CFOR10SEC Search Results

Contextual Info: SLOTTED OPTICAL SWITCH OPTOELECTRONICS OPB861N51/OPB861N55 SEE NOTE 3 OPTICAL .126 3 .1 8 H CENTERLINE -.4 8 5 (12.32 r .11Q (2.79) The OPB861N series of switches is designed to allow the user maximum flexibility in applications. Each switch consists of an infrared emitting diode facing an NPN

Contextual Info: E Q IPIOELECinOllES SLOTTED OPTICAL SWITCH QVB SERIES The QVB series of switches is designed to allow th e user SEE NOTE 3 m axim um flexibility in applications. Each switch consists of an infrared emitting diode facing an NPN photo­ transistor across a .125" 3.18 m m gap. A unique

Contextual Info: EHI REFLECTIVE OBJECT SENSOR OPTOELECTRONICS QRC1133 DESCRIPTIO N PACKAGE DIMENSIONS The QRC1133 consists of an infrared emitting diode and an NPN silicon phototransistor mounted side by side on a converging optical axis in a black plastic housing. The phototransistor reponds to radiation from the emitting

Contextual Info: SLOTTED OPTICAL SWITCH OPTOELECTRONICS OPB862T51/OPB862T55 DESCRIPTION OPTICAL ' CENTERLINE The OPB862T series of switches is designed to allow the user maximum flexibility in applications. Each switch consists of an infrared emitting diode facing an NPN phototransistor across a .125" 3.18 mm gap. A unique

Contextual Info: [sul PLASTIC SILICON PHOTOTRANSISTOR OPTOELECTRONICS L14Q1 PACKAGE DIMENSIONS The L14Q1 is a silicon phototransister encapsulated is a clear, wide angle, sidelooker package. — D— * 1' Red Ef 4 Color • — T - H 1 i f 11 b J 3 . k SECTION X-X LEAD PROFILE

Contextual Info: [• T i SLOTTED OPTICAL SWITCH OPTOELECTRONICS Q VE11233 PACKAGE DIMENSIONS T h e Q V E 11233 is designed to allow the user m axim um •- 500 1 2 701 PIN 1 ^ ^ ^ - 1 > c 1 175 (4.45J 1 L .250 (6 35 DESCRIPTION flexibility in applications. Each switch consists of an

ST1736

Abstract: optocouplers H11B1
Contextual Info: PHOTODARLINGTON OPTOCOUPLERS OPTOELECTRONICS H11B1 H11B2 H11B3 PACKAGE DIMENSIONS DESCRIPTION The H11B series consists of a gallium arsenide infrared emitting diode, coupled with a silicon photodarlington transistor in a dual in-line package. ft ft ft FEATURES

st12

Abstract: CQX14 CQX16 ST1332
Contextual Info: GaAs INFRARED EMITTING DIODE OPTOELECTRONICS CQX14, CQX16 PACKAGE DIMENSIONS DESCRIPTION The CQX14/16 are 940nm LEDs in narrow angle, TO-46 packages. SEATING FEATURES ST1332 Good optical to mechanical alignment SYMBOL INCHES MIN. A MAX. MILLIMETERS MIN. .255

Contextual Info: [•13 GaAs INFRARED EMITTING DIODE OPTOELECTRONICS 1N6266 PACKAGE D I M E N S I O N S ^ D E S C R IP T IO N The 1N6266 is a 940nm LED in a narrow angle, TO-46 package. SEATIN G PLANE FEA TU R ES _ ST13 32 SYMBOL • Good optical to mechanical alignment

Contextual Info: SLOTTED OPTICAL SWITCH OPTOELECTRONICS OPB867T51/OPB867T55 DESCRIPTION > < f •-.3 1 3 (7 .9 4 ) - .125 {3 1 7 ) - OPTICAL - v c e n t e r l in e X -.4 8 5 (12.32) j-.110(2.79) — \ _ t —'ET - r I .425 (10.79) I— , I .345 (8.76) * ». .100 (2.54)

Contextual Info: [ s Q OPTOLOGICT OPTOELECTRONICS QSA156/157/158/159 PACKAGE DIMENSIONS .189 4.80 030 (0.76) J 7 MAX I .500 (12.78) Mir> ' 1IN .021 (0.53) ' .016(0.41) DIA 3 PLCS VCC OUTPUT GROUND DESCRIPTION The QSA15X family are OPTOLOGIC ICs which feature a Schmitt trigger at output which provides hysteresis for

154010

Contextual Info: MODEL BML SERIES Surface Mount Multi-Layer Chip Inductors Size: 0603 to 1206 O U TS TA N D IN G FEATURES Tight dimensional tolerances and a small package make this chip ideal for high density installation Monolithic structure for high reliability Magnetic shielded construction minimizes coupling to other components_

transistor TIP 320

Abstract: OPB862T OPB862T51 OPB862T55 MW111 TRANSISTOR 751
Contextual Info: SLOTTED OPTICAL SWITCH OPTOELECTRONICS OPB862T51/OPB862T55 PACKAGE DIMENSIONS .313 7.94 OPTICAL 125 (3’ 17)~ CENTERLINE - .485 (12.32) r .110 (2.79) E" .345 (8.76) 1— L .020 (o.5 i r r — .100 (2.54) y , .425 (10.90) MIN FEATURES i L\ PN 1 IDENTIFICATION

H22B1

Abstract: H22B2 H22B3 SLOTTED OPTICAL SWITCH darlington st134 a1l75
Contextual Info: £ BPTOELECTBDHiCS SLOTTED OPTICAL SWITCH H22B1/2/3 PACKAGE DIMENSIONS —*| fai I— l_ L </>b 3 I bi S E C T IO N X - X LEAD PR O FILE SYMBOL MflUMETERS MIN, MAX. 10.7 A 11.0 3.2 3.0 A, .600 4>b .750 .50 NOM. bi 11.6 12.0 Dì 3.0 3.3 D, 6.9 7.5 fit e2 2,3

3268

Contextual Info: c ? n SLOTTED OPTICAL SWITCH OPTOELECTRONICS CNY29 PACKAGE DIMENSIONS — D i- r+iT*p " t: SYMBOL i biri © MILLIMETERS MIN. A IM MAX, 11.0 .422 .433 A, 3.0 3.2 .119 ,125 30 3.2 .119 .125 .024 030 bi D 600 .750 .50 NOM. 24.7 °i D? 11.0 12.0 .457 .472 3.0

Diode FAJ 45

Abstract: Diode FAJ package
Contextual Info: 1 * GaAs INFRARED EMITTING DIODE IFTIELECTlllltS CQX14, CQX16 The CQX14/16 are 940nm LHDs in narrow angle, TQ-46 packages. SÊAHNÛ ST1332 N Good optica! to mechanical alignment SYMBOL INCHES MiN ' MAX. A 0b «>0 «•0, e * h i k L « .01« 209 255 .021 .230

Contextual Info: M O D E L B M L SERIES Surface Mount Multi-Layer Chip Inductors Size: 1206 O U T S T A N D IN G FEATURES APPLICATIONS • Tight dimensional tolerances and a small package make this chip ideal for high density installation • Monolithic structure for high reliability

Contextual Info: EQ GaAs INFRARED EMITTING DIODE OPlOELEtllOmtS CQX15, CQX17 DESCRIPTION The CQX15/17 are 940nm LEDs in wide angle, TO-46 packages. SEATING FEATURES SYMBOL A <£b 4>D #>, e ei h i k L a Good optical to mechanical alignment Mechanically and wavelength matched to TO-18

Contextual Info: SLOTTED OPTICAL SWITCH OPTOELECTRONICS H21B1/2/3 PACKAGE DIMENSIONS -<pp ©S 3r b-1 SECTION X - xT~ LEAD PROFILE ST1339-01 SYMBOL MILLIMETERS MAX, MIN. A 10.7 11.0 3.0 3.2 A, 3.0 3.2 A? <f>b .600 .750 .50 NOM. bi D 24.3 24.7 0, 12.0 11.6 3.0 3.3 o? 6.9

H23B1

Abstract: il232 sidelooker DIODE
Contextual Info: PLASTIC SIDELOOKER PAIR OPTOELECTRONICS H23B1 PACKAGE DIMENSIONS E f — D— -1 1-1 -j-1 J2 DESCRIPTION bl <pb bl SECTION X-X LEAD PROFILE 4 SYMBOL MILLIMETERS MIN. MAX. A 5.59 5.80 B 1.78 NOM. b .60 .75 .51 NOM. b, D 4.45 4.70 2.41 2.67

Contextual Info: SLOTTED OPTICAL SWITCH OPTOE LECTRONI CS OPB866N51/OPB866N55 PACKAGE DIMENSIONS DESCRIPTION Th e O P B 866N series of switches is d esigned to allow the SEE NOTE 3 user m axim um flexibility in applications. Each switch II consists of an infrared em itting diode facing an NPN

Contextual Info: EQ GaAs INFRARED EMITTING DIODE OPlOELEtllOmtS CQX15, CQX17 DESCRIPTION The CQX15/17 are 940nm LEDs in wide angle, TO-46 packages. SEATING FEATURES SYMBOL A <£b 4>D #>, e ei h i k L a Good optical to mechanical alignment Mechanically and wavelength matched to TO-18

Contextual Info: HERMETIC SILICON PHOTOTRANSISTOR OPTOELECTBQIICS L14C1/C2 PACKAGE DIMENSIONS The L14C series is a silicon phototransistor mounted in a wide angle, TO-18 package. •- <f>D-• UJ z I*— <pDl —-J a « o h 4 i z A . I FEATURES ST1336 SYMBOL INCHES

Contextual Info: AIGaAs INFRARED EMITTING DIODE OPTOELECTRONICS F5G1 The F5G1 is an 880nm LED encapsulated in a clear, wide angle, sidelooker package. — D— * ï E f — I bi 1- 1 - 1 j-1 Green H? Color '¿b-— Code SECTION x -x LEAD PROFILE a I •* T i «•