CMOS 4091 Search Results
CMOS 4091 Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| MD82C54/B | Rochester Electronics LLC | 82C54 - CMOS Programmable Timer |
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| MD8748H/B | Rochester Electronics LLC | 8748H - RISC Microcontroller, CMOS |
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| MD80C287-10/B | Rochester Electronics LLC | 80C287 - Microcontroller, CMOS |
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| DS1633J-8/B | Rochester Electronics LLC | DS1633 - CMOS Dual Peripheral Drivers |
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| MD87C51FC/B | Rochester Electronics LLC | 87C51FC - Microcontroller, 8-Bit, UVPROM, 12MHz, CMOS, CDIP40 |
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CMOS 4091 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: HY62SF16100C Series 64Kx16bit full CMOS SRAM PRELIMINARY DESCRIPTION FEATURES The HY62SF16100C is a high speed, super low power and 1M bit full CMOS SRAM organized as 65,536 words by 16bit. The HY62SF16100C uses high performance full CMOS process technology |
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Contextual Info: HY62SF16101C Series 64Kx16bit full CMOS SRAM PRELIMINARY DESCRIPTION FEATURES The HY62SF16101C is a high speed, super low power and 1M bit full CMOS SRAM organized as 65,536 words by 16bit. The HY62SF16101C uses high performance full CMOS process technology |
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Contextual Info: HY62SF16201A Series 128Kx16bit full CMOS SRAM DESCRIPTION FEATURES The HY62SF16201A is a high speed, low power and 2M bit full CMOS SRAM organized as 131,072 words by 16bit. The HY62SF16201A uses high performance full CMOS process technology and designed for high speed low |
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Contextual Info: HY62SF16100 Series 64Kx16bit full CMOS SRAM DESCRIPTION FEATURES The HY62SF16100 is a high speed, low power and 1M bit full CMOS SRAM organized as 65,536 words by 16bit. The HY62SF16100 uses high performance full CMOS process technology and designed for high speed low power circuit |
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Contextual Info: HY62SF16803A Series 512Kx16bit full CMOS SRAM Preliminary DESCRIPTION FEATURES The HY62SF16803A is a high speed, super low power and 8Mbit full CMOS SRAM organized as 524,288 words by 16bits. The HY62SF16803A uses high performance full CMOS process technology and is designed for high speed and |
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Contextual Info: HY62SF16803A Series 512Kx16bit full CMOS SRAM Preliminary DESCRIPTION FEATURES The HY62SF16803A is a high speed, super low power and 8Mbit full CMOS SRAM organized as 524,288 words by 16bits. The HY62SF16803A uses high performance full CMOS process technology and is designed for high speed and |
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Contextual Info: HY62SF8100 Series 128Kx8bit full CMOS SRAM DESCRIPTION FEATURES The HY62SF8100 is a high speed, low power and 1M bit full CMOS SRAM organized as 131,072 words by 8bit. The HY62SF8100 uses high performance full CMOS process technology and designed for high speed low power circuit |
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Contextual Info: HY62SF16200A Series 128Kx16bit full CMOS SRAM DESCRIPTION FEATURES The HY62SF16200A is a high speed, super low power and 2Mbit full CMOS SRAM organized as 131,072 words by 16bits. The HY62SF16200A uses high performance full CMOS process technology and is designed for high speed and |
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Contextual Info: HY62SF16400A Series 256Kx16bit full CMOS SRAM DESCRIPTION FEATURES The HY62SF16400A is a high speed, super low power and 4Mbit full CMOS SRAM organized as 256K words by 16bits. The HY62SF16400A uses high performance full CMOS process technology and is designed for high speed and low power |
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Contextual Info: HY62SF16403A Series 256Kx16bit full CMOS SRAM DESCRIPTION FEATURES The HY62SF16403A is a high speed, super low power and 4Mbit full CMOS SRAM organized as 256K words by 16bits. The HY62SF16403A uses high performance full CMOS process technology and is designed for high speed and low power |
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Contextual Info: HY62SF810C Series 128Kx8bit full CMOS SRAM DESCRIPTION FEATURES The HY62SF8100C is a high speed, super low power and 1M bit full CMOS SRAM organized as 131,072 words by 8bit. The HY62SF8100C uses high performance full CMOS process technology and designed for high speed low power circuit |
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Contextual Info: HY62SF16401A Series 256Kx16bit full CMOS SRAM DESCRIPTION FEATURES The HY62SF16401A is a high speed, super low power and 4Mbit full CMOS SRAM organized as 256K words by 16bits. The HY62SF16401A uses high performance full CMOS process technology and is designed for high speed and low power |
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hy62sf16401a256kx16bit16bits48-ball+2 | |
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Contextual Info: HY62SF8400A Series 512Kx8bit full CMOS SRAM DESCRIPTION FEATURES The HY62SF8400A is a high speed, super low power and 4Mbit full CMOS SRAM organized as 512K words by 8bits. The HY62SF8400A uses high performance full CMOS process technology and is designed for high speed and low power |
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Contextual Info: HY62SF16806B Series 512Kx16bit full CMOS SRAM Document Title 512K x16 bit 1.8V Super Low Power Full CMOS slow SRAM Revision History Revision No History Draft Date Remark May.29.2001 Preliminary 00 Initial Release 01 DC Electrical Characteristics Oct.22.2002 |
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HYSF6804A
Abstract: HY62SF16804A HY62SF16804A-C HY62SF16804A-I
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Contextual Info: HY62SF16804A Series 512Kx16bit full CMOS SRAM Document Title 512K x16 bit 1.8V Super Low Power Full CMOS slow SRAM Revision History Revision No History Draft Date Remark 04 Initial Revision History Insert Revised - Reliability Spec Deleted Jul.02.2000 Preliminary |
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hy62sf16804a512kx16bithy62qf16803ahy62qf16804a+1 | |
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Contextual Info: HY62SF16806A Series 512Kx16bit full CMOS SRAM Document Title 512K x16 bit 1.8V Super Low Power Full CMOS slow SRAM Revision History Revision No History Draft Date Remark 00 Initial Draft Apr.10.2001 Preliminary Preliminary 01 Change Logo - Hyundai à Hynix |
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Contextual Info: HY62SF16803A Series 512Kx16bit full CMOS SRAM Document Title 512K x16 bit 1.8V Super Low Power Full CMOS slow SRAM Revision History Revision No History 04 Initial Revision History Insert Revised - Reliability Spec Deleted Jul.02.2000 Preliminary 05 Change AC Characteristics |
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hy62sf16803a512kx16bit5m-1994 | |
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Contextual Info: HY62SF16806A Series 512Kx16bit full CMOS SRAM Document Title 512K x16 bit 1.8V Super Low Power Full CMOS slow SRAM Revision History Revision No History Draft Date Remark 00 Initial Draft Apr.10.2001 Preliminary 01 Change Logo - Hyundai à Hynix Apr.28.2001 |
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Contextual Info: HY62SF16806A Series 512Kx16bit full CMOS SRAM Document Title 512K x 16 bit 1.8V Super Low Power Full CMOS slow SRAM Revision History Revision No 00 01 History Draft Date Initial Draft Apr.10.2001 Preliminary Apr.28.2001 Preliminary Change Logo - Hyundai à |
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hy62sf16806a512kx16bit16bitshysf6806a+1 | |
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Contextual Info: HY62SF16804A Series 512Kx16bit full CMOS SRAM Document Title 512K x16 bit 1.8V Super Low Power Full CMOS slow SRAM Revision History Revision No 04 History Initial Revision History Insert Revised - Reliability Spec Deleted Draft Date Jul.02.2000 05 Change AC Characteristics |
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hy62sf16804a512kx16bithy62qf16803ahy62qf16804a+2 | |
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Contextual Info: HY62SF16201A Series 128Kx16bit full CMOS SRAM Document Title 128K x16 bit 1.8V Super Low Power Full CMOS Slow SRAM Revision History Revision No History Draft Date Remark 05 Divide output load into two factors - tCLZ,tOLZ,tBLZ,tCHZ,tOHZ,tBHZ,tWHZ,tOW - Others |
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hy62sf16201a128kx16bit16bithy62sy62sf16201a+3 | |
HY62SF16201A
Abstract: HY62SF16201A-I
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hy62sf16201a128kx16bity62sf16201ahysf621ac+3 | |
HY62SF16201A
Abstract: HY62SF16201A-I
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