CMOS SRAM 16 Search Results

bq2201pn

Abstract: bq2201 BQ2201SN
Contextual Info: bq2201 SRAM Nonvolatile Controller Unit Features General Description ➤ Power monitoring and switching for 3-volt battery-backup applications The CMOS bq2201 SRAM Nonvolatile Controller Unit provides all necessary functions for converting a standard CMOS SRAM into nonvolatile

Contextual Info: DENSE-PAC M icrosystem s 16 Megabit CMOS SRAM 32 Megabit CMOS SRAM Memory Device ADVANCED INFORMATION DESCRIPTION: The PL-Stack series is a family of interchangeable memory modules. The 4 Megabit SRAM is a member of this family which utilizes the new and innovative space saving TSOP

Contextual Info: bq2201 SRAM Nonvolatile Controller Unit Features General Description ➤ Power monitoring and switching for 3-volt battery-backup applications The CMOS bq2201 SRAM Nonvolatile Controller Unit provides all necessary functions for converting a standard CMOS SRAM into nonvolatile

LP621024DM-70LLF

Abstract: LP621024DV-70LLF LP621024D-70LLF LP621024D-55LLF LP621024 LP621024DM70LLF LP621024D LP621024D-55LL LP621024D-70LL LP621024DM-55LL
Contextual Info: LP621024D Series 128K X 8 BIT CMOS SRAM Document Title 128K X 8 BIT CMOS SRAM Revision History Rev. No. 1.1 History Issue Date Remark Add Pb-Free package type August 19, 2004 Final August, 2004, Version 1.1 AMIC Technology, Corp. LP621024D Series 128K X 8 BIT CMOS SRAM

Contextual Info: bq2201 SRAM Nonvolatile Controller Unit Features General Description ➤ Power monitoring and switching for 3-volt battery-backup applications The CMOS bq2201 SRAM Nonvolatile Controller Unit provides all necessary functions for converting a standard CMOS SRAM into nonvolatile

Contextual Info: bq2201 SRAM Nonvolatile Controller Unit Features General Description ➤ Power monitoring and switching for 3-volt battery-backup applications The CMOS bq2201 SRAM Nonvolatile Controller Unit provides all necessary functions for converting a standard CMOS SRAM into nonvolatile

Contextual Info: HY62UF16101 Series 64Kx16bit full CMOS SRAM DESCRIPTION FEATURES The HY62UF16101 is a high speed, low power and 1M bit full CMOS SRAM organized as 65,536 words by 16bit. The HY62UF16101 uses high performance full CMOS process technology and designed for high speed low power circuit

Contextual Info: bq2201 SRAM Nonvolatile Controller Unit Features General Description ➤ Power monitoring and switching for 3-volt battery-backup applications The CMOS bq2201 SRAM Nonvolatile Controller Unit provides all necessary functions for converting a standard CMOS SRAM into nonvolatile

Contextual Info: HY62UF16401A/ HY62QF16401A/ HY62EF16401A/ HY62SF16401A Series 256Kx16bit full CMOS SRAM PRELIMINARY DESCRIPTION FEATURES The HY62UF16401A / HY62QF16401A / HY62EF16401A / HY62SF16401A is a high speed, super low power and 4Mbit full CMOS SRAM organized as 262,144 words by 16bits. The

LP621024D-70LLTF

Abstract: LP621024D-55LLT LP621024D-70LLT LP621024DM-55LLT LP621024DM-T LP621024D-T
Contextual Info: LP621024D-T Series 128K X 8 BIT CMOS SRAM Document Title 128K X 8 BIT CMOS SRAM Revision History Rev. No. 1.1 History Issue Date Remark Add Pb-Free package type August 19, 2004 Final August, 2004, Version 1.1 AMIC Technology, Corp. LP621024D-T Series 128K X 8 BIT CMOS SRAM

Contextual Info: HY62UF16400A/ HY62QF16400A/ HY62EF16400A/ HY62SF16400A Series 256Kx16bit full CMOS SRAM PRELIMINARY DESCRIPTION FEATURES The HY62UF16400A / HY62QF16400A / HY62EF16400A / HY62SF16400A is a high speed, super low power and 4Mbit full CMOS SRAM organized as 262,144 words by 16bits. The

HY62QF16200A

Contextual Info: HY62UF16200A/ HY62QF16200A/ HY62EF16200A/ HY62SF16200A Series 128Kx16bit full CMOS SRAM PRELIMINARY DESCRIPTION FEATURES The HY62UF16200A / HY62QF16200A / HY62EF16200A / HY62SF16200A is a high speed, super low power and 2Mbit full CMOS SRAM organized as 131,072 words by 16bits. The

HY62SF16201A

Abstract: HY62SF16201A-I HY62UF16201A HY62UF16201A-I
Contextual Info: HY62UF16201A/ HY62QF16201A/ HY62EF16201A/ HY62SF16201A Series 128Kx16bit full CMOS SRAM PRELIMINARY DESCRIPTION FEATURES The HY62UF16201A / HY62QF16201A / HY62EF16201A / HY62SF16201A is a high speed, super low power and 2Mbit full CMOS SRAM organized as 131,072 words by 16bits. The

Contextual Info: HY62UF16400/ HY62QF16400/ HY62EF16400/ HY62SF16400 Series 256Kx16bit full CMOS SRAM PRELIMINARY DESCRIPTION FEATURES The HY62UF16400 / HY62QF16400 / HY62EF16400 / HY62SF16400 is a high speed, super low power and 4Mbit full CMOS SRAM organized as 262,144 words by 16bits. The

SM-1994

Contextual Info: HY62UF16200/ HY62QF16200/ HY62EF16200/ HY62SF16200 Series 128Kx16bit full CMOS SRAM PRELIMINARY DESCRIPTION FEATURES The HY62UF16200 / HY62QF16200 / HY62EF16200 / HY62SF16200 is a high speed, super low power and 2M bit full CMOS SRAM organized as 131,072 words by 16bits. The

Contextual Info: HY62UF16401 Series 256Kx16bit full CMOS SRAM PRELIMINARY DESCRIPTION FEATURES The HY62UF16401 is a high speed, low power and 4M bit full CMOS SRAM organized as 262,144 words by 16bit. The HY62UF16401 uses high performance full CMOS process technology and designed for high speed low power circuit

SM-1994

Contextual Info: HY62UF16201 Series 128Kx16bit full CMOS SRAM PRELIMINARY DESCRIPTION FEATURES The HY62UF16201 is a high speed, low power and 2M bit full CMOS SRAM organized as 131,072 words by 16bit. The HY62UF16201 uses high performance full CMOS process technology and designed for high speed low power circuit

Contextual Info: SRAM Austin Semiconductor, Inc. GENERAL DESCRIPTION 128K x 36 SSRAM The Austin Semiconductor, Inc. Zero Bus Latency SRAM family employs high-speed, low-power CMOS designs using an advanced CMOS process. ASI’s 4Mb ZBL SRAMs integrate a 128K x 36 SRAM core

123D

Abstract: AS5SS128K36
Contextual Info: SRAM Austin Semiconductor, Inc. GENERAL DESCRIPTION 128K x 36 SSRAM The Austin Semiconductor, Inc. Zero Bus Latency SRAM family employs high-speed, low-power CMOS designs using an advanced CMOS process. ASI’s 4Mb ZBL SRAMs integrate a 128K x 36 SRAM core

bga 6x8

Abstract: A62S8316
Contextual Info: A62S8316 Series Preliminary 256K X 16 BIT LOW VOLTAGE CMOS SRAM Document Title 256K X 16 BIT LOW VOLTAGE CMOS SRAM Revision History Rev. No. 0.0 PRELIMINARY History Issue Date Remark Initial issue February 12, 2001 Preliminary February, 2001, Version 0.0

AMIC TECHNOLOGY

Abstract: A62S8316 bga 6x8
Contextual Info: A62S8316 Series Preliminary 256K X 16 BIT LOW VOLTAGE CMOS SRAM Document Title 256K X 16 BIT LOW VOLTAGE CMOS SRAM Revision History Rev. No. 0.0 PRELIMINARY History Issue Date Remark Initial issue February 12, 2001 Preliminary February, 2001, Version 0.0

WED2ZL236512S35BC

Abstract: WED2ZL236512S38BC WED2ZL236512S42BC
Contextual Info: WED2ZL236512S 2 x 512K x 36 Synchronous Pipeline Burst NBL SRAM PRELIMINARY* FEATURES DESCRIPTION • Fast clock speed: 166, 150, 133, and 100MHz The WEDC SyncBurst - SRAM family employs high-speed, lowpower CMOS designs that are fabricated using an advanced CMOS

Contextual Info: White Electronic Designs WED2DL32512V 512Kx32 Synchronous Pipeline Burst SRAM FEATURES DESCRIPTION Fast clock speed: 200, 166, 150 & 133MHz The WEDC SyncBurst - SRAM family employs high-speed, low-power CMOS designs that are fabricated using an advanced CMOS process. WEDC’s 16Mb SyncBurst

WED2ZL361MV

Abstract: WED2ZL361MV35BC WED2ZL361MV38BC WED2ZL361MV42BC WED2ZL361MV50BC
Contextual Info: White Electronic Designs WED2ZL361MV 1Mx36 Synchronous Pipeline Burst NBL SRAM FEATURES DESCRIPTION Fast clock speed: 166, 150, 133, and 100MHz The WEDC SyncBurst — SRAM family employs highspeed, low-power CMOS designs that are fabricated using an advanced CMOS process. WEDC’s 32Mb