CB7 TRANSISTOR Search Results

npn transistor wc

Abstract: 2N1990 transistor wc cb7 transistor VCB0-100V transistor wc TO39 silicium power transistor 2N 1990 transistor 2n
Contextual Info: 2N 1990 NPN SILICON TRANSISTOR, PLANAR T R A N S IS T O R N P N S IL IC IU M , P L A N A R - Low current switching C o m m u ta tio n fa ib le co u ra n t - Nixie driver Com m ande des tubes " n ix ie s " v CBO 100 V ^21 25 Maximum power dissipation Case TO-39

transistor 152 M

Contextual Info: 2N1986 NPN SILICON TRANSISTOR, EPITAXIAL PLANAR TRANSISTOR NPN SILIC IU M , PLAN A R E P ITAXIAL - LF amplification A m plification BF - Switching Commutation v CBO 50V h21E 150m A 60 - 240 V CEsat (30 mA/3 mA) 0,6 V max. Maximum power dissipation Case TO-39 — See outline drawing CB-7 on last pages

2N3137

Abstract: pbgi 2n 3137 CE020
Contextual Info: 2N 3137 NPN SILICON TRANSISTOR, EPITAXIAL PLANAR TRANSISTOR NPN S IL IC IU M . PLAN A R E P IT A X IA L Class-CVH F Power amplifier to 250 MHz A m plifica te u r de puissance VHF en classe - C jusquà 250 MHz v CEO 20 V fT 500 MHz min '’ out 400 mW min.

2N699

Abstract: H12B coutant
Contextual Info: 2N699 NPN SILICON TRANSISTOR, EPITAXIAL PLANAR TRANSISTOR NPN SILIC IU M , PLA N A R E P IT A X IA L - LF amplification A m p lifica tio n BF 80 V V CER - Switching Commutation ^21E niA 50 MHz fT Case TO-39 Maximum power dissipation min. — See outline drswing CB-7 on last pages

2N697

Abstract: 2N696 bf 697 transistor BF 697 BF 696 OC 696 2n 697 FT2N
Contextual Info: NPN S ILIC O N TR A N S IS TO R S , E P IT A X IA L P LA N A R TRANSISTORS NPN SILICIUM PLANAR EPITAXIAUX , LF amplification Amplification BF 40 V V CER Switching Commutation ^21E fT Maximum power dissipation Dissipa tion de puissance maximale iti A 12 0 - 6 0

K 3053 TRANSISTOR

Abstract: K 3053
Contextual Info: 2N 3053 NPN SILICON TRANSISTOR, EPITAXIAL PLANAR TRANSISTOR NPN SILIC IU M , PLANAR EPITAXIAL General purpose : medium power amplification, commutation Usage généra! : am plificateur moyenne puissance, commutation. V CEO 40 V 'c 0,7 A Ptot 5 W Rth j-c 35°C/W

BFT47

Abstract: BFT49 BFT48
Contextual Info: BFT47 BFT48 BFT49 NPN SILICON TRANSISTORS, EPITAXIAL PLANAR T R A N S IS T O R S N P N S IL IC IU M , P L A N A R E P IT A X IA U X The NPN planar epitaxial transistors BF 257, BF 258 and BF 259 are intended for use in chrominance out­ put stages and luminance output stage of colour tele*

2N698

Abstract: transistor BF 698 2n 698 H22B
Contextual Info: 2N 698 NPN SILICON TRANSISTOR, EPITAXIAL PLANAR TR A N S IS T O R N P N S IL IC IU M , P L A N A R E P IT A X IA L - LF amplification A m plification B F - Switching Commutation VCEO 60 V I121 E 150 mA 2 0 -6 0 h 40 MHz Maximum power dissipation Casa TO-39

BC211

Abstract: TR BC BC211A BC313A bc 313 iriver BC313 h21e deflexion NPN pnp MATCHED PAIRS
Contextual Info: *B C 211 BC 211 A NPN SILICON TRANSISTORS, PLANAR TRANSISTORS NPN SILICIUM, PLANAR H5 Preferred device Dispositif recommandé The BC 211 and BC 211 A are intended for a iride variety of medium power medium speed witching and AF amplifier application ; they

BF179

Abstract: bf 179 BF179C vt120
Contextual Info: B F 179 C NPN S IL IC O N T R A N S IS T O R S , P L A N A R TRANSISTORS NPN S ILIC IU M , PLANAR - W ide-band, high voltage a m p lific a tio n A m p lifica tio n haute tension à large bande VCER 250 V fT 120 MHz Typ. c 12e 1,8 pF M axim um po w e r dissipation

transistor BF 257

Abstract: bf259 BF257 ltls BF258 signaux BF 259 C22E BF 258
Contextual Info: BF 257 BF 258 *BF 259 N PN S IL IC O N T R A N S IS T O R S , E P IT A X IA L P L A N A R TRANSISTORS NPN S ILIC IU M , P LAN A R E P IT A X IA U X ^ Preferred device Dispositif recommandé The NPN planar epitaxial transistors BF 257, BF 258 and BF 259 are intended fo r use in chrominance out*

2N2891

Abstract: 2N2890 C22B
Contextual Info: 2N 2890 2N 2891 NPN SILICON TRANSISTORS, EPITAXIAL PLANAR TRANSISTORS NPN SILIC IU M , PLANAR E P ITAXIAU X - LF large signal amplification high voltage A m plification B F grands signaux (haute tension) • Switching up to 1 A 80 V v CEO h21E(1A) \J 30 - 90

2N2243

Abstract: h21E 2243A U25c 2243 1/loctite 2243
Contextual Info: 2N 2243,A NPN SILICON TRANSISTOR, EPITAXIAL PLANAR TRANSISTOR NPN S IL IC IU M , PLA N A R E P IT A X IA L - H F amplification A m plifica tio n HF - Switching Commutation v CBO 120 V h 21E ^^0 mA 40 -12 0 v CEsat 150 mA/15 mA) 0,25 V max 2N 2243 A 0,35 V max 2N 2243

2N1132

Abstract: 2N1131 1132 2n 1131 H12B 1131
Contextual Info: 2N1131 2N1132 PNP SILICON TRANSISTORS, PLANAR T R A N S IS T O R S PNP S IL IC IU M , P L A N A R - General use Usage général - Small signal LF amplification -3 5 V v CEO A m p lific a tio n B F p e tits signaux h jiE 150 mA| Case TO-39 B o îtie r ABSOLUTE RATINGS (LIM ITIN G VALUES

Contextual Info: 2N 2868 NPN SILICON TRANSISTOR, EPITAXIAL PLANAR T R A N S IS T O R N P N S IL I C I U M , P L A N A R E P I T A X IA L • High current switching Comm utation fo rt niveau V CEO 40 V 'c 1A h21E^^0 mA 4 0 -1 1 0 V CEsat 150/15m A ) 0,25 V Maximum power dissipation

2N 2905a pnp transistor

Abstract: 2904 st 2904 2N2905 2905 transistor CI 2904 2905a 2N2905A 2905 2N2904A
Contextual Info: PNP SILICON TRANSISTOR, EPITAXIAL PLANAR TRANSISTOR PNP S ILIC IU M , PLAN A R E P ITAXIAL * 2 N 2 9 0 5 , A Compì, of 2N 2218, A and 2N 2219, A ïfc Preferred device D is p o s itif recommandé • LF or HF amplification A m p lifica tio n BF ou H F v CEO

BUX49

Abstract: transistor BUx 49 AH-21
Contextual Info: BUX 49 N P N S I L I C O N T R A N S IS T O R , T R IP L E D IF F U S E D M E S A T R A N S IS TO R NPN S IL IC IU M , M ESA T R IP L E D IF F U S E T E N T A T IV E D A T A N O T IC E P R O V IS O IR E D river stage fo r high voltage pow er transistor Etage p ilo te p o u r tran sistor de puissance

passive rfid sensor diagram

Abstract: mcrf202 CB10 microchip inverter application notes MH330 signal reader
Contextual Info: MCRF202 Passive RFID Device with Sensor Input FEATURES • Sensor input polarity inverts data stream • Read only data transmission • 96- or 128-bits of factory programming user memory also supports 48 and 64-bit protocols • Typical operates at 125 kHz

cb4 contactless

Abstract: CB10 MCRF250 passive rfid tag circuit diagram contactless ac voltage detector
Contextual Info: M MCRF250 Contactless Programmable Passive RFID Device With Anti-Collision FEATURES APPLICATION • Anti-collision feature to resolve multiple tags in the same RF field • Read-only data transmission • 96 or 128 bits of One-Time Programmable OTP user memory (also supports 48 and 64-bit

contactless ac voltage detector

Contextual Info: MCRF250 Contactless Programmable Passive RFID Device With Anti-Collision FEATURES APPLICATION • Anti-collision feature to resolve multiple tags in the same RF field • Read-only data transmission • 96 or 128 bits of One-Time Programmable OTP user memory (also supports 48 and 64-bit

LTLS

Abstract: 2n2891 2N 3055 BDX 78 2N5415 2N5416 BDY71 2n3738 2n3055 2n3053
Contextual Info: metal power transistors O transistors de puissance métalliques Type v CEO •c h21E P to t ! Ic THOMSON-CSF VCE sat cont NPN min PNP (V) (A) / Ib max m ax (Al (W) 11 (V) (A) (A) td + tr ts tf typ * ty p * max m ax m ax M> (us) ip*) s w itc llin g tran sisto rs

Biphase

Abstract: MCRF250 cb4 contactless CB6 package W40A CB10 125 kHz RFID passive tags microid
Contextual Info: MCRF250 Contactless Programmable Passive RFID Device With Anti-Collision FEATURES APPLICATION • Anti-collision feature to resolve multiple tags in the same RF field • Read-only data transmission • 96 or 128 bits of One-Time Programmable OTP user memory (also supports 48 and 64-bit

2N2219

Abstract: 2N2218 2N2219A 2N2218A 2219a 2n22191 F2N2219 2n 2219 NPN 2N 2219 2218A
Contextual Info: NPN SILICON TRANSISTORS, EPITAXIAL PLANAR *2 N T R A N S IS T O R S N P N S IL IC IU M , P L A N A R E P IT A X IA U X 2 2 1 9 ’A Compì, of 2N 2904, A - 2905, A Preferred device D isp o sitif recommandé - LF or HF small or large signal amplification A m p lific a tio n B F o u H F p e tits ou grands signaux

C22B

Abstract: BLW27 transistors for oscillators ic 9033 ICB-287 CB-3071 CB-295 TH9023 Cb28
Contextual Info: 0.75. 4.2 G H z microwave transistors for class C operation transistors hyperfréquences, classe C TYPE TH 1002 TH 1005 TH 1010 TH 2001 TH 2003 TH 2005 TH 2302 TH 2304 TH 2307 TH 3000 TH 3001 TH 3003 TH 3005 TH 4200 TH 4201 2 IM 4428 2N 4429 2N 4430 2N 4431