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DC1060 Abstract: CEF10N Contextual Info: CEF10N6S N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type CEF10N6S VDSS RDS ON ID @VGS 600V 0.75Ω 10A d 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.	Original	cef10n6s o-220f dc1060 cef10n	PDF

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DC1060

Abstract: CEF10N
Contextual Info: CEF10N6S N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type CEF10N6S VDSS RDS ON ID @VGS 600V 0.75Ω 10A d 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.

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cef10n6s o-220f dc1060 cef10n

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