CEB10N6
Abstract: CEF10N6 CEP10N6
Contextual Info: CEP10N6/CEB10N6 CEF10N6 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS ON ID @VGS CEP10N6 600V 0.75Ω 10A 10V CEB10N6 600V 0.75Ω 10A 10V CEF10N6 600V 0.75Ω 10A d 10V D Super high dense cell design for extremely low RDS(ON).
|
Original
|
cep10n6/ceb10n6cef10n6cep10n6ceb10n6+4o-263o-220o-220fo-220/263
|
PDF
|
DC1060
Abstract: CEF10N
Contextual Info: CEF10N6S N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type CEF10N6S VDSS RDS ON ID @VGS 600V 0.75Ω 10A d 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.
|
Original
|
cef10n6so-220fdc1060cef10n |
PDF
|
CEF10N6
Abstract: 61M10 MJ10
Contextual Info: CEF10N6 PRELIMINARY N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES 6 D 600V , 5.7A , RDS ON =1Ω @VGS=10V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220F full-pak for through hole
|
Original
|
cef10n6o-220f61m10mj10 |
PDF
|
CEB10N6
Abstract: CEF10N6 CEP10N6
Contextual Info: CEP10N6/CEB10N6 CEF10N6 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS ON ID @VGS CEP10N6 600V 0.75Ω 10A 10V CEB10N6 600V 0.75Ω 10A 10V CEF10N6 600V 0.75Ω 10A d 10V D Super high dense cell design for extremely low RDS(ON).
|
Original
|
cep10n6/ceb10n6cef10n6cep10n6ceb10n6+4o-263o-220o-220fo-220/263
|
PDF
|