CAC MARKING Search Results

SMD MARKING CODE 2M

Contextual Info: SIEMENS 2M x 8-Bit Dynamic RAM 2k-Refresh Hyper Page Mode- EDO HYB 5117805BSJ -50/-60/-70 Advanced Information • 2 097 152 words by 8-bit organization • 0 to 70 "C operating temperature • Performance: -50 -60 -70 ¿RAC RAS access time 50 60 70 ns ^CAC

B77S

Contextual Info: SIEMENS 2M x 8-Bit Dynamic RAM 2k-Refresh Hyper Page Mode- EDO HYB 5117805BSJ -50/-60/-70 Advanced Information • 2 097 152 words by 8-bit organization • 0 to 70 "C operating temperature • Performance: ^RAC ^CAC RAS access time -50 -60 -70 50 60 70

5118160BSJ

Contextual Info: SIEMENS 1M X 16-Bit Dynamic RAM 1k-Refresh HYB 5118160BSJ-50/-60/-70 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 'C operating temperature • Performance: -50 -60 -70 fRAC RAS access time 50 60 70 ^CAC CAS access time 13 15

Contextual Info: S IE M E N S 4M X 4-Bit Dynamic RAM HYB 5116400BJ -50/-60/-70 Advanced Information • 4 194 304 words by 4-bit organization • 0 to 70 ”C operating temperature • Performance: -50 -60 -70 ÍRAC R A S access time 50 60 70 *CAC C A S access time 13 15 20

mt1508

Contextual Info: MT8D88C132 S , MT16D88C232(S) 4MB. 8MB DRAM CARDS (v / m z R o rs j DRAM CARD 4,8 MEGABYTES 1 MEG, 2 MEG x 32; 5V, FAST PAGE MODE, OPTIONAL SELF REFRESH FEATURES • • • • • • • • OPTIONS T IM IN G 'RC 'RAC 'PC 'AA 'CAC 'HP -6 -7 110ns 130ns

M995

Contextual Info: |V |IC Z R O N MT4LC4M4B1 L 4 MEG X 4 DRAM DRAM 4 MEG x 4 DRAM 3.3V, FAST PAGE MODE, OPTIONAL EXTENDED REFRESH FEATURES PIN ASSIGNMENT (Top View) OPTIONS MARKING • Timing 60ns access 70ns access -6 -7 • Packages Plastic SOJ (300 mil) DJ • Refresh Rate

Contextual Info: 2 MEG x 8 EDO DRAM M IC R O N HRAM MT4LC2M8E7 MT4C2M8E7 U n M IV I FEATURES PIN ASSIGNMENT (Top View OPTIONS 28-Pin SOJ (DA-3) Vcc [ 1* DÛ1 [ 2. DQ2¿ 3 003 r 4 DQ4 5 WE# C 6 RAS# C 7 NCC 3 AIO L 9 A0 L 10 A1 C t t A2 12 A3 t 13 Vcc [ 14 MARKING • Voltages

MT4LC2M8E7

Contextual Info: 2 MEG x 8 EDO DRAM l^ lld R O N H P AM MT4LC2M8E7 MT4C2M8E7 U n M IV I FEATURES PIN ASSIGNMENT Top View OPTIONS 28-Pin SOJ (DA-3) 1• Vcc DQ1 c 2 DQ2C 3 □03 £ 4 DQ4C 5 WE# C 6 RAS# C 7 NCC 8 A 10L 9 A0 C 10 A l C 11 A2C 12 A3 13 Vcc 14 MARKING • Voltages

Contextual Info: MT4LC4M4B1 L 4 MEG X 4 DRAM MICRON 4 MEG x 4 DRAM DRAM 3.3V, FAST PAGE MODE, OPTIONAL EXTENDED REFRESH FEATURES PIN ASSIGNMENT (Top View) OPTIONS MARKING • Timing 60ns access 70ns access -6 -7 • Packages Plastic SOJ (300 mil) DJ • Refresh Rate Standard 32ms period

Contextual Info: PRELIMINARY MICRON 4 MEG x 16 EDO DRAM I MT4LC4M16R6 DRAM FEATURES PIN ASSIGNMENT Top View OPTIONS 50-Pin TSOP (DB-7) Vcc DQ1 DQ2 DQ3 DQ4 Vcc DQ5 DQ6 DQ7 DQ8 NC Vcc WE# RAS# NC NC NC NC A0 A1 A2 A3 A4 A5 Vcc MARKING • Package Plastic TSOP (400 mil) TG

Contextual Info: ADVANCE MT2D48 4 MEG X 8 DRAM MODULE MICRON I TECHNOLOGY. INC DRAM 4 MEG M O D U LE IV IU U U U L 4 MEGABYTE, 5V, FAST PAGE MODE X 8 FEATURES OPTIONS MARKING • Timing 60ns access 70ns access -6 -7 • Packages 30-pin SIMM M PIN ASSIGNMENT Front View 30-Pin SIMM

T9049

Abstract: A7005 MT9D49M-6
Contextual Info: » M I C-n Rw On Ni I iH M 49 4 MEGX 9 DRAMM OT9D DULE DRAM MODULE 4 MEG X 9 DRAM FAST PAGE MODE FEATURES OPTIONS MARKING • Timing 60ns access 70ns access 80ns access -6 -7 -8 Packages Leadless 30-pin SIMM M Part Number Example: MT9D49M-6 PIN ASSIGNMENT Top View

Contextual Info: MICRON I 1 SEMICONDUCTOR INC. MT10D140 MEG X 40 DRAM MODULE 1 MEG x 40 DRAM DRAM MODULE FAST PAGE MODE MT10D140 LOW POWER, EXTENDED REFRESH (MT10D140 L) FEATURES MARKING OPTIONS • Tim ing 60ns access 70ns access 80ns access -6 -7 -8 Packages Leadless 72-pin SIMM (gold)

Contextual Info: M ir -r a r n iS J I ^ MT2D T 132 e, MT4D232 B, MT8D432 B 1, 2, 4 MEG X 32 DRAM MODULES 1,2, 4 MEG X 32 DRAM MODULE 4, 8, 16 MEGABYTE, 5V, BURST EDO FEATURES OPTIONS PIN ASSIGNMENT (Front View) 72-Pin SIMM (DD-11) (DD-9) (DD-8) (DD-3) MARKING • Timing 52ns access; 15ns cycle

MT9259

Abstract: 1259EJ
Contextual Info: I^ IIC Z R O N MT9259 256K X 9 DRAM DRAM MODULE PIN ASSIGNMENT Top View OPTIONS Vdd CSS DQ1 A0 A1 DQ2 A2 A3 Vss DQ3 A4 A5 DQ4 A6 A7 DQ5 A8 NC NC DQ6 W Vss DQ7 PHD DQ8 09 RAS CSS9 D9 Vdd MARKING • Timing 80ns access 100ns access 120ns access 150ns access

WCs MARKING

Abstract: 514100BJ Q67100-Q759 Q67100-Q971 SMD MARKING CODE RAC code marking rah SMD MARKING code ASC
Contextual Info: 4M x 1-Bit Dynamic RAM HYB 514100BJ-50/-60 Advanced Information • 4 194 304 words by 1-bit organization • 0 to 70 °C operating temperature • Fast Page Mode Operation • Performance: -50 -60 tRAC RAS access time 50 60 ns tCAC CAS access time 13 15

MT4C4007JDJ

Abstract: L32x MT4C4007 MT80132 MT160232 micron simm
Contextual Info: M ir -a r ìM I MT8D132 X , MT16D232(X) 1 MEG, 2 MEG X 32 DRAM MODULES DRAM 1 MEG, 2 MEG x 32 M O D U L E 4, 8 8 MEGABYTE, MEGABYTE, 5V, 5V, FAST R 4, PAGE OR EDO PAGE MODE FEATURES PIN ASSIGNMENT (Front View) • JEDEC- and industry-standard pinout in a 72-pin,

EDO DRAM

Contextual Info: PRELIMINARY M IC B Q N Î H R AM U riMIVI d o d r Âm MT4LC16M4G3 MT4LC16M4H9 FEATURES • Single +3.3V +0.3V power supply • Industry-standard x4 pinout, timing, functions and packages • 12 row, 12 column addresses H9 or 13 row, 11 column addresses (G3)

Contextual Info: PRELIMINARY M IC B Q N FPM DRAM HUrtMIVI R AM MTT44LC M LC88M M88EB61 FEATURES PIN ASSIGNMENT Top View • Single +3.3V +0.3V power supply • Industry-standard x8 pinout, timing, functions and packages • 13 row, 10 column addresses (El) or 12 row, 11 column addresses (B6)

Contextual Info: OBSOLETE 4 MEG x 1 FPM DRAM MICRON I TECHNOLOGY, INC. M T4C 1004J FEATURES • 1,024-cycle refresh distributed across 16ms MT4C1004J or 128m s (M T4C1004J L only) • Industry-standard pinout, tim ing, functions and packages • H igh-perform ance CM OS silicon-gate process

Contextual Info: 1,2 , 4 MEG X 32 DRAM SODIMMs MICRON I TECHNOLOGY INC SMALL-OUTLINE DRAM MODULE MT2LDT132H X (S) MT4LDT232H (X) (S) MT8LDT432H(X)(S) FEATURES • JEDEC- and industry-standard pinout in a 72-pin, small-outline, dual in-line memory module (DIMM) • 4MB (1 Meg x 32), 8MB (2 Meg x 32),

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD4264400, 4265400 64 M-BIT DYNAMIC RAM 16 M-WORD BY 4-BIT, FAST PAGE MODE Description The µ PD4264400, 4265400 are 16,777,216 words by 4 bits dynamic CMOS RAMs. The fast page mode capability realize high speed access and low power consumption.

PD4264800

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD4264800, 4265800 64 M-BIT DYNAMIC RAM 8 M-WORD BY 8-BIT, FAST PAGE MODE Description The µPD4264800, 4265800 are 8,388,608 words by 8 bits dynamic CMOS RAMs. The fast page mode capability realize high speed access and low power consumption.

Contextual Info: 1 MEG X 4 FPM DRAM ¡M I C R O N DRAM MT4C4001J FEATURES • 1,024-cycle refresh distributed across 16ms MT4C4001J or 128ms (MT4C4001J L) • Industry-standard pinout, timing, functions and packages • High-performance CMOS silicon-gate process • Single +5V ±10% power supply