CHARACTERISTICS11 Search Results

UHF UHF Transistors

Abstract: BF909R BF98 BF991
Contextual Info: Concise Catalogue 1996 Philips Semiconductors SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS Tuner transistors & diodes NPN TUNER TRANSISTORS type ratings_ number V CEO 'c P.O. V (mA) 50 50 50 50 25 35 25 25 characteristics11_

philips vhf uhf tuner

Abstract: UHF UHF Transistors BF909R philips rf mosfets SOT343R BF908R BF98 BF991
Contextual Info: Philips Semiconductors Concise Catalogue 1996 DISCRETE SEMICONDUCTORS Tuner transistors & diodes RF & MICROWAVE SEMICONDUCTORS & MODULES NPN TUNER TRANSISTORS type number characteristics11_ ratings V CEO 'c Ptot h V (mA) (mW) (MHz) F (dB) 50

DD 127 D TRANSISTOR

Abstract: 7318s AN 7145 M circuit power amplifier ADT7316 7317 2N3906 ADT7317 ADT7318 ADT7318ARQ semiconductor ta 7317
Contextual Info: PRELIMINARY TECHNICAL DATA ±0.5°C Accurate Digital Temperature Sensor and a Quad Voltage Output 12/10/8-Bit DAC Preliminary Technical Data ADT7316/7317/7318 FEATURES ADT7316 - Four 12-Bit DACs ADT7317 - Four 10-Bit DACs ADT7318 - Four 8-Bit DACs Buffered Voltage Output

BD920

Abstract: GLONASS GPS receiver module Trimble sbas kalman filter C NMEA GPS usb
Contextual Info: TRIMBLE BD920 GNSS RECEIVER MODULE DATASHEET KEY FEATURES 220 Channels for multi-constellation GNSS support Fully EMI shielded module Compact design for mobile applications Flexible RS232, USB and ethernet interfacing Centimeter level position accuracy Proven Trimble Maxwell 6 technology

Contextual Info: SIEMENS 2M X 32-Bit Dynamic RAM Module HYM 322160S/GS-60/-70 Advanced Information 2 097 152 words by 32-Bit organization alternative 4 194 304 words by 16-Bit CAS-before-RAS refresh RAS-only-refresh Hidden-refresh Fast access and cycle time 60 ns access time

322120S-70

Abstract: HYB514400
Contextual Info: SIEMENS 2 M X 32-Bit Dynamic RAM Module HYM 322120S-60/-70/-80 Advanced Information • 2 097 152 words by 32-Bit organization alternative 4 194 304 words by 16-Bit • Fast access and cycle time 60 ns access time 110 ns cycle time (-60 version) 70 ns access time

Contextual Info: ISSI 32,768 X 8 HIGH-SPEED CMOS EPROM FEATURES DESCRIPTION • Fast read access time: 45 ns • Pin compatible with the IS 27C 256 • Low power consumption The I S S IIS27HC256 is a ultra-high-speed 256K-bit Ultravio­ let Erasable CMOS Programmable Read-Only Memory. It

74S107

Contextual Info: BiCMOS STATIC RAM 64K 8K x 8-BIT CACHE-TAG RAM IDT71B74 In te g ra te d D evice T ec hnology, In c . FEATURES: DESCRIPTION: • H igh-speed ad dress to M A TC H com parison tim e — C om m ercia l: 8/1 0/12 /15/20ns (m ax.) • H igh-speed ad dress acce ss tim e

Q67100-Q2007

Abstract: Q67100-Q985
Contextual Info: SIEM EN S 8M x 36-Bit Dynamic RAM Module HYM 368020S/GS-60/-70 Prelim inary Inform ation • 24 decoupling capacitors mounted on substrate 8 388 608 words by 36-bit organization alternative 16 777 216 words by 18-bit All inputs, outputs and clocks fully

Contextual Info: flX IU N XC7336 36-Macrocell CMOS EPLD X Preliminary Product Specifications Features General Description • The XC7336 is a member of the Xilinx Dual-Block EPLD family. It consists of four Fast Function Blocks intercon­ nected by a central Universal Interconnect Matrix UIM .

750H

Abstract: ST-100S
Contextual Info: TL RM,RMM,SM,OM,YM 1052(T20) TOSHIBA LED Lamp TLRM1052(T20),TLRMM1052(T20),TLSM1052(T20), TLOM1052(T20),TLYM1052(T20) Unit: mm Panel Circuit Indicator • 5.2 (L) x 5.2 (W) × 4.0 (H) mm • φ3.6×4.4 mm transparent lens top type • InGaAℓP LEDs • High luminous intensity and low power consumption.

Contextual Info: 3.3V CMOS 16-BIT INVERTING BUFFER/LINE DRIVER WITH 3-STATE OUTPUTS AND BUS-HOLD DESCRIPTION: FEATURES: - 0.5 MICRON CMOS Technology Typical tsK o (Output Skew) < 250ps ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0)

ED 05 Diode

Contextual Info: In teg rated D evice T echnology, inc. IDT74LVCH1 6276A 3.3V CMOS 12-BIT ADVANCE INFORMATION S YNCHRO NO US BUS EXCHANGER WITH BUS HOLD AND 5 V O L T T O L E R N A T I/O FEATURES: DESCRIPTION: • C o m m o n feat ur es: The LVCH16276A synchronous tri-port bus exchangers are

2115H-4

Abstract: 2125H-2
Contextual Info: ¡rite T 2115H, 2125H FAMILY HIGH SPEED 1K X 1 BIT STATIC RAM 2115H-2, 2125H-2 2115H-3, 212SH-3 2115H-4, 2125H-4 Max. TM ra 26 30 35 Max. IccOnA) 125 125 125 • HMOS U Technology ■ Pin Compatible to 93415A (2115H)and 93425A (2125H) ■ 16mA Output Sink Current

2164 dynamic ram

Abstract: 2118 intel 2164 RAM Intel 2164 2164 intel 2164 tea 2164 g hidden refresh Intel 2118
Contextual Info: intei' 2164-25 65,536 x 1 BIT DYNAMIC RAM 2164-25 Maximum Access Time ns 250 Read, Write Cycle (ns) 465 Read-Modify-Write Cycle (ns) 530 • Industry Standard 16-pin DIP 128 Refresh Cycles/2 ms RAS-only Refresh ■ HMOS Technology Non-Latched Output is Three-State

Contextual Info: SME5222AUPA-400 microsystems Ju ly 1999 _ UltraSPARC -!! CPU Module DATASHEET 400 MHz CPU, 2.0 MB E-Cache M o d u l e D e s c r ip t io n The U ltraSPARC™ -II, 400 M H z CPU, 2.0 M byte E-cache module, SM E5222AUPA-400 , delivers high perfor­

Contextual Info: f""* 1 3.3V D U A L D I F F E R E N T I A L S Y N ER G Y P E C L-to -n t L/ \ r j o Ku f' ^ m I ^ ; PQE, , 71i translator S E M IC O N D U C T O R " ' ' “ DESCRIPTION FEATURES • 2.0ns typical propagation delay ■ <500ps typical output-to-output skew ■ Differential PECL inputs

2118 intel

Abstract: Intel 2118 2118 dynamic ram intel 2118 FAMILY tcp 8111 2118 ram S6447 2118-15 S6331 2118-10
Contextual Info: intei 2118 FAMILY 16,384 x 1 BIT DYNAMIC RAM 2118-10 2118-12 Maximum Access Time ns 100 120 150 Read, Write Cycle (ns) 235 270 320 Read-Modify-Write Cycle (ns) 285 320 410 Single +5V Supply, ±10% Tolerance CAS Controlled Output is Three-State, TTL Compatible

P80A49H

Abstract: 8035HL F1L 250 V fuse BPK-70 interfacing 8275 crt controller with 8086 i8282 hall marking code A04 Transistor AF 138 DK55 82720 intel
Contextual Info: COMPONENT DATA CATALOG JANUARY 1982 Intel C orporation makes no w arranty fo r the use of its products and assumes no re sponsib ility fo r any e rrors w hich may appear in th is docum ent nor does it make a com m itm ent to update the info rm atio n contained herein.

SENSYM sx150

Abstract: SENSYM sx01 SX300N SENSYM SX01DN SSAN-16 SENSYM SENSYM SX05 SX15DD4 sensym vacuum SX1000
Contextual Info: SXOl, 05, 15/ 30/ 100/ 150 0 to 1 psî and 0 to 150 psi PRESSURE SENSORS FEATURES GENERAL DESCRIPTION • Low Cost • High Impedance Bridge • Absolute and Differential Gage The SX Series of pressure sensors provide the lowest cost components for measuring pressures up to 150 psi.

CEM9435

Contextual Info: CEM9435 March 1998 P-Channel Enhancement Mode MOSFET FEATURES • - 3 0 V , - 5 . 1 A , R ds o n =55 itiQ RDS(ON)=105mQ @ V g s = -10 V . @ V gs = -4 .5 V . • Super high dense cell design for extremely low Rds(on). • High power and current handing capability.

SK 50 DB 060D

Abstract: B794 Semitrans Semikron sk 75 DB060D DDQ3617 H21E
Contextual Info: SIE D •'sT h ■ fil3bb?l D003ölb SÔ7 « S E K Ö Sr ö h I hT SEMIKRDN - Maximum Ratings Symbol Conditions VcEVsus lc = 1 A, V be = - 2 V Values Units V V 600 V I 600 600 SEMITRANS 3 NPN Power Darlington Modules 100 A, 600 V II o m I CM > II UJ VcBO

m27c56

Abstract: M27C516
Contextual Info: [ Z J SGS-THOMSON M27C516 CMOS 512K 32K x 16 UV EPROM and OTP ROM • FAST ACCESS TIME: 120ns ■ COMPATIBLE WITH HIGH SPEED MICRO­ PROCESSORS, ZERO WAIT STATE ■ LOW POWER “CMOS” CONSUMPTION: - Active Current 30mA - Standby Current 200|xA ■ PROGRAMMING VOLTAGE: 12.75V

750H

Abstract: ST-100S AK 1052 TLOM1052T20
Contextual Info: TL RM,RMM,SM,OM,YM 1052(T20) TOSHIBA LED Lamp TLRM1052(T20),TLRMM1052(T20),TLSM1052(T20), TLOM1052(T20),TLYM1052(T20) Unit: mm Panel Circuit Indicator • 5.2 (L) x 5.2 (W) × 4.0 (H) mm • φ3.6×4.4 mm transparent lens top type • InGaAℓP LEDs • High luminous intensity and low power consumption.