D 1413 TRANSISTOR Search Results

203B

Contextual Info: HARRIS S E MI C O N D SECTOR E7E D H 43QSS71 OGEGSS4 7 HIKAS Power RCA9203A, RCA9203B 1413 • T '3 3 - 2 ^ rile Number 4-Ampere N -P -N Darlington Power Transistors

mPD780208

Abstract: TV LED TCL 32F PD78P0208 uPD780208 delay line ms-26 TCL-10 P20P2 TCL25-TCL27 mPD78P0208GF-3BA
Contextual Info: mPD780208 SUBSERIES 8-BIT SINGLE-CHIP MICROCOMPUTER PRELIMINARY mPD780204 mPD780205 mPD78P0208 1994 Document No. IEU-1413 (O. D. No. IEU-885) Date Published February 1995 P Printed in Japan NOTES FOR CMOS DEVICES 1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS

Contextual Info: SANYO SEMICONDUCTOR CO R P 12 E D | 7m U7h 0003071 ~T~lS'tn- o~l CMOS LSI 1413 D TM F/P U LSE Sw itchable Dialer The LC7363f7363M are DTMF/ODTPUT-PULSE dialer CMOS LSIs with redial function for use in. pushbutton telephones. The LC7363 is packaged in a 22-pin shrink

CI 4096

Abstract: MAX12005 MAX12001 MAX1200 MAX1200ACMH MAX1200AEMH MAX1200BCMH MAX1200BEMH MAX1201 MAX1205
Contextual Info: 19-1413; Rev 0; 12/98 +5V単一電源1Msps、16ビット セルフキャリブレーションADC 概要 _ 特長 _ MAX1200は最大変換レート1Mspsの16ビットモノリ シックA/Dコンバータ ADC です。このCMOS集積回路

2SC1413

Abstract: c 1413 a 2sc1413a 1413A
Contextual Info: 2SC1413, 2SC1413A L 2SC 1413,1413A NPN POWER TRANSISTORS High Voltage Power Switching and TV Horizontal Deflection Output Applications DIM A B C D E F G H J K L M MIN MAX 39,37 22.22 8,50 6.35 1.09 0,96 1,77 29,90 30,4 10,69 11,18 5.72 5.20 16,64 17,15 11,15 12,25

transistor K 1413

Abstract: 1412D 1411d D 1413 transistor C1413BD 1413B 1416P ULN-2 1413BP MC 1413P
Contextual Info: MC1411,B MC1412,B MC1413,B MC1416,B MOTOROLA M SEM ICO N D U CTO R TECHNICAL DATA HIGH VOLTAGE, HIGH CURRENT DARLINGTON TRANSISTOR ARRAYS PERIPHERAL DRIVER ARRAYS T h e s e v e n N P N D a r lin g t o n c o n n e c t e d t r a n s i s t o r s in th e s e a r r a y s

MMT75

Abstract: MMT76 9.1 V
Contextual Info: MOTOROLA SC 6367255 -CDIODES/OPTO} MOTOROLA SC 34 b3b75S5 DIODES/OPTO 34C 0030204 38204 D MICRO-T (continued) MMT75 MMT76 — PNP — NPN GENERAL PURPOSE TRANSISTORS • designed for general-purpose switching and amplifier applications and for complementary circuitry where highdenslty packaging is required.

Contextual Info: MOTOROLA SC 6367255 34 -CDIODES/OPTO} MOTOROLA SC b3b75S5 0030204 7 DIODES/OPTO 34C 38204 D MICRO-T (continued) MMT75 — PNP MMT76 — NPN GENERAL PURPOSE TRANSISTORS • designed for general-purpose switching and amplifier applications and for complementary circuitry where highdensity packaging is required.

transistor K 1413

Abstract: D 1413 transistor package TO8-16 transistor a 1413 mil-std-202 method 112
Contextual Info: PRECISION BULK METAL  FOIL TECHNOLOGY TO - HERMETIC NETWORK SERIES Transistor Outline Hermetic Resistor Networks FEATURES •Resistance Range: 5Ω to 80KΩ •Tolerance Tightest : Absolute to ±0.005%, Match to 0.002% •LoadLife Stability: ±0.025% Max∆R under full rated power @+70°C for 2000 hours

D 1413 transistor

Abstract: transistor a 1413 pnp DARLINGTON TRANSISTOR ARRAY STA434A STA471 high hfe transistor sib1044d npn 8 transistor array Transistor H03
Contextual Info: Surface Mount Transistor Arrays SD Series PNP darlington transistor array SDA01 -6 0 15.16 13 .1 4 11.12 Fh : 4 kU typ 15,16 SDC01 in I R 2 J l OOütyp 13^14 3 -. 9, 10 |_ 11.12 5o f . ( — 2.5A pulse) 2000 to 12000 — 1.4 max o Relays 0 S olenoids j 9, 10

2SD2133

Abstract: 2SB1413
Contextual Info: Power Transistors 2SD2133 2SD2133 Silicon NPN Epitaxial Planar Type • P a c k a g e D im e n s io n s A F P o w e r A m p lifie r, D riv e r C o m p le m e n ta ry P a ir w ith 2 S B 1 4 1 3 ■ F e a tu re s • L ow c o lle c to r-e m itte r s a tu ra tio n v o ltag e V cec^ d

Contextual Info: Power Transistors 2SD2133 2SD2133 Silicon NPN Epitaxial Planar Type • Package Dimensions AF Power Amplifier, Driver Complementary Pair with 2SB1413 ■ Features U n it : mm • L ow c o lle c to r-e m itte r sa tu ra tio n v o lta g e V cecho • 15W o u tp u t in co m p le m e n ta ry p air w ith 2SB 1413

2N404

Abstract: 2N508 2N414 same 2N1305 2N1415 2N525 2N527 GE 2N526 2N396 2N1924
Contextual Info: 281 282 GERMANIUM SIGNAL TRANSISTORS B V ce r fh lb Package Outline No. Specification Sheet Ho. See 2N525. 281 20.10 See 2N524. 281 20.10 See 2N508, 2 N 1 17 5 and 2 N 1 41 3 series. 281 80.15 Pr Max. mW @ 1V, 20mA (iiA) (V) 2N43A’ 34-65 1.3 30 16 45 240

D 1413 transistor

Abstract: NTE74191 transistor K 1413 32 bit carry select adder code transistor a 1413 NTE74LS191 NTE74190 NTE74LS190 5.1 diagram NTE74
Contextual Info: 52E D N T E ELECTRONICS INC b M B l B S 6 O D Q S im TÔT INTE g iT B S T T T E TRANSISTOR TRANSISTOR LOGIC) Look-Ahead Carry Generator 16-Lead DIP,See Dlag. 249 Dual Carry/Save Full Adder T - 4 3 ' Û' 14-Lead DIP,SeeDlag.247 Blnary-to-BCD Code 16-LeadDIP,SeeDlag.249

D 1413 transistor

Abstract: k 1413 FET D 1414 transistor transistor a 1413 transistor K 1413
Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET PHN1018 SYMBOL FEATURES QUICK REFERENCE DATA • 'Trench' technology • Low on-state resistance • Fast switching • Stable off-state characteristics • High thermal cycling performance

BUW32

Abstract: BUW132 BUW132H BUW132A IEC134 L100 132h
Contextual Info: bbS3T3i DEVELOPMENT DATA c ia n c ia i i • BUW132 SERIES' This data sheet contains advance in fo rm a tio n and specifications are subject to change w ith o u t notice. N AMER PHILIPS/DISCRETE ESE D ^ T -S 3 -/5 NPN SILICON POWER TRANSISTORS High-voltage, glass-passivated power transistors in SOT93 envelope, intended for use in very fast

P77-P70

Contextual Info: Section 14 Electrical Specifications 14.1 Absolute Maximum Ratings Table 14-1 lists the absolute maximum ratings. Table 14-1. Absolute Maximum Ratings Preliminary Item Symbol Rating Unit Supply voltage Vcc -0 .3 to +7.0 V Vpp -0 .3 to +13.5 V Programming voltage

Contextual Info: B Transistor Arrays SD Type No. 2 Ri R 20 4 ' *f 1 S D A 01 Voltage Ratings <V) Equivalent Circuit t * r 6 ' „-T . 3* r * ; r r Vce(Mi' and other Functions/Appiications (V) P N P D a rlin g to n tra n s is to r a rra y i '• 13)14 hFE and other 8 1 „* 1*

Contextual Info: MOTOROLA Order this document by MJW21192/D SEMICONDUCTOR TECHNICAL DATA NPN MJW21192 Complementary Silicon Plastic Power Transistors PNP Specifically designed for power audio output, or high power drivers in audio amplifiers. • • • • DC Current Gain Specified up to 8.0 Amperes at Temperature

655E-6

Abstract: fp45n ppm pspice 136E3 518E-7
Contextual Info: H A R R RFG45N06 RFP45N06 I S S E M I C O N D U C T O R January 1994 45A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs MegaFETs Features Packaging JEDEC TO-220AB TOP VIEW • 45A,60V • rDS(ON) ~ 0.028U • Temperature Compensating PSPICE Model

EP 1408

Abstract: 2SA745 2SA755 2SA748 2SA751 2SA752 2SA754 2SC1391
Contextual Info: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

2SD1397

Abstract: 2SC2271 transistor 2SC2271 2S01397 ic 30359
Contextual Info: SANYO SEMICONDUCTOR CÔRP ISE D I 7 ^ 707 ^ 000SD7S T ' 3 3 - / 3 2SD1397« N PN Triple Diffused Planar Silicon Transistor 2022 Color TV Horizontal Deflection Output Applications with Damper Diode 1223C Features: . High breakdown voltage and high reliability.

2N19A

Abstract: 2N1310 2n1408 2N1305 2N1100 2N404 transistor 2N1008 npn germanium 2N1378 2N1924
Contextual Info: T - Z 7 - O I discrete devices semitron hot line TOLL FREE NUMBER 800-777-3960 alloy-junction germanium transistors ' T t i n t h i a i : Polarity v 2843A Maximum Power <W Maximum V) VCB VCE Typical G lin HFE Frequency Reip. (MHz) Gau P o h iity Î v t V f * 5" ^

i354

Abstract: 2N7222 IRFM440 IRFM440D i-354
Contextual Info: Data Sheet No. PD-9.492C INTERNATIONAL RECTIFIER I& R REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFM440 SN7SSS JANTX2N7222 JANTXV2N7222 N-CHANNEL [REF: MIL-S-1S500/596] Product Summary 500 Volt, 0.85 Ohm HEXFET The HEXFET® technology is the key to International