C3H MARKING Search Results

C3H marking

Abstract: uPC3215TB-E3 UPC2712T marking C3h c3h nec VP15-00-3 marking c1h F MARKING 6PIN
Contextual Info: PRELIMINARY DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC3215TB 5 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER DESCRIPTION The µPC3215TB is a silicon monolithic IC designed as wideband amplifier. The µPC3215TB is suitable to systems required wideband operation from HF to L band.

Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC3215TB 5 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER DESCRIPTION The µPC3215TB is a silicon monolithic IC designed as wideband amplifier. The µPC3215TB is suitable to systems required wideband operation from HF to L band.

nec b1007

Abstract: T79 code marking C3206 marking s16 marking code C1H qfn marking t88 C3H marking NE02107 T79 marking C3206G
Contextual Info: California Eastern Laboratories Package Dimensions PART NUMBER DESCRIPTION NE68018 NEC part numbers are specified by die and package number. NE680 Die "18" Package PACKAGE MARKINGS NEC devices are marked with various indications which indicate part type, lot code year and month . Due to size constraints,

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

MARKING 702 6pin

Abstract: MARKING 702 6pin ic
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

AK8973

Abstract: C3H 16-pin QFN 9221 ST C3H marking QFN Magnetic Sensor serial "Magnetic Sensor" AKM ST 9221 marking c1h H1Z2 3 axis compass
Contextual Info: ASAHI KASEI [AK8973] =Preliminary= AK8973 3-axis Electronic Compass 1. Features … 3-axis electronic compass IC … Optimal built-in electronic compass for mobile phones and handy terminals … High sensitivity Hall sensors are integrated. … Functions • Built-in 8-bit ADC

AK8973

Abstract: 8973 gps h1z6 compas compass ic hzda1 3-AXIS MAGNETIC SENSOR C3H 16-pin QFN AKM8973
Contextual Info: ASAHI KASEI [AK8973] =Preliminary= AK8973 3-axis Electronic Compass 1. Features … 3-axis electronic compass IC … Optimal built-in electronic compass for mobile phones and handy terminals … High sensitivity Hall sensors are integrated. … Functions • Built-in 8-bit ADC

C3H marking

Abstract: C3K marking marking c1g PC3224TB marking c3k PC3215TB C3k mmic marking c1h capacitor feed-through C1H mmic
Contextual Info: BIPOLAR ANALOG INTEGRATED CIRCUIT UPC3224TB 5 V, SILICON MMIC WIDEBAND AMPLIFIER DESCRIPTION The PC3224TB is a silicon monolithic IC designed as IF amplifier for DBS tuners. This IC is manufactured using our 30 GHz fmax UHS0 Ultra High Speed Process silicon bipolar process.

Contextual Info: BIPOLAR ANALOG INTEGRATED CIRCUIT PC3240TB 3.3 V, SILICON MMIC WIDE BAND AMPLIFIER DESCRIPTION The PC3240TB is a silicon monolithic integrated circuit designed as IF amplifier for DBS LNB. This device exhibits low noise figure and high power gain characteristics.

marking C3Z

Abstract: marking c1h PC3242TB PC2712TB "Marking k2" mmic
Contextual Info: BIPOLAR ANALOG INTEGRATED CIRCUIT PC3242TB 3.3 V, SILICON GERMANIUM MMIC WIDE BAND AMPLIFIER DESCRIPTION The PC3242TB is a silicon germanium monolithic integrated circuit designed as IF amplifier for DBS LNB. This device exhibits low noise figure and high power gain characteristics.

Contextual Info: Actual Size 3,00 mm x 3,00 mm www.ti.com bq2022 SLUS526F – OCTOBER 2002 – REVISED DECEMBER 2006 1K-BIT SERIAL EPROM WITH SDQ INTERFACE FEATURES • • • • • • • • The bq2022 SDQ interface (TI's proprietary serial communications protocol) requires only a single

Contextual Info: Actual Size 3,00 mm x 3,00 mm www.ti.com bq2022 SLUS526F – OCTOBER 2002 – REVISED DECEMBER 2006 1K-BIT SERIAL EPROM WITH SDQ INTERFACE FEATURES • • • • • • • • The bq2022 SDQ interface (TI's proprietary serial communications protocol) requires only a single

48-Pin TSOP - Type 1, CPL

Abstract: SpecTek flash SpecTek nand nand flash 32gb x16 SpecTek nand 8 flash chip 8gb Micron NAND flash 32gb L41A nand BA12 FNNL41A
Contextual Info: Advance‡ 8Gb, 16Gb, and 32Gb: x8/x16 NAND Flash Memory Features NAND Flash Memory MLC FNNL41A Features Figure 1: 48-Pin TSOP Type 1 • Organization – Page size: x8: 2,112 bytes 2,048 + 64 bytes Block size: 128 pages (256K + 8K bytes) – Device size: 8Gb: 4,096 blocks

48-Pin TSOP - Type 1, CPL

Abstract: SpecTek flash micron nand flash chip 16gb SpecTek nand nand flash 32gb x16 spectek nand flash 8GB-16GB BA12 L41A Micron NAND flash 32gb
Contextual Info: Advance‡ 8Gb, 16Gb, and 32Gb: x8/x16 NAND Flash Memory Features NAND Flash Memory MLC FNNL41A Features Figure 1: 48-Pin TSOP Type 1 • Organization – Page size: x8: 2,112 bytes 2,048 + 64 bytes Block size: 128 pages (256K + 8K bytes) – Device size: 8Gb: 4,096 blocks

Contextual Info: bq2022A Actual Size 3,00 mm x 3,00 mm www.ti.com SLUS724C – SEPTEMBER 2006 – REVISED AUGUST 2007 1K-BIT SERIAL EPROM WITH SDQ INTERFACE FEATURES DESCRIPTION 1 • 2 • • • • • • • 1024 bits of One-Time Programmable (OTP) EPROM For Storage Of User-Programmable

Contextual Info: bq2022A Actual Size 3,00 mm x 3,00 mm www.ti.com SLUS724C – SEPTEMBER 2006 – REVISED AUGUST 2007 1K-BIT SERIAL EPROM WITH SDQ INTERFACE FEATURES DESCRIPTION 1 • 2 • • • • • • • 1024 bits of One-Time Programmable (OTP) EPROM For Storage Of User-Programmable

PC3224TB

Abstract: 2F P marking PC321 UPC3227TB PC2712T PC3227TB-E3-A
Contextual Info: BIPOLAR ANALOG INTEGRATED CIRCUIT UPC3227TB 5 V, SILICON GERMANIUM MMIC WIDEBAND AMPLIFIER DESCRIPTION The PC3227TB is a silicon germanium SiGe monolithic integrated circuit designed as IF amplifier for DBS tuners. This IC is manufactured using our 50 GHz fmax UHS2 (Ultra High Speed Process) SiGe bipolar process.

Contextual Info: Preliminary FM25V05 512Kb Serial 3V F-RAM Memory Features 512K bit Ferroelectric Nonvolatile RAM • Organized as 64K x 8 bits • High Endurance 100 Trillion 1014 Read/Writes • 10 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

Contextual Info: [AK7600] AK7600 2/6-Channel Audio CODEC with Digital EQ GENERAL DESCRIPTION AK7600 is a CODEC 2ch ADC, 6ch DAC with a delay line memory and digital filters such as EQ. This device operates in master mode and the internal sampling rate is 44.1kHz. It supports 5.0V single input

Contextual Info: Preliminary FM25V10 1Mb Serial 3V F-RAM Memory Features 1M bit Ferroelectric Nonvolatile RAM • Organized as 128K x 8 bits • High Endurance 100 Trillion 1014 Read/Writes • 10 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

marking c1h

Abstract: AK7600 LT 8224 AKD7600 marking code C1H
Contextual Info: [AK7600] AK7600 2/6-Channel Audio CODEC with Digital EQ GENERAL DESCRIPTION AK7600 is a CODEC 2ch ADC, 6ch DAC with a delay line memory and digital filters such as EQ. This device operates in master mode and the internal sampling rate is 44.1kHz. It supports 5.0V single input

UPC3227TB

Abstract: marking C1G
Contextual Info: BIPOLAR ANALOG INTEGRATED CIRCUIT UPC3227TB 5 V, SILICON GERMANIUM MMIC WIDEBAND AMPLIFIER DESCRIPTION The µPC3227TB is a silicon germanium SiGe monolithic integrated circuit designed as IF amplifier for DBS tuners. This IC is manufactured using our 50 GHz fmax UHS2 (Ultra High Speed Process) SiGe bipolar process.

fm25v05-g

Abstract: FM25V05 fm25v05g
Contextual Info: FM25V05 512Kb Serial 3V F-RAM Memory Features 512K bit Ferroelectric Nonvolatile RAM • Organized as 65,536 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  10 Year Data Retention  NoDelay Writes  Advanced High-Reliability Ferroelectric Process

RG5V02

Abstract: fm25v02
Contextual Info: Pre-Production FM25V02 256Kb Serial 3V F-RAM Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  10 Year Data Retention  NoDelay Writes  Advanced High-Reliability Ferroelectric Process