CAPACITOR JL 100N Search Results

transistor 9232

Contextual Info: A ti« O M w a n A M P com pany Radar Pulsed Power Transistor, 10W, 100ns Pulse, 10% Duty 3.1-3.4 GHZ PH3134-10M Features • • • • • • • • b/y :14 4B> NPN Silicon M icrow ave Pow er T ran sisto r C o m m o n Base C onfig u ratio n B ro a d b an d Class C O p e ra tio n

icl7106a

Abstract: AN046
Contextual Info: ICL7126 HARRIS S E M I C O N D U C T O R 3 1/2 Digit, Low Power, Single-Chip A/D Converter January 1998 Description Features 8,000 Hours Typical 9V Battery Life The ICL7126 is a high performance, very low power 3 1 / 2 -digit, A/D converter. All the necessary active devices

Contextual Info: ICL7126 HARRIS S E M I C O N D U C T O R 31/2 Digit, Low Power, Single-Chip A/D Converter August 1997 Features Description • 8,000 Hours Typical 9V Battery Life The ICL7126 is a high performance, very low power 3 1/2-digit, A/D converter. All the necessary active devices

icl7107 thermometer digital

Abstract: controlling with icl7116
Contextual Info: ICL7116, ICL7117 & MAB , 31/2 Digit, LCD/LED Display, January 1998 A/D C onverter w ith Display Hold Features Description • HOLD Reading Input Allows Indefinite Display Hold The Harris ICL7116 and ICL7117 are high performance, low power, 3 V 2 digit, A/D converters. Included are seven segment

ES 5106 V

Contextual Info: Multi-Function, Synchronous plus Auxiliary PWM Controller The CS-5106 is a fixed frequency, current mode controller with one single NFET driver and one dual FET, synchronous driver. The syn­ chronous driver allows for increased efficiency of the main iso­

VGN11646

Abstract: 7361 afnor SN 20-C-70 7361Z0001S13 7361Z0001S14 GS-22-008 VJW550I
Contextual Info: 1 GENERAL 7361Z0001SxxLF — 8 1 i r Lead Free C u s + o me r Version T h is Smart Card Reader uses a sLiding contact technology. I t h a s b e e n d e s i g n e d t o r e a s y m o u n t i n g on m e t a l p a n e l . Optional S p e c ific ity EE DE TAI L

27C 0626

Contextual Info: £ÿj SGS-THOMSON D ii©l[LI ê,in^@lü!lD(gi M 27W 160 16 Mbit (x8/x16 Low Voltage OTP EPROM • LOW VOLTAGE READ OPERATION: 2.7V to 3.6V ■ FAST ACCESS TIME: - 100ns at Vcc = 3.0V to 3.6V - 120ns at Vcc = 2.7V to 3.6V ■ BYTE-WIDE or WORD-WIDE CONFIGURABLE

Contextual Info: IC L 7 1 1 6 , IC L 7 1 1 7 h a r r i s S E M I C O N D U C T O R " mm " " " } " " " * " 3 1/2 Digit, LCD/LED Display, A/D Converter with Display Hold August 1997 Features Description • HOLD Reading Input Allows Indefinite Display Hold The Harris ICL7116 and ICL7117 are high performance, low

Contextual Info: February 1997 PRELIMINARY 3 ^ Micro Linear ML6424/ML6425 CCIR601 Video Lowpass Filter with Optional Sinx/x Correction GENERAL DESCRIPTION FEATURES The ML6424 is a monolithic BiCMOS Video Lowpass Filter IC, incorporating a 5th order Elliptic Cauer lowpass

SPA-1218

Contextual Info: Preliminary Product Description SPA-1218 Stanford Microdevices’ SPA-1218 is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial

SPA-1118

Abstract: ECB-101161
Contextual Info: Advanced Information Product Description SPA-1118 Stanford Microdevices’ SPA-1118 is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial

SPA-1218

Abstract: ECB-101161
Contextual Info: Advanced Information Product Description SPA-1218 Stanford Microdevices’ SPA-1218 is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial

TRANSISTOR 726

Abstract: SPA-1118
Contextual Info: Preliminary Product Description SPA-1118 Stanford Microdevices’ SPA-1118 is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial

Contextual Info: Product Description SPA-1118 Sirenza Microdevices’ SPA-1118 is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial

Contextual Info: Preliminary Product Description SPA-1118 Stanford Microdevices’ SPA-1118 is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial

Contextual Info: SHM-4860 l~ l A l l- 1 Industry-Standard, High-Speed ±0.01% Sample-Hold Amplifiers INNOVATION a n d EXCELLENCE FEATURES • • • • • • 200ns Maximum acquisition time ±0.01% Accuracy 100ns Maximum sample-hold settling time 74dB Feedthrough attenuation

Contextual Info: SD2 fí S u p ertex in c . CMOS Photo-Electric Smoke Detector Integrated Circuit General Description Ordering Information Device Package Order No. SD2 16-Pin Plastic SD2P SD2 SOW-20 SD2WG This low power CMOS circuit is intended for use in a pulsed LED/ silicon cell smoke detector system. It is designed for use in low

L64251

Contextual Info: February 1997 PRELIM INARY % M i c r o L in e a r ML6424/ML6425 CCIR601 Video Lowpass Filter with Optional Sinx/x Correction GENERAL DESCRIPTION FEATURES The M L6424 is a monolithic BiCM OS Video Lowpass Filter IC, incorporating a 5th order Elliptic Cauer lowpass

MCH18

Abstract: MCR03 SPA-1118 SPA-1118Z TAJB106K020R
Contextual Info: SPA-1118 Product Description Sirenza Microdevices’ SPA-1118 is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial

Contextual Info: 9* ^ I C L 7116, I C L 7 1 1 7 3 1/2 Digit, LCD/LED Display, January 1998 A/D C onverter w ith Display Hold Features Description • H O LD Reading Input Allows Indefinite Display Hold The Harris ICL7116 and ICL7117 are high performance, low power, 3 V 2 digit, A/D converters. Included are seven segment

cj TL431 transistor

Contextual Info: UCC1581 UCC2581 UCC3581 y UNITRODE Micropower Voltage Mode PWM FEATURES BLOCK DIAGRAM • Low 85jiA Startup Current • Low 300^iA Operating Current • Automatically Disabled Startup Preregulator OUT • Programmable Minimum Duty Cycle with Cycle Skipping

Contextual Info: ïfA R m S HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3, HGT1S20N60C3S Data Sheet May 1999 45A, 600V, UFS Series N-Channel IGBT This family of MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of

200 watt schematics power amp

Abstract: MCH18 MCR03 SPA-1118 SPA-1118Z TAJB106K020R Sirenza Microdevices al
Contextual Info: SPA-1118 Product Description Sirenza Microdevices’ SPA-1118 is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial

Contextual Info: ACF2101 B U R R -B R O W N Low Noise, Dual SWITCHED INTEGRATOR FEATURES APPLICATIONS • INCLUDES INTEGRATION CAPACITOR, RESET AND HOLD SWITCHES, AND OUTPUT MULTIPLEXER • LOW NOISE: lO^Vrms • LOW CHARGE TRANSFER: 0.1 pC • WIDE DYNAMIC RANGE: 120dB