CP59 Search Results

2N2907A

Abstract: 2N2905A CMPT2907A CMST2907A CXT2907A CZT2907A PN2907A 2N2907A die
Contextual Info: PROCESS CP591X Small Signal Transistor PNP - Amp/Switch Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 19 x 19 MILS Die Thickness 5.9 MILS Base Bonding Pad Area 3.5 x 4.3 MILS Emitter Bonding Pad Area 3.5 x 4.5 MILS Top Side Metalization

2n3906

Abstract: 2N3906 die CZT3906 2n3906 equivalent transistor transistor 2N3906 CMKT3906 CMLT3906E CMPT3906 CMST3906 CP592V
Contextual Info: PROCESS CP592V Small Signal Transistors PNP - Amp/Switch Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 12 x 20 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 3.6 X 3.6 MILS Emitter Bonding Pad Area 3.6 X 3.6 MILS Top Side Metalization

2N2907A die

Abstract: 2N2907A PN2907A equivalent 2N2907A 2N2905A CMPT2907A CMST2907A CP591V CXT2907A CZT2907A
Contextual Info: PROCESS CP591V Small Signal Transistor PNP - Amp/Switch Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 19 x 19 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 3.5 x 4.3 MILS Emitter Bonding Pad Area 3.5 x 4.5 MILS Top Side Metalization

transistor 2n4403 equivalent

Abstract: 2n4403 chip PNP 2N4403 transistor Transistor switch 2N4403 2N5366 CP593
Contextual Info: PROCESS CP593 Small Signal Transistors PNP - Amp/Switch Transistor Chip PROCESS DETAILS Process Epitaxial Planar Die Size 19 x 19 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 3.5 x 4.3 MILS Emitter Bonding Pad Area 3.5 x 4.5 MILS Top Side Metalization

2N3906 die

Abstract: 2N3906 CXT3906 CZT3906 2N3906 Central 2n3906 equivalent transistor CMPT3906 CMST3906 CP592 chip die pnp transistor
Contextual Info: PROCESS CP592 Central Small Signal Transistor TM Semiconductor Corp. PNP - Amp/Switch Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 12 x 20 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 3.6 X 3.6 MILS Emitter Bonding Pad Area 3.6 X 3.6 MILS

2N2907A die

Abstract: PN2907A
Contextual Info: PROCESS CP591V Small Signal Transistor PNP - Amp/Switch Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 19 x 19 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 3.5 x 4.3 MILS Emitter Bonding Pad Area 3.5 x 4.5 MILS Top Side Metalization

2N4403

Abstract: 2N5366 CP593 2n4403 chip
Contextual Info: PROCESS CP593 Small Signal Transistor PNP - Amp/Switch Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 19 X 19 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 3.5 X 4.3 MILS Emitter Bonding Pad Area 3.5 X 4.5 MILS Top Side Metalization

MPQ6700

Abstract: 2N3904 die 2N3906 die CP192-CMPT3904-CT CP592-2N3251-CT MPQ3904 2N3904 2n3904 surface mount 2N3904 geometry MPQ6700 equivalent
Contextual Info: PCN # 107 Notification Date: 29 June 2006 mailto:processchange@centralsemi.com http://www.centralsemi.com/processchange Process Change Notice Parts Affected: Chip processes CP192V NPN and CP592V(PNP), small signal discrete semiconductors, wafers, and die in chip form.

2N3906 die

Abstract: 2n3906 equivalent transistor 2n3906 data sheet transistor 2n3906 CZT3906 CXT3906 PNP 2N3906 CMKT3906 2n3906 datasheet transistor 2N3906 datasheet
Contextual Info: PROCESS CP592V Small Signal Transistors PNP - Amp/Switch Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 12 x 20 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 3.6 X 3.6 MILS Emitter Bonding Pad Area 3.6 X 3.6 MILS Top Side Metalization

2N4403

Abstract: 2N5366 CP593 2n4403 chip
Contextual Info: PROCESS CP593 Small Signal Transistor PNP - Amp/Switch Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 19 x 19 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 3.5 x 4.3 MILS Emitter Bonding Pad Area 3.5 x 4.5 MILS Top Side Metalization

02-06-1201

Contextual Info: PART NO. ENG. NO. I787-CP9 1 I787- P90 l)L I787-CP59 1) I787-(P59 l)L I787-(P550) I787-(P550)L 02-06-1201 0 2 -0 6 - 1202 02 -0 6 -5 2 0 5 0 2 -0 6 -5 2 0 6 02-06-5201 02 -0 6 -5 2 0 2 OBSOLETE (3.20) OBSOLETE CARRIER VIEW ACTUAL SIZE (.25) T 0 ^ m axCARRIER CUTOFF

equivalent 2N2907A

Abstract: 2N2905A 2N2907A CMPT2907A CMST2907A CP591V CXT2907A CZT2907A PN2907A 2N2907A die
Contextual Info: PROCESS CP591V Small Signal Transistor PNP - Amp/Switch Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 19 x 19 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 3.5 x 4.3 MILS Emitter Bonding Pad Area 3.5 x 4.5 MILS Top Side Metalization

2N2907A die

Abstract: CHIP TRANSISTOR 2n2905a 2N2905a equivalent ELECTRONIC TRANSISTOR CORP 2N2907A CMPT2907A CMST2907A CP591V CXT2907A
Contextual Info: PROCESS CP591V Central Small Signal Transistor TM Semiconductor Corp. PNP - Amp/Switch Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 19 x 19 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 3.5 x 4.3 MILS Emitter Bonding Pad Area 3.5 x 4.5 MILS

2N2905A

Abstract: 2N2907A CMPT2907A CMST2907A CP591 CXT2907A CZT2907A PN2907A
Contextual Info: PROCESS CP591 Central Small Signal Transistor TM Semiconductor Corp. PNP - Amp/Switch Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 19 x 19 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 3.5 x 4.3 MILS Emitter Bonding Pad Area 3.5 x 4.5 MILS

32K10K-400

Abstract: CP1005 12ah4 CFD06 IOG20 32k10k400 IOG11 12ah3 12AH-4 32K10K
Contextual Info: 4 3 2 1 4 3 2 1 STANDARD CLOCKS D D SOCKET OSC ON BOARD FPGA SUPPLIES 5V Jack OR C 5V Brick OR 5V Brick SMA OSC SMA DIFF MGT MGT MGT MGT 2X2 2X2 2X2 2X2 SMA SMA SMA SMA MGT MGT VCC3 C MGT CLOCKS System Ace MGT POWER MODULE 3.3V 2X2 2X2 2X1 VCORE 2X1 SMA SMA

3906 TRANSISTOR

Abstract: transistor pnp 3906 small signal transistor marking codes
Contextual Info: Central CMKT3904 NPN/NPN CMKT3906 PNP/PNP CMKT3946 NPN/PNP Semiconductor Corp. SURFACE MOUNT ULTRAmini™ DUAL SMALL SIGNAL SILICON SWITCHING TRANSISTORS FEATURES: • ULTRAmini™ SPACE SAVING PACKAGE • TWO NPN 3904 or TWO PNP (3906) TRANSISTORS IN A SINGLE PACKAGE

KI 2222A

Abstract: transistor 2222a sot-363 MARKING l0
Contextual Info: Central CMKT2207 Semiconductor Corp. SURFACE MOUNT ULTRAmini COMPLEMENTARY SILICON TRANSIS­ TORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMKT2207 consists of one 2222A NPN transistor and an individual isolated complementary 2907A PNP transistor, manufactured by the epitaxial planar

Contextual Info: Central CMLT2207 Semiconductor Corp. SURFACE MOUNT PICOmini DUAL,COMPLEMENTARY SILICON TRANSISTORS MAXIMUM RATINGS: DESCRIPTION: The Central Semiconductor CMLT2207 con­ sists of one 2N2222A NPN silicon transistor and one individual isolated complementary

C2F transistor pnp

Contextual Info: Central Semiconductor Corp. CMPT2907A DESCRIPTION: The Central Semiconductor CMPT2907A type is a PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a sur­ face mount package, designed for small signal general purpose and switching applications.

Contextual Info: Central" CXT2907A semiconductor Corp. SURFACE MOUNT PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CXT2907A type is an PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal

Contextual Info: Centrar CMPT3904E NPN CMPT3906E PNP Semiconductor Corp. EN H A N C E D SPECIFICATIO N DESCRIPTION: The Central Semiconductor CMPT3904E , CMPT3906E are Enhanced versions of the CMPT3904, CMPT3906 complementary switching transistors in a SOT-23 surface mount package,

SiI7172

Abstract: sil5744 SII9233 SII9125 SiI9233A SII9013 SIL5723 SiI7189 SiI9022A sil9002
Contextual Info: DTV Products Enabling the secure delivery and presentation of high-quality HD content everywhere. PORT PROCESSORS Target Applications Input/Output Input Resolution HDCP TMDS EDID CEC Package Size Starter Kit SiI9181A Front panel of DTVs, A/V receivers,

Contextual Info: Central“ CMST2907A Semiconductor Corp. SURFACE MOUNT SUPERmini PNP SILICON TRANSISTOR DESCRIPTION: The Central Semiconductor CMST2907A type is a PNP silicon transistor manufactured by the epi­ taxial planar process, epoxy molded in a SUPERmini™ surface mount package, designed

LB-215

Contextual Info: Central" CMXT2907A Semiconductor Corp. SURFACE MOUNT SUPERmini DUAL PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMXT2907A type is a dual PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a SUPERmini™ surface mount package, designed for