CMOS FAMILY Search Results

Contextual Info: abêê . * * - * * » static CMOS _ Family ol ROMs March 1992 Table 2 continued : AMI HIGH DENSITY FAMILY OF ROMS COMMERCIAL TEMPERATURE 0° to 70°C Device Name S63312 S63302 S63414 S63434 Process CMOS CMOS CMOS CMOS CMOS Capacity 2 Meg

S634000

Abstract: S63512 S63256
Contextual Info: Static CMOS Family ol ROMs AIM!•Semiconductors March 1992 Table 1 continued : AMI LOW DENSITY FAMILY OF ROMS S63256 S63512 S631000/S631001 S632000 S634000 Process CMOS CMOS CMOS CMOS CMOS Capacity 256K/128K 512K 1 Meg 2 Meg 4 Meg Organization 32Kx8 64Kx8

Contextual Info: static CMOS _ Family of ROMs March 1992 III AMI LOW DENSITY FAMILY OF ROMS Table 1: S6316 S6333/S63332 S63364 S6364 S63128 Process CMOS CMOS CMOS CMOS CMOS Capacity 16K 32K 64K 64K 128K Organization 2Kx 8 4Kx8 8Kx8 8Kx8 16Kx8 Compatible EPROM

S63256

Contextual Info: Static CMOS A i w i i s ^ ^ _ Family ol ROMs March 1992 V AMI LOW VOLTAGE FAMILY OF ROMS COMMERCIAL TEMPERATURE 0° to 70°C Table 4:. S632000L S631000/001L S63512L S63256L S63128L Process CMOS CMOS CMOS CMOS CMOS Capacity 2 MEG 1 MEG

Contextual Info: Static CMOS Family o! ROMs •Semiconductors March 1992 Table 3: AMI HIGH DENSITY FAMILY OFROMS COMMERCIAL TEMPERATURE 0° to 70°C Device Name S63314 S63334 S63344 S63408 S63418 Process CMOS CMOS CMOS CMOS CMOS Capacity 4 Meg 4 Meg 4 Meg 8 Meg 8 Meg 512K X8

2732 cmos eprom

Contextual Info: A M II.W — Static CMOS Family of ROMs _ March 1992 Table 4 continued : AMI LOW VOLTAGE FAMILY OF ROMS COMMERCIAL TEMPERATURE 0° to 70°C Device Name S63364L S6333L/32 S6316L CMOS CMOS CMOS CMOS 64K 64K 32K 16K Organization 8Kx8 8Kx8

Contextual Info: static CMOS A M i .s^ ^ _ Family of ROMs March 1992 Table 3 continued : AMI HIGH DENSITY FAMILY OF ROMS COMMERCIAL TEMPERATURE 0° to 70°C S63308 S63318 S634017 CMOS CMOS CMOS CMOS Capacity 8 Meg 8 Meg 16 Meg 16 Meg Organization 1Mx8

Contextual Info: static CHIOS _ Family of ROMs March 1992 IV AMI HIGH DENSITY FAMILY OF ROMS COMMERCIAL TEMPERATURE 0° to 70°C Table 2:. S63442 S63321 S63331 S63412 S63422 Process CMOS CMOS CMOS CMOS CMOS Capacity 1 Meg 1 Meg 2 Meg 2 Meg 2 Meg 128K x 16

Contextual Info: CMOS SRAM KM684000A Family 512Kx8 bit High Speed CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.4 urn CMOS The KM684000A family is fabricated by SAMSUNG'S advanced CMOS process technology. The family • Organization : 512K x8

Contextual Info: KM681000B Family CMOS SRAM 128Kx8 bit High Speed CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology: 0.6 urn CMOS The KM681000B family is fabricated by SAMSUNG'S advanced CMOS process technology. The family • Organization : 128K x 8

TSOP 173 g

Abstract: KM684000ALG-7 4000 CMOS KM684000ALGI-7L KM684000ALP-7L KM684000ALP-5L KM684000A KM684000AL KM684000ALI KM684000ALI-L
Contextual Info: i, CMOS SRAM KM684000A Family 512Kx8 bit High Speed CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology: 0.4 um CMOS The KM684000A family is fabricated by SAMSUNG'S advanced CMOS process technology. The family • Organization : 512K x8

KM62256CLP-7

Contextual Info: KM62256C CMOS SRAM ELECTRONICS 32Kx8 bit Low Power CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.7 um CMOS The KM62256C family is fabricated by SAMSUNG'S • Organization : 32K x 8 advanced CMOS process technology. The family

Contextual Info: Advance Information KM681000C Family 128Kx8 bit Low Power CMOS Static RAM CMOS SRAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.4 uM CMOS The • Organization : 128K x 8 • Power Supply Voltage : Single 5V +/-10% SAMSUNG'S advanced CMOS process technology.

nec 10f

Abstract: CMOS-N5 uPD65881 UPD65883 nec 44 pin LQFP nec 44-pin QFP upd65882 UPD65884 MM 5649
Contextual Info: 0.5µm CMOS Gate Array CMOS-N5 Family New s t c u d o r P Features The CMOS-N5 family is a channel-less type gate array that provides high speed operation with a 5-V power supply voltage. Drastic cost reductions have been achieved compared with the conventional CMOS-6 and CMOS-8 families thanks to

transistor f422

Abstract: transistor f423 f422 transistor transistor f421 BV09 F423 fet 13187 RJ4B L442 bvoe
Contextual Info: CMOS-8LCX 3-VOLT, 0.50-MICRON CMOS GATE ARRAYS CROSSCHECK TEST SUPPORT NEC Electronics Inc. Preliminary Description October 1993 Figure 1. Various CMOS-8LCX Packages NEC’s 3-volt CMOS-8LCX family consists of ultra-high performance, sub-micron gate arrays, targeted for

F611

Contextual Info: NEC Electronics Inc. CMOS-8LHD 3.3-Volt, 0.5-Micron CMOS Gate Arrays Preliminary Description April 1996 Figure 1. CMOS-8LHD Package Options: BGA & QFP NEC's CMOS-8LHD gate-array family combines cellbased-level densities with the fast time-to-market and low

nec d 588

Abstract: nec naming rule nec product naming rule NEC CMOS-4
Contextual Info: CMOS-9 3.3-VO LT, 0 .35-MICRON CMOS GATE ARRAYS NEC NEC Electronics Inc. Preliminary March 1995 Description Figure 1. CMOS-9 Package Examples; BGA and QFP NEC's CMOS-9 gate array family provides designers with the performance capabilities and features required

KM68V4000AL-L

Abstract: KM68U4000A lm68
Contextual Info: KM68V4000A, KM68U4000A Family CMOS SRAM 512K x8 bit Low Power and Low Voltage CMOS Static RAM FEATURES GENERAL DESCRIPTION . Process Technology : O .V n CMOS • Organization : 512Kx8 The KM68V400QA and KM68U4000A family is fabricated by SAMSUNG'S advanced CMOS process technology. The family

Contextual Info: KM68V4000A Family CMOS SRAM 512Kx8 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION >Process Technology : 0.4 um CMOS The >Organization : 512K x 8 SAMSUNG'S advanced CMOS process technology. KM68V4000A family is fabricated by >Power Supply Voltage : 3.3 +/- 0.3V

uPD65801

Abstract: UPD65812 uPD65800 PD65810 PD65811 CMOS Transmission gate Specifications uPD65806 UPD65804 uPD65802 uPD65813
Contextual Info: NEC Electronics Inc. CMOS-8 5-VOLT, 0.6-MICRON CMOS GATE ARRAYS August 1995 Figure 1. Sample CMOS-8 Packages Description NEC’s 5-volt CMOS-8 family are high performance, submicron gate arrays, targeted for applications requiring extensive integration and high speeds. The device

A2ND

Abstract: KM68U512ALE-L KM68V512A
Contextual Info: KM68V512A, KM68U512A Family CMOS SRAM 64Kx8 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.6 um CMOS • Organization : 64K x 8 • Power Supply Voltage The KM68V512A and KM68U512A family are fabricated by SAMSUNG'S advanced CMOS process

Contextual Info: KM68512A Family CMOS SRAM 64Kx8 bit Low Power CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.6 um CMOS The KM68512A family is fabricated by SAMSUNG'S • Organization : 64K x8 advanced CMOS process technology. The family • Power Supply Voltage : Single 5V +/-10%

AO4L

Abstract: ld3p AO15A AO16A FD3S AO15AN AO23L BT8C datasheet MTC-35400 mux2*1
Contextual Info: MTC-35000 CMOS 0.5µ Standard Cell Library Services October ‘98 CMOS Family Features • Technology - 0.5µ CMOS for mixed analog 2 digital application - 0.5 micron CMOS transistors, triple layer metal, single or doble poly layer - Self-aligned twin tub Nand P-wells

bv0T

Abstract: F423 FV06 RJ4B 83YL-9164B "Single-Port RAM" B00J transistor f423 bewf diode ru4d
Contextual Info: CMOS-8L 3-VOLT, 0.50-MICRON CMOS GATE ARRAYS NEC Electronics Inc. Preliminary Description October 1993 Figure 1. Various CMOS-8L Packages NEC’s 3-volt CMOS-8L family consists of ultra-high performance, sub-micron gate arrays, targeted for applications requiring extensive integration and high