SIHF10N40D Search Results

SIHF10N40D Datasheets (1)

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Vishay Siliconix

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
SIHF10N40D-E3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 400V 10A TO-220 FPAK	Original	PDF		8

SIHF10N40D Price and Stock

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Vishay Intertechnologies


Vishay Intertechnologies SIHF10N40D-E3 Transistor: N-MOSFET; unipolar; 400V; 6A; Idm: 23A; 33W; TO220FP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	SIHF10N40D-E3				1	1 $1.34 10 $1.20 100 $0.95 1000 $0.89 10000 $0.89	Get Quote
Bristol Electronics	SIHF10N40D-E3		800		1	1 $1.87 10 $1.40 100 $1.16 1000 $0.70 10000 $0.70	Buy Now
Quest Components ()	SIHF10N40D-E3		640			1 $2.46 10 $2.46 100 $1.23 1000 $0.98 10000 $0.98	Buy Now
	SIHF10N40D-E3		640			1 $2.49 10 $2.49 100 $2.49 1000 $0.81 10000 $0.81	Buy Now

SIHF10N40D Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
SIHF10N40D-E3 Contextual Info: SiHF10N40D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness	Original	sihf10n40d o-220 2011/65/eu 2002/95/ec +212-mar-12 sihf10n40d-e3	PDF
Contextual Info: SiHF10N40D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness	Original	sihf10n40d 2011/65/eu o-220 2002/95/ec +112-mar-12	PDF
84-0244 Contextual Info: SiHF10N40D_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter	Original	sihf10n40d an609 8121m 0071m +77111m 5902m 1941m 9755m 2440m 23-may-12 84-0244	PDF
Contextual Info: SiHF10N40D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness	Original	sihf10n40d 2011/65/eu o-220 2002/95/ec +2js709a 02-oct-12	PDF
IRF740BPBF Abstract: mosfets for lcd tv SiHD3N50D IRF730BPBF SiHF8N50D SiHG22N50 Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . AND TEC I INNOVAT O L OGY D Series N HN HIGH-VOLTAGE POWER MOSFETs O 19 62-2012 MOSFETs - Increased Switching Speed High-Performance 400 V, 500 V, and 600 V MOSFETs Feature “Stripe” vs. “Cellular” Geometry Technology	Original	o-220 o-251 o-220fp o-247ac +6irf740bpbf mosfets for lcd tv sihd3n50d irf730bpbf sihf8n50d sihg22n50	PDF
si7121 Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®	Original	mediu33-4-9337-2727 vmn-sg2127-1210 si7121 si4914b +8si-4102 si4599 si4483a sir166 irfd120 si7949 si4459a sir836	PDF