CASE BD901 Search Results

B0897

Abstract: D895 BD901 case BD901
Contextual Info: BD895, BD897, BD899, BD901 NPN SILICON POWER DARLINGTONS Copyright t> 1997. Power Innovations Limited. UK_ • Designed for Complementary Use with BD896, B0898, BD900 and BD902 • 70 W at 2S°C Case Temperature • 8 A Continuous Collector Current •

BD901

Abstract: transistor BD901 BD897 BD898 BD899 BD900 BD902 BD895 BD896
Contextual Info: BD896, BD898, BD900, BD902 PNP SILICON POWER DARLINGTONS Copyright 1997, Power Innovations Limited, UK ● AUGUST 1993 - REVISED MARCH 1997 Designed for Complementary Use with BD895, BD897, BD899 and BD901 TO-220 PACKAGE TOP VIEW ● 70 W at 25°C Case Temperature

transistor BD901

Abstract: BD901 BD897 case BD901 BD895 BD896 BD898 BD899 BD900 BD902
Contextual Info: BD895, BD897, BD899, BD901 NPN SILICON POWER DARLINGTONS Copyright 1997, Power Innovations Limited, UK ● AUGUST 1993 - REVISED MARCH 1997 Designed for Complementary Use with BD896, BD898, BD900 and BD902 TO-220 PACKAGE TOP VIEW ● 70 W at 25°C Case Temperature

transistor BD901

Abstract: BD897 BD901 BD895 BD896 BD898 BD899 BD900 BD902 case BD901
Contextual Info: BD895, BD897, BD899, BD901 NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD896, BD898, BD900 and BD902 ● 70 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3A TO-220 PACKAGE TOP VIEW

BD902

Abstract: BD901 BD895 BD896 BD897 BD898 BD899 BD900
Contextual Info: BD896, BD898, BD900, BD902 PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD895, BD897, BD899 and BD901 ● 70 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3A TO-220 PACKAGE TOP VIEW

Contextual Info: BD896, BD898, BD900, BD902 PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD895, BD897, BD899 and BD901 ● 70 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3A This series is currently available, but

Contextual Info: BD895, BD897, BD899, BD901 NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD896, BD898, BD900 and BD902 ● 70 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3A This series is currently available, but

BD901

Abstract: BD895 BD896 BD897 BD898 BD899 BD900 BD902
Contextual Info: BD896, BD898, BD900, BD902 PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD895, BD897, BD899 and BD901 ● 70 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3A TO-220 PACKAGE TOP VIEW

7508A

Contextual Info: BD895, BD897, BD899, BD901 NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD896, BD898, BD900 and BD902 ● 70 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3A This series is obsolete and

Contextual Info: BD896, BD898, BD900, BD902 PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD895, BD897, BD899 and BD901 ● 70 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3A This series is obsolete and

Contextual Info: BD896, BD898, BD900, BD902 PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD895, BD897, BD899 and BD901 ● 70 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3A TO-220 PACKAGE TOP VIEW

transistor BD901

Abstract: BD901 7508A BD897 BD899 BD895 BD896 BD898 BD900 BD902
Contextual Info: BD895, BD897, BD899, BD901 NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD896, BD898, BD900 and BD902 ● 70 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3A TO-220 PACKAGE TOP VIEW

B0898

Abstract: BD901 BD895 BD896 BD897 BD898 BD899 BD900 BD902
Contextual Info: c ï 8AN SYS BD896, BD898, BD900, BD902 PNP SILICON POWER DARLINGTONS IUCTROMICS LIMITED TO-220 PACKAGE TOP VIEW Designed for Complementary Use with BD895, BD897, BD899 and BD901 o B C 70 W at 25°C Case Temperature C C 8 A Continuous Collector Current E C

transistor BD901

Abstract: BD901 bd897
Contextual Info: BD895, BD897, BD899, BD901 NPN SILICON POWER DARLINGTONS C o p y rig h t 1997, Power Innovations Limited, UK • AUG UST 1993 - REVISED MARCH 1997 Designed for Complementary Use with BD896, BD898, BD900 and BD902 TO-220 PACKAGE TOP VIEW • 70 W at 25°C Case Temperature

D895

Abstract: BD 895 bdw 34 a
Contextual Info: b5 TEXAS INSTR -COPTO* DeT | ST b lT H b DDBbS^'ì 62C 3 6 5 9 9 8961726 TEXAS INSTR <OPTO> BD895, BD895A,BD897, BD897A, BD899, BD899A, BD901 N-P-N SILICON POWER DARLINGTONS REVISED OCTOBER 1 9 8 4 T-33-29 • 70 W a t 2 5 °C Case Temperature • 8 A Continuous Collector Current

BD901

Abstract: BD897 case BD901 1N914 BD895 BD895A BD897A BD899 BD899A D03bt
Contextual Info: TEXAS I N S T R -COPTO* b5 D eT | ODBbS'i'i 62C 36599 8961726 TEXAS INSTR <OPTO> BD895, BD895A,BD897, BD897A, BD899, BD899A, BD901 N-P-N SILICON POWER DARLINGTONS R E V IS E D O C TO B E R 1 9 8 4 • 70 W at 2 5 °C Case Temperature T -3 3 -2 9 • 8 A Continuous Collector Current

BOX53C

Abstract: box54c BOX33C box53b transistor box54c box53a box54 box53 box34c b0808
Contextual Info: POWER TRANSISTORS — BIPOLAR PLASTIC continued TO-220AB Package (continued) R esistive Sw itching lcCont V c E O (sus) Amps Max Volts Min 8 Device Type NPN PNP M in/M ax @ lc Am p ts t, US US Max Max fT @ lc Am p PD (Case) MHZ Watts Min @ 25°C 40 2N6386

diode D45C

Abstract: JE 800 transistor L146 IC BD800
Contextual Info: STYLE 1: PIN 1. BASE 2. COLLECTOR CASE 340B-03 R e s is tiv e S w itc h in g Ic C o n t Am ps V C E O s u s V o lts M ax M in 8 500 700 f*FE M in /M a x @ lc |XS tf ps Amp M ax M ax M JF16006A 5 min 8 2.5 0.25 5 B U 1008A F 3 min 3 min 4.5 4.5 8* 8* 0.5*

D900B

Abstract: B0896 BD696
Contextual Info: BD896, BD898, BD900, BD902 PNP SILICON POWER OARLINGTONS Copyright 1997, Power timoyatlons lim ited, U K _ AUGUST 1993 - REVISED M ARCH 1997 • Designed for Complementary Use with BD895, BDB97, BD899 and BD901 •

case BD901

Abstract: BD901 BD895 BD899
Contextual Info: BD895, BD895A, BD897, BD897A, BD899, BD899A, BD901 File Number 1240 8-Ampere N-P-N Darlington Power Transistors 45-60-80-100-Volts, 70 Watts TERMINAL DESIGNATIONS Gain of 750 at 4 A BD895A, BD897A, BD899A Gain of 750 at 3 A (BD895, BD897, BD899, BD901) Features:

BD901

Abstract: case BD901 BD899 BD645
Contextual Info: File Number 1240 BD895, BD895A, BD897, BD897A, BD899, BD899A, BD901 HARR IS SENICON] S E CT OR SbE D 8-Ampere N-P-N Darlington Power Transistors • 43 02 271 GDMDtifiS 230 IHAS 45-60-80-100-Volts, 70 Watts TERMINAL DESIGNATIONS Gain of 750 at 4 A BD895A, BD897A, BD899A)

Contextual Info: Datasheet Switching Regulator with external FET 3.9 to 30V, 2ch Synchronous Rectification Step-Down Controller BD9015KV-M BD9016KV-M General Description Key Specifications „ „ „ „ „ „ The BD9015KV-M and BD9016KV-M are high performance synchronous rectification switching controllers

3225 diode

Contextual Info: Datasheet Switching Regulator with external FET 3.9 to 30V, 2ch Synchronous Rectification Step-Down Controller BD9015KV-M BD9016KV-M General Description Key Specifications „ „ „ „ „ „ The BD9015KV-M and BD9016KV-M are high performance synchronous rectification switching controllers

D895

Abstract: transistor Bd 699 transistor BD901 BD695A BD895 BD897A D-897 bd897 motorola
Contextual Info: MOTORCLA sc XSTRS/R F lE E D I b3b?254 GGfl47bS T | BD895, BD895A BD897, BD897A BD899, BD899A BD901 MOTOROLA SEMICONDUCTOR TECHNICAL DATA PLASTIC POWER SILICON NPN DARLINGTONS DARLINGTON 8 AMPERE NPN SILICON POWER TRANSISTORS . for use as output devices in complementary general-purpose