2N119 Search Results

2SC 9012

Abstract: 2N119 9012 transistor ScansUX7
Contextual Info: TYPE 2N119 N-P-N G R O W N -J U N C T IO N SILICON TR A N S IS TO R BU LL ET IN NO. DL-S 58899, M AR C H 1958 3 6 to 8 6 beta spread SpecificaHy designed for high gain a t high temperatures mechanical data Welded case with glass-to-metal hermetic seal between case and leads. Approximate weight is 1.7 grams.

2N1194

Contextual Info: 2N1194 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)25ã V(BR)CBO (V)40 I(C) Max. (A)200m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)100þ I(CBO) Max. (A)15u @V(CBO) (V) (Test Condition)25 h(FE) Min. Current gain.125 h(FE) Max. Current gain.600

Contextual Info: 2N1197 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)70 V(BR)CBO (V)70 I(C) Max. (A)100m Absolute Max. Power Diss. (W)350m Maximum Operating Temp (øC)200õ I(CBO) Max. (A)250n @V(CBO) (V) (Test Condition)20 V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 2N1191 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)25ã V(BR)CBO (V)40 I(C) Max. (A)200m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)100þ I(CBO) Max. (A)15u @V(CBO) (V) (Test Condition)25 h(FE) Min. Current gain.20 h(FE) Max. Current gain.80

Contextual Info: 2N1199 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)20 I(C) Max. (A)100m Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)150þ I(CBO) Max. (A)700n @V(CBO) (V) (Test Condition)10 V(CE)sat Max. (V).25 @I(C) (A) (Test Condition)10m

2N1192

Abstract: C179H
Contextual Info: mm SFT1192 SOLID STATE DEVICES, INC 14849 Firestone Boulevard • La Mirada,CA 90638 Phone: 714 670-SSDI (7734) - Fax: (714) 522-7424 Ms er’sOata 0.5 AMP 500 VOLTS PNP TRANSISTOR Sheet FEATURES: Eutectic Die Attach, Hermetic Package Superior to 2N1192

2N1195

Abstract: Germanium power
Contextual Info: AMENDMENT 1 19 July 1968 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, LOW POWER TYPE 2N1195 dated 29 June 1967, and is mandatory for use by all Departments and Agencies of the Department of Defense. Page .5 Table I, Group A Inspection, Subgroup 3:

2N117

Abstract: 2N118 2N119
Contextual Info: I MI L- S-19500/2B AMENOMENT 1 23 February 1981 ● MILITARY SEMICONDUCTOR OEVICE, TYPES SPECIFICATION TRANSISTOR, 2N118, 2N117, NPN, ANO SILICON, LOW POMER 2N119 This amendment forms a part of Military Specification MI L-s-19500/z B, dated 14 June 1968, and is approved for use by all Departments

2N117

Abstract: 2N118 2N119 2N11R Cmd 2026 B-IA8 Transistor hall 2S50 9w9w knb 1532
Contextual Info: MIL-S-19500/2B U June 196S SUpEWEDfNG MfL-S-19500/2A 28 May 1963 MfL-S-19500/35B NAVY 3 January 1966 (See 6.2. ) MILITARY SEMICONDUCTOR SPECIF’fCATfON DE VfCE, TRANSISTOR, TYPES 2N117. 2N118, NPN, .WLICON, AND 2N119 LOW-POWER This specification ie ma.~tory

2N119

Contextual Info: TYPE 2N119 N-P-N GROWN-JUNCTION SILICON TRANSISTOR B U L L E T I N NO. D L -S 58899, M A R C H 1958 36 to 8 6 beta spread Specifically designed for high gain at high temperatures m echanical d a ta Welded case with glass-to-metal hermetic seal between case and leads. Approximate weight is 1.7 grains.

Contextual Info: 2N119 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)45 I(C) Max. (A)25m Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)2.0uØ @V(CBO) (V) (Test Condition)30 V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 2N1198 Transistors Ge NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)25 V(BR)CBO (V)25 I(C) Max. (A)75m Absolute Max. Power Diss. (W)75m Maximum Operating Temp (øC)85þ I(CBO) Max. (A)1.5u @V(CBO) (V) (Test Condition)15 h(FE) Min. Current gain.17 h(FE) Max. Current gain.90

Contextual Info: 2N1196 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)70 V(BR)CBO (V)70 I(C) Max. (A)100m Absolute Max. Power Diss. (W)350m Maximum Operating Temp (øC)200õ I(CBO) Max. (A)250n @V(CBO) (V) (Test Condition)20 V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 2N1192 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)25ã V(BR)CBO (V)40 I(C) Max. (A)200m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)100þ I(CBO) Max. (A)15u @V(CBO) (V) (Test Condition)25 h(FE) Min. Current gain.40 h(FE) Max. Current gain.135

Contextual Info: 2N1190 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)30ã V(BR)CBO (V)45 I(C) Max. (A)500m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)100õ I(CBO) Max. (A)50u @V(CBO) (V) (Test Condition)45 h(FE) Min. Current gain.100 h(FE) Max. Current gain.

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

M-8124

Abstract: usaf516es047m usaf517es060m transistor af138 BA109 FZJ 131 2SA314 987T1 988T1 989T1
Contextual Info: SYMBOLS & CODES EXPLAINED IN T Y P E No. CROSS-INDEX & TE C H N IC A L SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. This manufacturer-identifying symbol (assigned by D .A .T.A .) is an integral part of the type number (in Type No. Cross Index,

SFT307

Abstract: usaf516es047m 2N2626 2N2624 2N2625 usaf516es048m FZJ 101 SFT308 usaf517es060m 2G302
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

2n1620

Abstract: 2n1958 oms 450 2N1617/I 2N1619 2SC114 SOT1156
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B L IN E No. t * # § 40°c H H TYPE N o. I I M IN . M A X P c ID E R A T E

2SC114 transistor

Abstract: FZJ 131 usaf516es047m PMT222 2SC286 2SC287 2SC430 400M transistor 2SC114 replacement transistor 2SC114
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

uPD70F3548

Abstract: uPD70F3554 uPD70F3558 uPD70F3550 uPD70F4002 v850e2 Fx4 uPD70F3551 uPD70F35 uPD70f4010 V850E2 FK4
Contextual Info: User Manual 32 Preliminary Document V850E2/Fx4 32-bit Microcontroller V850E2/FG4 V850E2/FJ4 V850E2/FK4 V850E2/FL4 µPD70F3548 µPD70F3549 µPD70F3550 µPD70F3551 µPD70F3552 µPD70F3553 µPD70F3554 µPD70F3555 µPD70F3556 µPD70F3557 µPD70F3558 µPD70F3559

1N5438

Abstract: tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175
Contextual Info: The Semiconductor DataBook This is the first supplement to the 4th Edition o f the Semiconductor Data Book originally published in July 1969. It is produced to keep an up-to-date listing o f the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers introduced after the publi­

AL102 ATES

Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible

2n7588

Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
Contextual Info: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.