D 1877 TRANSISTOR Search Results

TL170C

Abstract: TL170 L70C tesla switch Tesla sensor ERO Electronic irf540 TTL tesla NZ 70 tl170 hall tl170 hall effect
Contextual Info: TL170C SIUCON HAU-EFFECT SWITCH 0 3 4 0 0 , D E C E M B E R 1877. R fV tS C O A P M L 1 0 M • Magnetfc-FWd Sensing Hall-Effect Input • On-Off Hysteresis • Small SI*« • Solid-State Technology • Open-Coiector Output description The T L17 0C is s low-cost magnetteal ly operated

23A18

Contextual Info: Low Saturation Voltage Switching Transistors E-pack SMD E-pack (Lead type) ITO-220 Bipolar transistors HSV series Bipolar transistors Absolute Maximum Ratings Type No. Electrical Characteristics VcEO VcBO VcEO V ebo Ic Ib Pt Tstg Tj [V] [V] [V ] [A ] [A ]

SM 4151

Abstract: 2sc497
Contextual Info: Low Saturation Voltage Switching Transistors ITO-220 E-pack Lead type E-pack (SM D) Bipolar transistors Absolute Maximum Ratings Type No. Electrical C haracteristics VcEO (sus) (min) [V ] hFE VCE (sat) (max) [V ] V be (sat) (max) [V ] 0jc VCBO VCEO V ebo

Contextual Info: Low Saturation Voltage Switching Transistors E-pack S M D E-pack (Lead type) ITO-220 Bipolar transistors Absolute Maximum Ratings Electrical Characteristics VCEO h fE (sus) (min) [V ] (min) V cE V be 0jc fi too ts tf (sat) (sat) (max) (max) (max) (typ) (max) (max) (max)

Contextual Info: Surface-Mount Devices Power Transistors E-pack Bipolar transistors Absolute Maximum Ratings Type No. Electrica Characteristics VcBO VCEO V ebo Ic Ib Pt Tstg Tj [V ] [V ] [V ] [A ] [A ] [W ] fC ] [ t ] -5 -7 -1 .5 2SA1795 1796 - 4 0 1876 -8 0 1877 2SC4668 40

2sa1876

Contextual Info: Low Saturation Voltage Switching Transistors IT O -2 2 0 E-pack Lead type E-pack (SM D) L S V series Bipolar transistors Absolute Maximum Ratings Type No. E IA J Electrical Characteristics VcBO VOEO V ebo Ic Is Pt Tstg Tj [V ] [V ] [V ] [A ] [A ] [W ] [•c]

2SC466

Contextual Info: P o w e r T r a n s is to r s E-pack Bipolar transistors Type No. E fA J Absolute Maximum Ratings Electrical Characteristics VCEO V e bo Ic Ib Pt Tstg Tj [V ] [V ] [V ] [A ] [A ] [W ] [•c] C-c] [V ] No. 2SA179S 1790 1876 1877 2SC466& 1 4666 4878 4876 —5

cl 740

Abstract: tss405 PO65 7w RF POWER TRANSISTOR NPN PH1600
Contextual Info: n,n/A-con p h asE D o ÜDDDSbô 1T7 • HA P T - 33-01 M /A -C O M PH I, IN C . 1742 CRENSHAW BLVD. TORRANCE, CALIFORNIA 90501 213 320-6160 TWX 910-349-6651 FAX 213-618-9191 M/A-COM PHI, INC. PRELIMINARY DATA SHEET BIPOLAR NPN RF POWER TRANSISTOR FEATURES

e-pack

Abstract: 2SK1861 2SK1195 F05B23VR
Contextual Info: Bipolar transistors Absolute Maximum Ratings Type No. lliliM S lii» I ä ä S ä 1876 È èÊ ë ÊÊÈîM iÎ ilïlilÈ V cbo VCEO V ebo Ic Ib Pt Tstg Ti sus (min) [V ] [V ] [V ] [A ] [A ] [W ] C-c] [°G ] [V ] -6 0 iÎ ï — 5 -4 0 L -8 0 60 7 40 7 100

smd transistor P2D

Abstract: p2d smd smd code p2d PMBTA92 smd transistor marking PA MARKING CODE SMD IC smd P2D PMBTA93 P2d MARKING CODE
Contextual Info: • bb53'ì31 □□2 Sa ciö 12Ö ■ APX N AMER PHILIPS/DISCRETE PMBTA92 PMBTA93 b?E T> SILICON EPITAXIAL TRANSISTORS P-N-P transistors in a m icrominiature SMD plastic envelope intended fo r surface mounted applications. They are prim arily intended fo r use in telephony and professional communication equipment.

Contextual Info: bbS3^31 DDaSa^fi 126 • APX N AUER PHILIPS/DISCRETE PMBTA92 PMBTA93 b?E » 7 V SILICON EPITAXIAL TRANSISTORS P-N-P transistors in a m icrominiature SMD plastic envelope intended fo r surface mounted applications. They are prim arily intended fo r use in telephony and professional communication equipment.

TO-92variant

Contextual Info: Philips Semiconductors PowerMOS transistors Package outlines PACKAGE OUTLINES Package Surface-mount SOT23 SOT54 TO-92 SOT54variant (TO-92variant) SOT78 (TO-220AB) yes no no Page 1870 1871 1872 SOT89 no yes 1873 1874 SOT96-1 (S08) SOT137-1 (S024) S O U 86 (T0-220 exposed tabs)

SGSP256

Abstract: SGSP356 SP156 sgsp254 sgsp354 SGSP154
Contextual Info: S G S-THOMSON D7E D | ÏTSTSB? 0017630 b | / J 3 C ~ J r Î3 3 5 D 7 ^ 3 9 -0 7 SGSP154 /155 /156 SGSP254/255/258 SGSP354/355/356 ^-CHANNEL POWER MOS TRANSISTORS HIGH SPEED SW ITCHIN G APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Power-Mos field

2SC1871

Abstract: n 1895 1878 TRANSISTOR 2SA893
Contextual Info: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

H0A1877

Contextual Info: H 0A 1877 Transmissive Sensor FEATURES • Choice of phototransistor or photodarlington output • Wide operating temperature range -55“C to +100”C • 0.50 in.(12.7 mm) high optical axis position • 0.375 in.(9.52 mm) slot width DESCRIPTION The HOA1877 series consists of an infrared emitting

H0A1877

Abstract: HOA1877-003 LC60
Contextual Info: H 0A 1877 Transmissive Sensor FEATURES • Choice of phototransistor or photodarlington output • Wide operating temperature range -55°C to +100°C • 0.50 in.(12.7 mm) high optical axis position • 0.375 in. (9.52 mm) slot width INFRA-47.TIF DESCRIPTION

465B

Abstract: A114 A115 AN1955 JESD22 MRF6S18140HR3 MRF6S18140HSR3 Nippon capacitors Nippon chemi
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S18140H Rev. 1, 12/2008 N - Channel Enhancement - Mode Lateral MOSFETs MRF6S18140HR3 MRF6S18140HSR3 LIFETIME BUY Designed for N - CDMA base station applications with frequencies from 1805 to 1880 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L

SN74251

Abstract: sn74ls251n
Contextual Info: SN54251, SN54LS251 SN54S251, SN74251, SN74LS251, TIM9905 , SN74S251 DATA SELECTORS/MULTIPLEXERS WITH 3-STATE OUTPUTS SDLS085 – DECEMBER 1972 – REVISED MARCH 1988 Copyright  1988, Texas Instruments Incorporated PRODUCTION DATA information is current as of publication date.

Contextual Info: {Sì H A R R IS CDP1877 S E M I C O N D U C T O R Q 7 7 ^ ^ Programmable Interrupt Controller PIC February 1992 Features Description • Compatible with CDP1800 Series The CDP1877 and CDP1877C are programmable 8-level interrupt control­ lers designed for use in CDP1800 series microprocessor systems. They

PowerMOS Transistors

Abstract: 075E05 MS-012AA SO24 SSOP16 SSOP24
Contextual Info: Philips Semiconductors PowerMOS transistors Package outlines PACKAGE OUTLINES Package SOT23 SOT54 TO-92 SOT54variant (TO-92variant) SOT78 (TO-220AB) SOT89 SOT96-1 (SO8) SOT137-1 (SO24) SOT186 (TO-220 exposed tabs) SOT186A (TO-220) SOT223 SOT226 (low-profile TO-220)

BPSK MODULATORS raised cosine

Abstract: Minimum shift keying modulator "AN-899"
Contextual Info: AN-899 Operating and Evaluating Quadrature Modulators for Personal Communication Systems National Semiconductor Application Note 899 Wireless Communications ABSTRACT In comparison, for a quadrature modulator information is modulated onto a carrier with full freedom to manipulate the

Contextual Info: C M O S LSI ISA\YO LC33864P-80, M-70/80/10 512 K 65536 w ords x 8 bits P seudo-S R A M Overview The LC33864 series is composed of pseudo static RAM that operate on a single 5 V power supply and is organized as 65536 words x 8 bits. By using memory cells each

c4460

Abstract: d1651 d1047 k d1047 B817 C2621 D1650 B1269 c4106 D895
Contextual Info: SA\YO ^ Q u i c k S e 1 e c t i o n G u i d S P A CEO I > < V 1 5 1 8 2 K 11 K5 9 K15 K2 1 K3 1 K4 0 3 1 6 78 2 5 4 A 11 C28 C2 9 K5 4 77 39 99 4 2 5 Type T ransistors 3 4 «¡D a rlin g to n 5 8 mA ) 1 2 K4 2 7 K4 4 4 5 K546 K7 7 2 K2 2 7 0 3 K3 0 4

Ericsson AB PGR 20312

Abstract: DFB ea InGaAs APD, 10 Gb/s, -30 dBm 20312 pgr optical supervisory channel 10 gb laser diode Ea 1530 A mini link ericsson Ericsson Power Modules stm-64 dfb
Contextual Info: Ericsson Microelectronics Optoelectronic Products Ericsson is a world-leading supplier in the fast growing and dynamic telecommunications and data communications industry; offering advanced solutions for mobile and fixed networks and terminals. Our products and solutions meet communications needs in the home and