CQ 730 Search Results

sc11092

Abstract: sc11066 DY8 001 transformer transistor c1850 SC11011 C1650 C1850 DY9 transformer DY11 coil connection SC11077
Contextual Info: Entire Datasheet of 11094CV/CQ/CN International Semiconductor Technologies SC11094 Data Sheet Facsimile and Data Modem Analog Processor CONTENTS Features General Description Block Diagram Pin Description Functional Description Terms Of Sale go back to Products Offered

Contextual Info: National 3* Se mi c o n du c t j r CQ c/> c CLC452 S i n g l e S u p p l y , L o w - P o w e r , High O u t p u t , Current Feedback Amplifier General Description Features The CLC452 has a new output stage that delivers high output drive current 100mA , but consumes minimal quiescent supply

Contextual Info: MN0300A y MICRO NETWORKS HIGH-SPEED 12-Bit LINEAR T/H AMPLIFIER DESCRIPTION FEATURES • 3 0 0n s ec M ax A cq uisition T im e • 10V S te p to ± 0 .0 1 % • + 0 .0 1 % F S L in earity • 100psec M a xim u m A p e rtu re Jitter • +10V In p u t/O u tp u t R an ge

Contextual Info: MN0300A HIGH-SPEED 12-Bit LINEAR T/H AMPLIFIER MICRO NETWORKS DESCRIPTION FEATURES • 3 0 0 n s e c M a x A cq uisition T im e • 10V S te p to ± 0 .0 1 % • ± 0 .0 1 % F S L in earity • 100psec M a xim u m A p e rtu re Jitter • ±10V In p u t/O u tp u t R an ge

Contextual Info: ca t a l o g T H MICRO SWITCH A D IV ISIO N OF V 3L -121-P 8 SW IT C H -B A S 1C F R E E P O R T . IL L IN O IS . U .S .A . HONEYW ELL is t i n g CQ-B2I50 FE D . M F G . C O D E S f S S S — .17 CORROSION STEEL RESISTANT ACTUATOR j-»— 1.285 i.0 30' -.125 MAX

M51414BSP

Abstract: SG10
Contextual Info: ^ 5 ?! ^ Vi*- S Q . m o - E g S ^ s S S ^ I m. CO Zi O |v w H C O ^ Q • i i o > . $ t8 *°*n p z -OmO O O ¡2 f ^ X Q t u z UJ UJ lu Ä 2 § 0 > g «'’ à 2 9 o 9 9 9 O 5 æ 2 > X X > CD > h > > > OL ü t? CQ ïs û. 00 tu JB W lull/ w Tj- M 51414BSP

Contextual Info: N a t i o n a l Semi c o n du c t j r co 3* CQ c/> c CLC451 S i n g l e S u p p l y , L o w - P o w e r , High O u t p u t , P r o g r a m m a b le Buffer General Description Features The CLC451 is a low cost, high speed 85MHz buffer that features user-programmable gains of +2, +1, and -1V/V. It has a

TYN 208 equivalent

Abstract: bt 824 600b FR207 equivalent BRX49 equivalent MZ2361 equivalent BTA08-600C equivalent n4468 CS2181 TYN 276 BTA16-600B equivalent
Contextual Info: Index/Cross R e fe re n ce Industry Part Number Central Part Number Code Page Industry Part Number Central Part Number Code Page Industry Part Number Central Part Number Code Page 1N 34A 118 1N2977B 128 1N3320B 128 1N 60 118 1N2978B 128 1N3321B 128 1N 67 A

BRX49 equivalent

Abstract: FR207 equivalent 4835D TYN 208 equivalent BDW84C equivalent BTA16-600B equivalent BCX38C equivalent MP 1048 EM q4003l4 TYN208
Contextual Info: Index/Cross Reference Industry Part Number Central Part Number Page Industry Part Number 1N 34A 118 1N 60 Central Part Number Page Industry Part Number 1N968B 122 1N2838B 118 IN 969B 122 1N2839B 129 1N 67 A 118 1N970B 122 1N2840B 129 Code Code Central Part Number

BTA08-600C equivalent

Abstract: BTA16-600B equivalent BDW84C equivalent TYN 208 equivalent FR207 equivalent 2N3668 MDA2506 mda 2060 1n5399 equivalent 1N4465
Contextual Info: index/cross Reference Industry Part Number Central Part Number Page Industry Part Number 1N 34A 118 1N 60 118 1N 67A Central Part Number Page Industry Part Number 1N 968B 122 1N2838B 129 1N 969B 122 1N2839B 129 118 1N 970B 122 1N2840B 129 1N 87A 118 1N 971B

Contextual Info: Datasheet PD44325092B μPD44325182B μPD44325362B 36M-BIT QDRTM II SRAM 2-WORD BURST OPERATION R10DS0038EJ0200 Rev.2.00 August 11, 2011 Description The μPD44325092B is a 4,194,304-word by 9-bit, the μPD44325182B is a 2,097,152-word by 18-bit and the μPD44325362B is a 1,048,576-word by 36-bit synchronous quad data rate static RAM fabricated with

PD44647186AF5-E22-FQ1-A

Abstract: PD44647366AF5-E25-FQ1-A
Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT PD44647094A-A, 44647184A-A, 44647364A-A, 44647096A-A, 44647186A-A, 44647366A-A 72M-BIT QDRTM II+ SRAM 2.0 & 2.5 CLOCK CYCLES READ LATENCY 4-WORD BURST OPERATION Description The μPD44647094A-A and μPD44647096A-A are 8,388,608-word by 9-bit, the μPD44647184A-A and μPD44647186A-A

2N101

Abstract: 2J51A CQX18
Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT PD44646092A-A, 44646182A-A, 44646362A-A, 44646093A-A, 44646183A-A, 44646363A-A 72M-BIT DDR II+ SRAM 2.0 & 2.5 CLOCK CYCLES READ LATENCY 2-WORD BURST OPERATION Description The μPD44646092A-A and μPD44646093A-A are 8,388,608-word by 9-bit, the μPD44646182A-A and μPD44646183A-A

Contextual Info: Datasheet PD44165092B μPD44165182B μPD44165362B 18M-BIT QDRTM II SRAM 2-WORD BURST OPERATION R10DS0017EJ0200 Rev.2.00 October 6, 2011 Description The μPD44165092B is a 2,097,152-word by 9-bit, the μPD44165182B is a 1,048,576-word by 18-bit and the μPD44165362B is a 524,288-word by 36-bit synchronous quad data rate static RAM fabricated with advanced

2N101

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

K7R320884M

Abstract: K7R321884M K7R321884M-FC20 K7R321884M-FC25 K7R323684M K7R323684M-FC16 K7R323684M-FC20 K7R323684M-FC25 Q34D
Contextual Info: K7R323684M K7R321884M K7R320884M 1Mx36 & 2Mx18 & 4Mx8 QDR TM II b4 SRAM Document Title 1Mx36-bit, 2Mx18-bit, 4Mx8-bit QDRTM II b4 SRAM Revision History History Draft Date Remark 0.0 1. Initial document. June 30, 2001 Advance 0.1 1. Package dimension modify.

UPD443

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD44325084, 44325094, 44325184, 44325364 36M-BIT QDRTMII SRAM 4-WORD BURST OPERATION Description The µPD44325084 is a 4,194,304-word by 8-bit, the µPD44325094 is a 4,194,304-word by 9-bit, the µPD44325184 is a

CY7C1316JV18

Abstract: CY7C1318JV18 CY7C1320JV18 CY7C1916JV18
Contextual Info: CY7C1316JV18, CY7C1916JV18 CY7C1318JV18, CY7C1320JV18 18-Mbit DDR-II SRAM 2-Word Burst Architecture Features Functional Description • 18-Mbit density 2M x 8, 2M x 9, 1M x 18, 512K x 36 ■ 300 MHz clock for high bandwidth ■ 2-word burst for reducing address bus frequency

Contextual Info: K7R323684M K7R321884M K7R320884M Preliminary 1Mx36 & 2Mx18 & 4Mx8 QDR TM II b4 SRAM Document Title 1Mx36-bit, 2Mx18-bit, 4Mx8-bit QDRTM II b4 SRAM Revision History History Draft Date Remark 0.0 1. Initial document. June 30, 2001 Advance 0.1 1. Package dimension modify.

CY7C1318JV18

Abstract: CY7C1320JV18
Contextual Info: CY7C1318JV18 CY7C1320JV18 18 Mbit DDR II SRAM Two Word Burst Architecture Features Functional Description • 18 Mbit Density 1M x 18, 512K x 36 ■ 300 MHz Clock for High Bandwidth ■ Two word Burst for reducing Address Bus Frequency ■ Double Data Rate (DDR) Interfaces

Contextual Info: Datasheet R1Q4A4436RBG, R1Q4A4418RBG 144-Mbit DDR II SRAM 2-word Burst R10DS0146EJ0101 Rev.1.01 Nov 18, 2013 Description The R1Q4A4436RBG is a 4,194,304-word by 36-bit and the R1Q4A4418RBG is a 8,388,608-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor

Contextual Info: GS8182D08/09/18/36BD-375M 165-Bump BGA Military Temp 18Mb SigmaQuad-IITM Burst of 4 SRAM 375 MHz 1.8 V VDD 1.8 V and 1.5 V I/O Features Clocking and Addressing Schemes • Military Temperature Range • Simultaneous Read and Write SigmaQuad Interface • JEDEC-standard pinout and package

Contextual Info: CY7C1311JV18/CY7C1911JV18 CY7C1313JV18/CY7C1315JV18 18-Mbit QDR II SRAM 4-Word Burst Architecture Features Configurations • Separate Independent Read and Write Data Ports ❐ Supports concurrent transactions CY7C1311JV18 – 2M x 8 ■ 300 MHz Clock for High Bandwidth