CPD91 Search Results

r2 137

Abstract: CMPD6001 CPD91V CMDD6001 CMLD6001 CMLD6001DO CMOD6001
Contextual Info: PROCESS CPD91V Switching Diode Low Leakage Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 11 x 11 MILS Die Thickness 7.1 MILS Anode Bonding Pad Area 3.35 x 3.35 MILS Top Side Metalization Al - 15,000Å Back Side Metalization Au-As - 12,000Å

CMDD6001

Abstract: CMLD6001 CMLD6001DO CMOD6001 CMPD6001 CPD91V
Contextual Info: PROCESS CPD91V Switching Diode Low Leakage Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 11 x 11 MILS Die Thickness 7.1 MILS Anode Bonding pad Area 3.4 x 3.4 MILS Top Side Metalization Al - 15,000Å Back Side Metalization Au - 18,000Å

CPD91V

Abstract: CMDD6001 CMLD6001 CMLD6001DO CMOD6001 CMPD6001
Contextual Info: PROCESS CPD91V Central Switching Diode Semiconductor Corp. Low Leakage Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 11 x 11 MILS Die Thickness 7.1 MILS Anode Bonding pad Area 3.4 x 3.4 MILS Top Side Metalization Al - 15,000Å Back Side Metalization

diode

Abstract: CMDD6001 CMLD6001 CMLD6001DO CMOD6001 CMPD6001 CPD91 11x11
Contextual Info: PROCESS CPD91 Central Switching Diode Semiconductor Corp. Low Leakage Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 11 x 11 MILS Die Thickness 9.1 MILS Anode Bonding pad Area 3.4 x 3.4 MILS Top Side Metalization Al - 15,000Å Back Side Metalization

LT 5251

Abstract: DYNSLT ON5292 vn 530 sp 31 x 132 SC41-5715-00 BA 59 04 AFP LT 542 seven segment display data sheet 7 segment display LT 542 SST 90A 6B Diode NBR4
Contextual Info: AS/400e DDS Reference Version 4 AS/400e DDS Reference Version 4 Copyright International Business Machines Corporation 1999, 2000. All rights reserved. US Government Users Restricted Rights – Use, duplication or disclosure restricted by GSA ADP Schedule Contract

marking code fs

Contextual Info: Central” CMLD6001 DO Semiconductor Corp. SURFACE MOUNT PICO m inr DUAL, ISOLATED, OPPOSING LOW LEAKAGE SILICON SWITCHING DIODES DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLD6OOIDO type contains Two 2 Isolated Opposing Configuration, Silicon Switching Diodes, manufactured by the epitaxial

D102

Abstract: d1 marking diode
Contextual Info: Central CMPD6001 CMPD6001A CMPD6001C CMPD6001S Semiconductor Corp. SURFACE MOUNT LOW LEAKAGE SILICON SWITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD6001 series types are silicon switching diodes manufactured by the epitaxial planar process, designed for switching applications requiring an

Contextual Info: Central CMLD6001 TM Semiconductor Corp. SURFACE MOUNT PICO m inr DUAL, ISOLATED LOW LEAKAGE SILICON SWITCHING DIODES DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLD6001 type contains Two 2 Isolated Silicon Switching Diodes, manufactured by the epitaxial planar

CP588V

Abstract: CPD76 CPD96 CP-392V CP307 CP188 CP191 CPD48 CPD80 CPD91
Contextual Info: PCN #: 105 Notification Date: 24 November 2004 145 Adams Avenue Hauppauge, New York 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 Mailto: processchange@centralsemi.com http://www.centralsemi.com/processchange Process Change Notice Parts Affected: Small signal discrete semiconductors, wafers, and die in chip form.

CSI021

Abstract: cm15 jv capacitor LT 5216 153 SP-J BV EI 301 0546 fl016 052416 dm 0565 TA3M 100P6S-A
Contextual Info: <* ^>0^ Tentative Specifications REV.A ^ _ . . r . e s c r ip tio n . Mitsubishi microcomputers Specifications in this manual are tentative and subject to change. M 3 0 2 1 8 G r O lip SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER Description The M30218 group of single-chip microcomputers are built using the high-performance silicon gate CMOS

BF244 datasheet

Abstract: 2N5133 equivalent MPS5771 BD345 BD347 BF244 2n5248 bf256 2N3304 2n5910
Contextual Info: Index Industry Part Number Central Process No. Page # Industry Part Number 1N456 .CPD64 . 216 1N456A.CPD64 . 216 1N457 .CPD64 . 216

UJT 2n3904

Abstract: transistor 2N4033 ujt 2N6027 2n4209 datasheet mj15003 equivalent transistor 2N5401 mj15004 2N4393 MJ15003 MJ15004 BAV45
Contextual Info: Selection Guide Page Small Signal Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Bipolar Power Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Programmable UJT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24

Contextual Info: Central“ CMDD6001 Semiconductor Corp. SUPERmini SURFACE MOUNT LOW LEAKAGE SWITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMDD6001 type is a silicon switching diode manufactured by the epitaxial planar process, epoxy molded in a SUPERmini™ surface mount package, designed

DIODE marking 306

Contextual Info: Central“ CMOD6001 Semiconductor Corp. SURFACE MOUNT ULTRAmini LOW LEAKAGE SILICON SWITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMOD 6OOI type is a silicon switching diode manufactured by the epitaxiajjDlanar process, epoxy molded in a ULTRAmini1 surface mount package, designed

marking D3 SOT26

Abstract: LR1 DIODE MARKING CODE
Contextual Info: Central“ CMXD6001 Semiconductor Corp. SURFACE MOUNT SUPERmini TRIPLE ISOLATED LOW LEAKAGE SILICON SWITCHING DIODES DESCRIPTION: The CENTRAL SEMICONDUCTOR CMXD6001 type contains three 3 Isolated Silicon Switching Diodes, manufactured by the epitaxial planar

R1 marking

Contextual Info: Central" CMKD6001 Semiconductor Corp. SURFACE MOUNT ULTRAmini TRIPLE ISOLATED LOW LEAKAGE SILICON SWITCHING DIODES DESCRIPTION: The CENTRAL SEMICONDUCTOR CMKD6001 type contains three 3 Isolated Silicon Switching Diodes, manufactured by the epitaxial planar