CY7C199L Search Results

Contextual Info: fax id: 1030 CY7C199 32K x 8 Static RAM Features provided by an active LOW chip enable CE and active LOW output enable (OE) and three-state drivers. This device has an automatic power-down feature, reducing the power consum p­ tion by 81% when deselected. The C Y7C 199 is in the standard

San Ace 80

Abstract: CY7C199-25SC 7C199-10 7C199-15 7C199-20 7C199-25 7C199-35 7C199-45 7C199-8 C199
Contextual Info: fax id: 1030 1CY 7C19 9 CY7C199 32K x 8 Static RAM Features • High speed — 10 ns • Fast tDOE • CMOS for optimum speed/power • Low active power — 467 mW max, 12 ns “L” version • Low standby power — 0.275 mW (max, “L” version) • 2V data retention (“L” version only)

CY7C199

Abstract: CY7C199-12ZXC CY7C199-15ZXC cy7c199-20pxc
Contextual Info: CY7C199 32K x 8 Static RAM Features Functional Description • High speed The CY7C199 is a high-performance CMOS static RAM organized as 32,768 words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable CE and active LOW Output Enable (OE) and tri-state drivers. This device has

CY62256LL-PC

Abstract: VIC068A-GC VIC64-NC VIC64-UMB PALCE22V10-JI PALC16L8Q PLD VME A113 CY7B923 JESD22-A113
Contextual Info: Cypress Semiconductor Product Reliability 1997 Published June, 1997 CYPRESS SEMICONDUCTOR PRODUCT RELIABILITY TABLE OF CONTENTS 1.0 OVERVIEW OF CYPRESS SEMICONDUCTOR TOTAL QUALITY MANAGEMENT SYSTEM. 1 2.0 ELECTRICAL AVERAGE OUTGOING QUALITY. 2

CY7C199-35VI

Abstract: CY7C199 CY7C199-15ZC 7C199-10 7C199-12 7C199-15 7C199-20 7C199-25 7C199-35 7C199-8
Contextual Info: CY7C199 32K x 8 Static RAM Features • High speed — 10 ns • Fast tDOE • CMOS for optimum speed/power • Low active power — 467 mW max, 12 ns “L” version • Low standby power — 0.275 mW (max, “L” version) • 2V data retention (“L” version only)

CY7C199-15VC

Abstract: CY7C199-20vi CY7C199-25DMB
Contextual Info: 99 CY7C199 32K x 8 Static RAM Features • High speed — 10 ns • Fast tDOE • CMOS for optimum speed/power • Low active power — 467 mW max, 12 ns “L” version • Low standby power — 0.275 mW (max, “L” version) • 2V data retention (“L” version only)

Contextual Info: Ei SST CY7C199 W f CYPRESS 32K x 8 Static RAM Features Functional Description • High speed — 12 ns • Fast tuoE • CMOS for optimum speed/power • Low active power — 880 mW • Low standby power — 165 mW • Easy memory expansion with CE and OE features

7C199-20PC

Abstract: 7C199-15DMB
Contextual Info: CY7C199 CYPRESS 32K x 8 Static RAM Features Functional Description • High speed — 12 ns The CY7C199 is a high-performance CM OS static RAM organized as 32,768 w ords by 8 bits. Easy memory expansion is provided by an active LOW chip enable C E and active LOW output enable (O E )

Contextual Info: _ CY7C199 32K x 8 Static RAM Features Functional Description • High speed — 12 ns • Fast tooE • CMOS for optimum speed/power • Low active power The CY7C199 is a high-performance CMOS static RAM organized as 32,768 words by 8 bits. Easy memory expansion is

CY7C199-20vi

Contextual Info: fax id: 1030 CY7C199 32K x 8 Static RAM provided by an active LOW chip enable CE and active LOW output enable (OE) and three-state drivers. This device has an automatic power-down feature, reducing the power consump­ tion by 81% when deselected. The CY7C199 is in the standard

2218 8 PIN DIP

Abstract: 7C199-15 7C199-20 7C199-25 CY7C199 CY7C199-20ZC CY7C19920pc CY7C199L-20VC C1997 c1999
Contextual Info: CY7C199 CYPRESS 32K x 8 Static RAM Features Functional Description • The CY7C199 is a high-performance CMOS static RAM organized as 32,768 words by 8 bits. Easy memory expansion is provided by an active LOW chip enable CE and active LOW output enable (OE)

Contextual Info: fax id: 1030 CY7C199 32K x 8 Static RAM Features • Highspeed — 10 ns • Fast tpoE • CMOS for optimum speed/power • Low active power — 467 mW max, 12 ns “L” version • Low standby power — 0.275 mW (max, “L” version) • 2V data retention (“L” version only)

ZL89

Abstract: 7C199-10 7C199-12 7C199-15 7C199-8 A10C A12C A14C CY7C199 max0262
Contextual Info: fax id: 1030 1i" ; «sr : , » ^ .^ iX £ c x tW^ IUi f •w w 32K x 8 Static RAM provided by an active LOW chip enable CE and active LOW output enable (OE) and three-state drivers. This device has an automatic power-down feature, reducing the power consum p­

CY7C199

Abstract: 7C199-10 7C199-12 7C199-15 7C199-20 7C199-25 7C199-35 7C199-45 C199 c1998
Contextual Info: CY7C199 32K x 8 Static RAM Features D D D D D D Functional Description The CY7C199 is a highĆperformance CMOS static RAM organized as 32,768 words by 8 bits. Easy memory expansion is provided by an active LOW chip enable CE and active LOW output enable (OE)

Cp5609amt

Abstract: cp5858am CP5629BM CG5113 PCN030073 W48S111-14G 5L512 CY2292ASI CY2292SL-1V1 CY2292SC-68T
Contextual Info: SEMICONDUCTOR FINAL PRODUCT CHANGE NOTIFICATION PCN: PCN030073 DATE: November 7, 2003 Subject: Prune List Q4, 2003 To: Description of Change: Cypress is officially announcing the obsolescence of these products. Refer to the attached list for the list of products being discontinued.

7C199-10

Abstract: 7C199-12 7C199-15 7C199-20 7C199-25 7C199-35 7C199-45 7C199-8 C199 CY7C199
Contextual Info: fax id: 1030 CY7C199 32K x 8 Static RAM Features provided by an active LOW chip enable CE and active LOW output enable (OE) and three-state drivers. This device has an automatic power-down feature, reducing the power consumption by 81% when deselected. The CY7C199 is in the standard

KM62256BLG-7

Abstract: K6R4016V1C-FI12 IS62LV1024LL-70T1 K6R4016V1C-TI10 K6R1016C1C-TC12 KM62256BLG7 MT58L32L32PT-7.5 GVT72024A8J-10L K6R4016V1C-FI10 K6R4008V1C-JC12
Contextual Info: ISSI SRAM Cross Reference Important: please read disclaimer on last page Cypress P/N ISSI P/N C7C1334-10AC IS61NW6432-8TQ C7C1334-5AC IS61NW6432-5TQ IS61NW6432-6TQ, C7C1334-7AC IS61NW6432-7TQ C7C1335-5.5AC IS61C632A-5TQ C7C1335-7AC IS61C632A-7TQ C7C1335-8.5AC

CY7C199-25PC

Abstract: 2218 8 PIN DIP C19S 7C199-15 7C199-20 7C199-25 CY7C199 CE12U
Contextual Info: St •ss CY7C199 CYPRESS 32K x 8 Static RAM Features Functional Description • High speed — 12 ns • Fast tj>oE T he CY7C199 is a high-perform ance CM OS static RAM organized as 32,768 words by 8 bits. Easy m em ory expansion is provided by an active LO W chip enable

Contextual Info: CY7C199 32K x 8 Static RAM Features Functional Description • High speed — 12 ns • Fast tj>oE • CMOS for optimum speed/power • Low active power — 880 mW • Low standby power — 165 mW • Easy memory expansion with CE and OE features • TTL-compatible inputs and outputs

Contextual Info: fax id: 1030 CY7C199 3 2 K x 8 Static RAM provided by an active LOW chip enable CE and active LOW output enable (0 1 ) and three-state drivers. This device has an automatic power-down feature, reducing the power consump­ tion by 81 % when deselected. The CY7C199 is in the standard

CY7C199-10VC

Abstract: 7C199-10 7C199-15 7C199-20 7C199-25 7C199-45 CY7C199 CY7C199-15VC CY7C199-35DMB CY7C199-12ZC
Contextual Info: r CYPRESS CY7C199 32K x 8 Static RAM Features Functional Description • High speed — 1 2 ns • Fast t D O E • CMOS fo r optim um speed/power • Low active power — 880 mW The CY7C199 is a high-perform ance CM OS static RA M organized as 32,768 words by 8 bits. Easy memoxy expansion is