BA12 Search Results

1N4148.1N4448

Abstract: BYV37-BYV38 byg20
Contextual Info: Temic Semiconductors Selector Guide - Alphanumeric Index 1N4148.1N4448 1N4150 1N4151 1N4154 1N4728A.1N4761A 1N5221B.1N5267B 1N5417.1N5418 BA1282.BA1283 BA282.BA283 BA479G.BA479S BA604 BA679.BA679S BA682.BA683 BA779.BA779S BA779 - 2 BA979.BA979S BA982.BA983

125-BR

Contextual Info: T-1 LEDs Data Display Products Model No. Fig. Color 1 1 1 1 1 1 1 1 1 2 3 1 1 1 1 1 1 4 4 5 5 6 125-BR 125-BA 125-BG 125-BCR 125-BCA 125-BCG 125-RLP 125-ALP 125-GLP 125-DRG 125-RG 125-BR5V 125-BA5V 125-BG5V 125-BR12V 125-BA12V 125-BG12V 125-NWR 125-NWA

Contextual Info: BA1282, BA1283 Vishay Semiconductors Band Switching Diodes FEATURES • • • • • 9612315 • • • • • MECHANICAL DATA Case: MicroMELF Weight: approx. 12 mg Cathode band color: black Packaging codes/options: TR3/10K per 13" reel 8 mm tape , 10K/box

Contextual Info: Standard ICs High voltage, high current Darlington transistor array B A 1 2 0 0 1 B / B A 12002 / B A 1 2 0 0 3 B / B A 1 2 0 0 3 BF / B A 1 2 0 0 4 B The BA12001B, BA12002, BA12003B, BA12003BF, and BA12004B are high current transistor arrays featuring high

BA1282

Abstract: BA1283 BA682 BA683 BA982 BA983
Contextual Info: BA1282.BA1283 Vishay Semiconductors Band Switching Diodes Features D D D D D Silicon Planar Diode Saving space Hermetic sealed parts Fits onto SOD 323 footprints Electrical data identical with the devices BA682.BA683 / BA982.BA983 D Low differential forward resistance

BA1282

Abstract: BA1282-TR BA1282-TR3 BA1283 BA682 BA683 BA982 BA983
Contextual Info: BA1282 / BA1283 Vishay Semiconductors Band Switching Diodes Features • • • • • • • • • • Silicon Planar Diode Saving space e2 Hermetic sealed parts Fits onto SOD323 footprints Electrical data identical with the devices BA682.BA683 / BA982.BA983

VLN 2003

Abstract: BA12002 12003B transistor BF 257 transistor BF 258 BA12001B BA12003B BA12003BF BA12004B high current darlington transistor
Contextual Info: Standard ICs High voltage, high current Darlington transistor array BA12001B/BA12002/BA12003B/BA12003BF/ BA12004B The BA12001B, BA12002, BA12003B, BA12003BF, and BA12004B are high current transistor arrays featuring high voltage withstand resistance and consisting o f seven circuits o f Darlington transistors.

BA1282

Abstract: BA1283 BA682 BA683 BA982 BA983
Contextual Info: BA1282.BA1283 Silicon Planar Diodes Features D D D D Saving space Hermetic sealed parts Fits onto SOD 323 footprints Electrical data identical with BA682.BA683 / BA982.BA983 the devices D Low differential forward resistance D Low diode capacitance D High reverse impedance

Seven Transistor Array PNP

Abstract: 30-C200 BA12001 BA12001B BA12003B BA12003BF BA12004B
Contextual Info: BA12001B / BA12003B / BA12003BF / BA12004B Standard ICs High voltage, high current Darlington transistor array BA12001B / BA12003B / BA12003BF / BA12004B The BA12001B, BA12003B, BA12003BF, and BA12004B are high voltage, high current, high sustain voltage transistor

BA12003

Contextual Info: BA12001 /BA12002/BA12003/BA12004 BA12001/BA12002 BA12003/BA12004 High-Voltage, High-Current Darlington Transistor Arrays BA12001, BA12002, BA12003, BA12004 ¡ i, $- >J > h- U S S r tjR Ltcrn,mi±^myk<n h 7 > y * £ 7 7U 'r ? 'f o U u-zn'JUtcifommftAffi zmSl z& Wt c

Contextual Info: BA12003 Transistors Darlington Transistor Array Number of Devices7 Type NPN/PNP NPN V(BR)CEO (V)50 V(BR)CBO (V) I(C) Max. (A)500m P(D) Max. (W) Minimum Operating Temp (øC) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.

Contextual Info: BA1282.BA1283 Vishay Telefunken Silicon Planar Diodes Features • Saving space • Hermetic sealed parts • Fits onto SOD 323 footprints • Electrical data identical with BA682.BA683 / BA982.BA983 • Low differential forward resistance • Low diode capacitance

transistor BF 258

Contextual Info: Standard ICs High voltage, high current Darlington transistor array B A 1 2 0 0 1 B /B A 1 2 0 0 2 /B A 1 2 0 0 3 B /B A 1 2 0 0 3 B F / B A 1 2 0 0 4 B The BA12001B, BA12002, BA12003B, BA12003BF, and BA12004B are high current transistor arrays featuring high

XR2204

Abstract: XR220 XR-2203 xr2203
Contextual Info: 7-Channel Drivers BA12003 BA12004 Dimensions Unit: mm 19.4±0.3 16 15 n 14 13 12 11 I— i l — i l — i l — i l — I 10 9 i~ i O u u u u u 1 2 3 4 5 u 6 u Ü 7 8 • Hi Iff k 2 .5 4 ± 0 .3 The BA12003 and BA12004 are highvoltage, high-current transistor arrays

Contextual Info: BA1282.BA1283 Vishay Telefunken Band Switching Diodes Features D D D D D Silicon Planar Diode Saving space Hermetic sealed parts Fits onto SOD 323 footprints Electrical data identical with the devices BA682.BA683 / BA982.BA983 D Low differential forward resistance

BA1282

Abstract: BA1283 BA682 BA683 BA982 BA983
Contextual Info: BA1282.BA1283 Vishay Telefunken Band Switching Diodes Features D D D D D Silicon Planar Diode Saving space Hermetic sealed parts Fits onto SOD 323 footprints Electrical data identical with the devices BA682.BA683 / BA982.BA983 D Low differential forward resistance

BA1283

Abstract: BA682 BA683 BA982 BA983 BA1282
Contextual Info: BA1282.BA1283 Vishay Telefunken Silicon Planar Diodes Features D D D D Saving space Hermetic sealed parts Fits onto SOD 323 footprints Electrical data identical with the devices BA682.BA683 / BA982.BA983 D Low differential forward resistance D Low diode capacitance

Contextual Info: T-1 LEDs Data Display Products Model No. Fig. Color 1 1 1 1 1 1 1 1 1 2 3 1 1 1 1 1 1 4 4 5 5 6 125-BR 125-BA 125-BG 125-BCR 125-BCA 125-BCG 125-RLP 125-ALP 125-GLP 125-DRG 125-RG 125-BR5V 125-BA5V 125-BG5V 125-BR12V 125-BA12V 125-BG12V 125-NWR 125-NWA

Contextual Info: BA12002 Transistors Independent Transistor Array Military/High-RelN Number of Devices7 Type NPN/PNP V(BR)CEO (V) V(BR)CBO (V) I(C) Max. (A)500m P(D) Max. (W) Minimum Operating Temp (øC) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition)

Wtv 080

Abstract: BAY 73 diode BA129 BAY73 Diode BAY 73
Contextual Info: FAIRCHILD SEMICONDUCTOR «34 D Ëj34bT k74 DOEITS^? BAY73/BÀ129 FAIR CHILD High Voltage .Low Leakage Diodes A Sch lu m b e rg e r C o m p a n y PACKAGES BAY73 BA129 • B V . . 125 V MIN @ 100 pA (BAY73) • B V . . 2 0 0 V (MIN) @ 100 pA (BA129) DO-35

Contextual Info: vtS H A Y ▼ _ BA1282.BA1283 Vishay Telefunken Silicon Planar Diodes Features • Saving space • H erm etic sealed parts • Fits onto SOD 323 footprints • Electrical data identical w ith B A 682.BA683 / BA 982.BA983 • Low differential forw ard resistance

schlumberger

Abstract: BA128 BA130 A130
Contextual Info: FAIRCHILD SEMICONDUCTOR ” ~ fi4 D E | 34fc.Tb74 0057564 b j ~ T fa ir c h ilB BA128/BA130 *. Mi l A Schlumberger Company General Purpose Diodes PACKAGES BA128 BA130 • W IV. .50 V BA128 , 25 V ( BA130) • ln .100nA (M AX )@ WIV _ 47 DO-35

PNP DARLINGTON SINK DRIVER 7CH

Abstract: BA12003BF Seven Transistor Array PNP BA12001 BA12001B BA12002 BA12003B BA12004B
Contextual Info: Standard ICs High voltage, high current Darlington transistor array BA12001B / BA12002 / BA12003B / BA12003BF / BA12004B The BA12001B, BA12002, BA12003B, BA12003BF, and BA12004B are high current transistor arrays featuring high voltage withstand resistance and consisting of seven circuits of Darlington transistors.

BA1282-GS08

Abstract: semiconductor band color code
Contextual Info: BA1282/BA1283 VISHAY Vishay Semiconductors Band Switching Diodes Features • • • • Silicon Planar Diode Saving space Hermetic sealed parts Fits onto SOD 323 footprints 9612315 • Electrical data identical with the devices BA682.BA683 / BA982.BA983