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    CEF10 Search Results

    CEF10 Datasheets (3)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    CEF10N4
    		Chino-Excel Technology N-Channel Enhancement Mode FET Original PDF 83.56KB 4
    CEF10N4
    		Unknown Original PDF 40.66KB 5
    CEF10N6
    		Chino-Excel Technology N-channel Enhancement Mode Field Effect Transistor TO-220FM Package Original PDF 41.65KB 5
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    Omega Engineering SMPW-CC-E-F-100

    SMPW-CC-E-F-100
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    Omega Engineering OSTW-CC-E-F-100

    OSTW-CC-E-F-100
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    CEF10 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    CEF10N4

    Contextual Info: CEF10N4 Sep. 2002 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES D 450V ,5.6A ,RDS ON = 700m Ω @VGS=10V. Super high dense cell design for extremely low RDS(ON). 6 High power and current handling capability. TO-220F full-pak for through hole.


    Original     		CEF10N4 O-220F O-220F CEF10N4 PDF

    CEB10N6

    Abstract: CEF10N6 CEP10N6
    Contextual Info: CEP10N6/CEB10N6 CEF10N6 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS ON ID @VGS CEP10N6 600V 0.75Ω 10A 10V CEB10N6 600V 0.75Ω 10A 10V CEF10N6 600V 0.75Ω 10A d 10V D Super high dense cell design for extremely low RDS(ON).


    Original     		CEP10N6/CEB10N6 CEF10N6 CEP10N6 CEB10N6 O-263 O-220 O-220F O-220/263 CEB10N6 CEF10N6 CEP10N6 PDF

    DC1060

    Abstract: CEF10N
    Contextual Info: CEF10N6S N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type CEF10N6S VDSS RDS ON ID @VGS 600V 0.75Ω 10A d 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.


    Original     		CEF10N6S O-220F DC1060 CEF10N PDF

    CEF10N6

    Abstract: 61M10 MJ10
    Contextual Info: CEF10N6 PRELIMINARY N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES 6 D 600V , 5.7A , RDS ON =1Ω @VGS=10V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220F full-pak for through hole


    Original     		CEF10N6 O-220F O-220F CEF10N6 61M10 MJ10 PDF

    CEP10N4

    Abstract: CEB10N4 CEF10N4 CEI10N4 CEF10
    Contextual Info: CEP10N4/CEB10N4 CEI10N4/CEF10N4 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS ON ID @VGS CEP10N4 450V 0.7Ω 10A 10V CEB10N4 450V 0.7Ω 10A 10V CEI10N4 450V 0.7Ω 10A 10V CEF10N4 450V 0.7Ω 10A e 10V D Super high dense cell design for extremely low RDS(ON).


    Original     		CEP10N4/CEB10N4 CEI10N4/CEF10N4 CEP10N4 CEB10N4 CEI10N4 CEF10N4 O-220 O-263 O-262 O-220F CEP10N4 CEB10N4 CEF10N4 CEI10N4 CEF10 PDF

    CEB10N6

    Abstract: CEF10N6 CEP10N6
    Contextual Info: CEP10N6/CEB10N6 CEF10N6 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS ON ID @VGS CEP10N6 600V 0.75Ω 10A 10V CEB10N6 600V 0.75Ω 10A 10V CEF10N6 600V 0.75Ω 10A d 10V D Super high dense cell design for extremely low RDS(ON).


    Original     		CEP10N6/CEB10N6 CEF10N6 CEP10N6 CEB10N6 O-263 O-220 O-220F O-220/263 CEB10N6 CEF10N6 CEP10N6 PDF

    CEP10N4

    Abstract: CEB10N4 CEF10N4 CEI10N4 412ID
    Contextual Info: CEP10N4/CEB10N4 CEI10N4/CEF10N4 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS ON ID @VGS CEP10N4 450V 0.7Ω 10A 10V CEB10N4 450V 0.7Ω 10A 10V CEI10N4 450V 0.7Ω 10A 10V CEF10N4 450V 0.7Ω 10A e 10V D Super high dense cell design for extremely low RDS(ON).


    Original     		CEP10N4/CEB10N4 CEI10N4/CEF10N4 CEP10N4 CEB10N4 CEI10N4 CEF10N4 O-220 O-263 O-262 O-220F CEP10N4 CEB10N4 CEF10N4 CEI10N4 412ID PDF

    CEP50N06

    Abstract: CEP83A3 equivalent cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139
    Contextual Info: Contents Power Mosfet Selection Guide N CHANNEL Package Page SO-8 2 TO-251/TO-252 3 TO-220/TO-263 4-5 SOT-23 5 SOT-223 5 SOT-89 5 TSOP-6 5 TSSOP-8 6 TO-92 6 2928-8J 6 TO-220FM 6 P CHANNEL Package Page SO-8 7 TO-251/TO-252 7 TO-220/TO-263 8 SOT-23 8 SOT-223


    Original     		O-251/TO-252 O-220/TO-263 OT-23 OT-223 OT-89 2928-8J O-220FM CEP50N06 CEP83A3 equivalent cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139 PDF

    ty 617 equivalent

    Abstract: B0140 MT619 FMMT619
    Contextual Info: SuperSOT SOT23 NPN SILICON POWER SWITCHING TRANSISTORS FMMT617 FMMT618 FMMT619 FMMT624 FMMT625 ISSU E 3 - NOVEMBER 1995_ FEATURES * 625m W POWER DISSIPATION * * * * * lc CONT 3A 12A Peak Pulse Current Excellent HFE Characteristics Up To 12A (pulsed)


    OCR Scan     		FMMT617 FMMT618 FMMT619 FMMT624 FMMT625 50mSl FMMT625 ty 617 equivalent B0140 MT619 PDF