CD0000 Search Results

Contextual Info: CD00003411 Rev 1.3 IN APPROVAL PAGE A ft 6+2-Ch. multistandard audio decoder Technical Literature s ct u d o ra r P e -D t e l o s b O Alternate Identifier(s) ) (s t c u ISO Definition od b O Product Development Specification Public Document Type Technical Literature

L9346

Abstract: L9346DIE L9346PD SO20
Contextual Info: CD00001299 Rev 3.0 ACTIVE PAGE A QUAD INTELLIGENT POWER LOW SIDE SWITCH Datasheet DOCUMENT HISTORY Version Rev 3.0 Release Date No history included due to Migration. See it in Edocs. Change Qualifier Migration CD00001299 Rev 3.0 ACTIVE PAGE B DOCUMENT APPROVAL

L7250

Abstract: l7250 for driver motor TQFP64 spindle and VCM motor controller hard disk head preamp nobrak L7250 ST
Contextual Info: CD00002551 Rev 1.0 ACTIVE PAGE A 5V AND 12V SPINDLE AND VCM MOTORS DRIVER Datasheet DOCUMENT HISTORY Version Rev 1.0 Release Date No history included due to Migration. See it in Edocs. Change Qualifier Migration CD00002551 Rev 1.0 ACTIVE PAGE B DOCUMENT APPROVAL

SSO24

Abstract: L7203 L7203S SO20 l720
Contextual Info: CD00002413 Rev 1.0 ACTIVE PAGE A SMOOTH DRIVE SPINDLE MOTOR FOR OPTICAL DRIVE APPLICATION WITH POWER INTEGRATED Datasheet DOCUMENT HISTORY Version Rev 1.0 Release Date No history included due to Migration. See it in Edocs. Change Qualifier Migration CD00002413

L6363

Abstract: TQFP100
Contextual Info: CD00002472 Rev 1.0 ACTIVE PAGE A PRML READ/WRITE CHANNEL Datasheet DOCUMENT HISTORY Version Rev 1.0 Release Date No history included due to Migration. See it in Edocs. Change Qualifier Migration CD00002472 Rev 1.0 ACTIVE PAGE B DOCUMENT APPROVAL Name Function

TDA7575

Abstract: Gv2 overload TDA7575PD 2x40W X000XXXX
Contextual Info: CD00003142 Rev 3.0 ACTIVE PAGE A MULTIFUNCTION DUAL BRIDGE POWER AMPLIFIER WITH INTEGRATED DIGITAL DIAGNOSTICS Datasheet DOCUMENT HISTORY Version Rev 3.0 Release Date Change Offset Voltage pag.3 : min=−45mV; max=45mV; Update of the "Package Mechanical Data" page.

s7607

Abstract: 70nH L6332 L6327 TSSOP38 TSSOP-38 eTSSOP-38
Contextual Info: CD00002340 Rev 1.0 ACTIVE PAGE A 6/4 CHANNEL VOLTAGE SENSE GMR PREAMPLIFIER Datasheet DOCUMENT HISTORY Version Rev 1.0 Release Date No history included due to Migration. See it in Edocs. Change Qualifier Migration CD00002340 Rev 1.0 ACTIVE PAGE B DOCUMENT APPROVAL

Contextual Info: CD00001880 Rev 7.2 IN APPROVAL PAGE A ft RF power transistor the LdmoST family -D ra Technical Literature Alternate Identifier s Key process 6733 Product Development Dr ISO Definition aft CUSTOM ATTRIBUTES ft - Confidentiality Level Specification Public Technical Literature

Contextual Info: CD00002394 Rev 7.2 IN APPROVAL PAGE A ft RF power transistor the LdmoST family -D ra Technical Literature Alternate Identifier s Key process 7719 Product Development Dr ISO Definition aft CUSTOM ATTRIBUTES ft - Confidentiality Level Specification Public Technical Literature

GMR amr amplifier

Abstract: INTEGRATED CIRCUIT DATE code stmicroelectronics ADTV l632 L6326 TSSOP24 CD00002339 GMR head preamplifier
Contextual Info: CD00002339 Rev 1.0 ACTIVE PAGE A 2 CHANNEL VOLTAGE SENSE AMR/GMR PREAMPLIFIERS Datasheet DOCUMENT HISTORY Version Rev 1.0 Release Date No history included due to Migration. See it in Edocs. Change Qualifier Migration CD00002339 Rev 1.0 ACTIVE PAGE B DOCUMENT APPROVAL

SA6954

Abstract: S29WS064N S29WS128N S29WS256N WS128N FFC00
Contextual Info: S29WSxxxN MirrorBit Flash Family S29WS256N, S29WS128N, S29WS064N 256/128/64 Megabit 16/8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory PRELIMINARY Distinctive Characteristics Architectural Advantages „ Single 1.8 volt read, program and erase (1.70 to

DTB 0124 DP

Abstract: 4825B CD0001 0549F 8342H F2MC-16 F2MC-16F PS8713
Contextual Info: FUJITSU SEMICONDUCTOR CONTROLLER MANUAL CM42-00101-2E F2MC-16F 16-BIT MICROCONTROLLER MB90200 SERIES PROGRAMMING MANUAL PREFACE • Objectives and intended readership Fujitsu’s MB90200 series is a lineup of 16-bit single-chip microcontrollers which can be provided

packing SPECIFICATION to-247

Contextual Info: VNW35NV04 VNP35NV04 OMNIFET II fully autoprotected Power MOSFET Datasheet − production data Features Type RDS on Ilim Vclamp VNW35NV04 VNP35NV04 10 mΩ 30 A 40 V 3 c u d TO-247 • Linear current limitation ■ Thermal shut down ■ Short circuit protection

C000H-DFFFH

Abstract: 24Blocks FB0000h-FBFFFFh 9F0000h-9FFFFFh C10000h-C1FFFFh FF4000h-FF5FFFh 8a0000h8affffh
Contextual Info: ADVANCED INFORMATION MX29LW128T/B/U/D 128M-BIT [16M x 8 / 8M x 16] SINGLE VOLTAGE 3V ONLY PAGE MODE FLASH MEMORY FEATURES GENERAL • 8M word x 16 Bit /16M Byte x 8 Bit switchable Power Supply Voltage - VCC=2.7V to 3.6V for read, erase and program operation

A81DC

Abstract: a21dc a51dc SG 2368 FE8800 ED8000 E78000 FA6400 0110FFFF e7040
Contextual Info: MOTOROLA Order at ANE408/0 SEMICONDUCTOR APPLICATION NOTE ANE408 Previously ANE008 Logarithmic/Linear Conversion Routines for DSP56000/1 Prepared by: Eric Cheval Motorola G eneva, Switzerland I. INTRODUCTION DSP chips are often connected to mono-circuits (cofidecs) in telecommunication applications. When programmed *Cs multichannel DTMF

JESD97

Abstract: M29DW128F TSOP56 6C80
Contextual Info: M29DW128F 128 Mbit 16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block 3V supply Flash memory Feature summary • Supply voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ Asynchronous Random/Page Read

SA452

Abstract: SA336 SA424 120R S29GL512N SA487 EE8000 a78000a7ffff c58000c5ffff SA4871
Contextual Info: Am29LV2562M Data Sheet RETIRED PRODUCT This product has been retired and is not available for designs. For new and current designs, S29GL512N supersedes Am29LV2562M and is the factory-recommended migration path. Please refer to the S29GL512N Data Sheet for specifications and ordering information. Availability of this

S29WS256N

Abstract: S71WS512NE0BFWZZ
Contextual Info: S71WS512NE0BFWZZ Stacked Multi-Chip Product MCP Flash Memory and pSRAM CMOS 1.8 Volt, Simultaneous Operation, Burst Mode Flash Memory and Pseudo-Static RAM ADVANCE INFORMATION DISTINCTIVE CHARACTERISTICS GENERAL DESCRIPTION MCP Features The S71WS512 Series is a product line of stacked Multi-Chip

M29W128FL

Abstract: Memory Protection Devices M29W128FH JESD97 M29W128F TSOP56
Contextual Info: M29W128FH M29W128FL 128 Mbit 8Mb x 16 or 16Mb x 8, Page, Uniform Block 3V Supply Flash Memory Feature summary • Supply voltage – VCC = 2.7 to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ Asynchronous Random/Page Read

FL128P

Abstract: SPANSION FL128P
Contextual Info: S25FL128P 128 Megabit CMOS 3.0 Volt Flash Memory with 104-MHz SPI Serial Peripheral Interface Bus Data Sheet S25FL128P Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion product(s) described herein. Each product described herein may be designated as Advance Information,

samsung electronics ba41

Abstract: BA175
Contextual Info: Preliminary FLASH MEMORY K8C56 57 15ET(B)M 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

BA379

Abstract: BA377 BA339 BA438 BA429 BA416 ba-302 BA512 BA308 ba324
Contextual Info: K8A5615ET B A NOR FLASH MEMORY Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz

NS064N

Abstract: S29NS128N S29NS256N VDC048 S29NS256
Contextual Info: S29NSxxxN MirrorBitTM Flash Family S29NS256N, S29NS128N, S29NS064N 256/128/64 Megabit 16/8/4M x 16-bit , CMOS 1.8 Volt-only Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory ADVANCE INFORMATION Distinctive Characteristics „ Single 1.8 volt read, program and erase (1.70

JESD97

Abstract: M29DW128F TSOP56 esn 234 D2578 5PWA
Contextual Info: M29DW128F 128 Mbit 16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block 3V supply Flash memory Features summary • Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional)