D 331 TRANSISTOR Search Results

transistor h 331

Abstract: c 331 transistor 331 transistor switching transistor 331 phototransistor 650 nm transistor 331 d 331 Transistor Q62702-P1634 phototransistor 550 nm phototransistor peak 550 nm
Contextual Info: SMT Multi TOPLED SFH 331 Wesentliche Merkmale • SMT-Gehäuse mit rotem Sender 635 nm und Si-Fototransistor • Geeignet für SMT-Bestückung • Gegurtet lieferbar • Sender und Empfänger getrennt ansteuerbar • Geeignet für IR-Reflow Löten Features

transistor d-331

Contextual Info: SMT Multi TOPLED Lead Pb Free Product - RoHS Compliant SFH 331 Wesentliche Merkmale Features • SMT-Gehäuse mit rotem Sender (635 nm) und Si-Fototransistor • Geeignet für SMT-Bestückung • Gegurtet lieferbar • Sender und Empfänger getrennt ansteuerbar

8060 transistor

Abstract: 104 csk 8060-1G6 M8058-1G18 8060-1G12 1G22 d 317 transistor transistor 373 transistor c 373 1g45
Contextual Info: Data downloaded from http://www.anglia.com - the website of Anglia - tel: 01945 474747 Catalogue 1654741 Specialty Sockets Revised 1-04 Transistor Sockets 8058 & 8060 Series 8060-1G11 8060-1G6 FEATURES: PERFORMANCE SPECIFICATIONS: The 8058/8060 family of teflon sockets, with beryllium copper contacts,

Contextual Info: Mbö2?ll 00DÖ535 0^7 H DDP3310B ADVANCE INFORMATION Contents Page Section Title 4 4 5 5 1. 1.1. 1.2. 1.3. Introduction Main Features System Architecture System Application 6 6 6 6 6 7 8 8 9 9 9 10 10 12 12 12 13 13 15 16 16 16 17 18 18 18 19 19 19 20 20 20

E11751

Abstract: E14471 E8471 E14431 E11271 E14201
Contextual Info: “ZNR” Transient/Surge Absorbers Type D “ZNR” Transient/Surge Absorbers Type: Series: D E “ZNR” Transient/Surge Absorber, Series E, Type D features large surge current and energy handling capability for absorbing transient overvoltage in a compact size.

CSC460

Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS CSC460 TO-92 Plastic Package High Frequency And VHF Amplifier Mixer ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise DESCRIPTION

csc1906

Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON EPITAXIAL TRANSISTORS CSC1906 TO-92 Plastic Package VHF Amplifier Mixer, Local Oscillator. ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise

znr 471 varistor

Abstract: ZNR 471 ZNR 391 znr3 varistor znr 431 znr 270 ZNR 241 varistor SEC 471 10 znr 621 varistor znr e 471
Contextual Info: “ZNR” Transient/Surge Absorbers Type D “ZNR” Transient/Surge Absorbers Type: Series: D E “ZNR” Transient/Surge Absorber, Series E, Type D features large surge current and energy handling capability for absorbing transient overvoltage in a compact size.

p626

Abstract: IC P626 TLP626-1
Contextual Info: TLP626,-2,-4 GaAs IRED a PHOTO-TRANSISTOR PROGRAMMABLE CONTROLLERS AC/DC-INPUT MODULE TELECOMMUNICATION Unit in mm T h e T O S H I B A TLP626, -2 and -4 consist of two g a l l i u m ar s e n i d e infreared emitting diodes c onnected in inverse parallel, optic a l l y coupled

Contextual Info: Ö E B S b G S D G Ö 1 4 7 D bT3 SIEMENS PROFET BTS430K2 Smart Highside Power Switch Features • • • • • • • • • • • Product Summary Clamp of negative voltage at output V bb-V ouT Avalanche Short-circuit protection I4 b operation)

pnp matched pair

Abstract: NSVT30010MXV6T1G NST30010MXV
Contextual Info: NST30010MXV6T1G, NSVT30010MXV6T1G Dual Matched General Purpose Transistor PNP Matched Pair http://onsemi.com These transistors are housed in an ultra−small SOT563 package ideally suited for portable products. They are assembled to create a pair of devices highly matched in all parameters, eliminating the need

Contextual Info: ¥hl¡% H E W LE T T mL'nM P a c k a r d Avantek Products Thin-Film Cascadable Amplifier 2 to 1000 MHz Technical Data UTO/UTC 1011 Series Features Description Pin Configuration • Frequency Range: 2 to 1000 MHz The 1011 Series is a wideband, general-purpose thin-film bipolar

Contextual Info: TX Best seller with broad lineup and AC 2000 V breakdown voltage. FEATURES 1. 2,000 V breakdown voltage between contact and coil The body block construction of the coil that is sealed at formation offers a high breakdown voltage of 2,000 V between contact and coil, and 1,000 V between

sma3001

Abstract: SGF25
Contextual Info: SA\YO New Microwave Device Product Line P D C for P H S f o r t e r m ¡ n a ! 1.9 G H z te r m in a / ( 8 0 0 M H z ) P PW e r A m p . w * S P F2 020 A ¡ li t *I fitter SPM2001A * S MA 3Q A nt . S. W 2SC5534 Low > B uffer Amo «SMA30QI Noi«e Amp. Pupi«»«''

plasma display driver

Contextual Info: 0=11,1754 000310b T 'S Z A l- O ^ 4 • T II4 SN55S01E AC PLASMA DISPLAY DRIVER TEXAS • INSTR LIN/INTFC D2472, APRIL 1986-R EVISED DECEMBER 1989 J PACKAGE (TOP VIEW) 1 0 0-V Totem-Pola Outputs • Low Stand-by Pow er Consumption • All Outputs Contain Sink and Source Clam p

Contextual Info: OPA703 OPA2703 OPA4703 OPA 703 OPA704 OPA 703 O PA OPA 703 OPA2704 OPA4704 7 03 SBOS180A – MARCH 2001 CMOS, Rail-to-Rail, I/O OPERATIONAL AMPLIFIERS FEATURES DESCRIPTION ● RAIL-TO-RAIL INPUT AND OUTPUT ● WIDE SUPPLY RANGE: Single Supply: 4V to 12V

ERF150WJ

Abstract: CIMR-V7AZ44P00 CIMR-V7AZ41P50 ERF-150WJ JVOP-140 CIMR-V7AZ40P20 cimr-v7az40p70 CIMR-V7AZ40P40 OMRON 3G3MV JVOP-146
Contextual Info: Y203-EN2-02-Katalog.book Seite 329 Mittwoch, 24. Mai 2006 2:22 14 CIMR-V7AZ Varispeed V7 Sensorless vector in pocket size • • • • • • • • • • • • Nominal torque at 0.5 Hz Autotuning High carrier up to 14 khz Stop accuracy function.

RVD1

Abstract: 4255
Contextual Info: aTS20 LOW-VOLTAGE ULTRA-LOW-POWER TEMPERATURE SENSOR PRODUCT SPECIFICATION New Release Specification General Description Pin Configuration The aTS20 is a precision CMOS temperature sensor that provides a cost-effective solution for spaceconstrained applications. The output voltage ramp of

Contextual Info: SN75372 DUAL MOSFET DRIVER SLLS025A - JULY 19 Dual Circuits Capable of Driving High-Capacitance Loads at High Speeds D OR P PACKAGE TOP VIEW Output Supply Voltage Range up to 24 V 1A E 2A GND Low Standby Power Dissipation d e s c rip tio n The SN75372 is a dual NAND gate interface

N20X DIODE

Abstract: A35355 TA8923 ta8872 ta8903 TA8782 ta7833 transistor 123 TA7811 ta8825
Contextual Info: Reliability Update Table of Contents Overview . 1 Organization of the Update . 1

Contextual Info: OPA703 OPA2703 OPA4703 OPA 703 OPA704 OPA 703 O PA OPA 703 OPA2704 OPA4704 7 03 SBOS180A – MARCH 2001 CMOS, Rail-to-Rail, I/O OPERATIONAL AMPLIFIERS FEATURES DESCRIPTION ● RAIL-TO-RAIL INPUT AND OUTPUT ● WIDE SUPPLY RANGE: Single Supply: 4V to 12V

Contextual Info: HM67C932 S ri©S— Prelim in ary 8,192-Word x 9-Bit x 4-Row Static Cache RAM • DESCRIPTION The Hitachi HM67C932 is a high speed 288-kbit static cache RAM organized as 4-way set associative 8k x 9 or direct mapped 32k x 9 with 4-row selector for burst mode. By using HM67C932 with high

Contextual Info: a PRELIMINARY A m 2 7 L V 1 Advanced Micro Devices 131,072 x 8-Bit CMOS Low Voltage, One Time Programmable Memory D IS T IN C T IV E C H A R A C T E R IS T IC S • 3.3 V ± 0.3 V Vcc read operation Program voltage 12.75 ± 0.25 V ■ High performance at 3.3 Vcc

Varistor V471U

Abstract: v471u panasonic ZNR MOV znr V14 metal oxide varistor znr D471 TRANSISTOR equivalent znr varistor y znr v20 471 ZNR 471 V271U
Contextual Info: “ZNR” Transient/Surge Absorbers Type D “ZNR” Transient/Surge Absorbers D Series: V Type: ÒZNRÓ Transient/Surge Absorber, Series V, Type D is released through our continued research in ceramic material composition of ZnO varistor and manufacturing