CY7C185A Search Results

CY7C185A-20LMB

Abstract: 7c186a CY7C186A-20DMB C105a CY7C185A CY7C186A-45DMB Y7C185 ZF78 CY7C185A-45LMB
Contextual Info: CYPRESS S E MI CONDUCTOR m 4GE D 250=1^2 DGOSGQÖ 7 H I C Y P 7-V£-23-/Z CY7C185A CY7C186A C Y PR FSS SEMICONDUCTOR F unctional D escrip tion Features Automatic power-down when deselected CMOS for optimum speed/power High speed - 20 ns Low active power -

automaticpower change over switch circuit diagram

Abstract: CY7C185 CY7C185A
Contextual Info: CY7C185A '* C YPRESS 8K x 8 Static RAM Features Functional D escription • High speed — 20 ns • CMOS for optimum speed/power T he CY7C185A is a high-perform ance CMOS static RA M organized as 8192 words by 8 bits. Easy mem ory expansion is provided by an active LO W chip enable

CY7C185A-20LMB

Abstract: C185A CY7C185 CY7C185A 624a2
Contextual Info: 1CY 7C18 5A CY7C185A 8K x 8 Static RAM Features • High speed — 20 ns • CMOS for optimum speed/power • Low active power — 743 mW • Low standby Power — 220 mW • TTL-compatible inputs and outputs • Easy memory expansion with CE1, CE2 and OE features

Contextual Info: CY7C185A p yXpX : v « *1 8K x 8 Static RAM three-state drivers. The device has an automatic power-down feature CE-| , reducing the power consumption by over 70% when deselected. The CY7C185A is in the standard 300-mil-wide DIP package and leadless chip carrier.

CY7CI85

Abstract: CY7C185A-55DMB
Contextual Info: CY7C185A CY7C186A CYPRESS SEMICONDUCTOR 8 ,1 9 2 x 8 Static RAV RAM enable W £ inputs are both LOW, and the chip enable two (CE2) input is HIGH. Data The CY7C185A and CY7C186A are high- on the eight I/O pins (I/Oo through I/O7) is performance CMOS static RAMs orga­ written into the memory location specified

CY7C185A

Abstract: 7C186A-35 7C186A-55 7C185A-55 7c186a 7C116 7C186A-25
Contextual Info: CYPRESS SEMICONDUCTOR MbE D B ESflSbb? OdDbbGM b E3CYP CY7C185A CY7C186A 'T M ^ V h -X V CYPRESS SEMICONDUCTOR Features Automatic power-down when deselected CMOS for optimum speed/power High speed — 20 ns Low active power — 990 mW Low standby Power — 220 mW

C185A

Abstract: CY7C185 CY7C185A
Contextual Info: CY7C185A 8K x 8 Static RAM Features • High speed — 20 ns • CMOS for optimum speed/power • Low active power — 743 mW • Low standby Power — 220 mW • TTL-compatible inputs and outputs • Easy memory expansion with CE1, CE2 and OE features • Automatic power-down when deselected

22V10-Macrocell

Abstract: 99522 PLD20RA10 22V10D 5962-89598 cy7c291 CY7C425 PALC22V10B CY6116A CY7C128A
Contextual Info: Military Product Selector Guide Static RAMs Size Organization Pins DIP SMD Number Part Number 16K 2K x 8—CS Power-Down 24S CY7C128A 16K 2K x 8—CS Power-Down 24 CY6116A 64K 8K x 8—CS Power-Down 28S CY7C185A 256K 32K x 8—CS Power-Down 28 CY7C198 256K

Contextual Info: CY7C185A CYPRESS SEMICONDUCTOR • High speed — 20 ns • CMOS for optimum speed/power • Low active power — 743 mW • Low standby Power — 220 mW • TTL-compatible inputs and outputs • Easy memory expansion with CEi, CE2 and OE features • Automatic power-down when

Contextual Info: CY7C185A CYPRESS SEMICONDUCTOR • High speed — 20 ns • CMOS for optimum speed/power • Low active power — 743 mW • Low standby Power — 220 mW • TTL-compatible inputs and outputs • Easy memory expansion with C Ei, CE 2 and OE features • Automatic power-down when

Contextual Info: CY7C185A CYPRESS 8K x 8 Static RAM Features Functional Description • High speed T he CY7C185A is a high-perform ance CM OS static R A M organized as 8192 words by 8 bits. Easy m em ory expansion is provided by an active LO W chip enable C E i , an active H IG H chip en able (C E 2),

CY7C185

Abstract: CY7C185A 5A15D
Contextual Info: CY7C185A ’/ CYPR ESS 8K x 8 Static RAM Features Functional Description • High speed — 20 ns • CMOS for optimum speed/power • Low active power — 743 mW • Low standby Power — 220 mW • TTL-compatible inputs and outputs • Easy memory expansion with CE],

C185A

Abstract: CY7C185 CY7C185A CY7C185A-15DMB
Contextual Info: CY7C185A 8KĂxĂ8 Static RAM Features CMOS for optimum speed/power Low active power 743 mW Low standby Power 220 mW TTL Ćcompatible inputs and outputs Easy memory expansion with CE1, CE2 and OE features Automatic powerĆdown when deselected Logic Block Diagram

Contextual Info: CY7C185A CY7C186A ¡zL sE r r i r CYPRESS 'W SEMICONDUCTOR = 8,192 x 8 Static R /W RA M Features Functional Description • A utom atic pow er-dow n w hen deselected • C M O S fo r o p tim u m speed/pow er The CY7C185A and CY7C186A are highperformance CMOS static RAMs orga­

C185A

Abstract: CY7C185 CY7C185A
Contextual Info: ww.hoknY7C185A CY7C185A 8K x 8 Static RAM Features • High speed — 20 ns • CMOS for optimum speed/power • Low active power — 743 mW • Low standby Power — 220 mW • TTL-compatible inputs and outputs • Easy memory expansion with CE1, CE2 and OE features

7C185A-25

Abstract: CY7C185 CY7C185A 7C185A-45
Contextual Info: CY7C185A CYPRESS 8K x 8 Static RAM Features three-state drivers. The device has an automatic power-down feature CE-| , reducing the power consumption by over 70% when deselected. The CY7C185A is in the standard 300-m il-wide DIP package and leadless chip carrier.

22V10-Macrocell

Abstract: Product Selector Guide PLD20RA10 5962-93112 28s40 CY7C408
Contextual Info: Military Product Selector Guide Static RAMs Size Organization Pins DIP Part Number SMD Number 16K 2K x 8—CS Power-Down 24S CY7C128A 16K 2K x 8—CS Power-Down 24 CY6116A 64K 8K x 8—CS Power-Down 28S CY7C185A 5962-38294 64K 8K x 8—CS Power-Down 28S

LS 2027

Abstract: 7C165
Contextual Info: CY7C185A CY7C186A CYPRESS SEMICONDUCTOR Features 8 ,1 9 2 x 8 Static R/W RAM F unctional D escrip tion A u tom atic power-down w hen d eselected C M O S for op tim u m sp eed /p ow er H igh speed — 20 ns Low active power — 688 m W Low stand b y Pow er

Contextual Info: CY7C185A / CYPRESS 8K x 8 Static RAM Features Functional D escription • High speed — 20 ns The CY7C185A is a high-perform ance CM OS static RAM organized as 8192 words by 8 bits. Easy m emory expansion is provided by an active LOW chip enable C E [ , an active H IG H chip enable (C E ;),

Contextual Info: CY7C185A CY7C186A f ' 1V P ' P ] 7 Q C SEMICONDUCTOR 8 ,1 9 2 x 8 Static R /W RAM enable two CE2 input is HIGH. Data on the eight I/O pins (I/Oo through I/O7) is written The CY7C185A and CY7C186A are high- into the memory location specified on the performance CMOS static RAMs orga­ address pins (Ao through A 12).

C1856

Abstract: C185 CY7C185 CY7C185-15VC C1859 C1858 c1853 C1857
Contextual Info: fax id: xxxx CY7C185 8K x 8 Static RAM Features • High speed — 15 ns • Fast tDOE • Low active power — 715 mW • Low standby power — 220 mW • CMOS for optimum speed/power • Easy memory expansion with CE1, CE2 and OE features • TTL-compatible inputs and outputs

256K x 8 SRAM CY7C128A SRAM

Abstract: 5962-86705 PLD28 5962-89935 pld20ra10 5962-89598 CY7C132 cy7c291 PLD20RA PLDC20G10
Contextual Info: Military Product Selector Guide Static RAMs Size Organization Pins DIP SMD Number Part Number Speed (ns) ICC/ISB/ICCDR (mA @ ns) 883 Availability 1K 256 x 4 22 CY7C122 5962-88594 tAA = 25, 35 90 @ 25 Now 4K 1K x 4—Separate I/O 24S CY7C150 5962-88588 tAA = 25

smd transistor w16

Abstract: transistor smd w16 PALC22V10B-15DMB 256K x 8 SRAM CY7C128A SRAM PALC22V10B-20DMB Mil JAN jm38510 Cross Reference smd cross reference smd w20 CY7C245-45WMB 455b
Contextual Info: SMD Cross Reference Listed below are the SMDs for which Cypress is an approved source of supply. Please contact your local Cypress representative or see the Cypress website www.cypress.com for the latest SMD update. All part numbers that have an X in the PPL (Preferred

7c186

Abstract: CY7C185-15VC die 7C185
Contextual Info: CY7C185 CY7C186 CYPRESS SEMICONDUCTOR Features 8,192 x 8 Static R/W RAM the memory. When CEj and WE inputs are both LOW and CE2 is H IG H , data on the The CY7C185 and CY7C186 are high-per- eight data input/output pins I/Oo through 1/ formanceCMOS static RAMs organized as O7 is written into the memory location ad8192 words by 8 bits. Easy memory expan­ dressedby the address present on the address