C35AR Search Results

SCR C106Y1

Abstract: ge c106b1 1N177 2N1777A 2N2344 2N1932 G C106B1 2N1931 Z4XL18 2N2346
Contextual Info: 232 232 232 O 232 o P H A S E C O N T R O L SCR’ s LOW C U R R E N T .5 TO 4.0 A M P ER ES GE TYPE JE D EC C3 C103 C8 C6 C7 05 — C106 C107 2N877-81 — 2N1929-35 — 2N2344-48 2N2322-29 * 2NI1595-99 — — 30-200 30-200 25-300 25-200 2G-200 25-400 «M O »

Contextual Info: C35A – C35K WTE POWER SEMICONDUCTORS Pb 35A AUTOMOTIVE CELL DIODE Features ! Diffused Junction ! ! ! ! Low Leakage Low Cost High Surge Current Capability Die Size 184 mil HEX D Anode + C E

SCR GE C20F

Abstract: scr c20d GE C20B GE C1220 scr GE scr C20f GE C33B C20D C32H GE SCR c20b scr C20F
Contextual Info: PH ASE C O N T R O L SCR’ s M EDIUM C U R R E N T 7.5 TO 25 A M P E R E S CIO G E T YPE CM 2N1770A-77A* 2N1770-78 JED EC C3Q-32 C37 Cl 22 — — — 2N1842-50 — — — C20-22 C36 C31 -33 C15 E L E C T R IC A L S P E C IF IC A T IO N S V O LTA G E RANGE

C35B

Abstract: C35A diode c35 C35D C35G C35J C35K free diode
Contextual Info: C35A – C35K WTE POWER SEMICONDUCTORS Pb 35A AUTOMOTIVE CELL DIODE Features Diffused Junction Low Leakage Low Cost High Surge Current Capability Die Size 184 mil HEX D Anode + C E Mechanical Data B Case: Cell Diode Passivated with Silicon Rubber Terminal: Copper Disc with Ag Plated

S C38M

Abstract: C38M SCR C38M Z4XL22 scr c38m Z4XL16 C35M C137p SCR JANTX 2N2326 Z4XL12
Contextual Info: PHASE CONTROL SCR’s MEDIUM CURRENT 25 TO 35 AM PERES GE TYPE IEDEC — C35 C38 C137 — 2N681 -92 — — — 2N5M4-07 25-800 25-800 25-800 500-1200 600-1200 ELECTRICAL SPECIFICATIONS VOLTAGE RANGE FORWARD CONDUCTION It RMS Max. RMS on-state c u rre n t (A)

Contextual Info: C35A – C35K WTE POWER SEMICONDUCTORS Pb 35A AUTOMOTIVE CELL DIODE Features Diffused Junction Low Leakage Low Cost High Surge Current Capability Die Size 184 mil HEX D Anode + C E Mechanical Data B Case: Cell Diode Passivated with Silicon Rubber Terminal: Copper Disc with Ag Plated

Contextual Info: C35A – C35K WTE POWER SEMICONDUCTORS Pb 35A AUTOMOTIVE CELL DIODE Features Diffused Junction Low Leakage Low Cost High Surge Current Capability Die Size 184 mil HEX D Anode + C E Mechanical Data B Case: Cell Diode Passivated with Silicon Rubber Terminal: Copper Disc with Ag Plated

Contextual Info: C35A – C35K 35A AUTOMOTIVE CELL DIODE WON-TOP ELECTRONICS Pb Features  Diffused Junction     Low Leakage Low Cost High Surge Current Capability Die Size 184 mil HEX D Anode + C E Mechanical Data      B Case: Cell Diode Passivated with Silicon Rubber

Z4XL6.2B

Abstract: Z4XL18 Z4XL20 1N1766 2N1777A 1N1767 1N1771 Z4XL12 Z4XL22 Z4XL6.2
Contextual Info: HIGH R E L I A B I L I T Y S P E C IF IC A T I O N S Continued M axim um F a ilJre Rate in Conservative!* rstm iatCEl Co nse rvative D esign M axim um C o nd itio ns High Ret. Type Com m ercial Type lo T s t g , T jo p V'iRM, V hkm V rsm C5AR1200 2N2324