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    CEF10 Search Results

    CEF10 Datasheets (3)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    CEF10N4
    		Chino-Excel Technology N-Channel Enhancement Mode FET Original PDF 83.56KB 4
    CEF10N4
    		Unknown Original PDF 40.66KB 5
    CEF10N6
    		Chino-Excel Technology N-channel Enhancement Mode Field Effect Transistor TO-220FM Package Original PDF 41.65KB 5
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    CEF10 Price and Stock

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    Mencom Corporation CCEF-10

    Standard - CCE series - Female Rectangular Insert - size 57.27 - 10 pin - 16 amp - Crimp
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Master Electronics CCEF-10
    • 1 -
    • 10 $15.72
    • 100 $13.03
    • 1000 $12.00
    • 10000 $12.00
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    Omega Engineering SMPW-CC-E-F-100

    MINIATURE SIZE THERMOCOUPLE CONNECTORS - Bulk (Alt: SMPW-CC-E-F-100)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SMPW-CC-E-F-100 Bulk 2 Weeks, 1 Days 1
    • 1 $615.31
    • 10 $615.31
    • 100 $615.31
    • 1000 $615.31
    • 10000 $615.31
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    Omega Engineering OSTW-CC-E-F-100

    THERMOCOUPLE CONNECTOR STANDARD SIZE ROUND 2 PIN INCLUDES INTEGRAL CABLE CLAMP CAP - Bulk (Alt: OSTW-CC-E-F-100)
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    Avnet Americas OSTW-CC-E-F-100 Bulk 3 Weeks 1
    • 1 $1110.45
    • 10 $1110.45
    • 100 $1110.45
    • 1000 $1110.45
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    BlockMaster Blocks DGPBHRACEF1-02-ON

    |Blockmaster Electronics DGPBHRACEF1-02-ON
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    Newark DGPBHRACEF1-02-ON Bulk 1
    • 1 $0.58
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    • 100 $0.42
    • 1000 $0.32
    • 10000 $0.26
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    BlockMaster Blocks DGPBHRACEF1-08-ON

    |Blockmaster Electronics DGPBHRACEF1-08-ON
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    Newark DGPBHRACEF1-08-ON Bulk 1
    • 1 $1.92
    • 10 $1.70
    • 100 $1.33
    • 1000 $1.02
    • 10000 $0.82
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    CEF10 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    CEF10N4

    Contextual Info: CEF10N4 Sep. 2002 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES D 450V ,5.6A ,RDS ON = 700m Ω @VGS=10V. Super high dense cell design for extremely low RDS(ON). 6 High power and current handling capability. TO-220F full-pak for through hole.


    Original     		cef10n4o-220f PDF

    CEB10N6

    Abstract: CEF10N6 CEP10N6
    Contextual Info: CEP10N6/CEB10N6 CEF10N6 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS ON ID @VGS CEP10N6 600V 0.75Ω 10A 10V CEB10N6 600V 0.75Ω 10A 10V CEF10N6 600V 0.75Ω 10A d 10V D Super high dense cell design for extremely low RDS(ON).


    Original     		cep10n6/ceb10n6cef10n6cep10n6ceb10n6+4o-263o-220o-220fo-220/263 PDF

    DC1060

    Abstract: CEF10N
    Contextual Info: CEF10N6S N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type CEF10N6S VDSS RDS ON ID @VGS 600V 0.75Ω 10A d 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.


    Original     		cef10n6so-220fdc1060cef10n PDF

    CEF10N6

    Abstract: 61M10 MJ10
    Contextual Info: CEF10N6 PRELIMINARY N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES 6 D 600V , 5.7A , RDS ON =1Ω @VGS=10V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220F full-pak for through hole


    Original     		cef10n6o-220f61m10mj10 PDF

    CEP10N4

    Abstract: CEB10N4 CEF10N4 CEI10N4 CEF10
    Contextual Info: CEP10N4/CEB10N4 CEI10N4/CEF10N4 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS ON ID @VGS CEP10N4 450V 0.7Ω 10A 10V CEB10N4 450V 0.7Ω 10A 10V CEI10N4 450V 0.7Ω 10A 10V CEF10N4 450V 0.7Ω 10A e 10V D Super high dense cell design for extremely low RDS(ON).


    Original     		cep10n4/ceb10n4cei10n4/cef10n4cep10n4ceb10n4+7cei10n4cef10n4o-220o-263o-262o-220fcef10 PDF

    CEB10N6

    Abstract: CEF10N6 CEP10N6
    Contextual Info: CEP10N6/CEB10N6 CEF10N6 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS ON ID @VGS CEP10N6 600V 0.75Ω 10A 10V CEB10N6 600V 0.75Ω 10A 10V CEF10N6 600V 0.75Ω 10A d 10V D Super high dense cell design for extremely low RDS(ON).


    Original     		cep10n6/ceb10n6cef10n6cep10n6ceb10n6+4o-263o-220o-220fo-220/263 PDF

    CEP10N4

    Abstract: CEB10N4 CEF10N4 CEI10N4 412ID
    Contextual Info: CEP10N4/CEB10N4 CEI10N4/CEF10N4 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS ON ID @VGS CEP10N4 450V 0.7Ω 10A 10V CEB10N4 450V 0.7Ω 10A 10V CEI10N4 450V 0.7Ω 10A 10V CEF10N4 450V 0.7Ω 10A e 10V D Super high dense cell design for extremely low RDS(ON).


    Original     		cep10n4/ceb10n4cei10n4/cef10n4cep10n4ceb10n4+7cei10n4cef10n4o-220o-263o-262o-220f412id PDF

    CEP50N06

    Abstract: CEP83A3 equivalent cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139
    Contextual Info: Contents Power Mosfet Selection Guide N CHANNEL Package Page SO-8 2 TO-251/TO-252 3 TO-220/TO-263 4-5 SOT-23 5 SOT-223 5 SOT-89 5 TSOP-6 5 TSSOP-8 6 TO-92 6 2928-8J 6 TO-220FM 6 P CHANNEL Package Page SO-8 7 TO-251/TO-252 7 TO-220/TO-263 8 SOT-23 8 SOT-223


    Original     		o-251/to-252o-220/to-263ot-23ot-223+13ot-892928-8jo-220fmcep50n06cep83a3 equivalentcep83a3cef02n6acep6355fqpf8n60c equivalentcef04n6 equivalentcep63a3cep20n06cep76139 PDF

    ty 617 equivalent

    Abstract: B0140 MT619 FMMT619
    Contextual Info: SuperSOT SOT23 NPN SILICON POWER SWITCHING TRANSISTORS FMMT617 FMMT618 FMMT619 FMMT624 FMMT625 ISSU E 3 - NOVEMBER 1995_ FEATURES * 625m W POWER DISSIPATION * * * * * lc CONT 3A 12A Peak Pulse Current Excellent HFE Characteristics Up To 12A (pulsed)


    OCR Scan     		fmmt617fmmt618fmmt619fmmt624+5fmmt62550mslty 617 equivalentb0140mt619 PDF