CTO70 Search Results

Contextual Info: SN55ALS192, SN75ALS192 QUADRUPLE DIFFERENTIAL LINE DRIVERS SLLS007C - JULY 1985 - REVISED MAY 1995 Meets or Exceeds the Requirements of ANSI Standard EIA/TIA-422-B and ITU Recommendation V.11 SN55ALS192. . . J OR W PACKAGE SN75ALS19 2 . D OR N PACKAGE TOP VIEW

Contextual Info: TMS28F040 4 194 304-BIT FLASH ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORY SMJS040-DECEMBER 1992 N PACKAGET Organization . . . 512K x 8 Separately Erasable 32K Byte Blocks Two Power Supplies 5 V and 12 V 100% TTL-Level Control Inputs Fully Automated On-Chip Erase and Byte

MC3453

Contextual Info: MC3453, MC3553 QUAD LINE DRIVERS WITH COMMON ENABLE SLLS119 A -D 3 00 0, FE B R U A R Y 1986 - REVISED F E B R U A R Y 1993 Similar to a Dual Version of SN55/75110A Line Driver D, J, OR N . . . PACKAGE TOP VIEW Improved Stability Over Supply Voltage and

MIL-STD-463

Abstract: LM136-2.5
Contextual Info: LT1009, LT1009Y 2.5-V INTEGRATED REFERENCE CIRCUITS SLVS013E - MAY 1987 - REVISED AUGUST 1995 • • • • • • Excellent Temperature Stability Initial Tolerance. . . 0.2% Max

Contextual Info: TMS29F040 524288 BY 8-BIT FLASH MEMORY SMJS820B - APRIL 1996- REVISED NOVEMBER 1987 • • • • • • • • • • Single Power Supply 5 V± 10% - 3.3 V ± 0.3 V - See ’29LF040/’29VF040 Data Sheet Literature Number SMJS825 - 2.7 V to 3.6 V - See ’29LF040/’29VF040

Contextual Info: O K I Semiconductor M SC23432A-XXBS8/PS8 4,194,304-Word x 32-Bit DRAM MODULE : FAST PAGE MODE TYPE DESCRIPTION The OKI MSC23432A-xxBS8/DS8 is a fully decoded 4,194,304-word x 32-bit CMOS Dynamic Random Access Memory Module composed of eight 16-Mb DRAMs 4M x 4 in SOJ packages

DS2176

Abstract: DS2176IND DS2176Q DS2180A
Contextual Info: DA L L A S S E M I C O N D U C T O R C O R P CHE D | Et.14130 GODSflflS 4 | Dallas Sem iconductor T-~i£-n-3i T 1 R e c e i ve B u ffe r FEATURES Synchronizes loop-timed and systemtimed T1 data streams Two-frame buffer depth; slips occur on frame boundaries

PMI-OP07

Abstract: pmi op07 OP07D OPERATIONAL AMPLIFIERS PMI APPLICATIONS OP07CP pmi op07CP OP07 pmi OP07CP PMI OP07 OP07C
Contextual Info: OP07C, OP07D, OP07Y LOW-OFFSET VOLTAGE OPERATIONAL AMPLIFIERS _ S LO S Q 9 9A -O C T O B E R 1983 - REVISED SEPTEM BER 1991 Low Noise No External Components Required Replaces Chopper Amplifiers at a Lower Cost D OR P PACKAGE TOP VIEW

tcnl 100

Abstract: EP1210 CPT210 cpt21
Contextual Info: EP1210 r î n A CD D V CPT210 A FEATURES GENERAL DESCRIPTION High Density over 1200 gates) replacem ent for T T L and 74HC. Advanced C H M O S E P R O M technology allow s for erasability and reprogram mability. Low power: 15 mW typical standby power dissipation.

UPT 12 R

Abstract: S193
Contextual Info: SN74ALS193 SN54ALS193 SYNCHRONOUS 4-BIT UP/DOWN COUNTERS DUAL CLOCK WITH CLEAR D 2 6 6 1 , D E C E M B E R 1982 - R E V IS E D M A Y 19 86 Look-Ahead Circuitry Enhances Cascaded Counters Fully Synchronous in Count Modes SN 54A S193. . . J PACKAGE SN74ALS193 . . . 0 OR N PACKAGE

Contextual Info: in te l 3207A QUAD BIPOLAR-TO-MOS LEVEL SHIFTER AND DRIVER • High Speed, 45 nsec Max. — Delay + Transition Time Over Temperature with 200 pF Load ■ TTL and DTL Compatible Inputs ■ 1103 and 1103A Memory Compatible at Output ■ Simplifies Design — Replaces

Contextual Info: HYUNDAI SEMICONDUCTOR HYM581600 Series 16M X 8-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM581600 is a 16M x 8-bit Fast page mode CMOS DRAM module consisting of eight HY5116100 in 24/28 pin SOJ or TSOP-II on a 30 pin glass-epoxy printed circuit board. 0.22p.F decoupling capacitor is mounted for

Contextual Info: intei 21019 1,048,576 x 9-BIT DYNAMIC RAM MEMORY MODULE WITH PAGE MODE 21019-06 21019-07 21019-08 21019-10 Units Acces Time from RAS tRAc 60 70 80 100 ns Access Time from CAS (tcAc) 20 20 20 25 ns Read Cycle Time (tpc) 125 140 160 190 ns 1,048,576 x 9-Bit Organization

HY514460

Contextual Info: •HYUNDAI HY514460 Series SEMICONDUCTOR 256 Kx164 R C MO S DRAM with 2 C A S & W P B PRELIMINARY DESCRIPTION The HY514460 is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advanced submicron CMOS process technology and advanced circuit design technique to achieve fast access

FAIU

Contextual Info: in te T 89024 2400 BPS INTELLIGENT MODEM CHIP SET • Easily Customized Command Set and Features ■ For Public Switched Telephone Network and Unconditioned Leased Lines Applications ■ Two Chip Intelligent Modem Solution with Minimal External Components

Contextual Info: •HYUNDAI H Y SEMICONDUCTOR 514100A S e rie s 4M x 1-bit CMOS DRAM DESCRIPTION The HY514100A is the new generation and fast dynamic RAM organized 4,194,304 x 1-bit. The HV514100A utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating

Contextual Info: 3.3 VOLT CMOS CLOCKED FIFO WITH BUS-MATCHING AND BYTE SWAPPING 64 x 36 • Passive parity checking on each Port • Parity Generation can be selected for each Port • Available in 132-pin plastic quad flat package PQF , or space saving 120-pin thin quad flat package (TQFP)

Contextual Info: •HYUNDAI HYM532100A Series SEMICONDUCTOR 1M x 32-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM532100A is a 1M x 32-bit Fast page mode CMOS DRAM module consisting of eight HY514400A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22/iF decoupling capacitor Is mounted for each DRAM.

Contextual Info: HYUNDAI HYM532100A M-Series 1M x 32-blt CM O S DRAM MODULE DESCRIPTION The HYM532100A is a 1M x 32-bit Fast page mode CMO S DRAM module consisting of eight HY514400A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.2^uF decoupling capacitor is mounted for each DRAM.

Contextual Info: O K I Semiconductor M S C 2 3 8 3 7 A - x x B S 1 8 / D S 1 8 8,388,608-Word x 36-Bit DRAM M O DU LE : FAST PAGE M O DE TYPE D E S C R IP T IO N The OKI MSC23837A-xxBS18/DS18 is a fully decoded 8,388,608-word x 36-bit CMOS Dynamic Random Access M emory M odule com posed of eighteen 16-Mb DRAMs 4M x 4 in SOJ packages

quad port ram

Abstract: DS2015 32-PIN D062 DS1206 DS2011 DS2012 DS2012R
Contextual Info: DALLAS SEMICONDUCTOR CORP OTE D | S b m i 3 G 0DDE12b 0 I T '^ 6 '3 5 & Dallas Semiconductor 4 096x9 FIFO PRELIMINARY : DS2012 28-Pin DIP DS2012R 32-Pin PLCC a“ FEATURES PIN CONNECTIONS • First-in, first-out memory based architecture • Flexible 4096 x 9 organization

RS-422A

Abstract: SN65ALS176 SN75ALS176 SN75ALS176A SN75ALS176B
Contextual Info: SN65ALS176, SN75ALS176, SN75ALS176A, SN75ALS176B DIFFERENTIAL BUS TRANSCEIVERS S L L S 0 4 0 D -D 3 0 4 2 . A U G U S T 1987 - RE V IS E D AU G U S T 1991 Meets EIA Standards RS-422A and RS-485 and CCITT Recommendations V.11 and X.27 D OR P PACKAGE TOP VIEW

Contextual Info: O K I Semiconductor MSC23T/P1720C-XXBS18 1,048,576-Word x 72-Bit DRAM MODULE : FAST PAGE MODE TYPE DESCRIPTION T he O K I M SC23T/D 1720C-xxBS18 is a fu lly decoded 1,048,576-w o rd x 72-bit C M O S D yn am ic R an d o m A ccess M e m o ry M o d u le com posed o f eighteen 4-Mb D R A M s 1 M x 4 in T S O P o r S O J

Contextual Info: LT1180A/LT1181A L iim TECHNOLOGY Low Power 5V RS232 Dual Driver/Receiver with O.IjllF Capacitors F€flTUR€S DCSCRIPTIOn • ■ ■ ■ ■ ■ ■ ■ ■ The LT 1180A/LT1181A are dual RS232 driver/receiver pairs with integral charge pump to generate RS232 volt­