D 1481 N 65 T Search Results

BB3581

Abstract: HIGH-VOLTAGE OPERATIONAL AMPLIFIER
Contextual Info: T EL E DY N E COMPONENTS 3bE D 0^17bQ2 00Q7bH2 4 «TSC WTELEDYNE COMPONENTS 1481 OPERATIONAL AMPLIFIER — HIGH-VOLTAGE FEATURES GENERAL DESCRIPTION • ■ ■ ■ ■ The 1481 is a high-voltage operational amplifier capable of operating with supply voltages as high as +75V or as low

1481P

Contextual Info: fax id: 2006 CYM1471 CYM1481 1024K x8 SRAM Module 2048K x 8 SRAM Module Feat u res • High-d ensity 8-/16-megabit S R A M m o d u les • High-speed C M O S S R A M s — A c c e s s t i m e of 70 n s • L o w active power are constructed from eight 1471 or sixteen (1481) 128K x 8

PS08

Abstract: 100C CYM1471 CYM1481
Contextual Info: fax id: 2006 i , *" : -:V:V:V:V:V:Tÿ:- : i ^ :^ ; ^3»* i ; i M m i : M M :i : i i CYM1471 CYM1481 ^ i i i i i i yy c y p r e s s 1024K x 8 SRAM Module 2048K x 8 SRAM Module Features • High-density 8-/16-megabit SRAM modules • High-speed CMOS SRAMs — Access tim e of 70 ns

Contextual Info: fax id: 2006 «f CYM1471 CYM1481 c y pr es s 1024K x 8 SRAM Module 2048K x 8 SRAM Module Features • High-density 8-/16-megabit SRAM modules • High-speed CMOS SRAMs — Access tim e of 70 ns • Low active power are constructed from eight 1471 or sixteen (1481) 128K x 8

1N4148 JANTX

Abstract: DIODE LN4148 1N4148 JANTXV 1N4148 JAN 1n4148 unitrode 1N4148-1 UNITRODE in4148 JANTXV 1N4148 LN4148 diode 1N4148
Contextual Info: COMPUTER DIODE JAN, JANTX, 1N914 JAN, JANTX, JANTXV 1N4148 JAN, JANTX, JANTXV 1N4148-1 General Purpose Switching FEATURES • Metallurgical Bond • Qualified to MIL-S-19500/116 • Planar Passivated Chip • DO-35 Package • Non-JAN Available DESCRIPTION

75176a

Abstract: 75179 LTC1481 diode 1481 75173 LTC1481C LTC1481CN8 LTC1481I LTC485
Contextual Info: LTC1481 Ultralow Power RS485 Transceiver with Shutdown U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO Low Power: ICC = 120µA Max with Driver Disabled Drivers/Receivers Have ±10kV ESD Protection 1µA Quiescent Current in Shutdown Mode

Contextual Info: LTC1481 Ultralow Power RS485 Transceiver with Shutdown FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ U ■ DESCRIPTIO Low Power: ICC = 120µA Max with Driver Disabled Drivers/Receivers Have ±10kV ESD Protection 1µA Quiescent Current in Shutdown Mode

Contextual Info: CYM1471 CYM1481 CYPRESS SEMICONDUCTOR 1024K x 8 SRAM Module 2048Kx 8 SRAM Module Features F unctional D escription • High-density 8-/16-megabit SRAM modules T he CYM1471 an d CYM 1481 are highperform ance 8-m egabit and 16-megabit static R A M m odules organized as 1024K

Contextual Info: CYM1471 CYM1481 CYPRESS SEMICONDUCTOR 1024K X 8 SRAM Module 2048K X 8 SRAM Module Features Functional Description • High-density 8-/16-megabit SRAM modules • High-speed CMOS SRAMs — Access time of 85 ns • Low active power — 605 mVY max. , 2M x 8

Contextual Info: y CYM1471 CYM1481 1024KX 8 SRAM Module 2048K X 8 SRAM Module CYPR ESS Features Functional Description • High-density 8-/16-megabit SRAM modules • High-speed CMOS SRAMs — Access time of 85 ns • Low active power — 605 mW max. , 2M x 8 • Double-sided SMD technology

Contextual Info: CYPRESS 2S0Rbt.S fc>5E D SEMI CONDUCTOR 0010 0 7 5 7ÖM • ICYP CYM1471 CYM1481 r^ Y p p trc c 1024K x 8 SRAM Module 2048K x 8 SRAM Module SEMICONDUCTOR Features Functional Description • High-density 8-/16-megabit SRAM modules T he CYM1471 and CYM1481 are highperformance 8-megabit and 16-megabit

Contextual Info: CUSTOMER DRAWING PART NUMBER 010 MAX C U T - O F F 2 3000H 60A 3000H 60AB 3000H 60AC REV P/N: 3000H 60A/ Q.C. STAMP FINISH MATERIAL . 0 2 0 ± .001 AK P R E T 1N N E D YES NONE YES THK BRASS S IL V E R PLATE YES NOTES: 1. TO MATE WI TH . 250 X . 0 3 2 MALE TAB.

Contextual Info: TUSONIX TUSONIX STYLE NUMBER 865 835 805 855 875 815 845 825 M A X IM U M D IA M E T E R D 225/571 275/6 99 344/8 74 420/10 67 475/12.07 .575/1481 .655/16 64 720/18 29 L E A D S P A C IN G (S ) 200/508 250/635 .250/6.35 250/635 250/6.35 375/952 375/9.52

AD9615

Contextual Info: ' 'I o ÜI J Ultrafast, Precision ANALOG ► DEVICES A 05764799 •■ I 'f 1 _ IB ■ flNHHNÊI ■ n FEATURES Low Distortion Small-Signal Bandwidth 200MHz Full Power Bandwidth 190MHz Settling: 13ns to 0.1% Offset Voltage ±0.25mV; 3 jiV/0C Bias Current ±500nA; 20nA/°C

LS 2027

Contextual Info: " T M l-« SIEMENS AKTIENGESELLSCHAF M7E 1 • Lumineszenzdioden Light Emitting Diodes E m is s io n s fa rb e T yp e 0E3SbDS 0Q2b734 2 «SIEfi ^■peak E m issio n c o lo r G eh a use fa rb e Iv 2cp* B e s te lln u rrm e r C a s e c o lo r / r = 10m A)

2n1486

Abstract: 2n3773 power Amplifier 2N6179 431 regulator 2N3772 40347 4503 MOSFET BUX18 dc chopper circuit 2N3053
Contextual Info: APPLICATION INFORMATION. . . Power Types [N -P-N & P-N-P] fo r In verter/S w itch in g Regulator Service Frequency Range 60 Hz to 50 kHz Peak Voltage Required Up to 0 .2 A 0 .2 to 1 A 10 to 60V 2N3053 2N4037 2N5321 2N5323 2N6179 2N6181 60 to 150V 2N1486 2N2102

Contextual Info: S PLB30A SP 1120 Dots Data Bank Preliminary JUL. 25, 2001 Version 0.3 SUNPLUS TECHNOLOGY CO. reserves the right to change this documentation without prior notice. Information provided by SUNPLUS TECHNOLOGY CO. is believed to be accurate and reliable. However, SUNPLUS TECHNOLOGY CO. makes no warranty for any errors which may appear in this document.

Contextual Info: SCIENTIFIC/ MINI-CIRCUITS M'lE D • aObflflll D D D m i 3 3ET ISCC surface m ount 7 4 / F r e q u e n c y M ix e rs _ LEVEL Models _ 1 ' 7 + 7 dBm LO, up to +1 dBm RF SCM-2500 sra-2400 TFM-2400 mixer conversion loss and isolation RF MHz LO MHz Conversion Loss

TL 1838

Abstract: ITT 2222 A Mitel Semiconductor process flow to design a full 18*16 barrel shifter design pic 1840 ATS 16Mhz MITEL CLA full 18*16 barrel shifter design
Contextual Info: CLA90000 SERIES j j j j ivilTEL HIGH DENSITY CMOS GATE ARRAYS s b m Sc o n â î c t o r DS4375 - 2.0 April 1997 INTRODUCTION BENEFITS The CLA90000 family of gate arrays from Mitel Sem icon­ ductor consists of 14 fixed-size arrays with the option of building optimized arrays with up to 1.1 million gates. This

USART 8251 interfacing with 8051 microcontroller

Abstract: full 18*16 barrel shifter design 18*16 barrel shifter design USART 8251 USART 8251 expanded block diagram 8251 UNIVERSAL SYNCHRONOUS ASYNCHRONOUS RECEIVER P4QFP100-GH-1420 interfacing 8051 with ppi USART 8251 interfacing M8490 scsi
Contextual Info: CLA90000 Series High Density CMOS Gate Arrays DS5500 ISSUE 2.0 INTRODUCTZarlinkION BENEFITS The CLA90000 family of gate arrays from Zarlink Semiconductor consists of 14 fixed-size arrays with the option of building optimized arrays with up to 1.1 million gates. This

microprocessors interface 8086 to 8251

Abstract: USART 8251 interfacing with 8051 microcontroller to design a full 18*16 barrel shifter design USART 8251 18*16 barrel shifter design microprocessors architecture of 8251 USART 8251 expanded block diagram cqfp100 P2QFP100-GH-1420 full 18*16 barrel shifter design
Contextual Info: CLA90000 SERIES HIGH DENSITY CMOS GATE ARRAYS DS4375 - 2.0 April 1997 INTRODUCTION BENEFITS The CLA90000 family of gate arrays from Mitel Semiconductor consists of 14 fixed-size arrays with the option of building optimized arrays with up to 1.1 million gates. This

ITT 2222 A

Abstract: itt 2222
Contextual Info: Si GEC P L E S S E Y APRIL 1997 S E M I C O N D U C T O R S CLA90000 SERIES HIGH DENSITY CMOS GATE ARRAYS INTRODUCTION BENEFITS The CLA90000 family of gate arrays from GEC Plessey Semiconductors GPS consists of 14 fixed-size arrays with the option of building optimized arrays with up to 1.1 million

Contextual Info: □PM DPS8645 Dense-Pac Microsystems, Inc. 64K X 4 CMOS SRAM MODULE O NOT RECOMMENDED FOR NEW DESIGNS DESCRIPTION: The DPS8645 is a 64K X 4 high-speed, low-power static RAM module comprised of four 64K X 1 monolithic SRAM's, and decoupling capacitors surface mounted on a single inline thick film ceramic

Contextual Info: Power Transistors Hometaxial-Base n-p-n Type Selection Charts h“FE A V CE V Temp.—°C 25 CD 'c V CEV^SUS* V 40 40 40 40 55 55 55 65 140 60 60 60 60 100 100 100 90 160 20-60 35-100 20-80 25-100 20-60 35-100 35-100 30-125 30-125 0.2 0.2 0.1 0.45 0.2 0.2