C4777 Search Results

Contextual Info: MODULE APD module C4777 series APD module integrated with peripheral circuits Features Applications l Uses high sensitivity APD C4777 Two types of APDs with different active areas l Spatial light transmission φ0.5 mm, φ3.0 mm are provided. communication

temperature control circuit

Abstract: NOx sensor C4777 C4777-01 APD, applications, bias supply
Contextual Info: MODULE APD module C4777 series APD module integrated with peripheral circuits Features Applications l Uses high sensitivity APD C4777 Two types of APDs with different active areas l Spatial light transmission φ0.5 mm, φ3.0 mm are provided. communication

temperature control circuit

Abstract: C4777 NOx sensor C4777-01 APD, applications, bias supply APD bias gain
Contextual Info: MODULE APD module C4777 series APD module integrated with peripheral circuits Features Applications l Uses high sensitivity APD C4777 Two types of APDs with different active areas l Spatial light transmission φ0.5 mm, φ3.0 mm are provided. communication

temperature control circuit

Contextual Info: MODULE APD module C4777 series APD module integrated with peripheral circuits Features Applications l Uses high sensitivity APD C4777 Two types of APDs with different active areas l Spatial light transmission φ0.5 mm, φ3.0 mm are provided. communication

C4777-01

Abstract: C4777
Contextual Info: MODULE APDモジュール C4777シリーズ APD（アバランシェ・フォトダイオード）と周辺回路を一体化 特長 用途 l 高感度APDを使用 2種類の受光面サイズ φ 0.5 mm, φ 3 mm を用意しています。 l 高速光検出タイプと微弱光検出タイプの2種類を用意

pyroelectric amplifier circuit

Abstract: "Pyroelectric Detectors" pyroelectric detector P4488
Contextual Info: Applicable Equipments APD Modules The APD Module series are high-sensitivity photodetectors that integrate an APD avalanche photodiode and a fast-response, low-noise current-to-voltage conversion amplifier circuit, along with the bias power supply. The following 4 types are available

APD reverse bias stability

Abstract: Si apd photodiode S43N
Contextual Info: Si APDs Type No. S5343 Blue-enhanced Dimensional Outline (P.40,41)/ Window Material*' Package U T O -18 Size Area Spectral*2 Response Range (mm) (mm2) (nm) Peak Sensitivity Wavelength Ap (nm) $ 1.0 0.78 200 to 1000 620 Active Area Effective Active S5344

S4315

Abstract: APD reverse bias stability C5331 Si apd photodiode 10NAX S2385 52384 kap06 Si apd photodiode rangefinder S2381
Contextual Info: Si APDs Type No. Low-bias Operation Types, for 800 nm Range Dimensional O utline (P.46, 47)/ W indow M a te ria l-1 Package S2381 Effective '3 Effective Active Area Active Size Area (mm) (mm2) Ô0.2 0.03 (J)0.5 0.19 (>1.0 0.78 <t>1.5 1.77 Spectral Response

molex 5484-03AX

Abstract: C5331 5484-03AX C4777 C4777-01 C5460 C5460-01 C5658 53047-0810 MOLEX 53047-0810
Contextual Info: MODULE APD module C10508 Variable gain and stable detection even at high gains Along with an APD, current-to-voltage conversion circuit, and high-voltage power supply circuit, the C10508 contains a microcontroller to perform temperature compensation based on information from the internal thermosensor. Because temperature coefficients that match the APD temperature

C5460

Abstract: 5484-03AX C5331 C5658 C4777 C4777-01 C5460-01 C10508 5484-03 5484-03a
Contextual Info: APDモジュール C10508 増倍率可変高増倍率でも安定した検出が可能 C10508はAPD、電流－電圧変換回路、高圧電源回路に加えて、温度センサからの情報を元に高安定に温度補償を行うための マイコンを内蔵しています。マイコンにはAPDの温度特性に合わせた係数が書き込まれているため、高い増倍率においても

c5658

Contextual Info: SILICON PHOTODIODES S-16. Si APDs Blue-enhanced T,f-4 I • f.+ : r -i ■ r.+r* V 'i- -* -*: ■ r- t- * ;I. : ■ a S5343. S5344. S5345 Optimized for low-light-level detection Compared to conventional Si APDs, these new Si APDs offer higher gain at short wavelength, achieving high sensitivity and low noise. They also

C2625 transistor

Abstract: C5679 transistor TRANSISTOR C3675 C5679 C2655 NPN Transistor transistor c5855 c3746 transistor transistor c3746 transistor C4770 c5855
Contextual Info: Rack & Cabinet Mounting Converters 150-12 k Watts C SERIES CE Marked - LVD & EMC • Over 1700 Different Models • DC Inputs 10 - 900 Volts • Single & Multi Outputs • Fully Wired Customised Racks • Parallel Redundant Systems • Euro Cassette or Wall Mount

S13081

Abstract: APD Arrays
Contextual Info: Si APD, MPPC CHAPTER 03 1 Si APD 1-1 Features 1-2 Principle of avalanche multiplication 1-3 Dark current 1-4 Gain vs. reverse voltage characteristics 1-5 Noise characteristics 1-6 Spectral response 1-7 Response characteristics 1-8 Multi-element type 1-9 Connection to peripheral circuits

Contextual Info: 2007 Vol.1 NEWS Belgium / Denmark / France / Germany / Italy / Netherlands / North Europe & CIS / 16 models with different spectral response, resolution, sensitivity, etc. Select a model that fits your application 4 MPPC Multi-Pixel Photon Counter 8 10 Gbps ROSA

PS8121E

Abstract: f2116te20v c4589 AN12946 PS8121 C4574 SLG8SP568V cx20561-15z schematic diagram lcd monitor lenovo lenovo
Contextual Info: Intel Penryn DC, QC, Extream Processor 3,5 June 18 ' 08 AGTL+ FSB UNBUFFERED DDR3 SODIMM Normal/Reverse Socket N-note Block Diagram ITP Conn. UNBUFFERED DDR3 SODIMM Normal/Reverse Socket Channel B 1067/800MHz Keyboard Light LVDS Intel Cantiga-PM DDR3 1067/800MHz

C6073

Abstract: SIL1178 c6074 C9013 NEC C3568 c4793 c5885 K769 C6090 15B1 zener diode
Contextual Info: 8 6 7 REV STD D PDF CSA 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM

S8550 equivalent

Contextual Info: Si APDMPPC 第 章 3 1 Si APD 章 1-1 特長 1-2 アバランシェ増倍の原理 1-3 暗電流 1-4 増倍率ー逆電圧特性 1-5 ノイズ特性 1-6 分光感度特性 1-7 応答特性 1-8 多素子タイプ 1-9 周辺回路との接続 1-10 新たな取り組み

S4753

Abstract: Photodiode apd amplifier S4751 photodiode 10Ghz PIN APD, applications, bias supply PIN photodiode 5ghz rise time apd APD 10ghz S4752
Contextual Info: C APD MODULES An APD high-speed amplifier and power supply on a compact board The APD Module series are high-sensitivity photodetectors that integrate an APD avalanche photodiode and a fast-response, low-noise current-to-voltage conversion amplifier circuit, along with the bias power supply. The follow­

C5460

Abstract: K800
Contextual Info: Si APDS Short-wavelength Types Area Spectral Response Range X Peak *3 Sensitivity W avelength Xp Photo Sensitivity M=1 X^620 nm Quantum Efficiency M=1 \= 6 2 0 nm (mm) (mm2) (nm) (nm) (A/W) (%) TO-18 01.0 0.78 /U TO-5 03.0 7.0 200 to 1000 620 0.42 80

c6073

Abstract: C6074 C6091 C6089 1CA033 ar9103 SIL1178 NEC C3568 c6092 U2390
Contextual Info: 6 7 REV STD D CSA 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM

Contextual Info: 1234356 Enhanced SoloLIN Transceiver 789ABC8D6 1 Compatible to LIN Physical Layer Specification Rev.1.3 and 2.0 1 Compatible to ISO9141 functions 1 Operating voltage VS = 7 to 18 V 1 Very low standby current consumption of 6.5µA in sleep mode 1 Remote wake up via bus traffic

molex 5484-03AX

Contextual Info: MODULE APD module C10508 Variable gain and stable detection even at high gains Along with an APD, current-to-voltage conversion circuit, and high-voltage power supply circuit, the C10508 contains a microcontroller to perform temperature compensation based on information from the internal thermosensor. Because temperature coefficients that match the APD temperature

PS8121E

Abstract: USB2507-ADT cx20561-15z TS3DV421RUAR-GP AN12946A AN12946 R7121 f2116te20v lenovo schematic diagram lcd monitor lenovo
Contextual Info: Intel Penryn DC, QC, Extream Processor 3,5 June 18 ' 08 AGTL+ FSB UNBUFFERED DDR3 SODIMM Normal/Reverse Socket N-note Block Diagram ITP Conn. Channel B UNBUFFERED DDR3 SODIMM Normal/Reverse Socket 1067/800MHz Keyboard Light LVDS Intel Cantiga-PM DDR3 1067/800MHz

Contextual Info: Si APDS Short-wavelength Enhanced Types Active Area Spectral Response Range X Peak '3 Sensitivity Wavelength A.p Photo Sensitivity M=1 >.=620 nm Quantum Efficiency M=1 X=620 nm (mm) (mm2) (nm) (nm) (A/W) (%) TO-18 c>1.0 0.78 TO-5 <(>3.0 7.0 200 to 1000 620