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SIR438DP Datasheets (1)

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Vishay Siliconix

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
SIR438DP-T1-GE3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 25V 60A PPAK 8SOIC	Original	PDF		9

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Vishay Intertechnologies SIR438DP-T1-GE3 - Tape and Reel (Alt: SIR438DP-T1-GE3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SIR438DP-T1-GE3	Tape & Reel		52 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.77	Buy Now
Mouser Electronics	SIR438DP-T1-GE3		1,104			1 $2.87 10 $1.42 100 $1.28 1000 $1.05 10000 $0.90	Buy Now
Newark ()	SIR438DP-T1-GE3	Tape & Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.86	Buy Now
	SIR438DP-T1-GE3	Cut Tape			3,000	1 - 10 - 100 - 1000 - 10000 $1.19	Buy Now
TTI	SIR438DP-T1-GE3	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.84	Buy Now
TME	SIR438DP-T1-GE3				3,000	1 - 10 - 100 - 1000 - 10000 $1.34	Get Quote

EBV Elektronik	SIR438DP-T1-GE3			53 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vishay Siliconix SIR438DPT1GE3 Power Field-Effect Transistor, 40A I(D), 25V, 0.0023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	SIR438DPT1GE3		200			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vishay Huntington SIR438DP-T1-GE3 MOSFET N-CH 25V 60A PPAK SO-8
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Win Source Electronics	SIR438DP-T1-GE3		6,000			1 - 10 - 100 - 1000 $0.23 10000 $0.20	Buy Now

SIR438DP Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
SiR438DP-T1-GE3 Abstract: SiR438DP Contextual Info: New Product SiR438DP Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0018 at VGS = 10 V 60 0.0023 at VGS = 4.5 V 60 VDS (V) 25 Qg (Typ.) 32.6 nC PowerPAK SO-8 • • • • Halogen-free According to IEC 61249-2-21	Original	sir438dp sir438dp-t1-ge3 18-jul-08	PDF
SiR438DP Contextual Info: SPICE Device Model SiR438DP Vishay Siliconix N-Channel 25-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range	Original	sir438dp 18-jul-08	PDF
Contextual Info: New Product SiR438DP Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0018 at VGS = 10 V 60 0.0023 at VGS = 4.5 V 60 VDS (V) 25 Qg (Typ.) 32.6 nC PowerPAK SO-8 • • • • Halogen-free According to IEC 61249-2-21	Original	sir438dp sir438dp-t1-ge3 2002/95/ec 2011/65/eu +2js709a 02-oct-12	PDF
A10570 Contextual Info: New Product SiR438DP Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0018 at VGS = 10 V 60 0.0023 at VGS = 4.5 V 60 VDS (V) 25 Qg (Typ.) 32.6 nC PowerPAK SO-8 • • • • Halogen-free According to IEC 61249-2-21	Original	sir438dp sir438dp-t1-ge3 2011/65/eu 2002/95/ec +212-mar-12 a10570	PDF
69051 Abstract: 8326 AN609 Contextual Info: SiR438DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,	Original	sir438dp an609 04-nov-08 69051 +18326	PDF
Contextual Info: New Product SiR438DP Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0018 at VGS = 10 V 60 0.0023 at VGS = 4.5 V 60 VDS (V) 25 Qg (Typ.) 32.6 nC PowerPAK SO-8 • • • • Halogen-free According to IEC 61249-2-21	Original	sir438dp sir438dp-t1-ge3 11-mar-11	PDF
Contextual Info: SPICE Device Model SiR438DP www.vishay.com Vishay Siliconix N-Channel 25 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the	Original	sir438dp 2002/95/ec 2011/65/eu js709a +102-oct-12	PDF
SiR438DP-T1-GE3 Abstract: A-6448 Contextual Info: New Product SiR438DP Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0018 at VGS = 10 V 60 0.0023 at VGS = 4.5 V 60 VDS (V) 25 Qg (Typ.) 32.6 nC PowerPAK SO-8 • • • • Halogen-free According to IEC 61249-2-21	Original	sir438dp sir438dp-t1-ge3 11-mar-11 a-6448	PDF
Contextual Info: New Product SiR438DP Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0018 at VGS = 10 V 60 0.0023 at VGS = 4.5 V 60 VDS (V) 25 Qg (Typ.) 32.6 nC PowerPAK SO-8 • • • • Halogen-free According to IEC 61249-2-21	Original	sir438dp sir438dp-t1-ge3 2011/65/eu 2002/95/ec +112-mar-12	PDF
Contextual Info: New Product SiR438DP Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0018 at VGS = 10 V 60 0.0023 at VGS = 4.5 V 60 VDS (V) 25 Qg (Typ.) 32.6 nC PowerPAK SO-8 • • • • Halogen-free According to IEC 61249-2-21	Original	sir438dp sir438dp-t1-ge3 2002/95/ec 2011/65/eu +2js709a 02-oct-12	PDF
4TPF470ML Abstract: ltc3852 50HVP56M LT 3852 c 3852 LT3808 SUNCon me vitec LTC3852E LTC3852EUDD Contextual Info: LTC3852 Low Input Voltage, Synchronous Step-Down DC/DC Controller DESCRIPTION FEATURES n n n n n n n n n n n n n n Charge Pump Input Range: 2.7V to 5.5V Controller Input Range: 4V to 38V Integrated Charge Pump Provides 5V Gate Drive to Logic Level MOSFETs	Original	ltc3852 250khz 750khz 24-lead +14lt3808 ltc3809/ltc3809-1 ltc3809-1 ltc3822/ltc3822-1 ltc3836 3852f 4tpf470ml 50hvp56m lt 3852 c 3852 suncon me vitec ltc3852e ltc3852eudd	PDF
si7738 Contextual Info: Application Note 1628 Author: Jiong Huang ISL6726EVAL1Z Current Mode Active Clamp Forward with SR for Medium Power Applications Description Key Features The ISL6726EVAL1Z board is a 48V input to 5V output DC/DC converter that can output current up to 40A. This application	Original	isl6726eval1z isl6726 600mv 530mv +3540mv an1628 si7738	PDF
FSQ510 Equivalent Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2 Contextual Info: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178	Original	gp-20 fsq510 equivalent bta12 6008 bta16 6008 +7zigbee interface with avr atmega16 precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 a564 transistor bsm25gp120 b2	PDF
Contextual Info: V i s h ay I n tertec h n olo g y, I n c . Power MOSFETs M O S F ET s Tre nchFET G e n III Key features and Benefits Low conduction and switching losses enable increased efficiency and reduced power consumption • Record-breaking maximum on-resistance at VGS = 4.5 V rating	Original	vmn-pt0105-1007	PDF

si7121 Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®	Original	mediu33-4-9337-2727 vmn-sg2127-1210 si7121 si4914b +8si-4102 si4599 si4483a sir166 irfd120 si7949 si4459a sir836	PDF
Diode SOT-23 marking 15d Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477 Contextual Info: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs	Original	diod92 vmn-sg2127-0911 diode sot-23 marking 15d si4210 +8si4812b si-4102 si7149dp sim400 si4932 si7135 sib914 si4477	PDF