CISS Search Results

2n5549

Contextual Info: TYPE 2N5549 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR B U L L E T I N N O . D L -S 7 0 1 1 1 2 4 , J U N E 1 9 7 0 FOR LOW-LEVEL CHOPPERS, LOGIC SWITCHES, MULTIPLEXERS, AND RF AND VHF AMPLIFIERS • High lyfsl/Ciss Ratio High-Frequency Figure-of-Merit

2N5546

Contextual Info: T Y P E S 2N5545, 2N5546, 2N5547 D U A L N C H A N N E L SILICON J U N C T IO N F IE L D -E F F E C T TR A N S IS TO R S B U L L E T IN NO. DL-S 7311696, M AR CH 1 9 7 2 -R E V IS E D M AR CH 1973 M A T C H E D F IE L D -E F F E C T TR AN SISTO RS • High lyf$l/Ciss Ratio High-Frequency Figure-of-Merit

SIHS36N50D

Contextual Info: SiHS36N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness

SIHF10N40D-E3

Contextual Info: SiHF10N40D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness

mosfet to-220ab

Abstract: 91512 SiHP14N50D
Contextual Info: SiHP14N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness

NS-106

Abstract: 2SK3354 NS 106
Contextual Info: MOSFET SMD Type MOS Field Effect Transistor 2SK3354 TO-263 +0.1 1.27-0.1 RDS on 2 = 12 m MAX. (VGS = 4 V, ID = 42 A) 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 Low Ciss: Ciss = 6300 pF TYP. 5.60 MAX. (VGS = 10 V, ID = 42 A) Built-in gate protection diode +0.2 4.57-0.2

A1723

Abstract: smd transistor 26 KPA1716 40A19
Contextual Info: IC IC SMD Type MOS Field Effect Transistor KPA1716 Features Low on-state resistance RDS on 1 = 12.5 m TYP. (VGS = -10 V, ID = -4 A) RDS(on)2 = 17 m TYP. (VGS = -4.5 V, ID = -4 A) RDS(on)3 = 19 m TYP. (VGS = -4.01 V, ID = -4 A) Low Ciss : Ciss = 2100 pF TYP.

Contextual Info: [j^ [D tUJ TF ©ÄTTM,© LOW P O W E R FIELD EFFE C T T R A N S IS T O R S L@W [ M © D © [ 1  I l [ p y i F D [ l [ ^ s ' M ° © [ n l  [ M [ M I [ L [ F i T T É Type Number Case Style (T O -) Geometry BVgss Min (V) Ciss Max (pF) Crss Max (pF) Vgs (off)

UC754

Abstract: UC758
Contextual Info: ATCdL LOW P O W E R FIELD E FFEC T T R A N S IS T O R S IMliOMtL ¡PÖJM^©©!! G^tgKlÄMilL Type Number •BVDgo or Case BVgss Style Min (T O - Geometry (V) Ciss Max (pF) Crss Max (PF) Vgs (off) Min Max (V) lgss Max (nA) Yls Min Max (uMhos) Idss Min Max

Contextual Info: SHINDENGEN VX-2 Series Power MOSFET 2SK2177 N-Channel Enhancement type OUTLINE DIMENSIONS F1E50VX2 Case : E-pack (Unit : mm) 500V 1A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small.

IT1172

Contextual Info: BFL4036 Ordering number : ENA1830 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET BFL4036 General-Purpose Switching Device Applications Features • • • ON-resistance RDS on =0.4Ω (typ.) Input capacitance Ciss=1000pF (typ.) 10V drive Specifications

2SK2395

Contextual Info: Ordering number: EN4640 2SK2395 No. 4840 N-Channel Junction Silicon FET SA\YO i Low-Noise HF Amp Applications A pplications •AM tuner RF amp. • Low-noise amp. F e a tu re s • Large I y f8 I . • Small Ciss. • Very low noise figure. bsolute M axim um R atings at Ta = 25°C

Contextual Info: ATP613 Ordering number : ENA1903 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ATP613 General-Purpose Switching Device Applications Features • • • Reverse recovery time trr=60ns typ. Input Capacitance Ciss=350pF(typ.) Halogen free compliance

Contextual Info: BFL4007 Ordering number : ENA1689 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET BFL4007 General-Purpose Switching Device Applications Features • • Reverse recovery time trr=95ns typ Input capacitance Ciss=1200pF (typ) • • ON-resistance RDS(on)=0.52Ω (typ)

FL4037

Contextual Info: BFL4037 Ordering number : ENA1831 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET BFL4037 General-Purpose Switching Device Applications Features • • • ON-resistance RDS on =0.33Ω (typ.) Input capacitance Ciss=1200pF (typ.) 10V drive Specifications

2SK937

Contextual Info: Ordering number:EN 3006 _ 2SK937 No.3006 N-Channel Junction Silicon FET High-Frequency General-Purpose Amp Applications F e a tu re s • Adoption of FBET process •Large lyfsl ■Small ciss A bsolute M axim um R atings at Ta = 25°C Drain to Source Voltage

APT5015BLC

Contextual Info: APT5015BLC 500V 32A 0.150 W POWER MOS VITM Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout,

NSFY30509

Abstract: NSFY30613 NSFY30616 NSFY30724 NSFY30728 NSFY30824 NSFY30828 NSFY30940 NSFY30942 NSFY31040
Contextual Info: N EW ENGLAND SEMICONDUCTOR POWER MOSFETS N CHANNEL TO-257 ^ D S o n PACKAGE TO-257 Also available in Z Pack • • • DEVICE TYPE BVdss VOLTS Id @0.5 ID Qg AMPS OHMS nc Ciss Pf Pd WATTS NSFY31042 1000 3.0 4.2 55 950 100 NSFY31040 1000 3.3 4.0 55 950 100

P093A

Abstract: STE50DE100
Contextual Info: STE50DE100 1000 V - 50 A - 25 mΩ POWER MODULE PRELIMINARY DATA • ■ ■ ■ ■ ■ HIGH VOLTAGE / HIGH CURRENT CASCODE CONFIGURATION ULTRA LOW EQUIVALENT ON RESISTANCE VERY FAST-SWITCH UP TO 150 KHz SQUARED RBSOA UP TO 1000 V ULTRA LOW CISS DRIVEN BY RG = 56Ω

transistor marking code 12W SOT-23

Contextual Info: Supertex inc. LND150 N-Channel Depletion-Mode DMOS FET Features ► ► ► ► ► ► ► General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Excellent thermal stability Integral source-drain diode High input impedance and low CISS

Contextual Info: Supertex inc. VN4012 N-Channel Enhancement-Mode Vertical DMOS FET Features ►► ►► ►► ►► ►► ►► ►► General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds

Contextual Info: Supertex inc. VP0104 P-Channel Enhancement-Mode Vertical DMOS FETs Features ►► ►► ►► ►► ►► ►► ►► General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds

IRF830B

Contextual Info: IRF830B www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness

forth dimension displays

Abstract: SIHU3N50D-GE3
Contextual Info: SiHU3N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) 550 RDS(on) max. () at 25 °C VGS = 10 V 3.2 Qg (max.) (nC) 20