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CEF10N Datasheets (3)

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Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
CEF10N4		Chino-Excel Technology	N-Channel Enhancement Mode FET	Original	PDF	83.56KB	4
CEF10N4		Unknown		Original	PDF	40.66KB	5
CEF10N6		Chino-Excel Technology	N-channel Enhancement Mode Field Effect Transistor TO-220FM Package	Original	PDF	41.65KB	5

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ILME UK Ltd


ILME UK Ltd CMCEF 10 N Connector: HDC; contact insert; female; CMCE; PIN: 10; 16A; 600V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	CMCEF 10 N				30	1 - 10 - 100 $10.17 1000 $10.17 10000 $10.17	Get Quote

CEF10N Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
CEF10N4 Contextual Info: CEF10N4 Sep. 2002 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES D 450V ,5.6A ,RDS ON = 700m Ω @VGS=10V. Super high dense cell design for extremely low RDS(ON). 6 High power and current handling capability. TO-220F full-pak for through hole.	Original	cef10n4 o-220f	PDF
CEB10N6 Abstract: CEF10N6 CEP10N6 Contextual Info: CEP10N6/CEB10N6 CEF10N6 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS ON ID @VGS CEP10N6 600V 0.75Ω 10A 10V CEB10N6 600V 0.75Ω 10A 10V CEF10N6 600V 0.75Ω 10A d 10V D Super high dense cell design for extremely low RDS(ON).	Original	cep10n6/ceb10n6 cef10n6 cep10n6 ceb10n6 +4o-263 o-220 o-220f o-220/263	PDF
DC1060 Abstract: CEF10N Contextual Info: CEF10N6S N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type CEF10N6S VDSS RDS ON ID @VGS 600V 0.75Ω 10A d 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.	Original	cef10n6s o-220f dc1060 cef10n	PDF
CEF10N6 Abstract: 61M10 MJ10 Contextual Info: CEF10N6 PRELIMINARY N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES 6 D 600V , 5.7A , RDS ON =1Ω @VGS=10V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220F full-pak for through hole	Original	cef10n6 o-220f 61m10 mj10	PDF
CEP10N4 Abstract: CEB10N4 CEF10N4 CEI10N4 CEF10 Contextual Info: CEP10N4/CEB10N4 CEI10N4/CEF10N4 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS ON ID @VGS CEP10N4 450V 0.7Ω 10A 10V CEB10N4 450V 0.7Ω 10A 10V CEI10N4 450V 0.7Ω 10A 10V CEF10N4 450V 0.7Ω 10A e 10V D Super high dense cell design for extremely low RDS(ON).	Original	cep10n4/ceb10n4 cei10n4/cef10n4 cep10n4 ceb10n4 +7cei10n4 cef10n4 o-220 o-263 o-262 o-220f cef10	PDF
CEB10N6 Abstract: CEF10N6 CEP10N6 Contextual Info: CEP10N6/CEB10N6 CEF10N6 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS ON ID @VGS CEP10N6 600V 0.75Ω 10A 10V CEB10N6 600V 0.75Ω 10A 10V CEF10N6 600V 0.75Ω 10A d 10V D Super high dense cell design for extremely low RDS(ON).	Original	cep10n6/ceb10n6 cef10n6 cep10n6 ceb10n6 +4o-263 o-220 o-220f o-220/263	PDF
CEP10N4 Abstract: CEB10N4 CEF10N4 CEI10N4 412ID Contextual Info: CEP10N4/CEB10N4 CEI10N4/CEF10N4 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS ON ID @VGS CEP10N4 450V 0.7Ω 10A 10V CEB10N4 450V 0.7Ω 10A 10V CEI10N4 450V 0.7Ω 10A 10V CEF10N4 450V 0.7Ω 10A e 10V D Super high dense cell design for extremely low RDS(ON).	Original	cep10n4/ceb10n4 cei10n4/cef10n4 cep10n4 ceb10n4 +7cei10n4 cef10n4 o-220 o-263 o-262 o-220f 412id	PDF
CEP50N06 Abstract: CEP83A3 equivalent cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139 Contextual Info: Contents Power Mosfet Selection Guide N CHANNEL Package Page SO-8 2 TO-251/TO-252 3 TO-220/TO-263 4-5 SOT-23 5 SOT-223 5 SOT-89 5 TSOP-6 5 TSSOP-8 6 TO-92 6 2928-8J 6 TO-220FM 6 P CHANNEL Package Page SO-8 7 TO-251/TO-252 7 TO-220/TO-263 8 SOT-23 8 SOT-223	Original	o-251/to-252 o-220/to-263 ot-23 ot-223 +13ot-89 2928-8j o-220fm cep50n06 cep83a3 equivalent cep83a3 cef02n6a cep6355 fqpf8n60c equivalent cef04n6 equivalent cep63a3 cep20n06 cep76139	PDF