SA452
Abstract: SA336 SA424 120R S29GL512N SA487 EE8000 a78000a7ffff c58000c5ffff SA4871
Contextual Info: Am29LV2562M Data Sheet RETIRED PRODUCT This product has been retired and is not available for designs. For new and current designs, S29GL512N supersedes Am29LV2562M and is the factory-recommended migration path. Please refer to the S29GL512N Data Sheet for specifications and ordering information. Availability of this
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am29lv2562ms29gl512nsa452sa336+7sa424120rsa487ee8000a78000a7ffffc58000c5ffffsa4871
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asme SA388
Abstract: gl128m A2113 S29GL256 E78000 S29GL128N TSOP56 S29GL128N sa32sa35 S29GLxxxM BGA-63
Contextual Info: S29GL-M MirrorBitTM フラッシュファミリ S29GL256M，S29GL128M，S29GL064M，S29GL032M 256M ビット，128M ビット，64M ビット，および 32M ビット， 3.0V 単一電源，ページモードフラッシュメモリ 0.23µm MirrorBit プロセステクノロジ
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s29gl-ms29gl256ms29gl128ms29gl064ms29gl032ms29gl128ms29gl128ns29gl256ms29gl256n+14s29glxxxn00-b-5s29gl032mlaa064asme sa388gl128ma2113s29gl256e78000s29gl128ntsop56 s29gl128nsa32sa35s29glxxxmbga-63
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120R
Abstract: C8800
Contextual Info: Am29LV2562M Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and
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l256mh113
Abstract: L256ML123R
Contextual Info: Am29LV256M Data Sheet September 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and
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L256MH113R
Abstract: L256ML113R
Contextual Info: Am29LV256M Data Sheet -XO\ 7KH IROORZLQJ GRFXPHQW VSHFLILHV 6SDQVLRQ PHPRU\ SURGXFWV WKDW DUH QRZ RIIHUHG E\ ERWK $GYDQFHG 0LFUR 'HYLFHV DQG XMLWVX $OWKRXJK WKH GRFXPHQW LV PDUNHG ZLWK WKH QDPH RI WKH FRPSDQ\ WKDW RULJ LQDOO\ GHYHORSHG WKH VSHFLILFDWLRQ WKHVH SURGXFWV ZLOO EH RIIHUHG WR FXVWRPHUV RI ERWK $0' DQG
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s29gl032m10tair
Contextual Info: S29GLxxxM MirrorBitTM Flash Family S29GL256M, S29GL128M, S29GL064M, S29GL032M 256 Megabit, 128 Megabit, 64 Megabit, and 32Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology Datasheet PRELIMINARY Distinctive Characteristics
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s29glxxxms29gl256ms29gl128ms29gl064m+6s29gl032m32megabit128-word/256-byte8-word/16-bytebga-80p-m02s29gl032m10tair
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7BA4
Contextual Info: BENEFITS APPLICATIONS • • • • • • • • • • • • Hermetically sealed switch Contacts have no effect on their external environment Low space requirement Zero operating power required Fit and forget durability Reed Relays Security Limit Switching
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ha15-2123456275689a25bcd234567489a1213456372857469ab+17ba4
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SA293
Abstract: SA273 988000
Contextual Info: DATASHEET Am29LV256M 256 Megabit 16 M x 16-Bit/32 M x 8-Bit MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Single power supply operation — 3 volt read, erase, and program operations
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L256ML
Abstract: SA4871 BD8000 sa340 transistor SA427 SA370 8A000 740-0007 Am29LV256 SA36-110
Contextual Info: ADVANCE INFORMATION Am29LV256M 256 Megabit 16 M x 16-Bit/32 M x 8-Bit MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Single power supply operation — 3 volt read, erase, and program operations
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29gl064
Abstract: TSR056 BGA-63 S29GL032A S29GL032M S29GL064A S29GL064M S29GL128M TSOP-20 S29GL256M
Contextual Info: S29GL-M MirrorBitTM Flash Family S29GL256M, S29GL128M, S29GL064M, S29GL032M 256 Megabit, 128 Megabit, 64 Megabit, and 32 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 0.23 µm MirrorBit Process Technology Data Sheet This product family has been retired and is not recommended for designs. For new and current designs, S29GL032A, S29GL064A, S29GL128N, and S29GL256N supersede S29GL032M,
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sa330
Abstract: E3800 spansion top marking Am29LV256M Am29LV256MH S29GL256M
Contextual Info: Am29LV256M Data Sheet For new designs, S29GL256M supercedes Am29LV256MH/L and is the factory-recommended migration path for this device. Please refer to the S29GLxxxM Family Datasheet for specifications and ordering information. July 2003 The following document specifies Spansion memory products that are now offered by both Advanced
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S29GL128P
Abstract: a8800 S29GL032 S29GL256p S29GL032A S29GL032M S29GL064A S29GL064M S29GL128M S29GL256M
Contextual Info: S29GL-M MirrorBitTM Flash Family S29GL256M, S29GL128M, S29GL064M, S29GL032M 256 Megabit, 128 Megabit, 64 Megabit, and 32 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 0.23 µm MirrorBit Process Technology Data Sheet This product family has been retired and is not recommended for designs. For
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29gl064
Abstract: Operations-S29GL064M 29gl064M 8A000 TSOP-20 FOOTPRINT S29GL032M lead frame pin grid array GL128M jedec mo-142 GL256M
Contextual Info: S29GL-M MirrorBitTM Flash Family S29GL256M, S29GL128M, S29GL064M, S29GL032M 256 Megabit, 128 Megabit, 64 Megabit, and 32 Megabit 3.0 Volt-only Page Mode Flash Memory Featuring 0.23 µm MirrorBit Process Technology Data Sheet For new designs, S29GL032A, S29GL064A, S29GL128N, and S29GL256N supersede S29GL032M, S29GL064M, S29GL128M, and S29GL256M,
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A44E
Abstract: C22F C55F cs5f C202F C14F C11F C12F C201F C203F
Contextual Info: TECHNICA L IN FO R M A TIO N Tempera^ uiire Coefficients Type Capacitance pF C54E C77E 33000 - 50000 50000 - 10OOCO Capacitor Tolerance ± c 500 V O LT W O R K IN G 5-2-I-0.5 5-2-1-0.5 I X b X d max mm a mm 31.7 X 25.4 X 10.2 4 4 .2 x 3 2 .8 x 8 .5 25.4
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8A0000
Contextual Info: S29GLxxxM MirrorBitTM Flash Family S29GL256M, S29GL128M, S29GL064M, S29GL032M 256 Megabit, 128 Megabit, 64 Megabit, and 32Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology Datasheet PRELIMINARY Distinctive Characteristics
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SA508
Abstract: Am29LV256M SA285 SA276 CD8000 E68000 988000
Contextual Info: ADVANCE INFORMATION Am29LV256M 256 Megabit 16 M x 16-Bit/32 M x 8-Bit MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Single power supply operation — 3 volt read, erase, and program operations
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Spansion S29GL256N90
Abstract: S29GL512N11 S29GL256N10 S29GL512NH GL512N TXI002 S29GL256N90
Contextual Info: S29GLxxxN MirrorBitTM Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit process technology ADVANCE INFORMATION Data Sheet Distinctive Characteristics Architectural Advantages
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CD8000
Contextual Info: Am29LV256M Data Sheet For new designs, S29GL256M supersedes Am29LV256MH/L and is the factory-recommended migration path for this device. Please refer to the S29GLxxxM Family Datasheet for specifications and ordering information. July 2003 The following document specifies Spansion memory products that are now offered by both Advanced
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E525
Abstract: E5-25
Contextual Info: 123456789ABCDED12F4567 D6D6 123456789ABCDED12F4567 67D5 !D9C1"8 # !D3$%&% 1 '$ BF F5 !B7FC5 FB7AFF5 DF5 "#F95 $8FCD5 F$$FA 97 8 9 5 79F5 "9DAFD5 8%5 6789AB8CD& 5 "9"98F79' "C7795 98"F5 E5FABC%'
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E78000
Abstract: SA370 Am29LV256MH98R L256MH113R L256MH128 L256MH123R LAC064 11D00
Contextual Info: ADVANCE INFORMATION Am29LV256M 256 Megabit 16 M x 16-Bit/32 M x 8-Bit MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with Enhanced VersatileI/OTM Control DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Single power supply operation — 3 volt read, erase, and program operations
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s29gl032m10tair
Abstract: s29gl02 S29GL256
Contextual Info: S29GLxxxM MirrorBitTM Flash Family S29GL256M, S29GL128M, S29GL064M, S29GL032M 256 Megabit, 128 Megabit, 64 Megabit, and 32Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology Datasheet PRELIMINARY Distinctive Characteristics
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SA326
Abstract: 06C00 988000 04A0000 SA-450
Contextual Info: ADVANCE INFORMATION Am29LV256M 256 Megabit 16 M x 16-Bit/32 M x 8-Bit MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Single power supply operation — 3 volt read, erase, and program operations
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tsop tray matrix outline
Abstract: S29GL032M S29GL064M S29GL128M S29GL256M S29GL128* FOOTPRINT
Contextual Info: S29GLxxxM MirrorBitTM Flash Family S29GL256M, S29GL128M, S29GL064M, S29GL032M 256 Megabit, 128 Megabit, 64 Megabit, and 32Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology Datasheet DATASHEET Distinctive Characteristics
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A44E
Abstract: C14F A12E C22F A33E C101E cs5f A15E C12E C14E
Contextual Info: I 'E' Finish Resin Encapsulated I Tem perature Range — 55°C to + 1 0 0 °C Type Capacitance pF C5E C6E C12E A12E C14E A15E A25E C101E C201E C202E C203E C204E A33E C33E C35E 271 681 2001 2001 2001 5 600(3 1501 4001 10001 - 680 1500 3500 3500 3500 6000
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