CY7C186 Search Results

CY7C185A-20LMB

Abstract: 7c186a CY7C186A-20DMB C105a CY7C185A CY7C186A-45DMB Y7C185 ZF78 CY7C185A-45LMB
Contextual Info: CYPRESS S E MI CONDUCTOR m 4GE D 250=1^2 DGOSGQÖ 7 H I C Y P 7-V£-23-/Z CY7C185A CY7C186A C Y PR FSS SEMICONDUCTOR F unctional D escrip tion Features Automatic power-down when deselected CMOS for optimum speed/power High speed - 20 ns Low active power -

Contextual Info: 86 CY7C186 8Kx8 Static RAM Features provided by an active LOW chip enable CE1 , an active HIGH chip enable (CE2), and active LOW output enable (OE) and three-state drivers. The device has an automatic power-down feature (CE1), reducing the power consumption by over 80%

7c186

Abstract: CY7C185-15VC die 7C185
Contextual Info: CY7C185 CY7C186 CYPRESS SEMICONDUCTOR Features 8,192 x 8 Static R/W RAM the memory. When CEj and WE inputs are both LOW and CE2 is H IG H , data on the The CY7C185 and CY7C186 are high-per- eight data input/output pins I/Oo through 1/ formanceCMOS static RAMs organized as O7 is written into the memory location ad8192 words by 8 bits. Easy memory expan­ dressedby the address present on the address

cmos SRAM 35ns 8k X 8 dip

Abstract: 7C166 CY7C161 CY7C162 CY7C164 CY7C166 CY7C185 CY7C186 CY7C187 7C164
Contextual Info: Qualification Report January 1992 QTP 91094 64K SRAM FAMILY MARKETIN G DEVICE PART NBR DESCRIPTION CY7C161 16K x 4 SIO CY7C162 16K x 4 (SIO) CY7C164 16K x 4 CY7C166 (OE) CY7C185 8K x 8 CY7C186 8K x 8 (.6 DIP) CY7C187 64K x 1 Version 1.2 PRODUCT DESCRIPTION (for qualification)

CY7CI85

Abstract: CY7C185A-55DMB
Contextual Info: CY7C185A CY7C186A CYPRESS SEMICONDUCTOR 8 ,1 9 2 x 8 Static RAV RAM enable W £ inputs are both LOW, and the chip enable two (CE2) input is HIGH. Data The CY7C185A and CY7C186A are high- on the eight I/O pins (I/Oo through I/O7) is performance CMOS static RAMs orga­ written into the memory location specified

Contextual Info: CY7C185 CY7C186 SEMICONDUCTOR F unctional D escription Features A utom atic pow er-dow n w hen deselected C M O S for op tim u m speed/pow er H igh speed — 10 n s Low active power — 935 mW Low S tand b y Pow er — 220 mW T T L -com p atib le in p u ts an d ou tp u ts

CY7C186-45PC

Abstract: CY7C186-55PC 7C186-20PC
Contextual Info: CY7C185 CY7C186 CYPRESS SEMICONDUCTOR Features Automatic power-down when deselected CMOS for optimum speed/power High speed - 20 ns Low active power - 550 mW Low Standby Power - 110 mW TTL-compatible inputs and outputs Capable of withstanding greater than

CY7C185A

Abstract: 7C186A-35 7C186A-55 7C185A-55 7c186a 7C116 7C186A-25
Contextual Info: CYPRESS SEMICONDUCTOR MbE D B ESflSbb? OdDbbGM b E3CYP CY7C185A CY7C186A 'T M ^ V h -X V CYPRESS SEMICONDUCTOR Features Automatic power-down when deselected CMOS for optimum speed/power High speed — 20 ns Low active power — 990 mW Low standby Power — 220 mW

CY7C186

Abstract: CY7C186-20PC CY7C186-20ZC CY7C186-25PC 7C186-20 C1863
Contextual Info: 86 CY7C186 8Kx8 Static RAM Features provided by an active LOW chip enable CE1 , an active HIGH chip enable (CE2), and active LOW output enable (OE) and three-state drivers. The device has an automatic power-down feature (CE1), reducing the power consumption by over 80%

L9101

Abstract: CY7C185-55PC CY7C185-55DC 7C185-25 CY7C185 CY7C186 CY7C185-15VC CY7C185-15VC die CY7C185-35PC
Contextual Info: CY7C185 CY7C186 CYPRESS SEMICONDUCTOR Features Functional Description • Automatic power-down when deselected • CMOS for optimum speed/power • High speed The CY7C185 and CY 7C186 are high-perform anceC M O S static R A M sorganized as 8192 w ords by 8 bits. Easy m em ory expan­

Contextual Info: CY7C185 CY7C186 CYPRESS SEMICONDUCTOR 8 ,1 9 2 x 8 Static R/W RAM Functional Description Features A u tom atic pow er-dow n w hen d eselected C M O S for op tim u m sp eed /p ow er H igh speed — 20 ns Low active power — 550 mW Low S tan d b y Pow er — 110 mW

7C185

Abstract: sumitomo epoxy 64K SRAM Cypress 7C166 7C164
Contextual Info: Qualification Report Nov 1993, QTP 92281 64K SRAM 256K "CHOP" Fab 3 (Bloomington, Mn) QUALIFICATION MARKETING PART NUMBER CY7C161/A* CY7C162/A* CY7C164/A* CY7C166/A* CY7C185/A* CY7C186/A* CY7C187/A* DEVICE DESCRIPTION 16K x 4 Static R/W RAM, Separate I/O

Contextual Info: CY7C185A CY7C186A ¡zL sE r r i r CYPRESS 'W SEMICONDUCTOR = 8,192 x 8 Static R /W RA M Features Functional Description • A utom atic pow er-dow n w hen deselected • C M O S fo r o p tim u m speed/pow er The CY7C185A and CY7C186A are highperformance CMOS static RAMs orga­

LS 2027

Abstract: 7C165
Contextual Info: CY7C185A CY7C186A CYPRESS SEMICONDUCTOR Features 8 ,1 9 2 x 8 Static R/W RAM F unctional D escrip tion A u tom atic power-down w hen d eselected C M O S for op tim u m sp eed /p ow er H igh speed — 20 ns Low active power — 688 m W Low stand b y Pow er

circuit card assy input filter for miller 200 Dx

Abstract: 64 point radix 2 FFT LM318 list DSP101 74AS20 TTL radix-4 DIT FFT C code TLC32040C TMS320 TMS320C31 TMS320C32
Contextual Info: TMS320C3x GeneralĆPurpose Applications User’s Guide 1998 Digital Signal Processing Solutions Printed in U.S.A., January 1998 SDS SPRU194 TMS320C3x General-Purpose Applications User’s Guide Literature Number: SPRU194 January 1998 Printed on Recycled Paper

Contextual Info: CY7C18S CYPRESS 8K x 8 Static RAM Features Functional D escription • High speed — 15 ns The CY7C185 is a high-performance CMOS static RAM organized as 8192 words by 8 bits. Easy memory expansion is provided by an active LOW chip enable CEi , an active HIGH chip enable (CE2),

C1856

Abstract: C185 CY7C185 CY7C185-15VC C1859 C1858 c1853 C1857
Contextual Info: fax id: xxxx CY7C185 8K x 8 Static RAM Features • High speed — 15 ns • Fast tDOE • Low active power — 715 mW • Low standby power — 220 mW • CMOS for optimum speed/power • Easy memory expansion with CE1, CE2 and OE features • TTL-compatible inputs and outputs

256K x 8 SRAM CY7C128A SRAM

Abstract: 5962-86705 PLD28 5962-89935 pld20ra10 5962-89598 CY7C132 cy7c291 PLD20RA PLDC20G10
Contextual Info: Military Product Selector Guide Static RAMs Size Organization Pins DIP SMD Number Part Number Speed (ns) ICC/ISB/ICCDR (mA @ ns) 883 Availability 1K 256 x 4 22 CY7C122 5962-88594 tAA = 25, 35 90 @ 25 Now 4K 1K x 4—Separate I/O 24S CY7C150 5962-88588 tAA = 25

smd transistor w16

Abstract: transistor smd w16 PALC22V10B-15DMB 256K x 8 SRAM CY7C128A SRAM PALC22V10B-20DMB Mil JAN jm38510 Cross Reference smd cross reference smd w20 CY7C245-45WMB 455b
Contextual Info: SMD Cross Reference Listed below are the SMDs for which Cypress is an approved source of supply. Please contact your local Cypress representative or see the Cypress website www.cypress.com for the latest SMD update. All part numbers that have an X in the PPL (Preferred

toshiba tc 97101

Abstract: tc 97101 M7401 M73049 "256K x 16" SRAM PLCC M73002 M7206 M7-300 M72016 T 9722
Contextual Info: CYPRESS SEMICONDUCTOR CORPORATION PRODUCT RELIABILITY REPORT QUARTER 3, 1997 PERFORM PER THE REQUIREMENT OF 25-00008, RELIABILITY MONITOR PROGRAM SPECIFICATION Marc Hartranft QA Engineering Department Manager CYPRESS SEMICONDUCTOR CORPORATION PRODUCT RELIABILITY REPORT

ed18810

Abstract: 5962-3829453MTa QML-38535 5962-3829410MYX 5962-R085-93 IDT7164L70L32B 5962-3829412MXA GDIP1-T28 5C640 UT6717685
Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED E Added chanaes in accordance with NOR 5962-R085-93 93-03-16 M. A. Frve F Added device types 45, 46, and 47. Removed CAGE code 34168 for case outline 8, and added cage code 34168 for case outline 9. Editorial changes throughout.

Contextual Info: fax id : 1013 FÖH REVIEW ONLY CY7C185 8K x 8 Static RAM provided by an active LOW chip enable CE-j , an active HIGH chip enable (CE2), and active LOW output enable (UE) and three-state drivers. This device has an automatic power-down feature (CE-) orC E2), reducing the power consumption by 70%

uPD23C4000

Abstract: 93c46 atmel sony Cross Reference atmel 93c66 HN62404P 93C46L rom at29c010 Hitachi SRAM cross reference x2864a UPD23C2000
Contextual Info: MEMORY ICs CROSS REFERENCE GUIDE 3. C R O S S REFEREN CE GUIDE 3.1 Video RAM Density 256K 512K Feature Minimum Organization 64Kx4 Samsung KM424C64 Minimum 64Kx8 KM428C64 Minimum 256KX4 KM424C256 Micron Hitachi Ti HM53461 2 TMS4461 HM534251 TM S44C250 TC524256A

C1857

Abstract: 7C185-12 7C185-15 7C185-20 7C185-25 7C185-35 C185 CY7C185 CY7C185-12PC CY7C185-12VC
Contextual Info: CY7C185 8KĂxĂ8 Static RAM Features D D D D D D Functional Description The CY7C185 is a highĆperformance CMOS static RAM organized as 8192 words by 8 bits. Easy memory expansion is provided by an active LOW chip enable CE , an active HIGH chip enable (CE2),