIX. 2.1 ±0.1 It is suitable for a high density surface mount assembly since the

nec 2501 LD 932

Abstract: nec 2501 LD 229 NEC 2501 LE 240 transistor c 839 nec 2501 LD
Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR juPA804T NPN SILICON EPITAXIALTRANSISTOR WITH BUILT-IN 2 ELEMENTS M INI MOLD The 2SC4571 has b u ilt-in 2 tra n s is to rs w h ic h w e re d e v e lo p e d fo r U HF. PACKAGE DRAW INGS (U n it: m m) FEATURES 2.1 ± 0.1

LM 337

Contextual Info: SGS-THOMSON LM237 LM337 THREE-TERMINAL ADJUSTABLE NEGATIVE VOLTAGE REGULATORS • OUTPUT VOLTAGE ADJUSTABLE DOWN TO Vref ■ ■ ■ . ■ . ■ ■ 1.5A GUARANTEED OUTPUT CURRENT 0.3%/V TYPICAL LOAD REGULATION 0.01 %/V TYPICAL LINE REGULATION CURRENT LIMIT CONSTANT WITH TEMPE­

NTE7470

Abstract: NTE746 NTE7454 NTE74LS63 NTE74LS55 NTE7460 NTE74H53 NTE74H54 NTE74H55 NTE74H60
Contextual Info: INTEGRATED CIRCUITS - TTL TRANSISTOR TRANSISTOR LOGIC NTE74H53 14-Lead DIP, See Diag. 247 Expandable AND/OR Invert Gate NTE74H54 14-Lead DIP, See Diag. 247 4-W ide AND/OR Invert Gate NTE7454 14-Lead DI P, See Diag. 247 4-W ide AND/OR Invert Gate Q v cc A r i

Contextual Info: ykiyjxivki 19-1193; Rev0; 4/97 16-Channel/Dual 8-Channel, Lo w -Lea kage , CMOS A n a lo g M u lt ip le x e r s _ F e a t u r e s ♦ <400£2 max On-Resistance ♦ <500ns Transition Time ♦ <10£2 On-Resistance Match ♦ <20pA NO-Off Leakage Current at +25 °C

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor VN 2406L 3 DRAIN N -C h an n el — Enhancem ent Motorola Preferred Device 1 SOURCE MAXIMUM RATINGS Unit Symbol Value D rain-Source Voltage V d SS 240 Vdc D rain-G ate Voltage V d GR 60 Vdc G ate-S ource Voltage