CY7B192 Search Results

Contextual Info: CY7B191 CY7B192 PRELIMINARY F CYPRESS SEMICONDUCTOR 64Kx 4 Static R/W RAM with Separate I/O Features Functional Description • High speed T he CY7B191 and CY7B192 are highperformance BiCMOS static RAM s orga­ nized as 64K words by 4 bits with separate I/O. Easy m em oiy expansion is provided

Contextual Info: CY7B191 CY7B192 CYPRESS SEMICONDUCTOR Features Functional Description • High speed — 10 ns t^A T he CY7B191 an d CY7B192 are high-perform ance BiC M O S static R A M s organized as 64K w ords by 4 bits w ith separate I/O . Easy m em ory expansion is provided by an

B1912

Contextual Info: CY7B191 CY7B192 CYPRESS SEMICONDUCTOR Features Functional Description • High speed T he CY7B191 an d CY 7B192 are high-per­ form ance B iC M O S static R A M s organized as 64K w ords by 4 bits w ith sep a ra te I/O. Easy m em ory expansion is provided by an

CY7C169

Abstract: 54600
Contextual Info: Thermal Management CYPRESS Part Number CY7B173 CY7B174 CY7B180 CY7B181 CY7B185 CY7B186 CY7B191 CY7B192 CY7B194 CY7C122 CY7C123 CY7C128 CY7C128A CY7C130 CY7C131 CY7C132 CY7C136 CY7C140 CY7C141 CY7C142 CY7C146 CY7C147 CY7C148 CY7C149 CY7C150 CY7C157 CY7C161A

ZF78

Abstract: 10DC IR 3 PINS
Contextual Info: CY7B191 CY7B192 PR ELIM IN AR Y CYPRESS SEMICONDUCTOR 64K x 4 Static R/W RAM with Separate I/O Features Functional Description • High speed — 1 0 ns U a The CY7B191 and CY7B192 are highperformance BiCMOS static RAMs orga­ nized as 64K. words by 4 bits with separate

CY7B191

Abstract: CY7B192
Contextual Info: CY7B191 CY7B192 CYPRESS SEMICONDUCTOR 64K x 4 Static R/W RAM with Separate I/O Features Functional Description • High speed T he CY7B191 and CY 7B192 a re high-perform ance BiCM O S static R A M s organized as 64K w ords by 4 bits w ith separate I/O . Easy m em ory expansion is p rovided by an

Contextual Info: CY7B191 CY7B192 AD VAN CED INFORM ATION CYPRESS SEMICONDUCTOR 65,536 x 4 Static R /W RAM with Separate I/O Features Functional Description • High speed T h e CY7B191 and CY7B192 are high-per­ form ance BiCM O S static R A M s organized as 65,536 words by 4 bits with separate I/O .

Contextual Info: CY7B191 CY7B192 ADVANCED INFORMATION CYPRESS SEMICONDUCTOR 65,536 x 4 Static R/W RAM with Separate I/O Features Functional Description • High speed - 12 ns U a T h e C Y 7B 191 a n d C Y 7 B 1 9 2 a re h ig h -p c rfo rm a n e e B iC M O S s ta tic R A M s o rg a n iz e d

CY7B192-12

Abstract: CY7B192-15 IDT71282L-25 IDT71282L-35
Contextual Info: 117 — — 2 5 6 K m « £ iä m m CO X TAAC TCAC TOE •ax max ■ax ns (ns) (ns) CMOS S t a t i c RAM ( 6 5 5 3 6 X 4 ) A v + V '/ ft « TOH TOD ■in max (ns) (ns) TWP TDS ■in ■in (ns) (ns) TDH TWD T ’ VR min min (ns) (ns) ■ax (ns) V D D or V C C

CY27S03A

Abstract: 15JC10 CY7C190 cy7c9101 cy7c122 die VIC068A user guide
Contextual Info: Thermal Management and Component Reliability slope of the logarithmic plots is given by the activation energy of the failure mechanisms causing thermally activated wear out of the device see Figure 1 . One of the key variables determining the long-term reliability

CY7C9101

Abstract: CY7C510 CY7C190 cy7c189 G30-88 CY7c910 EA 9394 cy3341 CY6116 cy7c901
Contextual Info: fax id: 8511 Thermal Management Thermal Management and Component Reliability One of the key variables determining the long-term reliability of an integrated circuit is the junction temperature of the device during operation. Long-term reliability of the semiconductor chip degrades proportionally with increasing temperatures following an exponential function described by the