CMOS FAMILY Search Results

Contextual Info: CMOS SRAM KM684000A Family 512Kx8 bit High Speed CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.4 urn CMOS The KM684000A family is fabricated by SAMSUNG'S advanced CMOS process technology. The family • Organization : 512K x8

TSOP 173 g

Abstract: KM684000ALG-7 4000 CMOS KM684000ALGI-7L KM684000ALP-7L KM684000ALP-5L KM684000A KM684000AL KM684000ALI KM684000ALI-L
Contextual Info: i, CMOS SRAM KM684000A Family 512Kx8 bit High Speed CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology: 0.4 um CMOS The KM684000A family is fabricated by SAMSUNG'S advanced CMOS process technology. The family • Organization : 512K x8

Contextual Info: Advance Information KM681000C Family 128Kx8 bit Low Power CMOS Static RAM CMOS SRAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.4 uM CMOS The • Organization : 128K x 8 • Power Supply Voltage : Single 5V +/-10% SAMSUNG'S advanced CMOS process technology.

nec 10f

Abstract: uPD65881 IC Ensemble mentor robot MM 5649 A1362 CMOS-N5 NEC lqfp 52
Contextual Info: 0.5µm CMOS Gate Array CMOS-N5 Family New s t c u Prod Features The CMOS-N5 family is a channel-less type gate array that provides high speed operation with a 5-V power supply voltage. Drastic cost reductions have been achieved compared with the conventional CMOS-6 and CMOS-8 families thanks to

transistor f422

Abstract: transistor f423 f422 transistor transistor f421 BV09 F423 fet 13187 RJ4B L442 bvoe
Contextual Info: CMOS-8LCX 3-VOLT, 0.50-MICRON CMOS GATE ARRAYS CROSSCHECK TEST SUPPORT NEC Electronics Inc. Preliminary Description October 1993 Figure 1. Various CMOS-8LCX Packages NEC’s 3-volt CMOS-8LCX family consists of ultra-high performance, sub-micron gate arrays, targeted for

F611

Contextual Info: NEC Electronics Inc. CMOS-8LHD 3.3-Volt, 0.5-Micron CMOS Gate Arrays Preliminary Description April 1996 Figure 1. CMOS-8LHD Package Options: BGA & QFP NEC's CMOS-8LHD gate-array family combines cellbased-level densities with the fast time-to-market and low

nec d 588

Abstract: nec naming rule nec product naming rule NEC CMOS-4
Contextual Info: CMOS-9 3.3-VO LT, 0 .35-MICRON CMOS GATE ARRAYS NEC NEC Electronics Inc. Preliminary March 1995 Description Figure 1. CMOS-9 Package Examples; BGA and QFP NEC's CMOS-9 gate array family provides designers with the performance capabilities and features required

uPD65801

Abstract: UPD65812 uPD65800 PD65810 PD65811 CMOS Transmission gate Specifications uPD65806 UPD65804 uPD65802 uPD65813
Contextual Info: NEC Electronics Inc. CMOS-8 5-VOLT, 0.6-MICRON CMOS GATE ARRAYS August 1995 Figure 1. Sample CMOS-8 Packages Description NEC’s 5-volt CMOS-8 family are high performance, submicron gate arrays, targeted for applications requiring extensive integration and high speeds. The device

Contextual Info: KM68512A Family CMOS SRAM 64Kx8 bit Low Power CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.6 um CMOS The KM68512A family is fabricated by SAMSUNG'S • Organization : 64K x8 advanced CMOS process technology. The family • Power Supply Voltage : Single 5V +/-10%

AO4L

Abstract: ld3p AO15A AO16A FD3S AO15AN AO23L BT8C datasheet MTC-35400 mux2*1
Contextual Info: MTC-35000 CMOS 0.5µ Standard Cell Library Services October ‘98 CMOS Family Features • Technology - 0.5µ CMOS for mixed analog 2 digital application - 0.5 micron CMOS transistors, triple layer metal, single or doble poly layer - Self-aligned twin tub Nand P-wells

bv0T

Abstract: F423 FV06 RJ4B 83YL-9164B "Single-Port RAM" B00J transistor f423 bewf diode ru4d
Contextual Info: CMOS-8L 3-VOLT, 0.50-MICRON CMOS GATE ARRAYS NEC Electronics Inc. Preliminary Description October 1993 Figure 1. Various CMOS-8L Packages NEC’s 3-volt CMOS-8L family consists of ultra-high performance, sub-micron gate arrays, targeted for applications requiring extensive integration and high

F611

Abstract: L302 L611
Contextual Info: NEC Electronics Inc. CMOS-8LH 3.3-Volt, 0.5-Micron CMOS Gate Arrays Preliminary April 1996 Description Figure 1. CMOS-8LH Package Options: BGA & QFP NEC's CMOS-8LH gate-array family consists of ultra-high performance, sub-micron gate arrays, targeted for applications requiring extensive integration and high

intersil im6100

Abstract: IM6100 EPROM programmer im6653 6920
Contextual Info: DMÜÜlDIL 6920 CMOS EPROM Programmer FEATURES DESCRIPTION • Programs Intersil's IM6653/54 CMOS EPROM Intersil’s 6920 CMOS EÇROM programmer is a multimode cost effective instrument used to program Intersil’s IM6653/54 family of CMOS EPROMs. The 6920 is microprocessor controlled, allowing the

D65842

Abstract: diode ru4d 136-Pin CMOS7 BV09 180 nm CMOS standard cell library Synopsys
Contextual Info: SEC CMOS-8L 3-VOLT, 0.50-M ICRON CMOS GATE ARRAYS NEC Electronics Inc. Prelim inary Description O cto b er 1992 Figure 1. Various CMOS-8L Packages NEC’s 3-volt CMOS-8L family are ultra-high perform­ ance, sub-micron gate arrays, targeted for applications

D65806

Abstract: 9215K1
Contextual Info: tFEB i 7 1993 CMOS-8 5 VOLT, 0 .65-MICRON CMOS GATE ARRAYS NEC Electronics Inc. Prelim inary January 1993 Figure 1. Sample CMOS-8 Packages Description NEC’s 5-volt CMOS-8 family are ultra-high performance, sub-m icron gate arrays, targe te d fo r a pp lications

BU16000 Series

Abstract: BU16503 BU25507 BU16513 BU16311 BU25309 16848 BU25306 BU25307 BU25308
Contextual Info: CMOS Gate Array CMOS Gate Array High Speed CMOS Gate Array BU25000 Series The BU25000 series gate arrays have a Sea-of-Gates SOG structure fabricated with a 0.5 micro metre CMOS process. The BU25300 is the base family for 3V systems, and the BU25500 Series is the base sevies for the 5V systems.

uPD65801

Abstract: uPD65800 UPD65804
Contextual Info: CMOS-8 5-VOLT, 0.6-MICRON CMOS GATE ARRAYS NEC NEC Electronics Inc. August 1995 Figure 1. Sample CMOS-8 Packages Description NEC’s 5-volt CMOS-8 family are high performance, sub­ micron gate arrays, targeted for applications requiring e xtensive in te g ra tio n and high speeds. The device

upd6500

Abstract: F922 uPD65007 F981 IC tr f422 F661 CMOS GATE- NEC f422 f962 f791
Contextual Info: SEC CMOS-4L 1.5-M ICRON LOW-VOLTAGE CMOS GATE ARRAYS NEC Electronics Inc. February 1990 Description Figure 1. Sample CMOS-4L Packages NEC’s CMOS-4L family of 1.5-micron gate arrays are high-density, low-voltage application-specific integrated circuits ASICs that offer unique solutions for batterydriven circuits. Supply voltages ranging from 1.0 V to 5.5

004II

Abstract: a1215 KM68U512ALE-L KM68U512ALTGE-8L
Contextual Info: KM68V512A, KM68U512A Family_ CMOS SRAM 64Kx8 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.6 um CMOS • Organization : 64 K x 8 • Power Supply Voltage KM68V512A family : 3.3V +/- 0.3V

Contextual Info: HI3338 Semiconductor 8-Bit, CMOS R2R D/A Converter August 1997 Features Description • CMOS Low Power Typ . 100mW The HI3338 family are CMOS high speed R2R voltage output digital-to-analog converters. They can operate from a

Contextual Info: KM681000B Family CMOS SRAM 128K x8 bit Low Power CMOS Static RAM FEATURES GENERAL DESCRIPTION - The KM681000B family is fabricated by SAMSUNG'S advanced CMOS process technology. The family can support various operating temperature ranges and have various package types

KM6164000B

Abstract: KM6164000BLI-L KM6164000BL-L KM6164000BLT-5L KM6164000BLT-7L
Contextual Info: KM6164000B Family CMOS SRAM 256Kx16 bit Low Power CMOS Static RAM FEATURES GENERAL DESCRIPTION Process Technology : 0.4* • CMOS Organization : 256Kx16 Power Supply Voltage : Single 5V •• 10% Low Data Retention Voltage : 2V Min Three state output and TTL Compatible

km684000blp-7l

Abstract: km684000blp
Contextual Info: Prem ilinary KM684000B Family CMOS SRAM 512Kx8 bit Low Power CMOS Static RAM FEATURES GENERAL DESCRIPTION - The KM684000B family is fabricated by SAMSUNG'S advanced CMOS process technology. The family can support various operating temperature ranges and has various package types

KM68U1000B

Abstract: KM68V1000B
Contextual Info: CMOS SRAM KM68V1000B, KM68U1000B Family 128Kx8 bit Low Power & Low Vcc CMOS Static RAM GENERAL DESCRIPTION FEATURE SUMMARY • Process Technology: 0.6 um CMOS • Organization : 128Kx8 • Power Supply Voltage KM68V1000B fa m ily : 3.3V +/- 0.3V KM68U1000B family : 3.0V +/- 0.3V