CFT50 Search Results

TC5118160CJ

Abstract: tc5118160 TC5118160c
Contextual Info: TOSHIBA TC5118160CJ/CFT-50,-60 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1,048,576-WORD x 16-BIT FAST PAGE DYNAMIC RAM DESCRIPTION The TC5118160CJ/CFT is a fast page dynamic RAM organized as 1,048,576 words by 16 bits. The TC5118160CJ/CFT utilizes TOSHIBA’SCMOS silicon gate process technology as well as advanced

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T82F

Abstract: C434 C394 C395 C477 C448 T9GH 28 TO200AC package
Contextual Info: 7294621 POWEREX INC "tÏ Inverter Grade SCRs DE I 72^4^21 0 | 7% ^ $ - -/<? iT RMS Tc=6?° C 50% Duty Cycle, H alf Sine 1KHz (Amps) Vdr m / V r r m (mA) /* t fo r Fusing @ 8.3 ms (A3sec x 10A) Range (Volts) (Am ps) 14.9 800-1200 Id r m / I r r m Rated

TC51V16160

Contextual Info: TOSHIBA TC51V 1 6160CJ/CFT-50,-60 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1,048,576-WORD x 16-BIT FAST PAGE DYNAMIC RAM DESCRIPTION The TC51V16160CJ/CFT is a fast page dynamic RAM organized as 1,048,576 words by 16 bits. The TC51V16160CJ/CFT utilizes TOSHIBA’S CMOS silicon gate process technology as well as advanced

SK 3002

Contextual Info: TOSHIBA TC5116165CJ/CFT-50,-60 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1,048,576-WORD x 16-BIT EDO HYPER PAGE DYNAMIC RAM DESCRIPTION The TC5116165CJ/CFT is an EDO (hyper page) dynamic RAM organized as 1,048,576 words by 16 bits. The TC5116165CJ/CFT utilizes TOSHIBA’S CMOS silicon gate process technology as well as

TC5116160

Abstract: AI05a CFT50
Contextual Info: TOSHIBA TC5116160CJ/CFT-50,-60 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1,048,576-WORD x 16-BIT FAST PAGE DYNAMIC RAM DESCRIPTION The TC5116160CJ/CFT is a fast page dynamic RAM organized as 1,048,576 words by 16 bits. The TC5116160CJ/CFT utilizes TOSHIBA’S CMOS silicon gate process technology as well as advanced

Contextual Info: TOSHIBA TC51V18165CJ/CFT-50,-60 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1,048,576-WORD x 16-BIT EDO HYPER PAGE DYNAMIC RAM DESCRIPTION The TC51V18165CJ/CFT is an EDO (hyper page) dynamic RAM organized as 1,048,576 words by 16 bits. The TC51V18165CJ/CFT utilizes TOSHIBA’S CMOS silicon gate process technology as well as

Variable Area Rotameter

Abstract: fmx siemens MASONEILAN VALVE ultrasonic flow meter rtt 10 foxboro foxboro FLOW METER turbine masoneilan MASONEILAN SVI ii Vortex flowmeter panametrics xmt 868
Contextual Info: IndustrialIT System 800xA Device Management HART Data Sheet Integrated HART Devices Revision: September 2010 Device Revision Manufacturer ID Device ID 1/5 22 135 4-Electrode Cond. 2wire, IS, Field 1 26 36 TB82PH pH 1 18 80 TB82PH-Combined pH/ORP 2-wire 1 26

tc511000aj

Abstract: ATR80 1048576x4 TC511664 tc511665 TC511664BJl TC511000AJ/AZ-70
Contextual Info: MOS Memory CMOS Dynamic RAM Capacity Max. Access Time ns Min. Cyde Power *AA Time (ns) Supply (V) *CAC Type No. ‘ RAC Max. Power Dtesipa!ion(mW) Active S ta n d by TC511000AJ/AZ-70 70 20 35 130 440 TC511000AJ/AZ-80 80 20 40 150 358 TC511000AJ/AZ-10 100

TA8172AF

Abstract: TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P
Contextual Info: Index of Type Number Type Number 015Z10 015Z11 015Z12 015Z2.0 015Z2.0-12 015Z2.2 015Z2.4 015Z2.7 015Z3.0 015Z3.3 015Z3.6 015Z3.9 015Z4.3 015Z4.7 015Z5.1 015Z5.6 015Z6.2 015Z6.8 015Z7.5 015Z8.2 015Z9.1 02CZ10 02CZ11 0 2 C Z 12 0 2 C Z 13 0 2 C Z 15 0 2 C Z 16

panametrics xmt 868

Abstract: honeywell stt25h prosonic RTT15 promag 50 STT25H panametrics promag 10 D699 STT17H
Contextual Info: IndustrialIT HART Device Type Managers for Freelance 800F and AC870P / Melody Data Sheet Revision : September 2010 The following Device Type Managers are interoperable with the beneath listed Freelance 800F and AC870P / Melody versions. Please see the M column for DTMs interoperable with AC870P / Melody and the F column for those interoperable with

tc514280

Abstract: TC514260BJLL TC514170 TC514260BJL TC514440 TC514260BJ
Contextual Info: X6 Capacity Type No. Max. Access Time n$ Min. Cyd Power Organization Tim$(ns) Supply (V) TC514400ASJUAZL/AFTUATRL-60 60 20 30 110 TC514400ASJUAZL7AFTUATRL-70 70 20 35 130 TC514400ASJL/AZL/AFTL/ATRL-80 80 20 40 150 80 20 40 150 80 20 40 50 13 25 TC51V4400ASJ/AFT-80

TC5118165CJ

Abstract: TC5118165 CFT50
Contextual Info: TOSHIBA TC5118165CJ/CFT-50,-60 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1,048,576-WORD x 16-BIT EDO HYPER PAGE DYNAMIC RAM DESCRIPTION The TC5118165CJ/CFT is an EDO (hyper page) dynamic RAM organized as 1,048,576 words by 16 bits. The TC5118165CJ/CFT utilizes TOSHIBA’S CMOS silicon gate process technology as well as