CURRENT01 Search Results

IRFF122

Abstract: IRFF123
Contextual Info: IRFF122,123 F [ f F 5.0 AMPERES 100, 60 VOLTS Rd S ON = 0.4 n HELD EFFECT POWER TRANSISTOR Preliminary This series of N -C hannel Enhancem ent-m ode Power MOSFETs utilizes G E’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­

Contextual Info: QS723620 Ô High-Speed CMOS 1 K X 3 6 Clocked FIFO with Bus Sizing QS723620 FEATURES • Fast cycle times: 20/25/30 ns • Selectable 36/18/9-bit word width for both input port and output port • Byte-order-reversal function i.e., “big-endian” o “little-endian” conversion

D84DL2

Abstract: IRF530 N-Channel fet
Contextual Info: IRF530,531 D84DL2,K2 Ftrnr HELD EFFECT POWER TRANSISTOR 114.0 AMPERES 100, 60 VOLTS R[ S ON) = 0.18 n This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability.

IGT6D21

Abstract: IGT6E21
Contextual Info: IGT6D21.E21 Insulated Gate Bipolar Transistor This IG T " Transistor Insulated Gate Bipolar Transistor is a new type of MOS-gate turn on/off power switching device combining the best advantages of power MOSFETS and bipolar transistors. The result is a device that has the high

IRF722

Abstract: IRF723
Contextual Info: [P3MÌfiì°[ ffiQ)§> FUT IRF722,723 2.5 AMPERES 400, 350 VOLTS Rd S ON) = 2.5 n FIELD EFFECT POWER TRANSISTOR This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­

transistor tl 187

Abstract: IRF542 IRF543 2415a
Contextual Info: [FÂiiMÆSSF IRF542,543 24 AMPERES 100, 60 VOLTS INDS ON = 0.11 n FIELD EFFECT POWER TRANSISTOR This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­

IRFF210

Abstract: IRFF211
Contextual Info: IMEF RELD EFFECT POWER TRANSISTOR IRFF210,211 2.2 AM PERES 200,150 VOLTS RD S O N = 1.5 n Preliminary This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­

74F253

Abstract: PI5C3253 PI74FCT253T SL01
Contextual Info: l l l l l i l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l M I I I I I I I I I I I I I I I I I Bus Switch Dual 4:1 MUX/DEMUX Product Features:

Contextual Info: P ER ICOM PI5V330 i i mi i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i Mi i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i

5050H

Contextual Info: F t a u c r StaFiCO TiO NS m Integrated Circuits &oup ID245P01 32M B FJaán M em or/ C a id H od e l N o D 245P01 Spec No. : U 807001 Issue Dat e: J i ^ 8 , 1 9 9 8 SHARP I D 2 4 5 P 0 1 O Handle this document carefully for it contains material protected by international copyright law. Any repro­

2.2Uf electrolytic capa DEC

Contextual Info: Datasheet 6-Channel White LED Driver with Integrated FET for up to 60 LEDs BD6590MUV ●General Description BD6590MUV is white LED driver IC with PWM step-up DC/DC converter that can boost max 40V and current driver that can drive max 30mA. The wide and precision brightness can be controlled by external

irf8408

Abstract: transistor irf840 fet irf840 inverter irf840 VNE40 IRFB40 D84ER2 high voltage pulse with irf840 3232a Application of irf840
Contextual Info: IRF840.841 D84ER2.R1 [MIT 8 AMPERES 500, 450 VOLTS r DS ON = °-85 n FIELD EFFECT POWER TRANSISTOR This series of N -C hannel Enhancem ent-m ode Power MOSFETs utilizes G E’s advanced Power DM OS technology to achieve low on-resistance with excellent device rugged­

IRF532

Abstract: IRF53 IRF533 DM-48
Contextual Info: [F^MiiMKQ [HIT IRF532,533 12.0 AMPERES 1100, 60 VOLTS RDS ON = 0.25 n HELD EFFECT POWER TRANSISTOR This series of N -C hannel Enhancem ent-m ode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­

SEC irf630

Abstract: D84 TRANSISTOR irf630 D84DN2 Irf631 Switching N-Channel Power MOS FET 50a transistor irf630 IRF630 Transistor
Contextual Info: IRF630,631 D84DN2.M2 lP MIfiiD !i£§ FIT FIELD EFFECT POWER TRANSISTOR 9.0 AMPERES S!00,150 VOLTS RDS(ON = 0-4 A This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­

tg0-e

Abstract: PI74LPT241 LPT24
Contextual Info: fuPER I COM PI74LPT241 11111 II 11i 111111111111111 II 111111111111111111111111111 il I i M i i i m i i i i i i i m i i i i i i i m i m i i i i i i i i i i m i i i i i i i i i i Fast CMOS 3.3V 8-Bit Buffer/Line Driver Product Features: • Compatible with LCX and LVT™ families of products

Contextual Info: ISSI IS89C51 CMOS SINGLE CHIP 8-BIT MICROCONTROLLER with 4-Kbytes of FLASH NOVEMBER 1998 FEATURES GENERAL DESCRIPTION • 8 0C 51 b ased arch itecture • 4 - K bytes of on-chip R e p ro g ra m m a b le Flash The lS S I IS89C51 is a high-performance microcontroller

Contextual Info: fÙ PERICOM PI5C3257 11111111111111111111111111111111111 il 111111111111111111111111111111111111111111111 il 111111111111111111111111111111 Quad 2:1 MUX/DEMUX BusSwitch Product Features: Product Description: • Near zero propagation delay Pericom Semiconductor’s PI5C series of logic circuits are pro­

1250KHZ

Abstract: MCR03PZPZD7502
Contextual Info: Datasheet 6-Channel White LED Driver with Integrated FET for up to 60 LEDs BD6590MUV ●General Description BD6590MUV is white LED driver IC with PWM step-up DC/DC converter that can boost max 40V and current driver that can drive max 30mA. The wide and precision brightness can be controlled by external

IRFF312

Abstract: IRFF313
Contextual Info: FUT HELD EFFECT POWER TRANSISTOR IRFF312,313 1.15 AMPERES 400, 350 VOLTS Rd S ON = 5.0 Í1 Preliminar/ This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­

IRFI50

Abstract: IRF150 DM160 D86FL2 irf151
Contextual Info: IRF150,151 D86FL2.K2 [F@MÌRì”[ ìfiS S > FIT HELD EFFECT POWER TRANSISTOR This series of N -C hannel Enhancem ent-m ode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­ ness and reliability.

F832

Abstract: IRF833 IRF832
Contextual Info: IRF832,833 [F^ÿM ^KÆ © [FUT 4.0 AMPERES 500, 450 VOLTS RDS ON = 2.0 n RELD EFFECT POWER TRANSISTOR This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­

Contextual Info: IDT7132SA/LA IDT7142SA/LA CMOS DUAL-PORT RAM 1 6 K 2 K x 8 -B IT Integrated D evice T echnology, Inc. FEATURES: DESCRIPTION: • High-speed access — Military: 25/35/55/100ns (max.) — Com mercial: 25/35/55/100ns (max,) — Com mercial: 20ns only in PLCC for 7132

ifm D 45128

Abstract: kd 2060 transistor
Contextual Info: .co m Original Device Manual ClassicController w.if m CR0032 Runtime system v02 ele ifm 7390660_07_UK 2014-08-15 ctro nic gm bh ww CODESYS v2.3 > English ifm Device Manual ecomatmobile ClassicController CR0032 Runtime System V02 2014-08-15 .co m Contents

TO-5 header

Abstract: CLD156 CLD156R
Contextual Info: CLD156. CLD156R S f Clairex Large Active Area Silicon Planar photodiodes features • • • • Technologies, me. May, 2001 absolute maximum ratings (TA = 25°C unless otherwise stated 100° acceptance angle 860nm peak response TO-5 hermetic package usable for visible through near-IR