CMLD6001 Search Results

CMLD6001

Contextual Info: CMLD6001 SURFACE MOUNT DUAL, ISOLATED ULTRA LOW LEAKAGE SILICON SWITCHING DIODES w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLD6001 type contains Two 2 Isolated Silicon Switching Diodes, manufactured by the epitaxial planar process, epoxy

PA marking code

Abstract: CMLD6001
Contextual Info: Central CMLD6001 TM Semiconductor Corp. SURFACE MOUNT PICOmini DUAL, ISOLATED LOW LEAKAGE SILICON SWITCHING DIODES DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLD6001 type contains Two 2 Isolated Silicon Switching Diodes, manufactured by the epitaxial planar

CMLD6001DO

Contextual Info: CMLD6001DO SURFACE MOUNT DUAL, ISOLATED, OPPOSING LOW LEAKAGE SILICON SWITCHING DIODES w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLD6001DO type contains Two 2 Isolated Opposing Configuration, Silicon Switching Diodes, manufactured by the epitaxial

c60 equivalent

Abstract: CMLD6001DO
Contextual Info: CMLD6001DO SURFACE MOUNT PICOmini DUAL, ISOLATED, OPPOSING LOW LEAKAGE SILICON SWITCHING DIODES Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLD6001DO type contains Two 2 Isolated Opposing Configuration, Silicon Switching Diodes, manufactured by the epitaxial

marking code fs

Contextual Info: Central” CMLD6001 DO Semiconductor Corp. SURFACE MOUNT PICO m inr DUAL, ISOLATED, OPPOSING LOW LEAKAGE SILICON SWITCHING DIODES DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLD6OOIDO type contains Two 2 Isolated Opposing Configuration, Silicon Switching Diodes, manufactured by the epitaxial

CMLD6001DO

Contextual Info: Central CMLD6001DO TM Semiconductor Corp. SURFACE MOUNT PICOmini DUAL, ISOLATED, OPPOSING LOW LEAKAGE SILICON SWITCHING DIODES DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLD6001DO type contains Two 2 Isolated Opposing Configuration, Silicon Switching Diodes, manufactured by the epitaxial

CMLD6001

Contextual Info: CMLD6001 SURFACE MOUNT DUAL, ISOLATED LOW LEAKAGE SILICON SWITCHING DIODES w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLD6001 type contains Two 2 Isolated Silicon Switching Diodes, manufactured by the epitaxial planar process, epoxy

Contextual Info: CMLD6001DO SURFACE MOUNT DUAL, ISOLATED, OPPOSING ULTRA LOW LEAKAGE SILICON SWITCHING DIODES w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLD6001DO type contains Two 2 Isolated Opposing Configuration, Silicon Switching Diodes, manufactured by the epitaxial

CMLD6001

Contextual Info: CMLD6001 SURFACE MOUNT PICOmini DUAL, ISOLATED LOW LEAKAGE SILICON SWITCHING DIODES Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLD6001 type contains Two 2 Isolated Silicon Switching Diodes, manufactured by the epitaxial planar

Contextual Info: Central CMLD6001 TM Semiconductor Corp. SURFACE MOUNT PICO m inr DUAL, ISOLATED LOW LEAKAGE SILICON SWITCHING DIODES DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLD6001 type contains Two 2 Isolated Silicon Switching Diodes, manufactured by the epitaxial planar

Contextual Info: CMLD6001DO SURFACE MOUNT SILICON DUAL, ISOLATED, OPPOSING ULTRA LOW LEAKAGE SWITCHING DIODE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLD6001DO type contains two 2 isolated opposing configuration, silicon switching diodes, manufactured by the epitaxial

Contextual Info: CMLD6001 SURFACE MOUNT SILICON DUAL, ISOLATED ULTRA LOW LEAKAGE SWITCHING DIODE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLD6001 type contains two 2 isolated silicon switching diodes, manufactured by the epitaxial planar process, epoxy

Contextual Info: CMLD6001DO SURFACE MOUNT DUAL, ISOLATED, OPPOSING ULTRA LOW LEAKAGE SILICON SWITCHING DIODES w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLD6001DO type contains Two 2 Isolated Opposing Configuration, Silicon Switching Diodes, manufactured by the epitaxial

Contextual Info: CMLD6001 SURFACE MOUNT DUAL, ISOLATED ULTRA LOW LEAKAGE SILICON SWITCHING DIODES w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLD6001 type contains Two 2 Isolated Silicon Switching Diodes, manufactured by the epitaxial planar process, epoxy

CMPZ4124

Abstract: CMZ5930B CMZ5945B CMZ5947B Transistor 1602c BC327/transistor bc547 bk 045 CMPZ4618 CMPZ4614 CMZ5948B CMZ5936B
Contextual Info: Small Signal Transistors U.S Specifications Preferred Series SOT-23 Case, 350mW (Continued on next page) b v Ce o b v ebo •SVcES 'CBO VCB *'CEV ® VCE (V) (V) (V) (V) (nA) j MIN M.N MIN MAX 1 hFE @ IC ® VCE (mA) MIN 1 General Purpose Amplifiers/Switches

FSQ510 Equivalent

Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
Contextual Info: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178

4E smd diode

Abstract: Zener diode quad surface mount smd schottky diode A2 SOD-123 Schottky Diode SOT-89 smd transistor 662 composition of material used in zener diode smd transistor 662 x SMD transistor 123 CMPZDC47V CMXZ47VTO
Contextual Info: N ew To T he 2 □□< 4 E di ti on New additions to the 2004 SMD Databook The following pages outline the latest additions to this edition of the surface mount devices databook. Over 90 new devices manufactured by Central Semiconductor have been added, as well as the new material composition data section. To keep up to date on all the latest

BZX 48c 6v8

Abstract: PT2369 code Cj5 CMXZ11VTO 7006S
Contextual Info: M arking Codes Marking Code Part Number 04 04D 04A 04C 04S 040 1A 1A8 1AC 1B 1B8 1C8 1D8 1E 1E8 1F 1F8 1FF 1G 1G8 1H8 1J 1J8 1K 1K8 1L 1L8 1M8 1P 1PC 1QC 1RC 2AC 2B 2C 2C A 2F 2FC 2G 2 PC 2Q C 2P 3A 3AE 3B 3CE 3E 3F 3G 3J 3K 3L 3P 3SE 4A 4B 4C 4E 4F 4G 4P

r2 137

Abstract: CMPD6001 CPD91V CMDD6001 CMLD6001 CMLD6001DO CMOD6001
Contextual Info: PROCESS CPD91V Switching Diode Low Leakage Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 11 x 11 MILS Die Thickness 7.1 MILS Anode Bonding Pad Area 3.35 x 3.35 MILS Top Side Metalization Al - 15,000Å Back Side Metalization Au-As - 12,000Å

CMDD6001

Abstract: CMLD6001 CMLD6001DO CMOD6001 CMPD6001 CPD91V
Contextual Info: PROCESS CPD91V Switching Diode Low Leakage Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 11 x 11 MILS Die Thickness 7.1 MILS Anode Bonding pad Area 3.4 x 3.4 MILS Top Side Metalization Al - 15,000Å Back Side Metalization Au - 18,000Å

3SMC30A

Abstract: CMPZ4614 P6SMB56CA CMSD4448 sod-80 stabistor 882L CMOZ20V STB-400 3smc60ca CMZ5945B
Contextual Info: Diodes Surface Mount Packages Actual Size SOD-923 SOT-923 SOT-953 SOD-523 SOT-523 SOT-563 SOD-323 SOT-323 SOT-363 SOD-123 SOD-123F SOT-23 SOT-23F SOT-143 SOT-26 SOT-28 SOT-89 SOT-223 SOT-228 SMA SMB SMC SOIC-16 HD DIP TLP Tiny Leadless Package Bottom View

CPD91V

Abstract: CMDD6001 CMLD6001 CMLD6001DO CMOD6001 CMPD6001
Contextual Info: PROCESS CPD91V Central Switching Diode Semiconductor Corp. Low Leakage Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 11 x 11 MILS Die Thickness 7.1 MILS Anode Bonding pad Area 3.4 x 3.4 MILS Top Side Metalization Al - 15,000Å Back Side Metalization

BF244 datasheet

Abstract: 2N5133 equivalent MPS5771 BD345 BD347 BF244 2n5248 bf256 2N3304 2n5910
Contextual Info: Index Industry Part Number Central Process No. Page # Industry Part Number 1N456 .CPD64 . 216 1N456A.CPD64 . 216 1N457 .CPD64 . 216

diode

Abstract: CMDD6001 CMLD6001 CMLD6001DO CMOD6001 CMPD6001 CPD91 11x11
Contextual Info: PROCESS CPD91 Central Switching Diode Semiconductor Corp. Low Leakage Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 11 x 11 MILS Die Thickness 9.1 MILS Anode Bonding pad Area 3.4 x 3.4 MILS Top Side Metalization Al - 15,000Å Back Side Metalization