D 331 TRANSISTOR Search Results

philips bfq

Abstract: BFQ263 BFQ263A RK 100
Contextual Info: Product specification Philips S em iconductors - r & 3 ~ DESCRIPTION > 5 BFQ263; BFQ263A NPN 1 GHz video transistors • 5bE D PHILIPS IN TE RNATIONAL c 711062t. 0045b4û 331 « P H I N PINNING NPN silicon epitaxial transistor in a SOT5 TO-39 envelope with

lt 332 diode

Abstract: 4242 DM 4243 dm IRFF330 IRFF331 IRFF332 IRFF333 diode 331 t2235 QA-750
Contextual Info: 1 &£ D SILICONIX INC • Ö 2 5 4 7 3 5 GDlMflEl b ■ IRFF330/331/332/333 C T 'S ilico n ix Jm W incorporated N-Channel Enhancement Mode Transistors T TCJ-205AF - ^ - o q . BOTTOM VIEW PRODUCT SUMMARY PART NUMBER V BR|DSS IRFF330 400 1.0 3.5 IRFF331 350

Contextual Info: TE X AS I NS TRUM E NTS - P RO DUCTION D ATA Tiva TM4C1230E6PM Microcontroller identical to LM4F111E5QR D ATA SH E E T D S -T M 4C 1230 E 6 P M - 1 4 6 0 2 . 2 6 4 8 S P M S 331 C o p yri g h t 2 0 07-2013 Te xa s In stru me n ts In co rporated Copyright

sdt9303

Abstract: 2n3441 2N3441 JAN 2N3772 SOLITRON
Contextual Info: S0LITR0NDEVICES INC 8 3 6 8 6 0 2 SOL ITRON D E V I C E S DEI fl3bflL,D2 00057ÖBS i» INC 95D 02 78 2 T ' 3 3 - o / 3 P 1 is [^ [D y Tr ©Æ\TFÆ\[L@ J fw ’MDevices, trm Inc. SINGLE DIFFUSED l\IPI\l M E S A TRANSISTORS © ¿mw> M\PM DEVICE TYPE hpE @

C 331 Transistor

Abstract: transistor 331 331 transistor transistor C 331 y 331 Transistor transistor 331 8 of ic 331 transistor 331 p g060 NPN/transistor C 331
Contextual Info: LINEAR INTEGRATED CIRCUIT TBA 331 GENERAL PURPOSE The TBA 331 is an assembly of 5 silicon NPN transistors on a common monolithic substrate In a Jedec TO-116 14-lead dual in-line plastic package. Two transistors are internally connected to form a differential amplifier.

IRF3303

Abstract: OA 161 diode IRFF330 IRFF331 IRFF332 IRFF333
Contextual Info: - Standard Power MOSFETs File Number IRFF330, IRFF331, IRFF332, IRFF333 1893 N-Channel Enhancement-Mode Power Field-Effect Transistors 3.0A and 3.5A, 350V - 400V rD S o n = 1.00 and 1.50 N-CHANNEL ENHANCEMENT MODE Features: •

2N3773 equivalent

Abstract: transistor c113 c113 transistor c112 TRANSISTOR d 331 TRANSISTOR equivalent transistor B A O 331 2N6262 2N6262 transistor 331 al jan2n3772
Contextual Info: pia E>iy <mr /a u m ® C o n tr a n Devices. Inc MEDIUM VOLTAGE CHIP NUMBER NPN SINGLE DIFFUSED M ESA TRANSISTOR FORMERLY 31) CONTACT METALLIZATION Base. Emitter and Collector Solder Coated 95/5% lead/tin. ASSEM BLY RECOMMENDATIONS It is advisable that:

Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT21S230S_232S Rev. 1, 11/2012 RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs These 50 watt RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of 2110 to 2170 MHz.

AFT21S230S

Abstract: aft21s232s C5750X7S2A106M
Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT21S230S_232S Rev. 2, 3/2013 RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs These 50 watt RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of 2110 to 2170 MHz.

transistor h 331

Abstract: c 331 transistor 331 transistor switching transistor 331 phototransistor 650 nm transistor 331 d 331 Transistor Q62702-P1634 phototransistor 550 nm phototransistor peak 550 nm
Contextual Info: SMT Multi TOPLED SFH 331 Wesentliche Merkmale • SMT-Gehäuse mit rotem Sender 635 nm und Si-Fototransistor • Geeignet für SMT-Bestückung • Gegurtet lieferbar • Sender und Empfänger getrennt ansteuerbar • Geeignet für IR-Reflow Löten Features

transistor d-331

Contextual Info: SMT Multi TOPLED Lead Pb Free Product - RoHS Compliant SFH 331 Wesentliche Merkmale Features • SMT-Gehäuse mit rotem Sender (635 nm) und Si-Fototransistor • Geeignet für SMT-Bestückung • Gegurtet lieferbar • Sender und Empfänger getrennt ansteuerbar

8060 transistor

Abstract: 104 csk 8060-1G6 M8058-1G18 8060-1G12 1G22 d 317 transistor transistor 373 transistor c 373 1g45
Contextual Info: Data downloaded from http://www.anglia.com - the website of Anglia - tel: 01945 474747 Catalogue 1654741 Specialty Sockets Revised 1-04 Transistor Sockets 8058 & 8060 Series 8060-1G11 8060-1G6 FEATURES: PERFORMANCE SPECIFICATIONS: The 8058/8060 family of teflon sockets, with beryllium copper contacts,

Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT21S230S_232S Rev. 3, 3/2014 RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs These 50 W RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of 2110 to 2170 MHz.

transistor h 331

Abstract: D F 331 TRANSISTOR C 331 Transistor transistor d 331 d 331 Transistor transistor 331 p 331 transistor y 331 Transistor transistor 331 VQE 22 led
Contextual Info: SIEMENS SMT Multi TOPLED SFH 331 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Typ Type Bestellnummer Ordering Code SFH 331 Q62702-P1634 W esentliche Merkmale • Geeignet für Vapor-Phase Löten und IR-Reflow Löten

6852 d TRANSISTOR

Abstract: lt 6224 7805m te 330 61m L6064 SS769 m 9583 transistor 54676 SD1338
Contextual Info: H f i r i. ! Ê W tË C n JS G n rÊ Ê « Comm erce Drive Montgomaryvills, PA T ôi ; 21S 631_9840 18936-1013 S D 1332 RF & MICROWAVE TRANSISTORS UHF SMALL SIGNAL * HIGH F T - 5 . 5 GHz * V L R Y LO W NOISfc: « ALL GOLD METALLiZED * HfcHMfc I IC PACKAUc

transistor d 331

Abstract: D F 331 TRANSISTOR d 331 TRANSISTOR equivalent switching transistor 331 Q62702-P1634 phototransistor 650 nm phototransistor peak 550 nm transistor d 331 data c 331 transistor transistor C 331
Contextual Info: SMT Multi TOPLED SFH 331 Wesentliche Merkmale Features • SMT-Gehäuse mit rotem Sender 635 nm und Si-Fototransistor • Geeignet für SMT-Bestückung • Gegurtet lieferbar • Sender und Empfänger getrennt ansteuerbar • Geeignet für IR-Reflow Löten

Contextual Info: Mbö2?ll 00DÖ535 0^7 H DDP3310B ADVANCE INFORMATION Contents Page Section Title 4 4 5 5 1. 1.1. 1.2. 1.3. Introduction Main Features System Architecture System Application 6 6 6 6 6 7 8 8 9 9 9 10 10 12 12 12 13 13 15 16 16 16 17 18 18 18 19 19 19 20 20 20

TO205AD

Abstract: 2N3866 MOTOROLA TO-205AD MRF525 MRF309 MOTOROLA TO205AD MRF5174 MRF390 2N3866 2N4428
Contextual Info: IF PRODUCTS — BIPOLAR POWER TRANSISTORS continued CASE 79-02 TO-205AD (TO-39) CASE 145A-09 (.300” Stud) CASE 215-02 CASE 244-04 (.280" Stud) CASE 79-03 (TO-205 Type) CASE 305-01 (.204" Stud) CASE 305A-01 (.204” Pill) 3ASÊ 316-01 For UHF Applications

Contextual Info: B 32 9 -9 7 IF1331 N -C H A N N E L SILICO N JUNCTION FIELD-EFFECT TRANSISTOR LOW NOISE, HIGH GAIN AMPLIFIER Absolute maximum ratings at TA = 2 5'C Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation

Contextual Info: BSE D • Ö 53ti320 GG lb75S ' PNP Silicon High Voltage Transistor I S IP SIEMENS/ SPCLt SEMICONDS • • • • • Suitable for video output stages in TV sets High breakdown voltage Low collector-em itter saturation voltage Low capacitance Complementary type: BF 622 NPN

transistor B A O 331

Abstract: mje340 equivalent d 331 TRANSISTOR equivalent
Contextual Info: ¡S A M S U N G S E M IC O N D U C T O R I N C MJE340 14E 0 J | 7cl b tl l i f S 000770D fl NPN EPITAXIAL SILICON TRANSISTOR HIGH COLLECTOR-EMITT&R SUSTAINING VOLTAGE HIGH VOLTAGE GENERAL PURPOSE APPLICATIONS SUITABLE FOR TRANSFORMER Complementary to MJE350

SOT-227A

Abstract: BUV298 BUV298A BUV298AV BUV298V
Contextual Info: PHILIPS INTERNATIONAL HSE D Q 711002b 0031137 3 Q PHIN BUV298 V BU V298A(V) ^ SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-current, high-speed transistors, assembled in the isolated ISOTOP package; intended fo r use in inverters, converters and m otor control applications on 220 V to 380 V mains supply.

Contextual Info: warn P H O 'TO T R A N S IS T O R ?*, ¡-x PHI 04 PHOTO TRANSISTOR - N E P O C SERIES — The PH 104 is a photo transistor in a plastic molded package, and PACKAGE DIMENSIONS very suitable for a detector of a photo interrupter. in millimeters inches 5.0

2N5005 TO-59

Abstract: 2N5005
Contextual Info: Data Sheet No. 2N5005 Generic Part Number: 2N5005 Type 2N5005 Geometry 9702 Polarity PNP Qual Level: JAN - JANTXV REF: MIL-PRF-19500/512 Features: • • • • Silicon power transistor for use in high speed power switching applications. Housed in a TO-59 case.