CC8 TRANSISTOR Search Results
CC8 TRANSISTOR Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| 2SC6026MFV | Toshiba Electronic Devices & Storage Corporation | NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 | Datasheet | ||
| TTC5886A | Toshiba Electronic Devices & Storage Corporation | NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold | Datasheet | ||
| TTA2097 | Toshiba Electronic Devices & Storage Corporation | PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold | Datasheet | ||
| TTA011 | Toshiba Electronic Devices & Storage Corporation | PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / PW-Mini | Datasheet | ||
| TPCP8513 | Toshiba Electronic Devices & Storage Corporation | NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PS-8 | Datasheet |
CC8 TRANSISTOR Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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cc8 transistor
Abstract: 2D TRANSISTOR sot-23 MARKING CODE 2d
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kst92/93ot-23kst92kst93+5 | |
cc8 transistor
Abstract: CMLDM8005
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cmldm8005350mwot-563cmldm7005+2 | |
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Contextual Info: CMLDM8005 SURFACE MOUNT DUAL P-CHANNEL ENHANCEMENT-MODE SILICON MOSFETS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM8005 consists of Dual P-Channel Enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier |
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cmldm8005350mwot-563200ma | |
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Contextual Info: CMLDM8005 SURFACE MOUNT SILICON DUAL P-CHANNEL ENHANCEMENT-MODE MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM8005 consists of dual P-Channel enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier |
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cmldm8005350mwot-563200ma | |
CMLDM8005Contextual Info: CMLDM8005 SURFACE MOUNT DUAL P-CHANNEL ENHANCEMENT-MODE SILICON MOSFETS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM8005 consists of Dual P-Channel Enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier |
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cmldm8005350mwot-563cmldm7005+1 | |
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Contextual Info: CMLDM8005 SURFACE MOUNT SILICON DUAL P-CHANNEL ENHANCEMENT-MODE MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM8005 consists of dual P-Channel enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier |
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cmldm8005350mwot-563200ma | |
c2259
Abstract: w188 N2905
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fl23sbos62702-f91235bgssa-1250+3 | |
951 a05
Abstract: 2907 2n2906 103MA a 2907 s170 2N2906A 2N2907A Q62702-F408 Q62702-S170
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fl53sbos-2n2907aq62702-f408q62702-s170+9 | |
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Contextual Info: ESC D • fi53SbOS 0004^01 b « S I E G PNP Silicon Planar Transistors SIEMENS AKTIENGESELLSCHAF " ^ 2 N 2906 A 3 1 ^7 - 2 N 2907 A 2 N 2 9 0 6 A and 2 N 2 9 0 7 A are epitaxial P N P silicon planar transistors in T O 18 case 18 A 3 DIN 4 1 8 7 6 . T h e co lle cto r is electrically con n ected to th e case. T h e transistors are |
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fi53sbos103ma | |
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Contextual Info: AT-41485 Up to 6 GHz Low Noise Silicon Bipolar Transistor What H E W L E T T mLfim P A C K A R D 85 Plastic Package Features • • • • Low Noise Figure: 1.4 dB typical at 1.0 GHz 1.7 dB typical at 2.0 GHz High Associated Gain: 18.5 dB typical at 1.0 GHz |
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at-41485ion-implantatio20 | |
Inside Secure
Abstract: smart card reader writer
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tpr0508aat83c2625mar11inside secure+1 | |
k 942
Abstract: K942 N 2904 ic 2904 N2905 2904 d 2905 2N2904 2N2904A Q62702-F65
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q62702-f65q62702-f66c-30v103ma+12 | |
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Contextual Info: CA3127 HARRIS S E M I C O N D U C T O R High Frequency N-P-N Transistor Array March 1993 Features Description • Gain Bandwidth Product fT . >1GHz The CA3127* consists of five general purpose silicon n-p-n transistors on a common monolithic substrate. Each of the |
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ca3127500mhzta6206100mhz | |
AT83C26-RKTUL
Abstract: AT83C26 CKS41 AT83C24 CKS40 EMV2000 QFN48 VQFP48 automatic room power controller using scr SC527
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emv20007511bat83c26-rktulat83c26+7 | |
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AT83C26-RKTUL
Abstract: AT83C26 AT83C26 Application Note EMV2000 QFN48 VQFP48 cardin2 CDS12
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emv20007511dat83c26-rktulat83c26+5 | |
IC LA7837
Abstract: LA7837 la7837 pin out LA7837* pin voltages LA7838 la7837 vertical LA7837 functions colour tv circuit diagram LA 7838 la 7837
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la7837ic la7837la7837 pin outla7837* pin voltages+6 | |
647 transistor
Abstract: TA6206 cascode transistor array
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1a1197ca3127500mhz100mhz+3 | |
ctv circuit diagram
Abstract: STK792-110 DS442 2sa1209 equivalent projectors power supply diagram C2911S 2SC2911
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stk792-11022//f/16vf/35v100/j750v+11 | |
H11AA1 equivalent
Abstract: C2303 11AA2
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h11aa1h11aa3h11aa2h11aa4+7 | |
DS442
Abstract: 2sa1209 equivalent ctv circuit diagram ku vsat amplifier STK792-110 2SA1209 2SC2911 TR11 2SC2911 equivalent
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stk792-110ds4422sa1209 equivalentctv circuit diagram+5 | |
AT8XC5122D
Abstract: schematic diagram scart to usb dps 8000 AT89C5122D 80C51 AT83C5122 AT83C5123 AT83EC5122 AT85C5122 AT89C5122
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80c514202dat8xc5122dschematic diagram scart to usb+7 | |
AT89C5122D
Abstract: gsm coding in c for 8051 microcontroller VQFP64 at89C5122D-RDTUM THX 201 transistor WT4 transistor WT6 WT21 WT4 smd 80C51
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80c514202eat89c5122dgsm coding in c for 8051 microcontroller+7 | |
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Contextual Info: January 1990 Editan 3.1 FUJITSU DATA SHEET : MB81461-12/-15 26 2,144-BIT DUAL PORT DYNAMIC RANDOM ACCESS MEMORY 262,144 Bit Dual Port DRAM The Fujitsu MB81461 is a fully decoded, dynamic NMOS random access memory organized as 65,536 words by 4 bits dynamic RAM port and 256 words by 4 |
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mb81461-12/-15144-bitmb81461mb81464+3 | |
scr inverter schematic circuit
Abstract: at89C5122D-RDTUM AT89C5122D AT89C5122D-ALRUM WT4 smd AT89C5122D-RDRUM 4202F at89C5122D-ALTUM SCR 106 B AT83R5122
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80c514202fscr inverter schematic circuitat89c5122d-rdtum+7 | |