CEW 55 Search Results

cew 55

Contextual Info: =W e9 S H See Pag CAW o R oir / 54 à/to 65 CEW 54 à/to 65 Appellation commerciale / Commercial type CAW 54 9 ± 0,1 Version R 0,3 ± 0,05 15 min. Version AR Version W % Ø 0,8 +- 10 0,05 у 30 CARACTERISTIQUES GENERALES Diélectrique Céramique haute tension

Contextual Info: =W e9 S H e Pag CAW 54 à/to 65 CEW 54 à/to 65 Appellation commerciale / Commercial type CAW 54 L, W, T : ± 0,5 mm 9 ± 0,1 Version R 15 min. 0,3 ± 0,05 Version AR Version W % Ø 0,8 +- 10 0,05 у 30 CARACTERISTIQUES GENERALES Diélectrique Céramique haute tension

Contextual Info: I S66WVC4M16ALL I S67WVC4M16ALL 64Mb Async/Page/Burst CellularRAM 1.5 Overview The IS66WVC4M16ALL is an integrated memory device containing 64Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 4M words by 16 bits. The device includes several

cew 55

Contextual Info: I S66WVC2M16DALL 32Mb Async/Page/Burst CellularRAM 1.5 Overview The IS66WVC2M16DALL is an integrated memory device containing 32Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 2M words by 16 bits. The device includes several

Contextual Info: CONDENSATEURS CERAMIQUE DE PUISSANCE POWER CERAMIC CAPACITORS GENERALITES GENERAL INFORMATION SPT 519 SPT 519 Ces condensateurs à diélectrique céramique et sorties par rubans d’argent sont des composants haute tension et fort courant qui permettent de

CNX48 U

Contextual Info: N AUER PHILIPS/DISCRETE 5SE D bbS3T31 QDa01fl3 1 CNX48 T - V - g f OPTOCOUPLER Opto-isolator comprising an infrared emitting GaAs diode and a silicon npn Darlington phototransistor with accessible base. Plastic 6-lead dual-in line D IL envelope. Features

Contextual Info: N AMER PHILIPS/DISCRETE 5SE D bbS3131 OOEQ^Sl T CNX38 OPTOCOUPLER Optically coupled isolator consisting o f an infrared emitting GaAs diode and a silicon npn phototransistor w ith accessible base. Plastic envelope. Suitable fo r TTL integrated circuits. Features

BUF410

Abstract: ISO218 transistor BB 112 BUF410FI
Contextual Info: BUF410/410FI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • ■ ■ ■ ■ ■ SGS-THOMSON PREFERRED SALESTYPES HIGH VOLTAGE CAPABILITY VERY HIGH SWITCHING SPEED MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION LOW BASE-DRIVE REQUIREMENTS U.L. RECOGNISED ISOWATT218 PACKAGE

Contextual Info: f Z 7 S G S -T H O M S O N Ä T# 5 BUV62A m O T K S FAST SWITCHING POWER TRANSISTOR • ■ ■ ■ F A S T S W IT C H IN G TIM E S LO W S W IT C H IN G LO S S E S LO W BASE C U R R E N T R E Q U IR E M E N T S V E R Y LO W S A T U R A T IO N V O L T A G E A N D

FT5759M

Contextual Info: January 1990 Edition 1.1 FUJITSU PRODUCT PROFILE . FT5759M Silicon Darlington Transistor Array ABSOLUTE M A X IM U M R A TIN G S Rating Symbol Condition Value Unit -55 - +1 50 “C T, + 150 °C Collector to Base Voltage VcBO -100 V Emitter to Base Voltage

212 optocoupler

Abstract: Optocoupler le 25 CNX48U
Contextual Info: CNX48U OPTOCOUPLER W /& O pto-isolator comprising an infrared em itting GaAs diode and a silicon npn Darlington phototransistor w ith accessible base. Plastic 6-lead dual-in line D IL envelope. Features • V ery high o u tp u t/in p u t DC current transfer ratio

Contextual Info: BUD600 wmmt Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features • Simple-sWitch-Off Transistor SWOT • Very low dynamic saturation • HIGH SPEED technology • Very low operating temperature • Planar passivation • Optimized RBSOA

Contextual Info: REPERTOIRE ALPHANUMERIQUE ALPHANUMERIC INDEX 2 Modèle Page Modèle Page Modèle Page Modèle Page Modèle Page Modèle Page Modèle Page BPM 12 BPM 22 BPM 24 BPM 224 C3E C3N C4E C4N C 179 C 180 C 180 L C 180 P C 180 PL C 180 R C 181 C 181 L C 181 P C 181 PL

Contextual Info: REPERTOIRE ALPHANUMERIQUE ALPHANUMERIC INDEX 2 Modèle Page Modèle Page Modèle Page Modèle Page Modèle Page Modèle Page Modèle Page BPM 12 BPM 22 BPM 24 BPM 224 C3E C3N C4E C4N C 179 C 180 C 180 L C 180 P C 180 PL C 180 R C 181 C 181 L C 181 P C 181 PL

BUD636A

Contextual Info: v S S r _ BUD636A ▼ Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features • Simple-sWitch-Off Transistor SWOT • Very low dynamic saturation • HIGH SPEED technology • Very low operating temperature

CNX21

Abstract: "kv diode" sot211 121 optocoupler
Contextual Info: CNX21 A HIGH-VOLTAGE OPTOCOUPLER O ptically coupled isolator consisting o f an infrared em itting GaAs diode and a silicon n-p-n photo­ transistor. The base is n o t accessible. Features o f this product: • very high isolation voltage o f 10 kV d.c. .

facon capacitors

Abstract: CEC CAPACITORS resistor codification EUROFARAD EUROFARAD CAPACITORS datasheet EUROFARAD cec EUROFARAD cec 14 cec 2r0 1 CEW65 E24-E48-E96
Contextual Info: CONDENSATEURS CHIPS CERAMIQUE HYPERFREQUENCE MICROWAVE CERAMIC CHIP CAPACITORS SOMMAIRE SUMMARY Généralités sur les chips céramique multicouches hyperfréquence Feuilles particulières sur les chips céramique multicouches hyper. Généralités sur les condensateurs céramique monocouches hyper.

transistor SMD wm

Contextual Info: BUD636A wm m t Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features • Simple-sWitch-Off Transistor SWOT • Very low dynamic saturation • HIGH SPEED technology • Very low operating temperature • Planar passivation • Optimized RBSOA

ceramic capacitor Eurofarad X7R

Abstract: CEC CAPACITORS EUROFARAD capacitor datasheet ceramique EUROFARAD cec cea 271 EUROFARAD EUROFARAD CAPACITORS datasheet EUROFARAD datasheet CECC32101
Contextual Info: CONDENSATEURS CHIPS CERAMIQUE HYPERFREQUENCE MICROWAVE CERAMIC CHIP CAPACITORS SOMMAIRE SUMMARY Généralités sur les chips céramique multicouches hyperfréquence Feuilles particulières sur les chips céramique multicouches hyper. Généralités sur les condensateurs céramique monocouches hyper.

CNX62

Abstract: BS415 DDS1015
Contextual Info: N AMER PHILIPS/DISCRETE 2SE D • b b S S ^ l GOHIQÜ? .1 ■ CNX62 T - H l - S Z HIGH-VOLTAGE OPTOCOUPLER The CNX62 is an optocoupler consisting of an infrared emitting GaAs diode and a silicon npn phototransistor in a dual-in-line DIL plastic envelope. The base is not connected.

BUF672

Contextual Info: _ BUF672 Vishay Telefunken Silicon NPN High Voltage Sw itching Transistor Features • Simple-sWitch-Off Transistor S W O T • HIGH SPEED technology • Planar passivation • 100 kHz switching rate • Very low switching losses

HD H101

Abstract: CNG36 CNG35 SOT-90B SOT90B
Contextual Info: CNG35 CNG36 T O GaAIAs OPTOCOUPLERS O ptica lly coupled isolators consisting o f an infrared em itting GaAIAs diode and a silicon npn photo­ transistor w ith accessible base in a SOT90B envelope, designed fo r low input current and long life operation. The application o f an IR em ittin g diode, based on a special GaAIAs intrinsic process results in a

Transistor 3TY

Contextual Info: I I ÛU AL ITY T E C H N O L O G I E S CORP S7E D • 7 4 b b ô 5 1 0 G G4 41 7 212 « f l T Y U N u a t» CNG36 GaAIAs OPTOCOUPLERS O ptically coupled isolators consisting o f an infrared emitting GaAIAs diode and a silicon npn phototransistor w ith accessible base in a SOT90B envelope, designed fo r low input current and long life

philips cnx82a

Abstract: CNX83A CNX82A DE0805 435A CNX83 PHHI BS415 BS7002 25KVDC
Contextual Info: Produ ct sp ecification Philip» Semiconductors High-voltage optocouplers CNX82A/CNX83A FEATURES • High current transfer ratio and low saturation voltage, making the devices suitable tor use with TTL Integrated circuits • High degree of A C and DC insulation 3750 V (RMS and