SIR438DP Search Results

SiR438DP-T1-GE3

Abstract: SiR438DP
Contextual Info: New Product SiR438DP Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0018 at VGS = 10 V 60 0.0023 at VGS = 4.5 V 60 VDS (V) 25 Qg (Typ.) 32.6 nC PowerPAK SO-8 • • • • Halogen-free According to IEC 61249-2-21

SiR438DP

Contextual Info: SPICE Device Model SiR438DP Vishay Siliconix N-Channel 25-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range

Contextual Info: New Product SiR438DP Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0018 at VGS = 10 V 60 0.0023 at VGS = 4.5 V 60 VDS (V) 25 Qg (Typ.) 32.6 nC PowerPAK SO-8 • • • • Halogen-free According to IEC 61249-2-21

A10570

Contextual Info: New Product SiR438DP Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0018 at VGS = 10 V 60 0.0023 at VGS = 4.5 V 60 VDS (V) 25 Qg (Typ.) 32.6 nC PowerPAK SO-8 • • • • Halogen-free According to IEC 61249-2-21

69051

Abstract: 8326 AN609
Contextual Info: SiR438DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,

Contextual Info: New Product SiR438DP Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0018 at VGS = 10 V 60 0.0023 at VGS = 4.5 V 60 VDS (V) 25 Qg (Typ.) 32.6 nC PowerPAK SO-8 • • • • Halogen-free According to IEC 61249-2-21

Contextual Info: SPICE Device Model SiR438DP www.vishay.com Vishay Siliconix N-Channel 25 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the

SiR438DP-T1-GE3

Abstract: A-6448
Contextual Info: New Product SiR438DP Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0018 at VGS = 10 V 60 0.0023 at VGS = 4.5 V 60 VDS (V) 25 Qg (Typ.) 32.6 nC PowerPAK SO-8 • • • • Halogen-free According to IEC 61249-2-21

Contextual Info: New Product SiR438DP Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0018 at VGS = 10 V 60 0.0023 at VGS = 4.5 V 60 VDS (V) 25 Qg (Typ.) 32.6 nC PowerPAK SO-8 • • • • Halogen-free According to IEC 61249-2-21

Contextual Info: New Product SiR438DP Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0018 at VGS = 10 V 60 0.0023 at VGS = 4.5 V 60 VDS (V) 25 Qg (Typ.) 32.6 nC PowerPAK SO-8 • • • • Halogen-free According to IEC 61249-2-21

4TPF470ML

Abstract: ltc3852 50HVP56M LT 3852 c 3852 LT3808 SUNCon me vitec LTC3852E LTC3852EUDD
Contextual Info: LTC3852 Low Input Voltage, Synchronous Step-Down DC/DC Controller DESCRIPTION FEATURES n n n n n n n n n n n n n n Charge Pump Input Range: 2.7V to 5.5V Controller Input Range: 4V to 38V Integrated Charge Pump Provides 5V Gate Drive to Logic Level MOSFETs

si7738

Contextual Info: Application Note 1628 Author: Jiong Huang ISL6726EVAL1Z Current Mode Active Clamp Forward with SR for Medium Power Applications Description Key Features The ISL6726EVAL1Z board is a 48V input to 5V output DC/DC converter that can output current up to 40A. This application

FSQ510 Equivalent

Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
Contextual Info: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178

Contextual Info: V i s h ay I n tertec h n olo g y, I n c . Power MOSFETs M O S F ET s Tre nchFET G e n III Key features and Benefits Low conduction and switching losses enable increased efficiency and reduced power consumption • Record-breaking maximum on-resistance at VGS = 4.5 V rating

si7121

Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®

Diode SOT-23 marking 15d

Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
Contextual Info: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs