CD 100 TRANSISTOR Search Results

2n3054

Abstract: 40349
Contextual Info: Power Transistors Hometaxial-Base n-p-n Type Selection Charts h“FE A V CE V Temp.—°C 25 CD 'c V CEV^SUS* V 40 40 40 40 55 55 55 65 140 60 60 60 60 100 100 100 90 160 20-60 35-100 20-80 25-100 20-60 35-100 35-100 30-125 30-125 0.2 0.2 0.1 0.45 0.2 0.2

Contextual Info: Power Transistors Hometaxial-Base n-p-n Type Selection Charts h“FE A V CE V Temp.—°C 25 CD 'c V CEV^SUS* V 40 40 40 40 55 55 55 65 140 60 60 60 60 100 100 100 90 160 20-60 35-100 20-80 25-100 20-60 35-100 35-100 30-125 30-125 0.2 0.2 0.1 0.45 0.2 0.2

2Sj72

Abstract: transistor 2SC2655 2SK147 2sc2705 transistor 2sc2500 high voltage driver transistor 2sc2482 2SC238 2sc2383 2SC3225
Contextual Info: L-SSTM 9. TO-92 MOD PACKAGE SERIES co o CD N ro Ul o >TRANSISTOR ^ Application Type No. & SW V (pF) (pF) (V) 1 4 0 -6 0 0 * 1 5Ò0 0.5 2000 50 150 1 500 (27)/(50 10 0.9 1 0 0 -3 2 0 * * 2 100 0.5 800 80 150 2 100 (13) 10 1 Ü i—i 1.5 0.9 1 0 0 -3 2 0 * *

MAX3274

Abstract: MAX3274UGE MAX3275
Contextual Info: 19-2375; Rev 1; 7/03 Dual-Rate Fibre Channel Limiting Amplifier Features ♦ Dual-Rate 1.0625Gbps/2.125Gbps Operation ♦ On-Chip Selectable 4th-Order Filter ♦ Relaxation Oscillation Suppression of Legacy, CD Laser-Based Transmitters ♦ Available in a 100Ω Output Termination

2SC3378

Abstract: fet 2sK161 2SA1048 2SA1049 2SA1150 2SA1297 2SC2458 2SC2469 2SC2710 2SK184
Contextual Info: L. —3 O n X H CD 2. MINI PACKAGE SERIES > rH H H n 73 m —3 m \ o "O > TRANSISTOR < PC PNP V (mA) (mW) : 2SA1048 50 150 200 70—700/400 2SC2458(l ^2SA1048( l ) 50 150 200 High Voltage 2SC2469 ' 2SA1049 120 100 High Current 2SC2710 Ì2SA1150 30 800 High Current

2N3902

Contextual Info: TYPE 2N3902 N-P-N SILICON POWER TRANSISTOR HIGH VOLTAGE, HIGH FORWARD AND REVERSE ENERGY DESIGNED FOR INDUSTRIAL AND M IL IT A R Y APPLICATIONS X CD - I m C -< • 100 W at 75°C Case Temperature <- r V À 1 NJ m o jz • 400 V Collector-Emitter Off-State Voltage

2SC3340

Abstract: 2SA1324 2SC3339 2SC3426
Contextual Info: —3 10. SUPER MINI PACKAGE SERIES TO-236 MOD./SOT-23 MOD. C/i 1 H CD 3» rS M H n > TRANSISTOR << •c PC (V) (mA) (mW) 50 150 150 70 -700/400 6 V CE (V) >C (mA) (V) •c (mA) >B (mA) (MHz) 0.25/0.3 100 10 (80) NPN l General Purpose 2SC2712 ! High Voltage

MAX3274

Abstract: MAX3274UGE MAX3275 MAX3276 MAX3276UGE
Contextual Info: 19-2375; Rev 0; 4/02 Dual-Rate Fibre Channel Limiting Amplifiers Features ♦ Dual-Rate 1.0625Gbps/2.125Gbps Operation ♦ On-Chip Selectable 4th-Order Filter ♦ Relaxation Oscillation Suppression of Legacy, CD Laser-Based Transmitters ♦ Available in 100Ω and 150Ω Output Terminations

TIP519

Contextual Info: TYPES TIP519, TIP520 P-N-P SILICON POWER TRANSISTORS CD H FOR POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS C < r *o r m m w 150 V Min V BR CEO -M 8-A Rated Continuous Collector Current ll o 50 Watts at 100°C Case Temperature od r- -o Min fy of 40 MHz at 5 V , 1 A

2N1724A

Abstract: 2N1722A
Contextual Info: TYPES 2N1722A, 2N1724A N-P-N TRIPLE-DIFFUSED MESA SILICON TRANSISTORS • 50 Watts at 100°C Case Temperature • Maxim um rcs of 0.3 Ohm at 2 Amperes lc • Maxim um V fjE of 2 V o lts at 5 Amperes lc « in w • Minim um f f of 10 Megahertz S z 5 » CD H

D4001BC

Abstract: D4002BC 4001BC 92CS-24322 IC CD4002B
Contextual Info: A R R C D 4001B , C D 4002B , CD 4 0 25 B Types IS CMOS NOR Gates Features: • Propagation delay time = 60 ns typ. at C|_ = 5 0 p F , V d d = 1 0 V ■ Buffered inputs and outputs ■ Standardized symmetrical output characteristics ■ 100% tested for maximum quiescent current at 20 V

2N698

Abstract: cd 4011 be 2n657 to39 2N1990
Contextual Info: JEDEC TRANSISTORS continued @ > 'S u u > u <J > a LLl 1< _E c Ë Ul u_ _c 60 100 (40) (40) 30/90 30/90 20/60 40/120 200 200 150 150 60 20/60 40/120 40/120 40/120 40/120 150 150 150 150 150 150 150 150 10 30 X CD u. > < j= _o CL X eg E </> UJ o > X CO S o

2N3930

Abstract: 2N4033
Contextual Info: continued >cc <—1 oa . w JJ aLU 1— <a: <3 X to -Ü E < E _o UJ _clL > X CU E A3 UJ o > U_ a. X <o E o n o0 (continued) o0 ID CM II I@ 5 PACKAGE TYPE General purpose amplifiers and switches fT min (MHz) JEDEC TRANSISTORS E a.ü 2N 3251 PNP 40 100/300

cd 1691 cp

Abstract: cp 8888 sj 6344 cP8888 nt 9989 1691 AI bt 67600
Contextual Info: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE686 SERIES FEATURES_ • HIGH GAIN BANDWIDTH PRODUCT: fT of 15 GHz • LOW VOLTAGE/LOW CURRENT OPERATION • HIGH INSERTION POWER GAIN: |S21E|2 = 12 dB @ 2 V, 7 mA, 2 GHz |S21E|Z = 11 dB @ 1 V, 5 mA, 2 GHz

Contextual Info: RP132x SERIES Low on Resistance / Low Voltage 1A LDO NO.EA-265-130605 OUTLINE The RP132x Series are voltage-regulators with a built-in low ON-resistance transistor and output current is 1A capability. These ICs have two versions: fixed output voltage type and externally adjustable output voltage type.

T2907A

Abstract: cd 100 transistor
Contextual Info: Central C X T2907A TM Sem i c o n d u c t o r C o r p . PNP SILICON TRANSISTOR DESCRIPTION: The C ENTRAL S EM IC O N D U C TO R CXT2907A type is an PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package,

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2515 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE D IM E N SIO N S The 2SK2515 is N-Channel MOS Field E ffe c tT ra n s is to rd e s ig n e d in m illim eter fo r high c u rre n t s w itc h in g a p p lica tio n s.

BC113

Contextual Info: CONSUMER TRANSISTORS continued < _§ X CD E u > > CD O a. """a) o ’ o o n o @ Li. a. >• UJ ll.c PACKAGE P O L A R ITY DESCRIPTION (A )0 3 3 A TYPE High voltage amplifiers o in CM II ro 1@ < j= _u 5 a a. BC 300 NPN Audio driver 80 120 1000 (10) 140 5

vqe 13

Abstract: APT75GL60BN BAVP VQE13
Contextual Info: A D VA NC E D POWER TECHNOLOGY b lE D • □ 2 5 7 T D CI □ □ □ □ a S f l ■R FM 244 BAVP ADVANCED P ow er Techno lo g y * APT75GL60BN 600V 75A POWER MQS IV IG B T N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR

OF IC 741

Abstract: 741p operation of ic 741 of 741 ic uA 741 IC IC 741 IC ua 74 IC 741 to high current Darlington pair IC 2SB1063
Contextual Info: Power Transistors 2SD1499 2S D 1499 Silicon PNP Triple-Diffused Planar Darlington Type High Power A m plifier C om plem entary Pair w ith 2SB1063 • Package D im ensions U n it I mm 4.4m ax. 1 0 .2 m a x . ■ Features 2.9m ax • V ery goo d lin earity o f DC c u r re n t gain hhE

T2907A

Abstract: marking AI sot23 JJ SOT23
Contextual Info: TM C e n t r a l Sem i c o n d u c t o r C o r p . C M P T2907A PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL S E M IC O N D U C T O R CMPT2907A type is an PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package,

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2498 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION 2SK2498 is N-Channel MOS Field Effect T ra n s is to r designed fo r PACKAGE DIMENSIONS in millimeter high c u rre n t s w itc h in g a p p lica tio n s.

Contextual Info: SEM ICONDUCTOR KTX211E TE CHNICAL DATA EPITAXIAL PLANAR PNP/NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES • Including two devices in TES6. DIM M ILLIM ETER S A l.6± 0.05 • With Built-in bias resistors.

D10271

Abstract: TO-220-AP
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2479 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE D E S C R IP TIO N T he 2SK2479 is N -C hannel M O S Field E ffect T ra n s is to r d e ­ PACKAGE D IM E N S IO N S in m illim e te rs sig n e d fo r h ig h v o lta g e s w itc h in g a p p lic a tio n s .