CHN 455 Search Results

ST CHN 510

Abstract: 83C97 chn 809 chn 809 ST
Contextual Info: 83C97 T e chn o log y, In co rp o rate d 10BASE-T Ethernet Transceiver With On Chip Filters and Digital Interface and Serial Port PRELIMINARY October 1994 SEEQ AutoDUPLEX Designation S ym bol indentifies product as A u to D U P L E X device. Description

Contextual Info: V ishay I n t e r t e chn o l o g y, I nc . Capacitors - High Reliability and Life Expectancy AND TEC I INNOVAT O L OGY HDMKP N HN VISHAY ESTA POWER CAPACITORS O 19 62-2012 Capacitors for Power Electronics Key Benefits • • • • • • High RMS current rating: up to 150 A

chn 809

Abstract: chn 809 ST Transistor TT 2246 transistor chn 037 MO40 TT 2246 transistor capacitor JA8 KMA Series 232 pin diagram of BC 547 SABRE 408
Contextual Info: 83C95 T e chn o log y, Inco rp o rate d 10BASE-T Ethernet Transceiver With On Chip Filters And AUI PRELIMINARY October 1994 S E E Q A u to D U P L E X D esignation Symbol indentifies product as AutoDUPLEX device. D escription The 83C95 is a highly integrated analog interface 1C for

Transistor TT 2246

Abstract: transistor chn 911 TT 2246 transistor jm31a pulse electronics era transformer transistor chn 037 chn 809 S4744
Contextual Info: SEEQ T e chn o log y, Inco rp o rate d 83C96 10BASE-T Ethernet Transceiver With On Chip Filters and Digital Interface PRELIMINARY October 1994 SEEQ AutoDUPLEX Designation Sym bol indentifies product as A u to D U P L E X device. Description The 83C96 is a highly integrated analog interface 1C for

chn 723

Abstract: TSMC 180nm dual port sram chn 448 CHN 727 chn 501 chn 711 CHN 450 TSMC 180nm single port sram tsmc 180nm sram TSMC 180nm
Contextual Info: CS4100 TM ADPCM Speech Coders Virtual Components for the Converging World The CS4100 family of adaptive differential pulse code modulators ADPCMs is designed to provide high performance solutions for a broad range of applications requiring speech compression and decompression.

CHN 550

Abstract: CHN 545 chn 710 CHN 712 chn 538 CHN 431 CHN 709 CHN 741 chn 738 chn 648 equivalent
Contextual Info: R&S ZNC/ZND Vector Network Analyzers User Manual ;xíÇ2 User Manual Test & Measurement 1173.9557.02 ─ 26 This manual describes the following vector network analyzer types: ● R&S®ZNC3 (2 ports, 9 kHz to 3 GHz, N connectors), order no. 1311.6004K12

chn 807

Abstract: CHN 510
Contextual Info: group Data Sheet February 1999 Lucent Technologies Bell Labs Innovations LG1602 Decision Circuit Features Functional Description • Operation up to 3 Gbits/s The LG1602 is a gallium arsenide GaAs decision circuit. It features a sensitive broadband input ampli­

Contextual Info: 2SK2049 FUJI P O W E R M O S - F E T N-CHANNEL SILICON POWER MOS-FET F - III • Features S E R I E S ■ Outline Drawings • Hi jh current • Low on-resistance • Nc secondary breakdown • Low driving power • Hi 3h forward Transconductance ■ Applications

PAIRGAIN

Abstract: CHN 552 Motorola wireless router Type 0X69 BT8953EPF E1 PCM encoder RS8953B RS8953BEPF RS8953BEPJ RS8953SPB Water level indicator using 8051
Contextual Info: RS8953B/8953SPB HDSL Channel Unit The RS8953B is a High-Bit-Rate Digital Subscriber Line HDSL channel unit designed to perform data, clock, and format conversions necessary to construct a Pulse Code Multiplexed (PCM) channel from one, two, or three HDSL channels. The PCM channel

CHN 950

Abstract: chn 630
Contextual Info: 2SK1823-01R FUJI P O W E R M O S - F E T N-CHANNEL SILICON POWER MOS-FET _ _ _ - FAP-IHA SERIES • Features Outline Drawings • High current • -ow on-resistance • Mo secondary breakdown • .ow driving power • High forward Transconductance

2SK2081-01

Abstract: SC-65 T151 FA-MT a2396
Contextual Info: 2SK2081-01 FUJI POWER MOS-FET N-OHANNEL SILICON POWER MOS-FET F A P -IIA S E R IE S • : eatures Outline Drawings • h igh speed switching • Low on-resistance • Mo secondary breakdown • Low driving power • High voltage • Vcs = ±30V Guarantee • Avalanche-proof

A2211

Abstract: a2210 2SK1504-01L 2SK1504-01 power mosfet switching TV TCL Schematic
Contextual Info: 2 S K 1 5 4 - 0 1 L FUJI PO W ER M O S-F ET , S N- 'HANNEL SILICON POWER MOS-FET F -II S E R IE S I Features Outline Drawings High speed switching Low on-resistance Mo secondary breakdown Low driving power High voltage J S S —±30V Guarantee Avalanche-proof

Contextual Info: 21S K 1 6 5 9 -L,S<r*ä> FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET SERIES ^ • Features ■ Outline Drawings • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage ■ Applications • Switching regulators

chn 902

Abstract: 45513 funkamateur VEB M ik ro e le k tro n ik ddr veb L1K30 X1K25 Scans-048 verlag technik TGL DDR
Contextual Info: VEB G O L D P F E I L M A G N E T K O P F W E R K HARTMAN N S D O R F Beilage zu „Kennblätter der Magnetköpfe“ B e griffe 06o3IiaM C H H H Term s dependence A b h ä ngigkeit 3HBMCMMOCTb A bschirm kappe 3KpaHHpyiomnH Ko^naK m agnetic sh ie ld case Angaben beziehen sich a u f

642-102

Contextual Info: ísPtgi-'-é-fr-tí-sfc ROHM CORPORATION « s a *» * # 5 t * t / T i 0 8 * * « B > # E S *I3 -1 4 -3 1 TE L 03 34 4 5-5 32 1 F A X (03)3443-7453 2150, C om m erce Drive, San Jose, C A 95131, U.S.A. TE L:(408)432-0500 TW X :910-33B -2116 FAX:{408)434-6444

CHN 530

Abstract: chn 707 hiab chn 445 CHN 455
Contextual Info: :Q§ LOW SKEW PLL-BASED CMOS CLOCK DRIVER WITH 3-STATE : jdfr/ Integrated De vice Technology, Inc. FEATURES: IDT74FCT88915TT 55/70/100/133 mance PCs and workstations. One of the outputs is fed back to the PLL at the FEEDBACK input resulting in essentially

BTX94

Abstract: BTX94-600U BTx94 1200 ST BTW48 sot 23 3d SOT-25 0b rbi-e BT138 BTW37 T0220AB
Contextual Info: Thyristors and triaos abridged data of principal types book 1 part 5 TRIACS The type number suffix is the VD pM rating Ratings • t (RMS) Tmb * 85°C I trm (A) (A ) I t s m 1) l 2t t - 10ms {A ) dlT dt (A 2s) (A //is) Characteristics dVD V qt d t m8X normal co m m u tatin g m in.

BAV46

Abstract: bat59 Pin connection of bk 1085 BAT39 BAT52 BAV72 BAT10 BAW96 BAV71 BAT50R
Contextual Info: Microwave solid state mixer diodes M axim um Operating Frequency GHz Type No. book 1 part 8 Typical Noise Figure (dB) Typical Impedance 8.5 750 O perating Temperature Z if Drawing i'e fe re n c e O u tlin e <oc> (Í2) GERMANIUM POINT CONTACT 40 AAY34 - 5 5 t o +100

DIODO LN4148

Abstract: A2 diodo zener diodo zener 5.1 B2 diodo 1n4148 diodo s4 diodo s4 81 6.8 B2 diodo a52 zener diode diodo 72 DIODO LED
Contextual Info: Microminiature devices diodes book 1 part 3 Outline SO T-23 Type No. | | » Q £ BAV70 X4 BAW66 X5 BAV99 X6 Description Common cathode double diodo Common anode double diodo Two diodes i n series intended for high speed switching. Vrrm Ifrm Max. Reverse Recovery Time, t rr

OA90 diode

Abstract: OA90 germanium diode oa47 diode OA95 diode diode aa119 Germanium Diode OA91 DIODE OA95 AA119 DIODE OA90 OA91
Contextual Info: Diodes Milliard diodes are supplied bandoliered. Exceptions are noted below. Bandolier packing DO-7 D O -35 SOD-17 7000 9000 9000 F o r fu rth e r details conta ct M illia rd House. germanium point contact diodes book 1 part 3 Outline DO-7 Drawing reference D1

ne 565 pll

Abstract: fct88915 idt74fct88915
Contextual Info: :Q§ LOW SKEW PLL-BASED CMOS CLOCK DRIVER WITH 3-STATE : jdfr/ In te g ra te d De v ic e T e c h n o lo g y , Inc. FEATURES: IDT74FCT88915TT 55/70/100/133 mance PCs and workstations. One of the outputs is fed back to the PLL at the FEEDBACK input resulting in essentially

BZX87

Abstract: zener bzx87 c5v8 zener
Contextual Info: Silicon voltage regulator diodes low power cont. book 1 part 3 Outline SOD—51 Drawing reference V 1 ,5 W (Tamt)*= 25°C) Ì 5% voltage toi «rance Type No. BZX87 Nom. Zerter Voltage (V) Min. Vottage (V) —C5V1 -CSV6 5.1 5.6 4.8 5.2 5.8 6.4 Typ. Temp.

transistor NPN 3D SOT 153

Abstract: BRY39 BCY87 TAG thyristor BFR49 si controlled tetrode switch BRY3 BCY88 BCY89 BR101
Contextual Info: Transistors m icrowave transistors Type No. M L 1 5/2 B M L 1 5/4 B Drawing reference VCBO max. V N-P-N transistor fo r am plifiers up to S—band frequencies AN 20 0.025 N-P-N L —band p ow er transistors intended fo r com m on e m itter operation in class AG o r B

6TZ61

Abstract: 6TZ71 IP40G DDR-102 TZ62 LTSP VEB M ik ro e le k tro n ik Scans-048 TZ716 der ddr
Contextual Info: Elektronische Zeitrelais der Reihe 6 TZ 50. 6 TZ 72 •T Z 71 K» \ Q l« '« 4 • a— » i- 1Still , K « * 1 / % - « * I 1- B 10 C' 1 - Elektronische Zeitrelais « H au p tken n w erte S ch u tzg ra d : IP 40 G e h ä u s e K riech- u n d Luftstrecken