S13081 Search Results
S13081 Price and Stock
AATC AKS-1308-1Speakers & Transducers Speaker 8ohm 0.7W, 8ohm | 
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AKS-1308-1 | 501 | 
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TE Connectivity S1308-1-100/160S1308-1-100/160 | 
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S1308-1-100/160 | 399 | 3 | 
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S1308-1-100/160 | 399 | 
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SOURIAU-SUNBANK S4179FMS1308-12-2BACKSHELL | 
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S4179FMS1308-12-2 | 
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Sunny Electronics Corp SYS1308-1809-W2E-2.1Power Supply; wall-mounted; 18W; 9V; 0-2A; EU | 
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SYS1308-1809-W2E-2.1 | 29 | 1 | 
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Sunny Electronics Corp SYS1308-1808-W2E-2.1Power Supply; wall-mounted; 18W; 7.5V; 0-2.4A | 
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SYS1308-1808-W2E-2.1 | 3 | 1 | 
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S13081 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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 Contextual Info: SPICE Device Model SiR460DP www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the  | 
 Original  | 
SiR460DP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
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 Contextual Info: SPICE Device Model SiR416DP www.vishay.com Vishay Siliconix N-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C  | 
 Original  | 
SiR416DP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
S13081
Abstract: APD Arrays 
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org/abs/1003 6071v2 S13081 APD Arrays | |
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 Contextual Info: SPICE Device Model SiR438DP www.vishay.com Vishay Siliconix N-Channel 25 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the  | 
 Original  | 
SiR438DP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
SiR440DPContextual Info: SPICE Device Model SiR440DP www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the  | 
 Original  | 
SiR440DP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 |