CGY20 Search Results

draw pin configuration of ic 7400

Abstract: AN96084 BC807 BC858 CGY2030M DTC114YE DECT power philips dect 7.1 power amplifier circuit diagram 4.1 amplifier circuit diagram
Contextual Info: APPLICATION NOTE Application of the CGY2030M power amplifier AN96084 Philips Semiconductors Philips Semiconductors CGY2030M DECT power amplifier Application Note Abstract The CGY2030M is a monolithic GaAs power amplifier for transmission DECT applications.

Contextual Info: Philips Semiconductors Objective specification DECT 0.6 W power amplifier CGY2030M FEATURES GENERAL DESCRIPTION • 3.3 V supply voltage operation The CGY2030M is a GaAs monolithic microwave 600 mW power amplifier designed for a 3.3 V supply voltage. When

CGY2030M

Abstract: SSOP16 SSOP20 TL 188 TRANSISTOR PNP
Contextual Info: Philips Semiconductors Preliminary specification DECT 500 mW power amplifier CGY2030M FEATURES GENERAL DESCRIPTION • Power Amplifier PA overall efficiency 40% The CGY2030M is a GaAs Monolithic Microwave Integrated Circuit (MMIC) power amplifier specifically

CGY2032TS

Abstract: SSOP16 transistor DD 127 D
Contextual Info: P hilips S em ico n d uctors P relim inary sp ecification DECT 500 mW power amplifier CGY2032TS FEA TUR ES A P P LIC A TIO N S • P ow er A m p lifier PA overall e fficiency 50% • 1.88 to 1.9 G H z tra n sce ive rs fo r D EC T applications • 28 dBm saturated output pow er at 3.2 V

LQFP-48 footprint

Abstract: schematics for a PA amplifier class c 7x7x1.4 n004 schematics for a PA amplifier 27 Mhz power amplifier power amplifier 33PF C5000 CGY2010G
Contextual Info: Philips Semiconductors Objective specification GSM 4 W power amplifiers CGY2010G; CGY2011G FEATURES GENERAL DESCRIPTION • Power Amplifier PA overall efficiency 45% • Integrated power sensor driver The CGY2010G and CGY2011G are GSM class 4 GaAs Monolithic Microwave Integrated Circuits (MMICs) power

gsm signal amplifier circuit diagram

Abstract: MGD629
Contextual Info: Philips Semiconductors Objective specification GSM 4 W power amplifier CGY2013G FEATURES GENERAL DESCRIPTION • Power Am plifier PA overall efficiency 45% The CGY2013G is a GSM class 4 GaAs Monolithic Microwave Integrated Circuit (MMIC) power amplifier

Contextual Info: Philips Semiconductors Preliminary specification DCS/PCS 2 W power amplifier CGY2021G FEATURES G E N E R A L DESCRIPTION • Powsr Amplifier PA overall efficiency 50% (DCS) The CGY2021G is a DCS/PCS class 1 GaAs Monolithic Microwave Integrated Circuit (MMIC) power amplifier

CGY2032TS

Contextual Info: INTEGRATED CIRCUITS DATA SHEET CGY2032TS DECT 500 mW power amplifier Objective specification Supersedes data of 1997 Sep 04 File under Integrated Circuits, IC17 1998 Jun 10 Philips Semiconductors Objective specification DECT 500 mW power amplifier CGY2032TS

philips dect

Abstract: CGY2032TS
Contextual Info: INTEGRATED CIRCUITS DATA SHEET CGY2032TS DECT 500 mW power amplifier Preliminary specification Supersedes data of 1998 Jun 10 File under Integrated Circuits, IC17 1998 Nov 23 Philips Semiconductors Preliminary specification DECT 500 mW power amplifier CGY2032TS

smd diode HB

Abstract: BA891 CGY2014ATW HTSSOP20 philips application
Contextual Info: INTEGRATED CIRCUITS DATA SHEET CGY2014ATW GSM/DCS/PCS power amplifier Preliminary specification File under Integrated Circuits, IC17 2000 Nov 28 Philips Semiconductors Preliminary specification GSM/DCS/PCS power amplifier CGY2014ATW FEATURES GENERAL DESCRIPTION

ICS 1210 Pressure Sensor

Abstract: 1210 pressure sensor ics gsm transceiver schematics for a PA amplifier design of multi section directional coupler gsm signal amplifier pressure sensor sp 20 BSR14 CGY2010G CGY2011G
Contextual Info: INTEGRATED CIRCUITS DATA SHEET CGY2010G; CGY2011G GSM 4 W power amplifiers Objective specification Supersedes data of 1995 Oct 25 File under Integrated Circuits, IC17 1996 Jul 08 Philips Semiconductors Objective specification GSM 4 W power amplifiers CGY2010G; CGY2011G

AN97034

Abstract: CGY2021G
Contextual Info: APPLICATION NOTE Application of the CGY2021G power amplifier AN97034 Philips Semiconductors Philips Semiconductors CGY2021G DCS/PCS power amplifier Application Note Abstract The CGY2021G is a monolithic GaAs power amplifier for transmission DCS/PCS applications.

CGY2021G

Abstract: LQFP48 PCA5075 SMD0603
Contextual Info: Philips Semiconductors Objective specification DCS/PCS 2 W power amplifier CGY2021G FEATURES G EN ER A L DESCRIPTION • Pow er Amplifier PA overall efficiency 48% (DCS) The C G Y 2 0 2 1 G is a D C S /P C S cla ss 1 G a A s Monolithic M icrowave Integrated Circuit (MMIC) power amplifier

TQFP 44 PACKAGE footprint

Abstract: BC807 BC849C CGY2032BTS SSOP16
Contextual Info: INTEGRATED CIRCUITS DATA SHEET CGY2032BTS DECT 500 mW power amplifier Preliminary specification File under Integrated Circuits, IC17 2000 Mar 14 Philips Semiconductors Preliminary specification DECT 500 mW power amplifier CGY2032BTS FEATURES APPLICATIONS • Power Amplifier PA overall efficiency 55%

schematic diagram power amplifier free

Abstract: class g power amplifier schematic philips dect
Contextual Info: Philips Semiconductors Product specification DECT 500 mW power amplifier CGY2030M FEATURES GENERAL DESCRIPTION • Power Amplifier PA overall efficiency 40% The CGY2030M is a GaAs Monolithic Microwave Integrated Circuit (MMIC) power amplifier specifically

irf 652

Contextual Info: Philips Semiconductors Preliminary specification DCS/PCS 2 W power amplifier CGY2021G FEATURES GENERAL DESCRIPTION • Power Amplifier PA overall efficiency 50% (DCS) The CGY2021G is a DCS/PCS class 1 GaAs Monolithic Microwave Integrated Circuit (MMIC) power amplifier

Contextual Info: Philips Semiconductors Objective specification GSM 4 W power amplifier CGY2010G FEATURES GENERAL DESCRIPTION • Power amplifier PA final stage efficiency 65% The CGY2010G is a GSM class 4 GaAs power amplifier specifically designed to operate at 4.8 V supply. The chip

Power Amplifier GSM

Abstract: smd transistor A1 HB CGY2015 SOT629-1 h2lb BA891 philips rf manual power amplifier circuit diagram with pcb layout power amplifier handbook schematics for a PA amplifier
Contextual Info: INTEGRATED CIRCUITS DATA SHEET CGY2015 GSM/DCS/PCS power amplifier Preliminary specification 2002 Mar 12 Philips Semiconductors Preliminary specification GSM/DCS/PCS power amplifier CGY2015 FEATURES GENERAL DESCRIPTION • 3.5 V nominal supply voltage The CGY2015 is a dual GaAs Monolithic Microwave

design of multi section directional coupler

Abstract: pressure sensor sp 20 schematics for a PA amplifier CGY2020G LQFP48 PCA5075 PHP109 BAS70 BSR14 pressure sensor sp 13
Contextual Info: INTEGRATED CIRCUITS DATA SHEET CGY2020G DCS 2 W power amplifier Objective specification File under Integrated Circuits, IC17 1996 Jul 17 Philips Semiconductors Objective specification DCS 2 W power amplifier CGY2020G FEATURES GENERAL DESCRIPTION • Power Amplifier PA overall efficiency 42%

fca173

Abstract: h2lb FCA175 BA891 CGY2014TT philips rf manual HTSSOP20
Contextual Info: INTEGRATED CIRCUITS DATA SHEET CGY2014TT GSM/DCS/PCS power amplifier Product specification Supersedes data of 2000 Apr 11 File under Integrated Circuits, IC17 2000 Oct 16 Philips Semiconductors Product specification GSM/DCS/PCS power amplifier CGY2014TT FEATURES

CGY2030M

Abstract: SSOP16 SSOP20 footprint ssop16
Contextual Info: Philips Semiconductors Product specification DECT 500 mW power amplifier CGY2030M FEATURES GENERAL DESCRIPTION • Power Amplifier PA overall efficiency 40% The CGY2030M is a GaAs Monolithic Microwave Integrated Circuit (MMIC) power amplifier specifically

HF power amplifier

Abstract: ze 003 ic CGY2010G LQFP48 LQFP64 LQFP80 PCA5075 SA1620
Contextual Info: Philips Semiconductors Objective specification GSM 4 W power amplifier CGY2010G FEATURES GENERAL DESCRIPTION • Power amplifier PA final stage efficiency 65% The CGY2010G is a GSM class 4 GaAs power amplifier specifically designed to operate at 4.8 V supply. The chip

tc2n

Abstract: SSOP16 SSOP20 UBA1710M SOT266-1 nc3p
Contextual Info: Philips Semiconductors Objective specification Modulator for GaAs power amplifiers UBA1710 FEATURES GENERAL DESCRIPTION • Power MOS modulators for control of GaAs power amplifier drain voltage The UBA1710 integrates the functions required to operate the GaAs Power Amplifiers PAs from the CGY20xx

CGY2030M

Abstract: DCS1800 SSOP16 SSOP20
Contextual Info: Philips Semiconductors Objective specification DECT 0.6 W power amplifier CGY2030M FEATURES GENERAL DESCRIPTION • 3.3 V supply voltage operation The CGY2030M is a GaAs monolithic microwave 600 mW power amplifier designed for a 3.3 V supply voltage. When