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    CC8 TRANSISTOR Search Results

    CC8 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Datasheet
    TTC5886A
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Datasheet
    TTA2097
    Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Datasheet
    TTA011
    Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / PW-Mini Datasheet
    TPCP8513
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PS-8 Datasheet

    CC8 TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    cc8 transistor

    Abstract: 2D TRANSISTOR sot-23 MARKING CODE 2d
    Contextual Info: KST92/93 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS T,=25°C Characteristic Symbol Collector Base Voltage Rating Unit -3 0 0 -2 0 0 V V -3 0 0 -2 0 0 -5 -5 0 0 350 150 V V V mA mW °C VCBO KST92 KST93 Collector-Emitter Voltage


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    kst92/93ot-23kst92kst93+5ksp92/93-200vcc8 transistor2d transistorsot-23 marking code 2d PDF

    cc8 transistor

    Abstract: CMLDM8005
    Contextual Info: CMLDM8005 SURFACE MOUNT DUAL P-CHANNEL ENHANCEMENT-MODE SILICON MOSFETS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM8005 consists of Dual P-Channel Enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier


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    cmldm8005350mwot-563cmldm7005+2200macc8 transistor PDF

    Contextual Info: CMLDM8005 SURFACE MOUNT DUAL P-CHANNEL ENHANCEMENT-MODE SILICON MOSFETS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM8005 consists of Dual P-Channel Enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier


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    cmldm8005350mwot-563200ma PDF

    Contextual Info: CMLDM8005 SURFACE MOUNT SILICON DUAL P-CHANNEL ENHANCEMENT-MODE MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM8005 consists of dual P-Channel enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier


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    cmldm8005350mwot-563200ma PDF

    CMLDM8005

    Contextual Info: CMLDM8005 SURFACE MOUNT DUAL P-CHANNEL ENHANCEMENT-MODE SILICON MOSFETS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM8005 consists of Dual P-Channel Enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier


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    cmldm8005350mwot-563cmldm7005+1200ma PDF

    Contextual Info: CMLDM8005 SURFACE MOUNT SILICON DUAL P-CHANNEL ENHANCEMENT-MODE MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM8005 consists of dual P-Channel enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier


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    cmldm8005350mwot-563200ma PDF

    c2259

    Abstract: w188 N2905
    Contextual Info: 2SC D • fl23SbOS QQOMÔ^q 2 ■ SIEû PNP Silicon Planar Transistors 2 N 290 4 A 2 N 2905 A SIEMENS AKTIEN6ESELLSCHAF 2 N 2 9 0 4 A and 2 N 2 9 0 5 A are epitaxial PNP silicon planar transistors in TO 3 9 case 5 C 3 DIN 41 87 3 . The collector is electrically connected to the case. The transistors are


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    fl23sbos62702-f91235bgssa-1250+3c2259w188n2905 PDF

    951 a05

    Abstract: 2907 2n2906 103MA a 2907 s170 2N2906A 2N2907A Q62702-F408 Q62702-S170
    Contextual Info: 2SC D • fi53SbOS 0 0 0 4 ^ 0 1 b « S I E G PNP Silicon Planar Transistors 2 N 2906 A SIEMENS AKTIENGESELLSCHAF - 2 N 2907 A 2 N 2 9 0 6 A and 2 N 2 9 0 7 A are epitaxial PNP silicon planar transistors in TO 18 case 18 A 3 DIN 4 1 8 7 6 . The collector is electrically connected to the case. The transistors are


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    fl53sbos-2n2907aq62702-f408q62702-s170+9023sbqs103ma951 a0529072n2906a 2907s1702n2906a2n2907a PDF

    Contextual Info: ESC D • fi53SbOS 0004^01 b « S I E G PNP Silicon Planar Transistors SIEMENS AKTIENGESELLSCHAF " ^ 2 N 2906 A 3 1 ^7 - 2 N 2907 A 2 N 2 9 0 6 A and 2 N 2 9 0 7 A are epitaxial P N P silicon planar transistors in T O 18 case 18 A 3 DIN 4 1 8 7 6 . T h e co lle cto r is electrically con n ected to th e case. T h e transistors are


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    fi53sbos103ma PDF

    Contextual Info: AT-41485 Up to 6 GHz Low Noise Silicon Bipolar Transistor What H E W L E T T mLfim P A C K A R D 85 Plastic Package Features • • • • Low Noise Figure: 1.4 dB typical at 1.0 GHz 1.7 dB typical at 2.0 GHz High Associated Gain: 18.5 dB typical at 1.0 GHz


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    at-41485ion-implantatio20 PDF

    Inside Secure

    Abstract: smart card reader writer
    Contextual Info: TPR0508A Technical Datasheet AT83C26 Multiple Smart Card Reader Interface With Power Management 2 TPR0508A – VIC – 25Mar11 AT83C26 Table of Contents 1 Features .5


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    tpr0508aat83c2625mar11inside secure+1smart card reader writer PDF

    k 942

    Abstract: K942 N 2904 ic 2904 N2905 2904 d 2905 2N2904 2N2904A Q62702-F65
    Contextual Info: 2SC ]> • 023SbOS 00040=52 'î H S I E 6 ‘ *7_ / " i/ * / 7 PNP Silicon Planar Transistors 2 N 2904 2 N 2905 - SIEMENS AKTIENGESELLSCHAF -2 N 2904 and 2 N 2905 are epitaxial PNP silicon planar transistors in TO 39 case 5 C 3 DIN 41873 . The collector is electrically connected to the case. The transistors are


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    q62702-f65q62702-f66c-30v103ma+12lfe-20053sbos-2n2904ak 942k942n 2904ic 2904n29052904 d29052n29042n2904a PDF

    Contextual Info: CA3127 HARRIS S E M I C O N D U C T O R High Frequency N-P-N Transistor Array March 1993 Features Description • Gain Bandwidth Product fT . >1GHz The CA3127* consists of five general purpose silicon n-p-n transistors on a common monolithic substrate. Each of the


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    ca3127500mhzta6206100mhz PDF

    AT83C26-RKTUL

    Abstract: AT83C26 CKS41 AT83C24 CKS40 EMV2000 QFN48 VQFP48 automatic room power controller using scr SC527
    Contextual Info: Features • 5 Smart Card Interfaces • • • • • • • • – Compliance with ISO 7816, EMV2000, GIE-CB and GSM Standards – Direct Connection to the Smart Cards Logic Level Shifters Short Circuit Current Limitation 4kV+ ESD Protection MIL/STD 883 Class 3


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    emv20007511bat83c26-rktulat83c26+7cks41at83c24cks40qfn48vqfp48automatic room power controller using scrsc527 PDF

    AT83C26-RKTUL

    Abstract: AT83C26 AT83C26 Application Note EMV2000 QFN48 VQFP48 cardin2 CDS12
    Contextual Info: Features • 5 Smart Card Interfaces • • • • • • • • – Compliance with ISO 7816, EMV2000, GIE-CB and GSM Standards – Direct Connection to the Smart Cards Logic Level Shifters Short Circuit Current Limitation 4kV+ ESD Protection MIL/STD 883 Class 3


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    emv20007511dat83c26-rktulat83c26+5at83c26 application noteqfn48vqfp48cardin2cds12 PDF

    IC LA7837

    Abstract: LA7837 la7837 pin out LA7837* pin voltages LA7838 la7837 vertical LA7837 functions colour tv circuit diagram LA 7838 la 7837
    Contextual Info: LA7837, 7838 Monolithic Linear 1C No.3313 S A w Vertical Deflection Output Circuit with TV and Display Drive Circuit ro . i The LA7837 7838 are vertical deflection output ICs developed for use in high-grade TVs and displays. The interlace and crossover distortion responses, in particular, have been greatly improved, allowing


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    647 transistor

    Abstract: TA6206 cascode transistor array
    Contextual Info: H A RR IS S E M I C O N D S E C T O R ¡SjHARRIS blE D • 4 3 02 27 1 0 0 4 7 0 H b b46 « H A S 1A1197 Æ U S E M I C O N D U C T O R High Frequency N-P-N Transistor Array March 1993 Features • Gain Bandwidth Product (fT Description .>1GHz


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    1a1197ca3127500mhz100mhz+3647 transistorta6206cascode transistor array PDF

    ctv circuit diagram

    Abstract: STK792-110 DS442 2sa1209 equivalent projectors power supply diagram C2911S 2SC2911
    Contextual Info: Ordering number: EN 5017 | Thick Film Hybrid IC STK792-110 Vertical Deflection Output Circuit for CTV and CRT Displays Overview Package Dimensions The S T K 792-110 is a vertical output am plifier and supply sw itching circuit hybrid IC for high withstand voltage,


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    stk792-11022//f/16vf/35v100/j750v+110022/jf1000/if/35v22//f/160vf/160vf/50vctv circuit diagramds4422sa1209 equivalentprojectors power supply diagramc2911s2sc2911 PDF

    H11AA1 equivalent

    Abstract: C2303 11AA2
    Contextual Info: QUALITY TECHNOLOGIES AC INPUT/PHOTOTRANSISTOR OPTOCOUPLERS 1 9 H11AA1 H11AA3 H11AA2 H11AA4 The H11AAX family of devices has two GaAs emitters connected in inverse parallel driving a single silicon phototransistor output. T~ 6.86 6.35 o i _ 8.89 Bi-polar emitter input


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    h11aa1h11aa3h11aa2h11aa4+7h11aaxc2090c2089c2303c2309h11aa1 equivalent11aa2 PDF

    DS442

    Abstract: 2sa1209 equivalent ctv circuit diagram ku vsat amplifier STK792-110 2SA1209 2SC2911 TR11 2SC2911 equivalent
    Contextual Info: Ordering number: EN 5017 Thick Film Hybrid IC STK792-110 No. 5017 Vertical Deflection Output Circuit for CTV and CRT Displays Overview Package D im ensions The STK792-110 is a vertical output amplifier and supply switching circuit hybrid IC for high withstand voltage,


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    stk792-110ds4422sa1209 equivalentctv circuit diagram+5ku vsat amplifier2sa12092sc2911tr112sc2911 equivalent PDF

    AT8XC5122D

    Abstract: schematic diagram scart to usb dps 8000 AT89C5122D 80C51 AT83C5122 AT83C5123 AT83EC5122 AT85C5122 AT89C5122
    Contextual Info: Features • Clock Controller • • • • • • • • • • • • – 80C51 core with 6 clocks per instruction – 8 MHz On-Chip Oscillator – PLL for generating clock to supply CPU core, USB and Smart Card Interfaces – Programmable CPU clock from 500 KHz / X1 to 48 MHz / X1


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    80c514202dat8xc5122dschematic diagram scart to usb+7dps 8000at89c5122dat83c5122at83c5123at83ec5122at85c5122at89c5122 PDF

    AT89C5122D

    Abstract: gsm coding in c for 8051 microcontroller VQFP64 at89C5122D-RDTUM THX 201 transistor WT4 transistor WT6 WT21 WT4 smd 80C51
    Contextual Info: Features • Clock Controller • • • • • • • • • • • • – 80C51 core with 6 clocks per instruction – 8 MHz On-Chip Oscillator – PLL for generating clock to supply CPU core, USB and Smart Card Interfaces – Programmable CPU clock from 500 KHz / X1 to 48 MHz / X1


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    80c514202eat89c5122dgsm coding in c for 8051 microcontroller+7vqfp64at89c5122d-rdtumthx 201transistor wt4transistor wt6wt21wt4 smd PDF

    Contextual Info: January 1990 Editan 3.1 FUJITSU DATA SHEET : MB81461-12/-15 26 2,144-BIT DUAL PORT DYNAMIC RANDOM ACCESS MEMORY 262,144 Bit Dual Port DRAM The Fujitsu MB81461 is a fully decoded, dynamic NMOS random access memory organized as 65,536 words by 4 bits dynamic RAM port and 256 words by 4


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    mb81461-12/-15144-bitmb81461mb81464+3256-bitmb81461-12mb81461-15 PDF

    scr inverter schematic circuit

    Abstract: at89C5122D-RDTUM AT89C5122D AT89C5122D-ALRUM WT4 smd AT89C5122D-RDRUM 4202F at89C5122D-ALTUM SCR 106 B AT83R5122
    Contextual Info: Features • Clock Controller • • • • • • • • • • • • – 80C51 core with 6 clocks per instruction – 8 MHz On-Chip Oscillator – PLL for generating clock to supply CPU core, USB and Smart Card Interfaces – Programmable CPU clock from 500 KHz / X1 to 48 MHz / X1


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    80c514202fscr inverter schematic circuitat89c5122d-rdtum+7at89c5122dat89c5122d-alrumwt4 smdat89c5122d-rdrumat89c5122d-altumscr 106 bat83r5122 PDF